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At least 163 records · Page 9

Embedded passives emulator FY2003 interim report

The National Aeronautics and Space Administration Electronic Parts and Packaging (NEPP) Program has been evaluating state-of-the-art Embedded Passive Technology for the printed circuit board (PCB) industry for the past several years and has conducted its own testing on embedded passive coupons (resistors and capacitors). This document is a progress report of the work performed through fiscal year 2008 by NASA and the Navy to convert an existing PWB (printed wiring board) design to a design that incorporates embedded passive components. The work is being performed through a memorandum of understanding (MOU) between the NEPP Program (NASA) and the Naval Surface Warfare Center (NSWC) Crane Emerging Critical Interconnect Technology (ECIT) Program. NSWC Crane’s ECIT Program has funding to convert two PCB designs from the military and aerospace industry to a PCB design with embedded passives. ECIT will provide a design team that will take a well characterized design and convert it to an embedded design. They will also provide electrical modeling and layout expertise as well as build the PWB in their facility in Indiana. NEPP, through the Jet Propulsion Laboratory (JPL), will assemble any passives deemed not suitable for embedding and the active components and electrically test the new design to the existing (non-embedded) design

Gerke, David↗

Feasibility of Passive Cryogenic Cooling for Solar Powered Outer Planetary Missions

Spacescience instruments with cooled detectors require innovative thermal cooling solutions to meet science objectives. Detector sensitivity increases with decreasing temperature and low optics temperatures are often needed to reduce background photon noise. As the detector spectral range coverage increases from the visible to far infrared also requires lower detector temperatures. Increasing demands on detector performance lead to larger format detectors and higher refresh rates resulting in significant increases in power dissipation. Passive coolers rely on emissive power of radiating surfaces to reject heat to space. As the operating temperature requirements of detectors and optics decreases, the ability to reject heat to space becomes increasingly more difficult. Reducing both cooler internal parasitic and external environmental heat loads and maximizing the passive cooler field of view to space will enhance performance. While instrument heat loads and passive cooler parasitic heat loads are controlled by instrument designers, the external environmental heat loads and cooler views to space are governed by spacecraft and mission designers. Solar powered planetary missions require large arrays to generate sufficient power for spacecraft subsystems and payloads. Two or more solar array wings with cell coverage of the order of 40-80 m2 are often needed to generate sufficient power at 3-6 AU. These large arrays are typically symmetrically configured and can extend tens of meters. The arrays along with spacecraft attitude requirements near the target planetary bodies pose significant challenges for passive cooling at large AU. It is very difficult to provide a clear field of view to space for the cooler with large articulating arrays while keeping solar loads from impinging the cooler and meeting the spacecraft attitude science pointing requirements. This is counter intuitive because of the decreasing solar flux and colder planetary body temperatures at large AU. This paper presents the challenges and opportunities of passive cryogenic cooling versus active cooling for solar powered planetary missions.

Rodriguez, Jose I.↗

Spaceborne Passive-Microwave and Visible/IR Observations of Severe Weather: Leveraging Multiple Perspectives for Detection, Validation, and Climatologies

Severe weather phenomena not only are responsible for damages to property, infrastructure, and agriculture, they are also difficult to measure in-situ and have been associated with large errors and uncertainties in precipitation estimation that pose challenges to establishing the current climatology of severe storms and their future trend in a changing Earth system. Severe convection exhibits distinct signatures in remote-sensing datasets, where it is manifested as textured or overshooting cloud tops in visible/IR imagery, or resulting a prominent brightness temperature depression in passive-microwave imagery. These distinct deep convective signatures in spaceborne datasets have been leveraged to analyze severe thunderstorms, create climatologies, improve prediction, and provide a method of detection around the globe where traditional ground-based data may be inconsistent or unavailable. Visible/IR and passive-microwave instruments are powerful tools for detecting severe thunderstorms, however, these datasets exhibit key limitations when examined individually: passive-microwave channels have large footprint and exhibit non-uniform beam filling. The visible/IR instruments have fine horizontal resolution but are limited by their insensitivity to processes occurring below cloud top. We investigate the nearly simultaneous and colocated MODIS (visible/IR) and AMSR-E (passive-microwave) onboard the Aqua satellite to leverage both datasets together and assess the extent to which these datasets can be combined to improve severe thunderstorm detection. We pair passive microwave, IR, and visible signatures of severe convection with ground-based weather radar, severe weather reports, and environmental parameters defined by the MERRA-2 reanalysis to characterize potentially severe convective storms observed by Aqua MODIS and AMSR-E. We will discuss how MODIS and AMSR-E signatures may be used together to diagnose storm properties and processes, and how the interrelationships between the signatures varies seasonally and geographically.

