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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

The next generation microwave sounder for weather satellites

Microwave sounders are multichannel microwave radiometers for measuring atmospheric temperature (or humidity) profiles. These devices are also known as microwave spectrometers because a sounder typically has a number of channels measuring the spectral shape of an absorption line. Each channel of the sounder responds essentially to a given layer of the atmosphere. The characteristics of currently employed microwave sounders on satellites are briefly examined, and new features expected in connection with the introduction of the next generation sounders are discussed. There will probably be an increase in the number of oxygen channels with the objective to extend the weighting function height coverage into the stratosphere and to improve the temperature retrieval accuracy. Other features are to be related to better surface resolution, auxiliary channels, and water vapor sounding.

Shiue, J. C.↗
NASA NTRS1975

Reception-Conversion Subsystem (RXCV) for microwave power transmission system

As part of a program to demonstrate the feasibility of power transmission from space, an approximately 25 sq m Reception-Conversion Subsystem was designed and tested. The device collects high power microwave energy, converts it into dc, and dissipates it in an instrumented demonstration load.

Raytheon Company↗
NASA NTRS1986

Conceptual design of high power Ka-band radar transmitter

A proposed conceptual design of a 400-kW CW Ka-band transmitter and associated microwave components to be used for planetary radar and serve as a prototype for future spacecraft uplinks is discussed. System requirements for such a transmitter are presented. Performance of the proposed high-power millimeter-wave tube, the gyroklystron, is discussed. Parameters of the proposed power amplifier, beam supply, and monitor and control devices are also presented. Microwave transmission-line components consisting of signal-monitoring devices, mode converter, and an overmoded corrugated feed are discussed. Finally, an assessment of the state-of-the-art technology to meet the system requirements is given, and possible areas of difficulty are summarized.

Bhanji, Alaudin↗
NASA NTRS1970

Array phasing device Patent

Apparatus for generating microwave signals at progressively related phase angles for driving antenna array

Carson, P. R.↗
NASA NTRS2002

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

VanKeuls, F. W.↗
NASA NTRS2003

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x),TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3 have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO, by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 degree phase shift with 53 V/micron dc bias and a figure of merit of 47 degree/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 degrees. The best FWHM of these MOCLD BST films has been measured to be 0.058 degrees.

VanKeuls, F. W.↗
NASA NTRS2019

Microwave SQUID Multiplexing for the Lynx X-Ray Microcalorimeter

The Lynx x-ray microcalorimeter (LXM) is an imaging spectrometer for the Lynx satellite mission, an x-ray telescope being considered by NASA to be a new flagship mission. Lynx will enable unique astrophysical observations into the x-ray universe due to its high angular resolution and large field of view. The LXM consists of an array of over 100,000 pixels and poses a significant technological challenge to achieve the high degree of multiplexing required to read out these sensors. We discuss the details of microwave superconducting quantum interference device (SQUID) multiplexing and describe why it is ideally suited to the needs of the LXM. This case is made by summarizing the current and predicted performance of microwave SQUID multiplexing and describing the steps needed to optimize designs for all the LXM arrays. Finally, we describe our plan to advance the technology readiness level (TRL) of microwave SQUID multiplexing of the LXM microcalorimeters to TRL-5 by 2024.

Bennett, Douglas A.↗
NASA NTRS2007

High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube

The L-3 Communications Model 999H traveling-wave tube (TWT) has been demonstrated to generate an output power of 144 W at 60-percent overall efficiency in continuous-wave operation over the frequency band from 31.8 to 32.3 GHz. The best TWT heretofore commercially available for operation in the affected frequency band is characterized by an output power of only 35 W and an efficiency of 50 percent. Moreover, whereas prior TWTs are limited to single output power levels, it has been shown that the output power of the Model 999H can be varied from 54 to 144 W. A TWT is a vacuum electronic device used to amplify microwave signals. TWTs are typically used in free-space communication systems because they are capable of operating at power and efficiency levels significantly higher than those of solid-state devices. In a TWT, an electron beam is generated by an electron gun consisting of a cathode, focusing electrodes, and an anode. The electrons pass through a hole in the anode and are focused into a cylindrical beam by a stack of periodic permanent magnets and travel along the axis of an electrically conductive helix, along which propagates an electromagnetic wave that has been launched by an input signal that is to be amplified. The beam travels within the helix at a velocity close to the phase velocity of the electromagnetic wave. The electromagnetic field decelerates some of the electrons and accelerates others, causing the beam to become formed into electron bunches, which further interact with the electromagnetic wave in such a manner as to surrender kinetic energy to the wave, thereby amplifying the wave. The net result is to amplify the input signal by a factor of about 100,000. After the electrons have passed along the helix, they impinge on electrodes in a collector. The collector decelerates the electrons in such a manner as to recover most of the remaining kinetic energy and thereby significantly increase the power efficiency of the TWT.

