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At least 163 records · Page 9

The dynamics and optimal control of spinning spacecraft and movable telescoping appendages, part B: Effect of gravity-gradient torques on the dynamics of a spinning spacecraft with telescoping appendages

The effects of gravity gradient torques during boom deployment maneuvers of a spinning spacecraft are examined. Configurations where the booms extended only along the hub principal axes and where one or two booms are offset from the principal axes were considered. For the special case of symmetric deployment (principal axes booms) the stability boundaries are determined, and a stability chart is used to study the system behavior. Possible cases of instability during this type of maneuver are identified. In the second configuration an expression for gravity torque about the hub center of mass was developed. The nonlinear equations of motion are solved numerically, and the substantial influence of the gravity torque during asymmetric deployment maneuvers is indicated.

Bainum, P. M.↗

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Manipulation of antiferromagnetic (AFM) materials as active elements provides a crucial combination of electrical, thermal, and magnetic properties for spintronics. This study shows how the spin current generated in heavy metal is induced by spin‐orbit torque into an adjacent AFM insulator. The bulk unpinned spins of the AFM layer drive a spin current that is transmitted to the top ferromagnet. This mechanism allows the electrical control of the exchange bias, coercive field, and blocking temperature of the system. Further support is provided by a model calculation that quantitatively describes the effect of the spin current injection into the AFM.

antiferromagnetism↗

Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer

Fast spin manipulation in magnetic heterostructures, where magnetic interactions between different materials often define the functionality of devices, is a key issue in the development of ultrafast spintronics. Although recently developed optical approaches such as ultrafast spin-transfer and spin–orbit torques open new pathways to fast spin manipulation, these processes do not fully utilize the unique possibilities offered by interfacial magnetic coupling effects in ferromagnetic multilayer systems. Here, ultrafast optically controlled interfacial exchange interactions in the ferromagnetic Co 2 FeAl/(Ga,Mn)As system at low laser fluence levels are experimentally demonstrated. The excitation efficiency of Co 2 FeAl with the (Ga,Mn)As layer is 30–40 times higher than the case with the GaAs layer at 5 K due to the modification of exchange coupling interaction via photoexcited charge transfer between the two ferromagnetic layers. In addition, the coherent spin precessions persist to room temperature, excluding the drive of pump-modulated magnetization in the (Ga,Mn)As layer and indicating a proximity-effect-related optical excitation mechanism. The results highlight the importance of interfacial exchange interactions in ferromagnetic heterostructures and how these magnetic coupling effects can be utilized for ultrafast, low-power spin manipulation.

36 MATERIALS SCIENCE↗

Modeling the Spin Equilibrium of Neutron Stars in LMXBs Without Gravitational Radiation

In this paper we discuss the spin-equilibrium of accreting neutron stars in LMXBs. We demonstrate that, when combined with a naive spin-up torque, the observed data leads to inferred magnetic fields which are at variance with those of galactic millisecond radiopulsars. This indicates the need for either additional spin-down torques (eg. gravitational radiation) or an improved accretion model. We show that a simple consistent accretion model can be arrived at by accounting for radiation pressure in rapidly accreting systems (above a few percent of the Eddington accretion rate). In our model the inner disk region is thick and significantly sub-Keplerian, and the estimated equilibrium periods are such that the LMXB neutron stars have properties that accord well with the galactic millisecond radiopulsar sample. The implications for future gravitational-wave observations are also discussed briefly.

Andersson, N.↗

Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy

Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Topological insulator-based high efficiency switching of magnetic unit, method and applications

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

36 MATERIALS SCIENCE↗

Observation of the Fluctuation Spin Hall Effect in a Low-Resistivity Antiferromagnet

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce the power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium (Cr) is proven to be an effective mechanism for creating an additional part of the SHE, named the fluctuation spin Hall effect. Further, the SHA is significantly enhanced when the temperature approaches the Néel temperature (T N ) of Cr and has a peak value of -0.36 near T N . This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin–orbit torque materials. This study demonstrates the critical spin fluctuation as a prospective way to increase the SHA and enriches the AFM material candidates for spin–orbitronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic Damping Modulation in IrMn 3 / Ni 80 Fe 20 via the Magnetic Spin Hall Effect

