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At least 163 records · Page 9

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NASA NTRS1981

Advanced high temperature thermoelectrics for space power

Preliminary results from a spacecraft system study show that an optimum hot junction temperature is in the range of 1500 K for advanced nuclear reactor technology combined with thermoelectric conversion. Advanced silicon germanium thermoelectric conversion is feasible if hot junction temperatures can be raised roughly 100 C or if gallium phosphide can be used to improve the figure of merit, but the performance is marginal. Two new classes of refractory materials, rare earth sulfides and boron-carbon alloys, are being investigated to improve the specific weight of the generator system. Preliminary data on the sulfides have shown very high figures of merit over short temperature ranges. Both n- and p-type doping have been obtained. Pure boron-carbide may extrapolate to high figure of merit at temperatures well above 1500 K but not lower temperature; n-type conduction has been reported by others, but not yet observed in the JPL program. Inadvertant impurity doping may explain the divergence of results reported.

Lockwood, A.↗

NASA NTRS1980

Redistribution of volatiles during lunar metamorphism

Thermal release profiles of Pb, Zn, and Cd in sample 66095 (highly shocked breccia with melt rock matrix) showed that these volatiles were mostly present on the surface of the grains. Zn in rusty grains from 66095 was also mostly surface Zn, probably from sphalerite in grain boundaries and cracks. Simulation experiments of volatile transfer showed that Fe, FeCl2, iron phosphide, and troilite (FeS) can be produced and transported during subsolidus reactions. These results suggest that volatiles, rust, schreibersite, and possible siderophiles which are observed in lunar highland samples might have been redistributed during disequilibrium thermal metamorphism in hot ejecta blankets, and were not necessarily introduced by volcanic activity or meteoritic addition.

Cirlin, E. H.↗

NASA NTRS1982

Rust and schreibersite in Apollo 16 highland rocks - Manifestations of volatile-element mobility

Rust is a manifestation of halogen and volatile-metal mobility in the lunar environment. Schreibersite is stable as the primary phosphorus-bearing phase in the highland rocks, a consequence of the inherently low oxygen fugacity within impact-generated melts. Apatite and whitlockite are subordinate in these rocks. The partitioning of P into phosphide in impact-generated melts, and the failure of phosphate to crystallize, effects a decoupling of the halogens and phosphorus. Of the Apollo 16 rocks, 63% contain rust, 70% contain schreibersite, and 52% contain both phases, thereby establishing the pervasiveness of volatile-elements throughout the highland rocks. The major portion of these volatile-bearing phases occur in impact melt-rocks or in breccia matrices. Rhabdites of schreibersite in some of the FeNi grains indicate that there is a meteoritic contribution to the phosphorus in these rocks. Cl/P2O5 ratios in lunar highland rocks are a function of secondary effects, with any apparent Cl-P correlations being coincidential. The present observations preclude the validity of models based on such elemental ratios in these rocks. The presence of rust in the clast laden matrices of pristine rocks indicates fugitive element localization. Pristine clasts may have been contaminated. The basis for a pristine volatile chemistry is questioned.

Hunter, R. H.↗

NASA NTRS1982

A revision of metallographic cooling rate curves for chondrites

New metallographic cooling rate curves for the chondritic meteorites are calculated. On the basis of these curves, estimated cooling rates for the chondrites are twice as fast as those determined using the Wood (1967) curves. This change in estimated rates derives from the use of the most recent Fe-Ni phase diagram and the use of more accurate computational techniques. The new cooling rate curves can be applied to meteorites with P contents in the metal phase less than 0.01 wt%. They should be applied with some caution to meteorites, such as the unequilibrated ordinary chondrites, where the metal grains may not have equilibrated above approximately 850K, or to metallic phases which contain P in quantities greater than 0.01 wt% and/or phosphides.

Willis, J.↗

NASA NTRS1984

Growing Single-Crystal Sheets by Controlled Cooling

Immersed heating and cooling elements establish desired temperature gradients. Method envisions use of high-pressure, Czochralski crystalgrowth apparatus as presently employed to grow gallium arsenide and gallium phosphide but modified to accept deep crucibles so deep layers of encapsulant used, plus X-ray or optical or sonic-imaging system to observe growth of crystal submerged in encapsulant. Method especially applicable to horizontal growth of ribbons of compound semiconductors.

Morrison, A. D.↗

NASA NTRS1983

Design rules for a 100X maximum efficiency GaAs concentrator solar cell for space applications

The preference of N on P as the preferred structure rather than the common P on N structure, the design of an improved transparency top contact based on the separation of the grid and bus bars, and the identification of gallium phosphide as an improved window layer, replacing the (GaAl) are investigated.

