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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Flexible‐rate optoelectronic wireless transmission system at 101 GHz using multiband CAP‐PAM modulation and envelope detection

Abstract In this paper, we have experimentally demonstrated the first flexible‐rate optoelectronic terahertz wireless transmission system at 101 GHz based on multiband CAP‐PAM modulation and cost‐efficient envelope detection. Instead of traditional M‐QAM mapping, PAM‐N mapping is used in CAP modulation with low‐computational complexity. The system performances and optimal capacity in both single‐band case and multiband case are intensively investigated. The results show that the highest data rate for single‐band system is 13.35 Gbit/s with CAP‐PAM‐5 modulation, while the optimum aggregate transmission line rate of 8.49 Gbit/s can be obtained with 4‐sub‐bands CAP‐PAM‐{5,3,2,2} modulation under 7% FEC limit of 3.8 × 10 −3 for four‐user access.

Zhang, Jiao↗
DOE OSTI2016

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 °C. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 °C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Wideband tunable up-converting optoelectronic oscillator based on gain–loss compensation technology and stimulated Brillouin scattering

An optically wideband tunable up-converting optoelectronic oscillator (OEO) based on stimulated Brillouin scattering and gain–loss compensation is demonstrated and theoretically analyzed. In the proposed structure, Brillouin narrowband filter technique is implemented by introducing two pump lights with the frequency interval twice the Brillouin frequency shift (v{sub b}). The overlapping of the gain and the loss spectrum is used to realize a wideband tunable OEO. As a consequence, the tunability of the wideband of the output microwave signal at f{sub m}+2v{sub b} from 22.4 to 61.4 GHz can be realized by changing the signal under testing from 1 to 40 GHz. In addition, the transfer function of the system is given and the single sideband (SSB) phase noise is also evaluated theoretically. And the theoretical simulated the SSB phase noise is − 116.1 dBc/Hz at the 10 kHz offset when the f{sub m} = 25 GHz. Not only the OEO can convert a low-frequency IF signal to a high-frequency signal without introducing any high-Q electrical filter, but the frequency of the output signal is high enough and widely tunable. Because of the high frequency tunable capacity, the up-converting OEO might have a potential application in radar communication and millimeter wave generation systems.

42 ENGINEERING↗
DOE OSTI2019

Effects of growth temperatures on the structural and optoelectronic properties of sputtered zinc sulfide thin films for solar cell applications

The role of various substrate temperatures on the structural and optoelectronic properties of sputtered zinc sulfide (ZnS) thin films has been investigated in this work. The study of prepared film characterization has been done by XRD, AFM, UV–Vis spectrometry and Hall-effect measurement analysis. XRD patterns of the room temperature grown films reveal an amorphous nature, while the films deposited at 100 °C, 200 °C. 300 °C and 400 °C are found to be polycrystalline having the (111) preferential orientation. The optical bandgap values are found in the range of 3.18–3.61 eV depending on the substrate temperatures. The bulk and surface carrier densities are found in the order of 10{sup 12} cm{sup −3} and 10{sup 7} cm{sup −3}, respectively. The growth temperatures are also observed to have a significant effect on the electrical characteristic of the deposited films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Chalcogenide perovskite BaZrS 3 thin-film electronic and optoelectronic devices by low temperature processing

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS 3 ) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS 3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS 3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS 3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm 2 /Vs and 2.6 cm 2 /Vs, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiO x passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiO x passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiO x /c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiO x layers and eventually hydrogenated the a-Si/SiO x interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). Overall, the resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm 2 , whereas their contact resistivity is still low at 15 mO cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2019

Electrical and optical properties of low-bandgap oxide Zn 2 Mo 3 O 8 for optoelectronic applications