Noncollinear antiferromagnets can have additional spin Hall effects due to the net chirality of their magnetic spin structure, which provides for more complex spin-transport phenomena compared to ordinary nonmagnetic materials. Here we investigated how ferromagnetic resonance of permalloy (Ni 80 Fe 20 ) is modulated by spin Hall effects in adjacent epitaxial IrMn 3 films. We observe a large dc modulation of the ferromagnetic resonance linewidth for currents applied along the [001] IrMn 3 direction. Furthermore, this very strong angular dependence of spin-orbit torques from dc currents through the bilayers can be explained by the magnetic spin Hall effect where IrMn 3 provides novel pathways for modulating magnetization dynamics electrically.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Crystal orientation dependence of interfacial magnetic anisotropy at heavy-metal/magnetic-garnet interfaces

Ferrimagnetic insulators capped with a heavy metal are becoming an increasingly interesting materials system in spintronics due to their unique ability for electrical manipulation and detection of magnetic states and spin textures via spin-orbit torques. The ability to engineer magnetic anisotropy is a powerful tool for tuning the recently discovered phenomena in these bilayers such as electrical switching or the stabilization of topological magnetic textures. Here, we observe large shifts in the magnetic anisotropy in Tm 3 Fe 5 O 13 and Y 3 Fe 5 O 12 thin films due to heavy-metal capping layers, which strongly depends on the orientation of the substrate and therefore the orientation of the epitaxial films. This work suggests large Rashba spin-orbit coupling at the metal/ferrimagneticinsulator interface, which can be engineered in spintronic devices that utilize spin-orbit torques for electrical control of the magnetization in magnetic insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First-order torques and solid-body spinning velocities in intense sound fields

The letter reports an observation of first-order nonzero time-averaged torques and solid-body spinning velocities in intense acoustic fields. The experimental apparatus consisted of a vertical cylindrical rod supported on an air bearing and passing through a box with two loudspeakers centered on adjoining vertical sides. The rim velocity of the cylinder and the torque on the cylinder are measured as functions of air-particle velocity and the phase difference between the x and y components of the particle velocity. It is found that both rim velocity and torque are linear functions of particle velocity. Difficulties in constructing a proper theoretical description of the observed effects are discussed.

Wang, T. G.↗

Magnetic Proximity Effects in Iron Germanium Telluride/Platinum Heterostructures

Van der Waals (vdW) magnetic materials have attracted considerable attention for use in spintronic devices such as those controlled by spin–orbit torque (SOT). Such SOT-driven devices are typically fabricated by bringing a vdW magnet in proximity to a spin–charge conversion layer to achieve current-driven magnetization switching. Here, we show that such structures fabricated with iron germanium telluride (FGT) and platinum can exhibit emergent magnetic properties, which we attribute to magnetic proximity effects at the FGT/Pt interface. These changes manifest as increased perpendicular magnetic anisotropy and the emergence of additional magnetization reversal steps as probed by magneto-transport, with the most significant changes appearing in thinner flakes. The behavior was found to be robust and consistently appeared in samples made with crystals from different vendors. In conclusion, our results demonstrate the potential for engineering vdW spintronic systems through magnetic proximity effects.

2D magnet↗

Not an Oxymoron: Some X-Ray Binary Pulsars with Enormous Spin-Up Rates Reveal Weak Magnetic Fields

Three high-mass X-ray binaries have been discovered recently exhibiting enormous spin-up rates. Conventional accretion theory predicts extremely high-surface dipolar magnetic fields that we believe are unphysical. Instead, we propose quite the opposite scenario; some of these pulsars exhibit weak magnetic fields, so much so that their magnetospheres are crushed by the weight of inflowing matter. The enormous spin-up rate is achieved before inflowing matter reaches the pulsar's surface as the penetrating inner disc transfers its excess angular momentum to the receding magnetosphere, which, in turn, applies a powerful spin-up torque to the pulsar. This mechanism also works in reverse; it spins a pulsar down when the magnetosphere expands beyond corotation and finds itself rotating faster than the accretion disc, which then exerts a powerful retarding torque to the magnetic field and to the pulsar itself. The above scenaria cannot be accommodated within the context of neutron-star accretion processes occurring near spin equilibrium, thus they constitute a step towards a new theory of extreme (far from equilibrium) accretion phenomena.