Sarah D. Bang↗

Variability in Mt. Sharp Group Bedrock as Seen By ChemCam Passive and Active Spectra

The Curiosity rover landed in Gale crater in August 2012 and has since been travelling up the central sedimentary mound known as Mt. Sharp. The ChemCam instrument on Curiosity was designed primarily for the use of Laser Induced Breakdown Spectroscopy (LIBS), where a laser ablates a small amount of material from the target and the spectrum of the resulting plasma yields elemental abundance data. ChemCam’s three spectrometers range from 240-905 nm and can also take passive spectra (without the use of the laser). The spectral range ChemCam passive spectra observe is sensitive to charge-transfer and crystal field absorptions related to iron-bearing minerals. In the first 2934 sols of Curiosity’s mission, 9,400 passive spectra were taken of bedrock targets in Mt. Sharp’s Murray and Carolyn Shoemaker formations. We examine these spectra using spectral slope/ratio and band depth calculations as well as Principal Component Analysis (PCA). For the first time, paired passive spectra and LIBS elemental abundances are compared on a large scale. Finally, CheMin data are compared to ChemCam passive observations to understand sources of spectral variability.

H T Manelski↗

Dopant diffused Si surface passivation by H 2 S gas reaction and quinhydrone-methanol treatment

Phosphorus (n + ) and boron (p + ) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J 0 ), strongly depends on the diffusion type and the passivation method. H 2 S reaction at 550ºC passivates n + diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO 2 /SiN X ), while QH-MeOH passivates p + diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide / silicon nitride stack (Al 2 O 3 /SiN X ).

Das, Ujjwal↗

Passive Safety System Reliability Analysis: Lessons Learned and Open Items

Passive safety systems have multiple benefits, largely stemming from their high functional reliability due to their simplicity and lack of dependencies. However, accurately assessing the reliability of passive systems can be challenging due in large part to the possibility of functional failures. Argonne National Laboratory (Argonne) has been involved in several recent efforts concerning the reliability assessment of passive safety systems for advanced, non-light water reactors (non-LWRs). These efforts have focused on the development and application of mechanistic methods for the evaluation of passive system reliability, which rely on system modelling and uncertainty analyses to derive reliability values for use in probabilistic safety assessments (PSAs). Further information on these efforts is provided in ref [1]. The current paper reviews key lessons learned through these projects, along with outstanding open items regarding the reliability assessment of passive systems.

Grabaskas, David↗

Reducing Cost of Chlorinated Volatile Organic Compound Remediation by Transitioning from Active to Passive Soil Vapor Extraction - 20157

