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At least 163 records · Page 9

Quantum Mechanical Study of Nanoscale MOSFET

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Svizhenko, Alexei↗

Chloride Ion Transport by the E. coli CLC Cl – /H + Antiporter: A Combined Quantum-Mechanical and Molecular-Mechanical Study

We performed steered molecular dynamics (SMD) and umbrella sampling simulations of Cl – ion migration through the transmembrane domain of a prototypical E. coli CLC Cl – /H + antiporter by employing combined quantum-mechanical (QM) and molecular-mechanical (MM) calculations. The SMD simulations revealed interesting conformational changes of the protein. While no large-amplitude motions of the protein were observed during pore opening, the side chain rotation of the protonated external gating residue Glu148 was found to be critical for full access of the channel entrance by Cl – . Moving the anion into the external binding site (S ext ) induced small-amplitude shifting of the protein backbone at the N-terminal end of helix F. As Cl – traveled through the pore, rigid-body swinging motions of helix R separated it from helix D. Helix R returned to its original position once Cl – exited the channel. Population analysis based on polarized wavefunction from QM/MM calculations discovered significant (up to 20%) charge loss for Cl – along the ion translocation pathway inside the pore. The delocalized charge was redistributed onto the pore residues, especially the functional groups containing π bonds (e.g., the Tyr445 side chain), while the charges of the H atoms coordinating Cl – changed almost negligibly. Potentials of mean force computed from umbrella sampling at the QM/MM and MM levels both displayed barriers at the same locations near the pore entrance and exit. However, the QM/MM PMF showed higher barriers (~10 kcal/mol) than the MM PMF (~2 kcal/mol). Binding energy calculations indicated that the interactions between Cl – and certain pore residues were overestimated by the semi-empirical PM 3 Hamiltonian and underestimated by the CHARMM36 force fields, both of which were employed in the umbrella sampling simulations. In particular, CHARMM36 underestimated binding interactions for the functional groups containing π bonds, missing the stabilizations of the Cl – ion due to electron delocalization. The results suggested that it is important to explore these quantum effects for accurate descriptions of the Cl – transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermoelectric properties of topological insulator Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3}, and Bi{sub 2}Se{sub 3} thin film quantum wells

The thermoelectric (TE) figure of merit ZT of topological insulator Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3}, and Bi{sub 2}Se{sub 3} thin film quantum wells is calculated for thicknesses below 10 nm, for which hybridization of the surface states as well as quantum confinement in the bulk are individually predicted to enhance ZT. Here, the question is addressed what ZT can be expected from coexisting surface and bulk states in such quantum wells. It is demonstrated that the parallel contributing bulk and surface channels tend to cancel each other out. This is because the surface-to-volume ratios of the thin films prevent the domination of transport through a single channel and because the individual bulk and surface ZTs are optimized at different Fermi levels.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

In-plane electric fields and the 𝜈 = $\frac{5}{2}$ fractional quantum Hall effect in a disk geometry

The 𝜈 = $\frac{5}{2}$ fractional quantum Hall effect is of experimental and theoretical interest due to the possible non-Abelian statistics of the excitations in the electron liquid. A small voltage difference across a sample applied in experiments to probe the system is often ignored in theoretical studies due to the Galilean invariance in the thermodynamic limit. No experimental sample, however, is Galilean invariant. In this Rapid Communication, we explore the effects of the probe electric fields in a disk geometry with finite thickness. We find that weak probe fields enhance the Moore-Read Pfaffian state, but sufficiently strong electric fields destroy the incompressible state. In a disk geometry, the behavior of the system depends on the polarity of the applied radial field, which can potentially be observed in experiments using a Corbino disk configuration. Finally, our simulation also shows that the application of such a field enhances the coherence length of quasiholes propagating through the edge channels.

exact diagonalization↗

Upper limit power for self-guided propagation of intense lasers in plasma

It is shown that there is an upper-limit laser power for self-focusing of a laser pulse in plasma in addition to the well-known lower-limit critical power set by the relativistic effect. This upper limit is caused by the transverse ponderomotive force of the laser, which tends to expel plasma electrons from the laser propagating area. Furthermore, there is a lower-limit plasma density for a given laser spot size, below which self-focusing does not occur for any laser power. Both the lower-limit density and the upper-limit power are derived theoretically and verified by two-dimensional and three-dimensional particle-in-cell simulations. It is also found that plasma channels may be unfavorable for stable guiding of lasers above the upper-limit power.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

The impact of the scaling of the channel length on the performances of metal-oxide-semiconductor field effect transistors, based on two-dimensional (2D) channel materials, is theoretically investigated, using density functional theory combined with the non-equilibrium Green's function method. It is found that the scaling of the channel length below 10 nm leads to strong device performance degradations. Our simulations reveal that this degradation is essentially due to the tunneling current flowing between the source and the drain in these aggressively scaled devices. It is shown that this electron tunneling process is modulated by the effective mass of the 2D channel material, and sets the limit of the scaling in future transistor designs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Improvement of nonlinear harmonics in free electron laser with planar wiggler