Krawczyk, Richard↗
NASA NTRS2000

Microwave powered sterile access port

A device and method for elimination of contamination during transfer of materials either into or from bioreactors, food containers, or other microbially vulnerable systems. Using microwave power, thermal sterilizations of mating fixtures are achieved simply, reliably, and quickly by the volatilization of small quantities of water to produce superheated steam which contacts all exposed surfaces.

Sauer, Richard L.↗
NASA NTRS1977

Temperature reference for microwave radiometer calibration

New temperature reference avoids need to physically remove antenna and replace it with calibrating termination. Device is piece of porous microwave absorber fitted with cap of nonporous plastic foam. Absorbent material is soaked with cryogen. Procedure ensures that temperature at which microwaves are absorbed is exactly that of cryogen.

Love, A. W.↗
NASA NTRS2007

Large-Area Permanent-Magnet ECR Plasma Source

A 40-cm-diameter plasma device has been developed as a source of ions for material-processing and ion-thruster applications. Like the device described in the immediately preceding article, this device utilizes electron cyclotron resonance (ECR) excited by microwave power in a magnetic field to generate a plasma in an electrodeless (noncontact) manner and without need for an electrically insulating, microwave-transmissive window at the source. Hence, this device offers the same advantages of electrodeless, windowless design - low contamination and long operational life. The device generates a uniform, high-density plasma capable of sustaining uniform ion-current densities at its exit plane while operating at low pressure [<10(exp -4) torr (less than about 1.3 10(exp -2) Pa)] and input power <200 W at a frequency of 2.45 GHz. Though the prototype model operates at 2.45 GHz, operation at higher frequencies can be achieved by straightforward modification to the input microwave waveguide. Higher frequency operation may be desirable in those applications that require even higher background plasma densities. In the design of this ECR plasma source, there are no cumbersome, power-hungry electromagnets. The magnetic field in this device is generated by a permanent-magnet circuit that is optimized to generate resonance surfaces. The microwave power is injected on the centerline of the device. The resulting discharge plasma jumps into a "high mode" when the input power rises above 150 W. This mode is associated with elevated plasma density and high uniformity. The large area and uniformity of the plasma and the low operating pressure are well suited for such material-processing applications as etching and deposition on large silicon wafers. The high exit-plane ion-current density makes it possible to attain a high rate of etching or deposition. The plasma potential is <3 V low enough that there is little likelihood of sputtering, which, in plasma processing, is undesired because it is associated with erosion and contamination. The electron temperature is low and does not vary appreciably with power.

Foster, John E.↗
NASA NTRS2002

Cryogenetically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗
NASA NTRS2002

Cryogenically Cooled Field Effect Transistors for Low-Noise Systems

Recent tends in the design, fabrication and use of High-Electron-Mobility-Transistors (HEMT) in low noise amplifiers are reviewed. Systems employing these devices have achieved the lowest system noise for wavelengths greater than three millimeters with relatively modest cryogenic cooling requirements in a variety of ground and space based applications. System requirements which arise in employing such devices in imaging applications are contrasted with other leading coherent detector candidates at microwave wavelengths. Fundamental and practical limitations which arise in the context of microwave application of field effect devices at cryogenic temperatures will be discussed from a component and systems point of view.

Wollack, Edward J.↗
NASA NTRS1988

RF Testing Of Microwave Integrated Circuits

Fixtures and techniques are undergoing development. Four test fixtures and two advanced techniques developed in continuing efforts to improve RF characterization of MMIC's. Finline/waveguide test fixture developed to test submodules of 30-GHz monolithic receiver. Universal commercially-manufactured coaxial test fixture modified to enable characterization of various microwave solid-state devices in frequency range of 26.5 to 40 GHz. Probe/waveguide fixture is compact, simple, and designed for non destructive testing of large number of MMIC's. Nondestructive-testing fixture includes cosine-tapered ridge, to match impedance wavequide to microstrip. Advanced technique is microwave-wafer probing. Second advanced technique is electro-optical sampling.