Semiconducting metal oxides are attractive for various applications since most oxides are non-toxic, stable, and easy to deposit. Wide band-gap materials have been studied more extensively, compared to low bandgap materials, which introduces limitations to the applications of oxides. Study of low band-gap semiconducting oxides can propel the usage of oxides in a wider range of applications. The electronic, structural, and optical properties of Zn 2 Mo 3 O 8 (ZMO) are investigated. Stoichiometric polycrystalline films of ZMO are deposited using pulsed laser deposition system at room temperature. The unintentionally n-doped films show a hall electron mobility of 0.7 cm 2 V -1 s -1 and have a bandgap of 2.1 eV. The photoelectron spectra contain complex peak profiles which are explained to be a manifestation of final state effects. The orbital contribution to the valence band of ZMO is probed using resonant photoelectron spectroscopy, which confirms that the valence band is composed of Mo 4d levels. The conduction and valence band edges are predicted to be at 4.2 eV and 6.3 eV, so most of the conventional wide band-gap oxides can be used as hole-blocking layers with ZMO. Under A.M. 1.5 illumination, single-sided Schottky diode with Fluorine-doped tin oxide/TiO 2 /ZMO/Au structure shows no photovoltaic action, possibly due to high exciton binding energy and low carrier drift lengths. However, the Schottky device shows a higher current under illumination, which suggests that with improvement in carrier drift lengths, ZMO can find applications in low-cost optoelectronic devices on flexible substrates like plastic or Polyethylene terephthalate.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Patchy Particle Model of the Hierarchical Self-Assembly of π-Conjugated Optoelectronic Peptides

Self-assembling peptides containing aromatic groups are an attractive target for bioelectronic materials design because of their ease of manufacture, biocompatibility, aqueous solubility, and chemical tunability. Microscopic understanding of the properties that control assembly is a prerequisite for rational design. In this work, we study the assembly of a family of DXXX-Π–XXXD oligopeptides possessing a π-conjugated core flanked by Asp-terminated tetrapeptide wings that display pH-triggered assembly into supramolecular aggregates. We develop a coarse-grained patchy particle model to conduct molecular dynamics simulations of the assembly of ten thousand oligopeptides over hundreds of nanometers and hundreds of microseconds. We study the effects of core and side chain interaction strength and side chain steric volume upon the morphology and kinetics of assembly. By characterizing the rate and fractal dimension of hierarchical nanoaggregate growth, we identify parameter regimes that favor rapid assembly of linear aggregates and map these regimes to sequence-defined candidate peptides for experimental synthesis and testing. Here, this work establishes new understanding of assembly on previously unexplored time and length scales and presents an efficient and extensible protocol for computational screening and prediction of promising peptide chemistries to assemble nanostructures with desirable optoelectronic properties.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Lattice Dynamics and Optoelectronic Properties of Vacancy-Ordered Double Perovskite Cs 2 TeX 6 (X = Cl – , Br – , I – ) Single Crystals

The soft, dynamic lattice of inorganic lead halide perovskite CsPbX 3 (X = Cl ⁻ , Br ⁻ , I ⁻ ) leads to the emergence of many interesting photophysical and optoelectronic phenomena. However, probing their lattice dynamics with vibrational spectroscopy remains challenging. The influence of the fundamental octahedral building block in the perovskite lattice can be better resolved in zero-dimensional (0D) vacancy-ordered double perovskites of form A 2 BX 6 . Here we study Cs 2 TeX 6 (X = Cl ⁻ , Br ⁻ , I ⁻ ) single crystals to yield detailed insight into the fundamental octahedral building block and to explore the effect that its isolation in the crystal structure has on structural and electronic properties. The isolated [TeX 6 ] 2- octahedral units serve as the vibrational, absorbing, and emitting centers within the crystal. Serving as the vibrational centers, the isolated octahedra inform the likelihood of a random distribution of 10 octahedral symmetries within the mixed-halide spaces, as well as the presence of strong exciton-phonon coupling and anharmonic lattice dynamics. Serving as the absorbing and emitting centers, the isolated octahedra exhibit compositionally tunable absorption (1.50-3.15 eV) and emission (1.31-2.11 eV) energies. Due to greater molecular orbital overlap between neighboring octahedra with increasing halide anion size, there is a transition from a more molecule-like electronic structure in Cs 2 TeCl 6 and Cs 2 TeBr 6 -as expected from the effective 0D nature of these single crystals-to a dispersive electronic structure in Cs 2 TeI 6 , typical of three-dimensional (3D) bulk single crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Theoretical and Experimental Study on the Optoelectronic Properties of Nb 3 O 7 (OH) and Nb 2 O 5 Photoelectrodes

