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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Energy storage in magnetic textures driven by vorticity flow

Here, an experimentally feasible energy-storage concept is formulated based on vorticity (hydro)dynamics within an easy-plane insulating magnet. The free energy associated with the magnetic winding texture is built up in a circular easy-plane magnetic structure by injecting a vorticity flow in the radial direction. The latter is accomplished by electrically induced spin-transfer torque, which pumps energy into the magnetic system in proportion to the vortex flux. The resultant magnetic metastable state with a finite winding number can be maintained indefinitely because the process of its relaxation via phase slips is exponentially suppressed when the temperature is brought well below the Curie temperature. We characterize the vorticity-current interaction underlying the energy-loading mechanism through its contribution to the effective electric inductance in the rf response. Our proposal may open an avenue for naturally powering spintronic circuits and nontraditional magnet-based neuromorphic networks.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Probing intrinsic magnetization dynamics of the Y 3⁢ Fe 5 ⁢O 12 /Bi 2 ⁢Te 3 interface at low temperature

Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in the field of spintronics, offering the potential for manipulating magnetization through topological surface state–enabled spin-orbit torque. However, many TI–MI interfaces are plagued by issues such as contamination within the magnetic insulator layer and the presence of a low-density transitional region of the topological insulator. These interfacial challenges often obscure the intrinsic behavior of the TI–MI system. In this study, we addressed these challenges by depositing sputtered Bi 2 ⁢Te 3 on liquid phase epitaxy grown Y 3 ⁢Fe 5 ⁢O 12 /Gd 3 ⁢Ga 5 ⁢O 12 . The liquid phase epitaxy grown Y 3 ⁢Fe 5 ⁢O 12 has been previously shown to have exceptional interface quality, without an extended transient layer derived from interdiffusion processes of the substrate or impurity ions, thereby eliminating rare-earth impurity-related losses in the MI at low temperatures. At the TI–MI interface, high-resolution depth-sensitive polarized neutron reflectometry confirmed the absence of a low-density transitional growth region of the TI. By overcoming these undesirable interfacial effects, we isolate and probe the intrinsic low-temperature magnetization dynamics and transport properties of the TI–MI interface. In conclusion, our findings revealed strong spin pumping at low temperatures, accompanied by an additional in-plane anisotropy. The enhanced spin pumping at low temperatures is correlated with the observed suppression of bulk conduction and the weak antilocalization in the TI film, highlighting the interplay between the transport and spin pumping behavior in the TI–MI system.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Easy-plane spin Hall nano-oscillators as spiking neurons for neuromorphic computing

Here we show analytically using a macrospin approximation that easy-plane spin Hall nano-oscillators excited by a spin current polarized perpendicularly to the easy plane have phase dynamics analogous to that of Josephson junctions. Similarly to Josephson junctions, they can reproduce the spiking behavior of biological neurons that is appropriate for neuromorphic computing. To take advantage of typical spin-orbit torques, we use a nanoconstriction geometry, in which the magnetostatic interaction and magnetocrystalline anisotropy are tuned to create an easy plane that includes the interface normal direction. We perform micromagnetic simulations of such oscillators realized in this geometry and show that the easy-plane spiking dynamics is preserved in this experimentally feasible architecture. Finally we simulate two elementary neural network blocks that implement operations essential for neuromorphic computing. First, we show that output spikes energies from two neurons can be summed and injected into a following layer neuron and second, we demonstrate that outputs can be multiplied by synaptic weights implemented by locally modifying the anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Probing exchange bias at the surface of a doped ferrimagnetic insulator

With the realization of stress-induced perpendicular magnetic anisotropy, efficient spin-orbit torque switching, and room temperature topological Hall effect, interest in rare earth iron garnets has been revived in recent years for their potential in spintronic applications. In this study, we investigate the magnetic properties of micrometer-thick Bi and Ga substituted thulium iron garnets (BiGa:TmIG) grown by the liquid-phase epitaxy method. Above the magnetization compensation (MC) temperature, anomalous triple hysteresis is observed in BiGa:TmIG/Pt heterostructures by anomalous Hall effect measurements. X-ray magnetic circular dichroism and energy dispersive spectroscopy measurements reveal its origin as an internal exchange bias (EB) effect arising from inhomogeneities localized at the surface of the film. Possibly depending on the difference in thickness and defect realization of the EB layer, two types of magnetization reversal mechanisms, namely, the Stoner-Wohlfarth type and the reversible domain-wall motion type, are observed. Furthermore, our results show that rich meta-magnetic phases exist in garnets close toMC, which can be robustly tuned by chemical composition engineering and conveniently probed by electrical transport measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ultralow Voltage Manipulation of Ferromagnetism