Romanofsky, R. R.↗
NASA NTRS2000

High-Q Microsphere Cavity for Laser Stabilization and Optoelectronic Microwave Oscillator

With submillimeter size and optical Q up to approximately 10 (exp 10), microspheres with whispering-gallery (WG) modes are attractive new component for fiber-optics/photonics applications and a potential core in ultra-compact high-spectral-purity optical and microwave oscillators. In addition to earlier demonstrated optical locking of diode laser to WG mode in a microsphere, we report on microsphere application in the microwave optoelectronic oscillator, OEO. In OEO, a steady-state microwave modulation of optical carrier is obtained in a closed loop including electro-optical modulator, fiber-optic delay, detector and microwave amplifier. OEO demonstrates exceptionally low phase noise (-140 dBc/Hz at l0kHz from approximately 10GHz carrier) with a fiber length approximately 2km. Current technology allows to put all parts of the OEO, except the fiber, on the same chip. Microspheres, with their demonstrated Q equivalent to a kilometer fiber storage, can replace fiber delays in a truly integrated device. We have obtained microwave oscillation in microsphere-based OEO at 5 to 18 GHz, with 1310nm and 1550nm optical carrier, in two configurations: 1) with external DFB pump laser, and 2) with a ring laser including microsphere and a fiber optic amplifier. Also reported is a simple and efficient fiber coupler for microspheres facilitating their integration with existing fiber optics devices.

Ilchenko, Vladimir S.↗
NASA NTRS2007

Slot-Antenna/Permanent-Magnet Device for Generating Plasma

A device that includes a rectangular-waveguide/slot-antenna structure and permanent magnets has been devised as a means of generating a substantially uniform plasma over a relatively large area, using relatively low input power and a low gas flow rate. The device utilizes electron cyclotron resonance (ECR) excited by microwave power to efficiently generate plasma in a manner that is completely electrodeless in the sense that, in principle, there is no electrical contact between the plasma and the antenna. Plasmas generated by devices like this one are suitable for use as sources of ions and/or electrons for diverse material-processing applications (e.g., etching or deposition) and for ion thrusters. The absence of plasma/electrode contact essentially prevents plasma-induced erosion of the antenna, thereby also helping to minimize contamination of the plasma and of objects exposed to the plasma. Consequently, the operational lifetime of the rectangular-waveguide/ slot-antenna structure is long and the lifetime of the plasma source is limited by the lifetime of the associated charged-particle-extraction grid (if used) or the lifetime of the microwave power source. The device includes a series of matched radiating slot pairs that are distributed along the length of a plasma-source discharge chamber (see figure). This arrangement enables the production of plasma in a distributed fashion, thereby giving rise to a uniform plasma profile. A uniform plasma profile is necessary for uniformity in any electron- or ion-extraction electrostatic optics. The slotted configuration of the waveguide/ antenna structure makes the device scalable to larger areas and higher powers. All that is needed for scaling up is the attachment of additional matched radiating slots along the length of the discharge chamber. If it is desired to make the power per slot remain constant in scaling up, then the input microwave power must be increased accordingly. Unlike in prior ECR microwave plasma-generating devices, there is no need for an insulating window on the antenna. Such windows are sources of contamination and gradually become ineffective as they become coated with erosion products over time. These characteristics relegate prior ECR microwave plasma-generating devices to non-ion beam, non-deposition plasma applications. In contrast, the lack of need for an insulating window in the present device makes it possible to use the device in both ion-beam (including deposition) and electron-beam applications. The device is designed so that ECR takes place above each slot and the gradient of the magnetic field at each slot is enough to prevent backflow of plasma.

Foster, John E.↗
NASA NTRS1990

Emerging applications of high temperature superconductors for space communications

Proposed space missions require longevity of communications system components, high input power levels, and high speed digital logic devices. The complexity of these missions calls for a high data bandwidth capacity. Incorporation of high temperature superconducting (HTS) thin films into some of these communications system components may provide a means of meeting these requirements. Space applications of superconducting technology has previously been limited by the requirement of cooling to near liquid helium temperatures. Development of HTS materials with transition temperatures above 77 K along with the natural cooling ability of space suggest that space applications may lead the way in the applications of high temperature superconductivity. In order for HTS materials to be incorporated into microwave and millimeter wave devices, the material properties such as electrical conductivity, current density, surface resistivity and others as a function of temperature and frequency must be well characterized and understood. The millimeter wave conductivity and surface resistivity were well characterized, and at 77 K are better than copper. Basic microwave circuits such as ring resonators were used to determine transmission line losses. Higher Q values than those of gold resonator circuits were observed below the transition temperature. Several key HTS circuits including filters, oscillators, phase shifters and phased array antenna feeds are feasible in the near future. For technology to improve further, good quality, large area films must be reproducibly grown on low dielectric constant, low loss microwave substrates.

Heinen, Vernon O.↗
NASA NTRS2002

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