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At least 163 records · Page 9

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NASA NTRS1984

Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts

Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

Wang, Y. X.↗

NASA NTRS1984

Sputtering as a Technique for Applying Tribological Coatings

Friction and wear induced mechanical failures may be controlled to extend the life of tribological components through the interposition of selected solid materials between contacting surfaces. Thin solid films of soft and hard materials are appropriate to lower friction and enhance the wear resistance of precision tribo-elements. Thin film coating technologies that have been developed may be used to interpose thin solid layers between contacting surfaces to reduce friction or to extend wear life. Film deposition technologies developed include chemical vapor deposition (CVD) and physical vapor deposition (PVD). Sputter coating is a PVD process for thin film deposition. It allows close control of coating thickness and composition and is well-suited for the deposition of tribological coatings. In this paper, the utility of magnetron sputtering for the deposition of tribological coatings is examined. Experimental results obtained when coated bodies are tested under a number of tribological operating conditions are presented. It is shown that when film adhesion problems are resolved, sputtering can be an effective means of depositing tribological coatings.

S Ramalingam↗

NASA NTRS1983

Sputtering of the gallium-indium eutectic alloy in the liquid phase

Watson and Haff (1980) have discussed a theory which is designed to explain quantitatively isotopic fractionation effects observed during sputtering of simple or complex targets. This theory is based on the assumption that most of the atoms sputtered from a surface originate in the top monolayer. The present investigation is mainly concerned with a direct experimental test of that assumption. The sputtering of both solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy is studied. Results obtained with the aid of ion scattering and Auger spectroscopy show that, in agreement with rough theoretical expectations, the surface monolayer of a gallium-indium alloy with 16.5 percent indium in bulk contains more than 94 percent indium, while the next layer can be only slightly enriched.

Dumke, M. F.↗

NASA NTRS1984

Sputtering processes - Erosion and chemical change

Laboratory data and models of sputter-induced erosion and chemical alterations in ice films are reviewed and the results are applied to icy grains and satellites exposed to magnetospheric ion bombardment. It is shown that the source of the plasma in the inner magnetosphere of Saturn is likely to be the sputter erosion of the icy objects in this region and the sputter erosion and possible stabilization of the E-ring are considered. Ion-induced polymerization is discussed as a source of the darkened rings of Uranus.

Johnson, R. E.↗

NASA NTRS1986

Sputtered cadmium oxide as a surface pretreatment for graphite solid lubricant films

Sputtered films of cadmium oxide were applied to sand blasted AISI 440C HT stainless steel disks as a surface pretreatment for the application of rubbed graphite films. Mixtures of cadmium oxide and graphite were applied to the nonpretreated sandblasted metal and evaluated. The results were compared to graphite films applied to other commercially available surface pretreatments. It is found that sputtered CdO pretreated surfaces increase the endurance lives of the graphite films and decrease the counterface steady state wear rate of the pins almost an order of magnitude compared to commercially available pretreatments. The CdO additions in general improved the tribological properties of graphite. The greatest benefit occurred when it was applied to the substrate rather than mixing it with the graphite and that sputtered films of CdO perform much better than rubbed CdO films.

Fusaro, R. L.↗

NASA NTRS1984

Substrate heating rates for planar and cylindrical-post magnetron sputtering sources

Results are presented for the substrate heating energy/atom required in the planar magnetron sputtering of Al, Cr, Ni, Cu, Mo, In, Ta, W, and Pt in Ar, as well as Al and Cr in O2. Data are also obtained for cylindrical magnetron sputtering of Nb, Ag, Ta, W, and Pb-Sn in Ar, and Mo sputtered in Ne, Ar, Kr, and Xe. Planar and cylindrical magnetron heating rates were comparable. Special experiments were conducted to examine the contributions to substrate heating of plasma species and ion neutralization and reflection at the cathode; the results obtained indicate that charged plasma species do not significantly contribute to the heating, but that neutralized and reflected ions play a significant role in the planar as well as cylindrical cases despite the differences in cathode geometry.

