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Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.
Report describes complementary metal-oxide-semiconductor (CMOS) process used to fabricate integrated circuits at Marshall Space Flight Center. It also presents general discussions of circuit design, mask making packaging, and testing.
Vacuum sander prevents sanding dust from entering a work area, since dust particles are drawn off as quickly as they are produced. Tool is useful where dust presents health hazards, interferes with such processes as semiconductor manufacture, or could destroy wet paint or varnish finishes. Could be used to sand such materials as lead paint.
The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.
Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.
Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.
The energy-stability of thermocapillary convection in models of the float-zone, crystal-growing process was studied. Stability limits, as functions of pertinent parameters, that will identify conditions which will not allow the existence of an undesirable oscillatory flow instability were determined. Such instabilities may occur in the space processing of semiconductor materials. The determination of the stability limits will involve two sets of numerical computations: (1) solution of the nonlinear governing equations together with the appropriate boundary conditions to determine the basic state (in general, velocity, pressure and temperature fields and the displacement of free surfaces and interfaces); and (2) solution of a nonlinear Euler-Lagrange systems for the energy-stability limit. Both computations, while difficult, should be within the scope of available computer capability and available concepts in numerical analysis. Finite-element methods are attractive candidates for the numerical work.
The research program of Semiconductor Research Corp. is managed as three overlapping areas: Manufacturing Sciences, Design Sciences and Microstructure Sciences. A total of 40 universities are participating in the performance of over 200 research tasks. The goals and direction of Manufacturing Sciences research became more clearly focused through the efforts of the Manufacturing Sciences Committee of the SRC Technical Advisory Board (TAB). The mission of the SRC Manufacturing Research is the quantification, control, and understanding of semiconductor manufacturing process necessary to achieve a predictable and profitable product output in the competitive environment of the next decade. The 1994 integrated circuit factory must demonstrate a three level hierarchy of control: (1) operation control, (2) process control, and (3) process design. These levels of control are briefly discussed.
The relationship between the flow and solute fields during steady mass transfer of a dilute component is analyzed for multi-cellular rotating flows in the floating zone process of semiconductor growth. When the recirculating flows are weak in relation to the rate of crystal growth, a closed-form solution clearly shows the link between the convection pattern in the melt and the solute distribution across the surface of the growing solid. In the limit of strong convection, finite element calculations demonstrate the tendency of the composition to become uniform over the majority of the melt. The solute segregation in the product crystal is greatest when the recirculating motion is comparable to the rate of crystal growth, and points to the danger in attempting to grow compositionally uniform materials from a nearly convectionless melt.
Concentration of oxygen in this closed-loop system kept low by use of heated catalytic sorbent bed in cartridge. Proposed to keep concentration of water vapor low by use of predried zeolite sorbent bed in another cartridge, and to remove particles smaller than 0.1 micrometer by use of porous metal filters. In specific application, chamber is one in which semiconducting materials processed. By virtue of closed-loop operation, limited supply of inert gas adequate to provide atmosphere for industrial processing of semiconductors.
The Quench Module Insert (QMI) and the Diffusion Module Insert (DMI) are microgravity furnaces under development at Marshall Space Flight Center. The furnaces are being developed for the first Materials Science Research Rack (MSRR-1) of the Materials Science Research Facility (MSRF), one of the first International Space Station (ISS) scientific payloads. QMI is a Bridgman furnace with quench capability for studying interface behavior during directional solidification of metallic and alloy materials. DMI will be a Bridgman-Stockbarger furnace to study diffusion processes in semiconductors. The design for each insert, both QMI and DMI, is driven by specific science, operations and safety requirements, as well as by constraints arising from resource limitations, such as volume, mass and power. Preliminary QMI analysis and testing indicates that the design meets these requirements.
Annealing is a key step in most semiconductor fabrication processes, especially for thin films where annealing enhances performance by healing defects and increasing grain sizes. We have employed a new annealing oven for the annealing of CdTe-based solar cells and have been using this system in an attempt to grow US on top of CdTe by annealing in the presence of H2S gas. Preliminary results of this process on CdTe solar cells and other thin-film devices will be presented.
Using plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)
A software system that uses artificial intelligence techniques to help with complex Space Shuttle scheduling at Kennedy Space Center is commercially available. Stottler Henke Associates, Inc.(SHAI), is marketing its automatic scheduling system, the Automated Manifest Planner (AMP), to industries that must plan and project changes many different times before the tasks are executed. The system creates optimal schedules while reducing manpower costs. Using information entered into the system by expert planners, the system automatically makes scheduling decisions based upon resource limitations and other constraints. It provides a constraint authoring system for adding other constraints to the scheduling process as needed. AMP is adaptable to assist with a variety of complex scheduling problems in manufacturing, transportation, business, architecture, and construction. AMP can benefit vehicle assembly plants, batch processing plants, semiconductor manufacturing, printing and textiles, surface and underground mining operations, and maintenance shops. For most of SHAI's commercial sales, the company obtains a service contract to customize AMP to a specific domain and then issues the customer a user license.
Planar submillimeter wave circuits are slowly replacing whisker-contacted devices at frequencies above 100 GHz, but in many cases the size constraints dictated by the short wavelengths found at high frequencies have not been adequately addressed.
Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.
Superconducting detectors offer unparalleled means of making astronomical/cosmological observations. Fabrication of these detectors is somewhat unconventional; however, a lot of novel condensed matter physics/materials scientific discoveries and semiconductor fabrication processes can be generated in making these devices.
Presentation at the annual NASA Electronic Parts and Packaging (NEPP) Program Electronic Technology Workshop (ETW). The material includes an update of progress in this NEPP task area over the past year, which includes testing, evaluation, and analysis of radiation effects data on the IBM 32 nm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) process. The testing was conducted using test vehicles supplied by directly by IBM.