Barnett, A. N.↗

NASA NTRS1984

Investigation of the thermophysical properties of high-melting materials with the aid of a complex of instruments

The evaporation rate, vapor pressure, heats of evaporation reaction (sublimation, dissociation), enthalpy, electrical resistance, heat capacity, emissivity, and heat conductivity of various carbides, borides, sulfides, nitrides, selenides, and phosphides were investigated. A set of high temperature high vacuum devices, calorimeters (designed for operation at 400 to 1300 K and from 1200 K), and mass spectrometers, most of which were specially developed for these studies, is described.

Bolgar, A. S.↗

NASA NTRS1984

Development of advanced thermoelectric materials

The development of an advanced thermoelectric material for radioisotope thermoelectric generator (RTG) applications is reported. A number of materials were explored. The bulk of the effort, however, was devoted to improving silicon germanium alloys by the addition of gallium phosphide, the synthesis and evaluation of lanthanum chrome sulfide and the formulation of various mixtures of lanthanum sulfide and chrome sulfide. It is found that each of these materials exhibits promise as a thermoelectric material.

Source record↗

NASA NTRS1984

SP-100 space nuclear power system

A baseline design concept for a 100 kWe nuclear reactor space power system is described. The concept was developed under contract from JPL as part of a joint program of the DOE, DOD, and NASA. The major technical and safety constraints influencing the selection of reactor operating parameters are discussed. A lithium-cooled compact fast reactor was selected as the best candidate system. The material selected for the thermoelectric conversion system was silicon germanium (SiGe) with gallium phosphide doping. Attention is given to the improved safety of the seven in-core control rod configuration.

Given, R. W.↗

NASA NTRS1986

Low-Resistivity Zinc Selenide for Heterojunctions

Magnetron reactive sputtering enables doping of this semiconductor. Proposed method of reactive sputtering combined with doping shows potential for yielding low-resistivity zinc selenide films. Zinc selenide attractive material for forming heterojunctions with other semiconductor compounds as zinc phosphide, cadmium telluride, and gallium arsenide. Semiconductor junctions promising for future optoelectronic devices, including solar cells and electroluminescent displays. Resistivities of zinc selenide layers deposited by evaporation or chemical vapor deposition too high to form practical heterojunctions.

Stirn, R. J.↗

NASA NTRS1984

Optical and interfacial electronic properties of diamond-like carbon films

Hard, semitransparent carbon films were prepared on oriented polished crystal wafers of silicon, indium phosphide and gallium arsenide, as well as on KBr and quartz. Properties of the films were determined using IR and visible absorption spectrocopy, ellipsometry, conductance-capacitance spectroscopy and alpha particle-proton recoil spectroscopy. Preparation techniques include RF plasma decomposition of methane (and other hydrocarbons), ion beam sputtering, and dual-ion-beam sputter deposition. Optical energy band gaps as large as 2.7 eV and extinction coefficients lower than 0.1 at long wavelengths are found. Electronic state densities at the interface with silicon as low as 10 to the 10th states/eV sq cm per were found.

Woollam, J. A.↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates

An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2.

Miyoshi, Kazuhisa↗

NASA NTRS1987

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Coutts, T. J.↗

NASA NTRS1985

Potential for use of InP solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗

NASA NTRS1986

Properties of silicon-germanium thermoelectric alloys with additives

The paper reports the results of measurements (Seebeck and Hall coefficients, electrical resistivity, and thermal conductivity) on silicon-germanium (Si-20 at. pct Ge) alloy with boron phosphide, B(6.5)P) as an additive, prepared as described by McLane et al. (1986). The power factor (Seebeck coefficient squared divided by electrical resistivity) and the thermal conductivity of SeGe/B(6.5)P material were found to be lower than for the 'standard' SiGe (Si-22 at. pct Ge) material. However, no net improvement was achieved in the figure-of-merit of the sample tested. It is suggested that structural inhomogeneities, revealed by a SEM examination, might be responsible for this lack of improvement.

Mclane, George↗

NASA NTRS1987

Mechanical strength and tribological behavior of ion-beam-deposited boron nitride films on non-metallic substrates

Miyoshi, Kazuhisa↗

NASA NTRS1988

InP homojunction solar cell performance on the LIPS 3 flight experiment

Performance data for the NASA Lewis Research Center indium phosphide n+p homojunction solar cell module on the LIPS 3 Flight Experiment is presented. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ deg inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.

Brinker, David J.↗

NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