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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Experimental evidence for pressure-induced first order transition in cerium nitride from B1 to B10 structure type

Here, the crystal structure of CeN was investigated up to pressures of 82 GPa, using diamond anvil cell powder X-ray diffraction in two experiments with He and Si-oil as the pressure transmitting media. In contrast to previous reports, we do not observe the B2 (CsCl type) structure at high pressure. Instead, the structural phase transition, starting at 65 GPa, from the ambient rock salt B1 structure results in a distorted CsCl-like B10 structure, irrespective of the pressure medium. Our result unambiguously confirms two recent density functional theory (DFT) studies predicting the B10 phase to be stable at these pressures, rather than the B2 (CsCl type) phase previously reported. The B10 structure appears to approach the B2 structure as pressure is increased further, but DFT calculations indicate that an L1 0 structure (AuCu type) is energetically favored

36 MATERIALS SCIENCE↗
DOE OSTI2018

LDRD 191204: Optimization of Sputtered Aluminum Nitride for the Seeding of Metal Organic Chemical Vapor Deposition Gallium Nitride Films

GaN-on-Si combines the wide bandgap advantages of GaN with the cost and scaling advantages of Si. Sputtered A1N is an attractive nucleation layer material because it reduces Al diffusion into the Si and eliminates a time-intensive preconditioning step in the GaN growth process, but is limited by the poor film quality of PVD A1N films deposited on Si substrates. Sputtering also offers a large degree of control over A1N film properties, including control of the intrinsic stress using substrate biasing. Doping the A1N films with Sc improves the lattice match to A1GaN and GaN films by expanding the a-axis and c-axis lattice parameters. A1N and A1 0.88 Sc 0.12 N films have been grown on silicon, metal, and sapphire substrates and characterized for properties such as stress, grain size, roughness, and film orientation for use as nucleation layers for MOCVD GaN growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1989

Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

Mieskowski, Diane M.↗
DOE OSTI2022

Effect of nitriding on mechanical and microstructural properties of Direct Metal Laser Sintered 17-4PH stainless steel

In this work, the effect of the nitriding process on microstructure and mechanical properties of additively manufactured (AM) 17-4PH stainless steel is investigated. The nitriding was performed at 530 °C, 560 °C, and 580 °C for 2 h. The nitriding process improves the hardness and surface roughness of the AM 17-4PH steel. Detailed microstructural characterizations of both as-built and nitride samples are performed using an optical microscope, scanning electron microscope (SEM) equipped with energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction technique. It reveals that the nitride layer thickness increases with nitriding temperature. A distinct transition layer between the substrate and nitride layer is observed in the 560 °C and 580 °C nitride samples. The nitriding process develops almost equiaxed grain microstructure with new secondary phase precipitates, whereas in the as-built material, the grains are primarily columnar along the AM process build direction. Specifically, the nitriding process introduces γ-Fe4N, ε-Fe3N, CrN, and Ni3N precipitates. The increase in Ni- and Cu-rich precipitates with the nitriding temperature explains the observed improvement in the hardness and surface roughness. Furthermore, the nitriding process does not alter the substrate's initial weak crystallographic texture.

17-4PH steel↗