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 µJ cm -2 switching operation. In this paper, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO 3 to scale the switching energy density to ≈10 µJ cm -2 . This work provides a template to achieve attojoule-class nonvolatile memories.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Shape‐Dependent Multi‐Weight Magnetic Artificial Synapses for Neuromorphic Computing

Abstract In neuromorphic computing, artificial synapses provide a multi‐weight (MW) conductance state that is set based on inputs from neurons, analogous to the brain. Herein, artificial synapses based on magnetic materials that use a magnetic tunnel junction (MTJ) and a magnetic domain wall (DW) are explored. By fabricating lithographic notches in a DW track underneath a single MTJ, 3–5 stable resistance states that can be repeatably controlled electrically using spin‐orbit torque are achieved. The effect of geometry on the synapse behavior is explored, showing that a trapezoidal device has asymmetric weight updates with high controllability, while a rectangular device has higher stochasticity, but with stable resistance levels. The device data is input into neuromorphic computing simulators to show the usefulness of application‐specific synaptic functions. Implementing an artificial neural network (NN) applied to streamed Fashion‐MNIST data, the trapezoidal magnetic synapse can be used as a metaplastic function for efficient online learning. Implementing a convolutional NN for CIFAR‐100 image recognition, the rectangular magnetic synapse achieves near‐ideal inference accuracy, due to the stability of its resistance levels. This work shows MW magnetic synapses are a feasible technology for neuromorphic computing and provides design guidelines for emerging artificial synapse technologies.

Leonard, Thomas↗
DOE OSTI2023

Nanoprobe Based Information Processing: Nanoprobe‐Electronics

Abstract With computational architectures becoming data‐centric and with the rise of in‐memory computing, the role of memory will be ever more crucial. In turn, storing massive amount of data demands for ultra‐low power and non‐volatile types necessitating new memory technologies. Here, a controllable nanoelectromechanical (NEM) spin memory is proposed for compact nonvolatile memory arrays. It combines the advantages of both nanomechanical and spin‐transfer torque (STT) magnetic memory devices to overcome fundamental scalability roadblocks of non‐hybrid alternatives. The hybrid system paves the way to a new memory technology in the regime of sub‐10‐nm lateral size with a sub‐1‐MA cm −2 switching energy.

Yi, Bao↗
DOE OSTI2020

Permanently Magnetized Insulating Thin-Film Devices by Reduction

A reduction-based manufacturing process for creating technologically important multilayer structures from lattice-matched ferromagnetic insulators and ferromagnetic conductors is reported. The process is demonstrated by growing a permanently magnetized double-layer structure, consisting of lattice-matched conducting (Ni,Co) and insulating (Ni 0.4 Co 0.6 ) 3 O 3 layers, through a single deposition cycle. The orientation of the metal cation network is preserved after reduction. Close-packing displacements of Ni and Co take place in such a manner that the in-plane hexagonal arrangement is preserved. This is critical for ensuring high-quality interfaces joining the layers. At room temperature the hysteresis loop is centered. At low temperature the oxide layer becomes ferrimagnetically ordered, accompanied by a shift of the hysteresis loop along the magnetic field axis. The shift is assigned to exchange bias phenomenon. Biaxial compressive strain is responsible for the required ferrimagnetic ordering. Finally, spin valves and closely related magnetoresistance random access memory and spin-transfer-torque magnetic random access memory devices are addressed as potential applications.