Areas of high chlorinated volatile organic compound (cVOC) contamination at the Savannah River Site (SRS) have been undergoing remediation via soil vapor extraction, sometimes coupled with thermal treatments to enhance extraction rates. These active systems are effective in removing large amounts of contaminant mass from the subsurface and mitigating the impacts to groundwater. However, as extraction rates decline, costs must be evaluated with respect to the benefit of continued active operation. A decision framework for identifying conditions when a transition to a more passive remediation is appropriate has been developed with state and federal regulatory agencies. Two remediation areas have recently been transitioned from active soil vapor extraction (ASVE) to passive soil vapor extraction (PSVE) at the SRS. Performance evaluation goals including plume stabilization, overall mass removal trends, environmental sustainability and costs were considered in transitioning from active remediation to passive technologies at both sites. At the Dynamic Underground Stripping (DUS) project at the M-Area Settling Basin, ASVE was combined with steam injection to extract cVOCs during active operations. Steam injection occurred from September 2005 to September 2009. DUS utilized 63 steam injection wells, 34 active vapor extraction wells, and 3 active soil vapor extraction units (SVEUs). Two active SVEUs had 60 horsepower blowers; the third had a 25-horsepower blower. Mass removal was closely tracked during DUS operations; over 181,437 kilograms (400,000 pounds) of cVOCs were removed while active steam injection occurred. After steaming was stopped, ASVE continued. The 34 active wells were evaluated in 2012. The ASVE wells were grouped into categories of high, medium, and low extraction rates. High producing wells remained connected to a single active SVEU. Low producing wells were abandoned, and the medium producing wells were transitioned to PSVE (Microblowers{sup TM}). Microblowers{sup TM} utilize a dedicated blower per well and are solar powered. This passive technology provides energy, maintenance, and operation costs savings while still providing an efficient reduction in cVOC migration to groundwater. In 2018, the remaining ASVE wells were evaluated again. The purpose of this testing was to identify which wells removed the most mass. An optimal well configuration was determined. The criteria to discontinue ASVE was removal of less than 18 kilograms (40 pounds) per week of cVOCs. After 3 months of shutdown (rebound conditions), 2.7 kilograms (5.9 pounds) of cVOCs per week were being removed. Data from the rebound test justified ending ASVE and transitioning wells with higher extraction rates to PSVE. Wells that had depleted the cVOC mass within their zone of influence were abandoned. Performance data from existing PSVE wells justified ending PSVE at wells with depleted extraction rates. Currently the system has 16 PSVE wells operating. Another ASVE system was being used to treat cVOC contaminated soil at the A-Area Miscellaneous Rubble Pile (AMRP) at SRS. System operation began in 2004, with 7 ASVE wells connected to a 60- horsepower blower. Mass removal rates and contaminant concentrations remained consistently low over the ASVE lifespan at AMRP. This indicated that mass removal was diffusion limited. With this data, the 7 ASVE wells were transitioned to PSVE in 2017. Twelve pressure monitoring points were also transitioned to PSVE wells. AMRP currently has 19 PSVE wells operating. Both transitions from active to passive remediation had concurrence from the United States Environmental Protection Agency and the South Carolina Department of Health and Environmental Control. These transitions ensure that only the necessary amount of energy is being exerted to remediate the environment. (authors)

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Mixed Ligand Passivation as the Origin of Near-Unity Emission Quantum Yields in CsPbBr 3 Nanocrystals

Key features of syntheses, involving the quaternary ammonium passivation of CsPbBr 3 nanocrystals (NCs), include stable, reproducible and large (often near-unity) emission quantum yields (QYs). The archetypical example involves didodecyl dimethyl ammonium (DDDMA + ) passivated CsPbBr 3 NCs where robust QYs stem from interactions between DDDMA + and NC surfaces. Despite widespread adoption of this synthesis, specific ligand-NC surface interactions responsible for large DDDMA + -passivated NC QYs have not been fully established. Multidimensional nuclear magnetic resonance experiments now reveal a new DDDMA + -NC surface interaction, beyond established “tightly-bound” DDDMA + interactions, which strongly affects observed emission QYs. Depending upon the existence of this new DDDMA + coordination, NC QYs vary broadly between 60% and 85%. More importantly, these measurements reveal surface passivation through unexpected didodecyl ammonium (DDA + ) that works in concert with DDDMA + , to produce near unity (i.e. >90%) QYs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optimizing 2D passivation for enhancing performance of fully air-processed carbon electrode-based perovskite solar cells