Christodoulou, D. M.↗

Planar Hall Driven Torque in a Ferromagnet/Nonmagnet/Ferromagnet System

An important goal of spintronics is to covert a charge current into a spin current with a controlled spin polarization that can exert torques on an adjacent magnetic layer. Here we demonstrate such torques in a two ferromagnet system. A CoNi multilayer is used as a spin current source in a sample with structure CoNi/Au/CoFeB. Spin torque ferromagnetic resonance is used to measure the torque on the CoFeB layer. The response as a function of the applied field angle and current is consistent with the symmetry expected for a torque produced by the planar Hall effect originating in CoNi. We find the strength of this effect to be comparable to that of the spin Hall effect in platinum, indicating that the planar Hall effect holds potential as a spin current source with a controllable polarization direction.

ferromagnetic resonance↗

Deterministic Current–Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field

Current–induced spin–orbit torques (SOTs) have emerged as a powerful tool to control magnetic elements and non–uniform magnetic textures such as domain walls and skyrmions. SOT–induced switching of perpendicular magnetization generally requires an external field to break the rotational symmetry of the spin–orbit effective fields responsible for the deterministic reversal. The proposed mechanisms to eliminate this requirement often rely on complex multilayer structures that necessitate laborious optimization in the material and spin transport properties, making them less attractive for applications. Herein, current–induced, external field–free switching of an epitaxial MgO/Pt/Co trilayer with an extremely large perpendicular anisotropy in excess of 3 Tesla is reported. It is found that switching occurs due to the interplay of strong SOTs, local anisotropy fluctuations, and the Dzyaloshinkii–Moriya interaction inherent to this epitaxial system. Finally, given that these layers constitute the base stack of a magnetic tunnel junction, this switching mechanism offers the most technologically viable path toward devices such as field–free SOT–based magnetic random–access memories.

36 MATERIALS SCIENCE↗

Effect of gravity-gradient torques on the dynamics of a spinning spacecraft with telescoping appendages

The effects of gravity-gradient torques during boom deployment maneuvers of a spinning spacecraft are examined with a combination of numerical and analytical methods. It is assumed that the spacecraft consists of a rigid central hub and movable rigid telescoping booms where the booms extend only along the hub principal axes. For the special case of symmetric deployment the stability boundaries are determined and a stability chart is used to study the system behavior. Possible cases of instability during this type of maneuver are identified.

Rajan, M.↗

Dynamics of metastable contact soliton dissipative exchange flows in one-dimensional ferromagnetic channels

Dissipative exchange flows (DEFs) are large-amplitude boundary value solutions of ferromagnetic channels. In their low-injection limit, DEFs reduce to spin superfluids. However, in the strong injection limit, nonlinearities dominate close to the injection site and a soliton is formed; this solution has been termed a contact soliton dissipative exchange flow (CS-DEF). Here, in this work, we numerically investigate CS-DEF solutions in a moderate injection regime and a finite injection width. We find a solution where two metastable solitons coexist in the injection region. This solution is metastable in the sense that any perturbation to the system will eject one of the solitons out of the injection region. Moreover, soliton dynamics can be excited when two injection regions are separated by a certain distance. We find that the ensuing DEF between the solitons induces a steady-state dynamics in which metastable solitons are continually ejected and nucleated. Furthermore, and depending on the relative signs of the spin injections, the soliton dynamics possess a particular handedness and frequency related to the spin transfer torque delivered by the DEF. Our results provide insights into the transport of spin current by DEFs - where the interaction between DEFs and solitons suggests a mechanism for detaching contact-solitons from the injection boundary. Although this study focuses on the "nonlocal" interaction between solitons, it may lead to the investigation of new mechanisms for inserting solitons in a DEF, e.g., for discrete motion and transport of information over long distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.

magnetic domain wall↗

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

36 MATERIALS SCIENCE↗