Nb 3 O 7 (OH) and Nb 2 O 5 nanostructures are promising alternative materials to conventionally used oxides, e.g. TiO 2 , in the field of photoelectrodes in dye-sensitized solar cells and photoelectrochemical cells. Despite this important future application, some of their central electronic properties such as the density of states, band gap, and dielectric function are not well understood. In this work, we present combined theoretical and experimental studies on Nb 3 O 7 (OH) and H-Nb 2 O 5 to elucidate their spectroscopic, electronic, and transport properties. The theoretical results were obtained within the framework of density functional theory based on the full potential linearized augmented plane wave method. In particular, we show that the position of the H atom in Nb 3 O 7 (OH) has an important effect on its electronic properties. To verify theoretical predictions, we measured electron energy-loss spectra (EELS) in the low loss region, as well as, the O-K and Nb-M 3 element-specific edges. These results are compared with corresponding theoretical EELS calculations and are discussed in detail. In addition, our calculations of thermoelectric conductivity show that Nb 3 O 7 (OH) has more suitable optoelectronic and transport properties for photochemical application than the calcined H-Nb 2 O 5 phase.

14 SOLAR ENERGY↗
DOE OSTI2025

Deuteration Effects on the Physical and Optoelectronic Properties of Donor–Acceptor Conjugated Polymers

The significant differences in scattering cross sections between deuterium and protium are unique to neutron scattering techniques and have been a long-standing area of interest within the neutron scattering community. Researchers have explored selective deuteration to manipulate scattering contrast in soft matter systems, leading to the widespread use of deuterium labeling in materials development. As deuteration changes the atomic mass, it alters physical properties such as molecular volume, polarizability, and polarity, which in turn may affect noncovalent interactions and crystal ordering. Despite previous studies, there remains a limited understanding of how deuteration impacts donor–acceptor (DA) conjugated polymers. To address this, we synthesized deuterated DPP polymers and systematically investigated the effects of side-chain deuteration on their thermal stability, crystal packing, morphology, and optoelectronic properties. We found that deuteration increased the melting and crystallization temperatures of DPP polymers, although it did not significantly alter their morphology, molecular packing, or charge mobility. These properties were assessed by using atomic force microscopy (AFM), X-ray scattering, and thin-film transistor device measurements, respectively, for DPP polymers. Our work shows that deuterium labeling could be a powerful method for controlling scattering length density, enabling neutrons to study the structure and dynamics of conjugated polymers without impacting their electronic performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Higashitarumizu, Naoki↗
DOE OSTI2016

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. Here, we interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Cofacial Versus Coplanar Arrangement in Centrosymmetric Packing Dimers of Dipolar Small Molecules: Structural Effects on the Crystallization Behaviors and Optoelectronic Characteristics

Two D-π–A-A molecules ( MIDTP and TIDTP ) composed of an electron-rich ditolylamino group (D) and an electron-deficient 5-dicyanovinylenylpyrimidine (A-A) fragment bridged together with indeno[1,2- b ]thiophene (IDT) were synthesized. These molecules provide an opportunity to examine in-depth the impact of side-chain variations (methyl vs p -tolyl) on the crystallization behaviors, solid-state morphology, physical properties, and optoelectronic characteristics relevant for practical applications. X-ray analyses on single-crystal structures indicate that methyl-substituted MIDTP forms “coplanar antiparallel dimers” via C–H···S interactions and organizes into an ordered slip-staircase arrays. In contrast, p -tolyl-bearing TIDTP shows “cofacial centrosymmetric dimers” via π–π interactions and packs into a less-ordered layered structures. The X-ray diffraction analyses upon thermal treatment are consistent with a superior crystallinity of MIDTP , as compared to that of TIDTP . This difference indicates a greater propensity to organization by introduction of the smaller methyl group versus the bulkier p -tolyl group. The increased propensity for order by MIDTP facilitates the crystallization of MIDTP in both solution-processed and vacuum-deposited thin films. MIDTP forms solution-processed single-crystal arrays that deliver OFET hole mobility of 6.56 × 10 –4 cm 2 V –1 s –1 , whereas TIDTP only forms amorhpous films that gave lower hole mobility of 1.34 × 10 –5 cm 2 V –1 s –1 . MIDTP and TIDTP were utilized to serve as donors together with C 70 as acceptor in the fabrication of small-molecule organic solar cells (SMOSCs) with planar heterojunction (PHJ) or planar-mixed heterojunction (PMHJ) device architectures. OPV devices based on higher crystalline MIDTP delivered power conversion efficiencies (PCEs) of 2.5% and 4.3% for PHJ and PMHJ device, respectively, which are higher than those of TIDTP -based cells. Finally, the improved PCEs of MIDTP -based devices are attributed to better hole-transport character.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Highly Stable Transparent Conductive Electrodes Based on Silver–Platinum Alloy-walled Hollow Nanowires for Optoelectronic Devices