Air-processed carbon-based perovskite solar cells (C-PSCs) offer scalable and cost-effective photovoltaic manufacturing but face efficiency loss compared to metal-contact perovskite solar cells. Surface passivation of three-dimensional (3D) perovskites with two-dimensional (2D) perovskite layers has emerged as a promising strategy to enhance device performance. However, the mechanisms by which 2D perovskites more effectively improve C-PSC efficiency and stability remain underexplored. This study investigates the efficacy of 2D/3D heterostructures using n-hexylammonium bromide (C6Br), phenethylammonium iodide (PEAI), and n-octylammonium iodide (OAI) as surface passivators for C-PSCs. C-PSCs treated with C 6 Br achieved a champion power conversion efficiency (PCE) of 21.0%. This enhancement is attributed to superior defect passivation, improved charge extraction, and suppressed non-radiative recombination. Transient ion-drift characterization demonstrates that C 6 Br and OAI reduce ionic conductivity by 2–3 orders of magnitude, correlating with enhanced operational stability under continuous illumination. Our findings highlight the role of short-chain bromide cations (C 6 Br) in optimizing halide-mediated defect healing and interfacial band alignment, positioning 2D-passivated C-PSCs as viable competitors to conventional metal-contact perovskite solar cells.

14 SOLAR ENERGY↗

Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells

A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.

14 SOLAR ENERGY↗

Fermi Level Engineering of Passivation and Electron Transport Materials for p-Type CuBi 2 O 4 Employing a High-Throughput Methodology

Metal oxide semiconductors are promising for solar photochemistry if the issues of excessive charge carrier recombination and material degradation can be resolved, which are both influenced by surface quality and interface chemistry. Coating the semiconductor with an overlayer to passivate surface states is a common remedial strategy but is less desirable than application of a functional coating that can improve carrier extraction and reduce recombination while mitigating corrosion. Here, a data-driven materials science approach utilizing high-throughput methodologies, including inkjet printing and scanning droplet electrochemical cell measurements, is used to create and evaluate multi-element coating libraries to discover new classes of candidate passivation and electron-selective contact materials for p-type CuBi 2 O 4 . The optimized overlayer (Cu 1.5 TiO z ) improves the onset potential by 110 mV, the photocurrent by 2.8×, and the absorbed photon-to-current efficiency by 15.5% compared to non-coated photoelectrodes. It is shown that these enhancements are related to reduced surface recombination through passivation of surface defect states as well as improved carrier extraction efficiency through Fermi level engineering. This work presents a generalizable, high-throughput method to design and optimize passivation materials for a variety of semiconductors, providing a powerful platform for development of high-performance photoelectrodes for incorporation into solar-fuel generation systems.

36 MATERIALS SCIENCE↗

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗

Self‐Assembled Monolayer Templating for Engineered Nanopinholes in Passivated Contact Solar Cells

We present a novel self-assembled monolayer (SAM)-based technique to make nanopinhole-enabled passivated contacts on silicon solar cells by tuning the SAM coverage area and etch selectivity. We deposit trimethyl-silyl Si(CH 3 ) 3 groups using hexamethyldisilazane (HMDS) as the precursor over passivating dielectric layers and their stacks (SiO 2 , SiN x , SiO 2 /SiN x ) and interrupt the HMDS attachment chemistry shortly before a full monolayer is formed on its surface. Subsequent etching in dilute HF produces pinholes through the dielectric layers due to the higher etch resistance of the SAM to HF etching. The pinhole areal density (10 4 –10 8 /cm 2 ) and size (10–1000 nm) can be tuned both by duration of HMDS attachment and HF etch time. Pinholes were characterized by atomic force microscopy, tetramethylammonium hydroxide (TMAH) selective etch, and Ag decoration by electroless plating. Polysilicon (poly-Si) passivated contacts enabled by pinholes were formed by subsequent deposition of doped amorphous silicon (a-Si:H) followed by thermal crystallization and dopant drive-in. At optimal areal pinhole density ≈10 7 /cm 2 , contacts exhibit both passivation and carrier transport via pinholes as evidenced by electron beam induced current, transmission line measurements, and carrier lifetime measurements. Solar cells based with these pinhole contacts show V oc = 723 mV and FF = 80.3%. The remaining SAM layer does not affect device performance.