42 ENGINEERING↗
DOE OSTI2023

Switching current reduction in magnetoresistive random access memories

We present an approach for minimizing the critical current for the magnetization switching in magnetic tunnel junctions by optimizing the spatial distribution of the current density. We show that such a minimization is possible because critical current is determined by the condition of making one of the magnetization eigenstates grow in time. The excitation of the eigenstates is enhanced when the spatial distributions of the eigenstates and current density overlap. Critical current can be viewed as a functional of the current density spatial distribution and it can be minimized by optimizing this distribution. Such an optimization results in a major reduction of the critical current and increase of the switching efficiency, viz. the ratio between the energy barrier and critical current. The minimized critical current increases approximately linearly with the magnetic tunnel junction size, which is much slower than critical current for the case of a uniform current density. The optimized efficiency can be approximately a constant with respect to the magnetic tunnel junction size, which is much higher than the efficiency for the uniform current density. Additional optimization can be achieved by spatially modulating the material parameters, e.g., the saturation magnetization. The presented approach and obtained scaling of the critical current and efficiency offers opportunities for the magnetic tunnel junction optimization.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Analysis of ultrafast magnetization switching dynamics in exchange-coupled ferromagnet–ferrimagnet heterostructures

Magnetization switching in ferromagnets has so far been limited to the current-induced spin–orbit–torque effects. Recent observation of helicity-independent all-optical magnetization switching (HI-AOS) in an exchange-coupled ferromagnet–ferrimagnet (FM-FEM) heterostructures expanded the range and applicability of such ultrafast heat-driven magnetization switching. Here we report the element-resolved HI-AOS dynamics of such an exchange-coupled system, using a modified microscopic three-temperature model. We have studied the effect of (i) the Curie temperature of the FM, (ii) FEM composition, (iii) the long-range Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange-coupling strength, and (iv) the absorbed optical energy on the element-specific time-resolved magnetization dynamics. The phase-space of magnetization illustrates how the RKKY coupling strength and the absorbed optical energy influence the switching time. Our analysis demonstrates that the threshold switching energy depends on the composition of the FEM and the switching time depends on the Curie temperature of the FM as well as RKKY coupling strength. Importantly, this simulation anticipates new insights into developing faster and more energy-efficient spintronics devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electrical Control of Magnetic Resonance in Phase Change Materials

Metal–insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic changes in the spin excitations are also expected. The transition metal oxide La 0.7 Sr 0.3 MnO 3 (LSMO) is a ferromagnetic metal at low temperatures and a paramagnetic insulator above room temperature. When LSMO is in its metallic phase, a critical electrical bias has been shown to lead to an MIT that results in the formation of a paramagnetic resistive barrier transverse to the applied electric field. Using spin-transfer ferromagnetic resonance spectroscopy, we show that even for electrical biases less than the critical value that triggers the MIT, there is magnetic phase separation, with the spin-excitation resonances varying systematically with applied bias. Therefore, voltage-triggered MITs in LSMO can alter magnetic resonance characteristics, offering an effective method for tuning synaptic weights in neuromorphic circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Observation of current-induced switching in non-collinear antiferromagnetic IrMn 3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn 3 /Pt devices. A six-terminal double-cross device is constructed, with an IrMn 3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn 3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn 3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Machine learning nonequilibrium electron forces for spin dynamics of itinerant magnets

Abstract We present a generalized potential theory for conservative as well as nonconservative forces for the Landau-Lifshitz magnetization dynamics. Importantly, this formulation makes possible an elegant generalization of the Behler-Parrinello machine learning (ML) approach, which is a cornerstone of ML-based quantum molecular dynamics methods, to the modeling of force fields in adiabatic spin dynamics of out-of-equilibrium itinerant magnetic systems. We demonstrate our approach by developing a deep-learning neural network that successfully learns the electron-mediated exchange fields in a driven s-d model computed from the nonequilibrium Green’s function method. We show that dynamical simulations with forces predicted from the neural network accurately reproduce the voltage-driven domain-wall propagation. Our work also lays the foundation for ML modeling of spin transfer torques and opens a avenue for ML-based multi-scale modeling of nonequilibrium dynamical phenomena in itinerant magnets and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Perspective: Magnon-magnon coupling in hybrid magnonics