Spontaneous emission of free electron laser with planar wiggler and ion-channel guiding is calculated analytically and possibility of emission at up-shifted wiggler or ion-channel betatron frequency and their harmonics has been found. To investigate the nonlinear odd harmonics, a set of self-consistent nonlinear differential equations that governs the evolution of radiation and electron beam are derived and solved numerically by Runge-Kutta method. Using the simulation code, gain improvement of third harmonic is studied in the range of microwave frequency by applying ion-channel guiding for a cold beam. It is shown that the combination of the ion-channel and a prebunched electron beam increases the amplitude of the third harmonic of the radiation and decreases its saturation length. The relation between the linear and nonlinear harmonics is discussed.

43 PARTICLE ACCELERATORS↗

Recent Progress in Nuclear Lattice Simulations

We review several recent results on lattice simulations by the Nuclear Lattice Effective Field Theory Collaboration. In the first part we discuss the implementation of nuclear forces on the lattice using chiral effective field theory. The new development we highlight is the use of non-local lattice operators to achieve a simpler spin channel decomposition, in contrast with previous studies that considered only local interactions. In the second part, we present evidence that nuclear physics is close to a quantum phase transition. This development is also linked to the study of the differences between local and non-local interactions. In the final part we further explore the link between the nuclear forces and nuclear structure. We consider the simplest possible nuclear interaction which can accurately reproduce the ground state energies of neutron matter, light nuclei, and medium-mass nuclei. We discuss what these recent developments say about the emergence of nuclear structure from nuclear forces and the road ahead for nuclear lattice simulations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

An insight into non-emissive excited states in conjugated polymers

Conjugated polymers in the solid state usually exhibit low fluorescence quantum yields, which limit their applications in many areas such as light-emitting diodes. Despite considerable research efforts, the underlying mechanism still remains controversial and elusive. Here, the nature and properties of excited states in the archetypal polythiophene are investigated via aggregates suspended in solvents with different dielectric constants (ε). In relatively polar solvents (ε>~ 3), the aggregates exhibit a low fluorescence quantum yield (QY) of 2–5%, similar to bulk films, however, in relatively nonpolar solvents (ε<~ 3) they demonstrate much higher fluorescence QY up to 20–30%. A series of mixed quantum-classical atomistic simulations illustrate that dielectric induced stabilization of nonradiative charge-transfer (CT) type states can lead to similar drastic reduction in fluorescence QY as seen experimentally. In conclusion, fluorescence lifetime measurement reveals that the CT-type states exist as a competitive channel of the formation of emissive exciton-type states.

36 MATERIALS SCIENCE↗

Structural complexity of quantum networks

Quantum network is a set of nodes connected with channels, through which the nodes communicate photons and classical information. Classical structural complexity of a quantum network may be defined through its physical structure, i.e. mutual position of nodes and channels connecting them. We show here that the classical structural complexity of a quantum network does not restrict the structural complexity of entanglement graphs, which may be created in the quantum network with local operations and classical communication. We show, in particular, that 1D quantum network can simulate both simple entanglement graphs such as lattices and random graphs and complex small-world graphs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Regular and irregular dynamics of spin-polarized wavepackets in a mesoscopic quantum dot at the edge of topological insulator

The dynamics of Dirac–Weyl spin-polarized wavepackets driven by a periodic electric field is considered for the electrons in a mesoscopic quantum dot formed at the edge of the two-dimensional HgTe/CdTe topological insulator with Dirac–Weyl massless energy spectra, where the motion of carriers is less sensitive to disorder and impurity potentials. It is observed that the interplay of strongly coupled spin and charge degrees of freedom creates the regimes of irregular dynamics in both coordinate and spin channels. The border between the regular and irregular regimes determined by the strength and frequency of the driving field is found analytically within the quasiclassical approach by means of the Ince–Strutt diagram for the Mathieu equation, and is supported by full quantum-mechanical simulations of the driven dynamics. The investigation of quasienergy spectrum by Floquet approach reveals the presence of non-Poissonian level statistics, which indicates the possibility of chaotic quantum dynamics and corresponds to the areas of parameters for irregular regimes within the quasiclassical approach. We find that the influence of weak disorder leads to partial suppression of the dynamical chaos. Our findings are of interest both for progress in the fundamental field of quantum chaotic dynamics and for further experimental and technological applications of spindependent phenomena in nanostructures based on topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Problem-free time-dependent variational principle for open quantum systems