Thornton, J. A.↗

NASA NTRS1986

Highly conducting ZnSe films by reactive magnetron sputtering

This paper presents the results of an effort to deposit high-conductivity ZnSe on glass and conducting SnO2-coated glass substrates by reactive magnetron sputter deposition, using pure metal sputter targets of Zn and dopants such as In, Ga, and Al. Clear yellow ZnSe films were successfully obtained. By using substrate temperatures as low as 150 C, cosputtered dopants, and sputter parameters and H2Se injection rates which maximize the Zn-to-Se ratio in the films, ZnSe bulk resistivities have been lowered by up to seven orders of magnitude, reaching values as low as 20 ohm cm. The most effective dopant to data has been In, cosputtered with Zn in amounts leading to In atomic concentrations as high as 1.4 percent. Atomic-absorption measurements show an average 49.9/48.9 ratio of Zn to Se.

Nouhi, A.↗

NASA NTRS1987

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Coutts, T. J.↗

NASA NTRS1987

Magnetospheric plasma sputtering of Io's atmosphere

Neutral coronae due to magnetospheric ion sputtering from the exobase are generated, and ion and neutral injection into the plasma torus are calculated, on the assumption of the existence of an atmosphere on Io and a consideration of that atmosphere's various possible characteristics. Through the inclusion of the sputtered atmospheric corona that emerges from an assumed unattenuated incident ion flux, it becomes possible to satisfy the supply rate to the torus with an exobase that is close to the surface; such an exobase would imply that the Io atmosphere is insufficiently robust to support a fully dissociated corona, and that a significant fraction of the incident plasma ions can penetrate to the surface to furnish a sputter source of atmospheric gas.

Mcgrath, M. A.↗

NASA NTRS1987

Sputtered cadmium oxide as a surface pretreatment for graphite solid-lubricant films

Fusaro, Robert L.↗

NASA NTRS1989

Application of laboratory data to the sputtering of a planetary regolith

The effective yield from a planetary regolith composed of approximately spherical grains is characterized in light of expressions for laboratory sputtering data. In the case of a fully-exposed regolith, the effective yield is of the order of 0.4-1 times the measured yield at normal incidence; the range of variation for this value depends on the nature of the sputtering process employed. These results are applicable to such problems as the magnetospheric plasma sputtering of the outer solar system's icy satellites.

Johnson, R. E.↗

NASA NTRS1988

Hybrid solar cells based on dc magnetron sputtered films of n-ITO on APMOVPE grown p-InP

Hybrid indium-tin-oxide (ITO)/InP solar cells are discussed. The cells are constructed by dc magnetron sputter deposition of ITO onto high-quality InP films grown by atmospheric pressure metal-organic vapor-phase epitaxy (APMOVPE). A record efficiency of 18.9 percent, measured under standard Solar Energy Research Institute reporting conditions, has been obtained. The p-InP surface is shown to be type converted, principally by the ITO, but with the extent of conversion being modified by the nature of the sputtering gas. The deposition process, in itself, is not responsible for the type conversion. Dark currents have been suppressed by more than three orders of magnitude by the addition of hydrogen to the sputtering gas during deposition of a thin (5 nm) interface layer. Without this layer, and using only the more usual argon/oxygen mixture, the devices had poorer efficiencies and were unstable. A discussion of associated quantum efficiencies and capacitance/voltage measurements is also presented from which it is concluded that further improvements in efficiency will result from better control over the type-conversion process.