14 SOLAR ENERGY↗

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗

Intergranular corrosion of Ni-30Cr in high-temperature hydrogenated water after removing surface passivating film

Abstract High-resolution transmission electron microscopy and atom probe tomography are used to characterize the initial passivation and subsequent intergranular corrosion of degraded grain boundaries in a model Ni-30Cr alloy exposed to 360 °C hydrogenated water. Upon initial exposure for 1000 h, the alloy surface directly above the grain boundary forms a thin passivating film of Cr 2 O 3 , protecting the underlying grain boundary from intergranular corrosion. However, the metal grain boundary experiences severe Cr depletion and grain boundary migration during this initial exposure. To understand how Cr depletion affects further corrosion, the local protective film was sputtered away using a glancing angle focused ion beam. Upon further exposure, the surface fails to repassivate, and intergranular corrosion is observed through the Cr-depleted region. Through this combination of high-resolution microscopy and localized passive film removal, we show that, although high-Cr alloys are resistant to intergranular attack and stress corrosion cracking, degradation-induced changes in the underlying metal at grain boundaries make the material more susceptible once the initial passive film is breached.

(S)TEM↗

Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction

An efficient surface defect passivation is observed by reacting clean Si in a dilute hydrogen sulfide-argon gas mixture (< 5% H2S in Ar) for both n-type and p-type Si wafers with planar and textured surfaces. Surface recombination velocities of 1.5 and 8 cm/s are achieved on n-type and p-type Si wafers, respectively, at an optimum reaction temperature of 550oC that are comparable to the best surface passivation quality used in high efficiency Si solar cells. Surface chemical analysis using x-ray photoelectron spectroscopy shows that sulfur is primarily bonded in a sulfide environment, and synchrotron-based soft x-ray emission spectroscopy of the adsorbed sulfur atoms suggests the formation of S-Si bonds. Furthermore, the sulfur surface passivation layer is unstable in air, attributed to surface oxide formation and a simultaneous decrease of sulfide bonds. However, the passivation can be stabilized by a low-temperature (300oC) deposited amorphous silicon nitride (a-Si:NX:H) capping layer.

14 SOLAR ENERGY↗

Passivation Mechanisms in Locally Etched P-Type Poly-Si on Silicon Nitride/Silicon Oxide Stack

Tunneling oxide passivated contacts are quickly becoming the industry standard for high-efficiency c-Si based photovoltaic cells. Further development of these structures is essential to enable higher efficiencies and better reliability of cells. By utilizing poly-Si/SixNy/SiOx stacks, very high efficiencies have been demonstrated on small area cells. In this work we investigate the cause of the excellent passivation seen by these structures and show that the primary reason of the excellent passivation seen is the blocking B diffusion to the SiOx/c -Si interface. We also show that the interface between the silicon nitride and polysilicon affects B diffusion through to the c-Si interface. Finally, we demonstrate that the composition of the nitride used is of great importance, and that an incorrect nitride composition leads to B diffusion, and is directly correlated to poor passivation performance.

industries↗

Self-assembled multifunctional nanostructures for surface passivation and photon management in silicon photovoltaics

This work reports the fabrication and characterization of multifunctional, nanostructured passivation layers formed using a self-assembly process that provide both surface passivation and improved light trapping in crystalline silicon photovoltaic (PV) cells. Scalable block copolymer self-assembly and vapor phase infiltration processes are used to form arrays of aluminum oxide nanostructures (Al 2 O 3 ) on crystalline silicon without substrate etching. The Al 2 O 3 nanostructures are characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), and spectroscopic ellipsometry. Injection-level dependent photoconductance measurements are used to determine the effective carrier lifetime of the samples to confirm the nanostructures successfully passivate the Si surface. Finite element method simulations and reflectance measurement show that the nanostructures increase the internal rear reflectance of the PV cell by suppressing the parasitic optical losses in the metal contact. An optimized morphology of the structures is identified for their potential use in PV cells as multifunctional materials providing surface passivation, photon management, and carrier transport pathways.

14 SOLAR ENERGY↗