Methods of quantum nuclear wave-function dynamics have become very efficient in simulating large isolated systems using the time-dependent variational principle (TDVP). However, a straightforward extension of the TDVP to the density matrix framework gives rise to methods that do not conserve the energy in the isolated system limit and the total system population for open systems where only energy exchange with environment is allowed. These problems arise when the system density is in a mixed state and is simulated using an incomplete basis. Thus, the basis set incompleteness, which is inevitable in practical calculations, creates artificial channels for energy and population dissipation. To overcome this unphysical behavior, we have introduced a constrained Lagrangian formulation of TDVP applied to a non-stochastic open system Schrödinger equation [L. Joubert-Doriol, I. G. Ryabinkin, and A. F. Izmaylov, J. Chem. Phys. 141, 234112 (2014)]. While our formulation can be applied to any variational ansatz for the system density matrix, derivation of working equations and numerical assessment is done within the variational multiconfiguration Gaussian approach for a two-dimensional linear vibronic coupling model system interacting with a harmonic bath.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lattice NRQCD study on in-medium bottomonium spectra using a novel Bayesian reconstruction approach

We present recent results on the in-medium modification of S- and P-wave bottomonium states around the deconfinement transition. Our study uses lattice QCD with N{sub f} = 2 + 1 light quark flavors to describe the non-perturbative thermal QCD medium between 140MeV < T < 249MeV and deploys lattice regularized non-relativistic QCD (NRQCD) effective field theory to capture the physics of heavy quark bound states immersed therein. The spectral functions of the {sup 3}S{sub 1} (ϒ) and {sup 3}P{sub 1} (χ{sub b1}) bottomonium states are extracted from Euclidean time Monte Carlo simulations using a novel Bayesian prescription, which provides higher accuracy than the Maximum Entropy Method. Based on a systematic comparison of interacting and free spectral functions we conclude that the ground states of both the S-wave (ϒ) and P-wave (χ{sub b1}) channel survive up to T = 249MeV. Stringent upper limits on the size of the in-medium modification of bottomonium masses and widths are provided.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Plasma-wall interaction in Hall thrusters with magnetic lens configuration

Some recently developed Hall thrusters utilize a magnetic field configuration in which the field lines penetrate the thruster walls at a high incidence angle. This so-called magnetic lens leads to an electric field pointing away from the walls, which is expected to reduce ion losses and improve thruster efficiency. This configuration also introduces an interesting behavior in the sheath formation. At sufficiently large angles, ions are repelled from the wall, and sheath collapse is expected. We use a plasma simulation code to investigate this phenomenon in detail. We consider the role of the magnetic field incidence angle, secondary electron emission, and a magnetic mirror. Numerical study confirms the theoretical predictions, and at large angles, ions are seen to turn away from the wall. We also consider the role of the magnetic field geometry on ion wall flux and channel erosion, and observe reduction in both quantities as the magnetic field incidence angle is increased.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Statistical investigations on nitrogen-vacancy center creation

Quantum information technologies require networks of interacting defect bits. Color centers, especially the nitrogen vacancy (NV{sup −}) center in diamond, represent one promising avenue, toward the realisation of such devices. The most successful technique for creating NV{sup −} in diamond is ion implantation followed by annealing. Previous experiments have shown that shallow nitrogen implantation (<10 keV) results in NV{sup −} centers with a yield of 0.01%–0.1%. We investigate the influence of channeling effects during shallow implantation and statistical diffusion of vacancies using molecular dynamics and Monte Carlo simulation techniques. Energy barriers for the diffusion process were calculated using density functional theory. Our simulations show that 25% of the implanted nitrogens form a NV center, which is in good agreement with our experimental findings.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Mitigating Depolarizing Noise on Quantum Computers with Noise-Estimation Circuits

A significant problem for current quantum computers is noise. While there are many distinct noise channels, the depolarizing noise model often appropriately describes average noise for large circuits involving many qubits and gates. We present a method to mitigate the depolarizing noise by first estimating its rate with a noise-estimation circuit and then correcting the output of the target circuit using the estimated rate. The method is experimentally validated on the simulation of the Heisenberg model. We find that our approach in combination with readout-error correction, randomized compiling, and zero-noise extrapolation produces results close to exact results even for circuits containing hundreds of CNOT gates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

ON THE APPARENT NARROWING OF RADIO RECOMBINATION LINES AT HIGH PRINCIPAL QUANTUM NUMBERS

We critically analyze the Bell et al. findings on 'anomalous' widths of high-order hydrogen radio recombination lines in the Orion Nebula at 6 GHz. We review their method of modified frequency switching and show that the way this method is used for large {Delta}n is not optimal and can lead to misinterpretation of measured spectral line parameters. Using a model of the Orion Nebula, conventional broadening theory, and Monte Carlo simulation, we determine a transition zone n = 224, ..., 241 ({Delta}n = 11, ..., 14), where measurement errors grow quickly with n and become comparable with the measurement values themselves. When system noise and spectrum channelization are accounted for, our simulation predicts 'processed' line narrowing in the transition zone similar to that reported by Bell et al. We find good agreement between our simulation results and their findings, both in line temperatures and widths. We conclude, therefore, that Bell et al.'s findings do not indicate a need to revise Stark broadening theory.

79 ASTRONOMY AND ASTROPHYSICS↗

Polar semiconductor heterojunction structure energy band diagram considerations

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