The internal coupling of magnetic excitations (magnons) with themselves has created a new research sub-field in hybrid magnonics, i.e., magnon-magnon coupling, which focuses on materials discovery and engineering for probing and controlling magnons in a coherent manner. This is enabled by, one, the abundant mechanisms of introducing magnetic interactions, with examples of exchange coupling, dipolar coupling, Ruderman–Kittel–Kasuya–Yosida (RKKY) coupling, and Dzyaloshinskii–Moriya interaction (DMI) coupling, and two, the vast knowledge of how to control magnon band structure, including field and wavelength dependences of frequencies, for determining the degeneracy of magnon modes with different symmetries. In particular, we discuss how magnon-magnon coupling is implemented in various materials systems, with examples of magnetic bilayers, synthetic antiferromagnets, nanomagnetic arrays, layered van der Waals magnets, and (DMI spin-orbit torque materials) in magnetic multilayers. Here, we then introduce new concept of applications for these hybrid magnonic materials systems, with examples of frequency up/down conversion and magnon-exciton coupling, and discuss what properties are desired for achieving those applications.

Materials science↗
DOE OSTI2022

Antiferromagnetic Parametric Resonance Driven by Voltage-Controlled Magnetic Anisotropy

Voltage-controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently also considered in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Néel vector and for the detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pumping experiences the so-called “exchange enhancement” of the coupling efficiency and, thus, is 1–2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pumping mechanisms in AFMs with an out-of-plane easy axis. Therefore, we demonstrate that VCMA parametric pumping is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗
DOE OSTI2020

Giant momentum-dependent spin splitting in centrosymmetric low-$\textit{Z}$ antiferromagnets

The energy vs crystal momentum $\textit{E(k)}$ diagram for a solid (band structure) constitutes the road map for navigating its optical, magnetic, and transport properties. By selecting crystals with specific atom types, composition, and symmetries, one could design a target band structure and thus desired properties. A particularly attractive outcome would be to design energy bands that are split into spin components with a momentum-dependent splitting, as envisioned by Pekar and Rashba, enabling spintronic application. The current paper provides “design principles” for wave-vector dependent spin splitting (SS) of energy bands that parallel the traditional Dresselhaus and Rashba spin-orbit coupling (SOC)–induced splitting, but originates from a fundamentally different source—antiferromagnetism. Here, we identify a few generic antiferromagnetic (AFM) prototypes with distinct SS patterns using magnetic symmetry design principles. These tools allow also the identification of specific AFM compounds with SS belonging to different prototypes. A specific compound—centrosymmetric tetragonal MnF 2 —is used via density functional band-structure calculations to quantitatively illustrate one type of AFM SS. Unlike the traditional SOC-induced effects restricted to noncentrosymmetric crystals, we show that antiferromagnetic-induced spin splitting broadens the playing field to include even centrosymmetric compounds, and gives SS comparable in magnitude to the best known (“giant’” SOC effects, even without traditional SOC, and consequently does not rely on the often-unstable high atomic number elements required for high SOC. We envision that use of the current design principles to identify an optimal antiferromagnet with spin-split energy bands would be beneficial for efficient spin-charge conversion and spin-orbit torque applications without the burden of requiring compounds containing heavy elements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Direct imaging of electrical switching of antiferromagnetic Néel order in α-Fe 2 O 3 epitaxial films

In this work, we report the direct observation of switching of the Néel vector of antiferromagnetic (AFM) domains in response to electrical pulses in micron-scale Pt/α-Fe 2 O 3 Hall bars using photoemission electron microscopy. Current pulses lead to reversible and repeatable switching with the current direction determining the final state, consistent with Hall effect experiments that probe only the spatially averaged response. Current pulses also produce irreversible changes in domain structure, in and even outside the current path. In both cases only a fraction of the domains switch in response to pulses. Furthermore, the analysis of images taken with different x-ray polarizations shows that the AFM Néel order has an out-of-plane component in equilibrium that is important to consider in analyzing the switching data. These results show that—in addition to effects associated with spin-orbit torques from the Pt layer, which can produce reversible switching—changes in AFM order can be induced by purely thermal effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