Coutts, T. J.↗

NASA NTRS1990

Investigation of buried homojunctions in p-InP formed during sputter deposition of both indium tin oxide and indium oxide

While dc magnetron sputter deposition of indium tin oxide leads to the formation of a buried homojunction in single crystal p-type InP, the mechanism of type conversion of the InP surface is not apparent. In view of the recent achievement of nearly 17-percent global efficiencies for cells fabricated solely by sputter deposition of In2O3, it is presently surmised that tin may not be an essential element in type conversion. A variety of electrical and optical techniques are presently used to evaluate the changes at both indium tin oxide/InP and indium oxide/InP interfaces. Such mechanisms as the passivation of acceptors by hydrogen, and sputter damage, are found to occur simultaneously.

Gessert, T. A.↗

NASA NTRS1990

Ion beam sputtering of in situ superconducting Y-Ba-Cu-O films

Oriented superconducting YBa2Cu3O7 thin films were deposited on yttria stabilized zirconia and SrTiO3 substrates by ion-beam sputtering of a nonstoichiometric oxide target. The films exhibited zero-resistance critical temperatures as high as 83.5 K without post-deposition anneals. Both the deposition rate and the c-lattice parameter data displayed two distinct regimes of dependence on the beam power of the ion source. Low-power sputtering yielded films with large c-dimensions and low Tc. Higher-power sputtering produced a continuous decrease in the c-lattice parameter and increase in critical temperature. Films having the smaller c-lattice parameters were Cu rich. The Cu content of films deposited at beam voltages of 800 V and above increased with increasing beam power.

Klein, J. D.↗

NASA NTRS1991

Ion beam sputtering in electric propulsion facilities

Experiments were undertaken to determine sputter yields of potential ion beam target materials, to assess the impact of charge exchange on beam diagnostics in large facilities, and to examine material erosion and deposition after a 957 hr test of a 5 kW-class ion thruster. The xenon ion sputter yield of flexible graphite was lower than other graphite forms especially at high angles of incidence. Ion beam charge exchange effects were found to hamper beam probe current collection diagnostics even at pressures from 0.7 to 1.7 mPa. Estimates of the xenon ion beam envelope were made and predictions of the thickness of sputter deposited coatings in the facility were compared with measurements.

Sovey, James S.↗

NASA NTRS1991

Lubrication with sputtered MoS2 films: Principles, operation, limitations

The present practices, limitations, and understanding of thin sputtered MoS2 films are reviewed. Sputtered MoS2 films can exhibit remarkable tribological properties such as ultralow friction coefficients (0.01) and enhanced wear lives (millions of cycles) when used in vacuum or dry air. To achieve these favorable tribological characteristics, the sputtering conditions during deposition must be optimized for adequate film adherence and appropriate structure (morphology) and composition.

Spalvins, T.↗

NASA NTRS1990

Buried homojunction solar cells formed in p-InP during sputter deposition and hydrogen plasma processing

Although it is apparent that direct current (DC) magnetron sputter deposition of indium tin oxide (ITO) leads to the formation of a buried homojunction in single-crystal p-type InP, the actual mechanism of type conversion of the InP surface is not clear. Since sputter deposition of In2O3 has also led to high-quality cells, it appears that Sn is not the cause of type conversion. To investigate the junction formation process further, experiments involving the use of a pure hydrogen plasma have been performed, resulting in type conversion of Fe-doped InP surfaces and in solar cells with efficiencies over 16 percent (global). The results confirm that sputter deposition is not necessary to form this type of buried homojunction solar cell, and they suggest a fabrication process that may be used with other relevant photovoltaic materials.

Gessert, T. A.↗

NASA NTRS1991

A reevaluation of the solar-wind sputtering rate on the lunar surface

Knowledge of the retention efficiency for solar-wind-implanted Ar-36 in lunar surface material and measurement of the Ar-36 concentration in a sputtered surface make it possible to calculate an upper limit to the effective sputtering rate at which that surface has been eroded. On the basis of data for 71501 plagioclase and the glass of rock 12054, a value is derived for the sputter-erosion rate equal to less than 0.0024 + or - 0.001 A/yr, in good agreement with the limit of less than 0.0035 A/yr previously calculated by Zinner et al. (1977).

Kerridge, J. F.↗