In industrial manufacturing, alloying can contribute to the passivation of active metals and markedly improve their corrosion resistance. This inspires us to solve the current critical problem of Ag nanowires (Ag NWs) that have poor stability against chemical and electrochemical corrosion. These problems have seriously limited the applications of Ag NWs in optoelectronic devices where they are used for transparent conductive electrodes. Here, a kind of transparent conductive electrode based on Ag@Pt alloy-walled hollow nanowires (Ag@Pt AHNWs) is successfully fabricated by introducing 12 mol% Pt into long Ag NWs to form Ag@Pt alloy. The as-synthesized electrodes exhibit better optical transmittance (82% at the wavelengthof 550 nm) under high electrical conductivity (28.73 O/sq), high thermal stability up to 400 oC for 11 h, remarkable mechanical flexibility (remaining stable after 5000 cycles bending), as well as high resistance against chemical and electrochemical corrosion. The Ag@Pt AHNWs electrodes are further applied in primary bifunctional polyaniline electrochemical device, and the device shows promising flexibility, noticeable multicolor performances and the high specific capacitance due to the remarkable mechanical flexibility and electrochemical stability of Ag@Pt AHNWs. This work will provide an optional approach for the preparation of other metal nanomaterials electrode with high stability.

Zhou, Kailin↗
DOE OSTI2019

Plasma-Enhanced Atomic Layer Deposition of TiAlN: Compositional and Optoelectronic Tunability

Titanium nitride (TiN) is a unique refractory plasmonic material, the nanocomposites and alloys of which provide further opportunities to tailor its optical and photonic properties. We prepare TiAlN films of continuously variable compositions through the systematic variation of TiN versus AlN cycle ratio in plasma-enhanced atomic layer deposition (PEALD) and investigate the resulting thin-film composition, crystallinity, and optical properties. The resulting properties of TiAIN films are not simple linear combinations of the TiN and AlN films, which exhibit distinct metallic and dielectric properties, but instead are dramatically influenced by the local chemical environment of neighboring constituents. In situ spectroscopic ellipsometry further enables measurement of the varying optical properties of TiAlN films, which evolve over 10 s of nm of film thickness. The tunable optoelectronic properties of TiAlN films enable durable coatings of variable electrical resistance as well as high-temperature diffusion barriers and optical coatings with application to selective solar absorbers and emitters.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Photocarrier Dynamics in TlGaS 2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS 2 Nanoflakes: Implications for Optoelectronic Applications

We present an experimental investigation on photocarrier dynamics in a TlGaS 2 bulk crystal and its heterostructures with hexagonal BN and WS 2 . The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS 2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS 2 at room temperature. In the hexagonal-BN-TlGaS 2 heterostructure, the photocarrier dynamics was similar to that in TlGaS 2 , indicating the type-I band alignment of this structure with both band extremes located in TlGaS 2 . In the monolayer WS 2 -TlGaS 2 heterostructure, we observed charge transfer from TlGaS 2 to WS 2 and an extended lifetime of the transferred carriers in WS 2 . Here, these results introduce TlGaS 2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Size- and Phase-Controlled Nanometer-Thick ß-Ga2O3 Films with Green Photoluminescence for Optoelectronic Applications

Realization and optimization of the tunable/enhanced optical properties is critical to further advance the field of optoelectronics, photonics, and nano-electronics. In this context, here, we demonstrate green-emission characteristics with a ~30 fold enhancement in selectively engineered nanocrystalline Ga2O3 with a control over size, phase and interface nanostructure. Pulsed-laser-deposited ß-phase Ga2O3 films with an average crystallite size of ~9 nm along with a highly dense, close-compact nano-columnar structure with lowest possible defect density facilitates the thirty-fold enhancement in the photoluminescence (PL) intensity in green-region. Enhanced PL-emission in the optimized, engineered nano-architecture sheds light in designing Ga2O3-materials for promising future optoelectronic/photocatalytic applications.

Ga2O3, Nanocrystalline Films, Pulsed-Laser Deposit↗