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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Microwave characteristics of GaAs MMIC integratable optical detectors

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Claspy, Paul C.↗
NASA NTRS2003

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗
NASA NTRS2001

HAMSR - The High Altitude MMIC Sounding Radiometer

WAMSR is a millimeter wave atmospheric temperature and humidity sounder that utilizes state of the art technology to enable substantial reductions in size and mass while at the same time achieve improved measurement sensitivity and accuracy. It is the first such instrument to use receivers based entirely on newly developed monolithic microwave integrated circuit technology. Sponsored by the NASA Instrument Incubator Program, HAMSR has been under development for the past 2 112 years. The first science mission takes place in Florida this summer, where HAMSR is deployed on the NASA ER-2 during the CAMEX-4 hurricane field campaign and will provide core atmospheric soundings to a number of investigators. HAMSR represents the next generation of microwave sounders.

remote sensing↗
NASA NTRS2003

120-GHz HEMT Oscillator With Surface-Wave-Assisted Antenna

Two monolithic microwave integrated circuits (MMICs) have been designed and built to function together as a source of electromagnetic radiation at a frequency of 120 GHz. One of the MMICs is an oscillator and is the highest-power 120-GHz oscillator reported thus far in the literature. The other MMIC is an end-fire antenna that radiates the oscillator signal. Although these MMICs were constructed as separate units and electrically connected with wire bonds, future oscillator/ antenna combinations could readily be fabricated as monolithic integrated units. Such units could be used as relatively high-power solid-state microwave sources in diverse applications that include automotive radar, imaging, scientific instrumentation, communications, and radio astronomy. As such, these units would be attractive alternatives to vacuum-tube oscillators, which are still used to obtain acceptably high power in the frequency range of interest. The oscillator (see figure) includes a high-electron-mobility transistor (HEMT), with gate-periphery dimensions of 4 by 37 m, in a common-source configuration. The series feedback element of the oscillator is a grounded coplanar waveguide (CPW) at the source. The HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle) to maximize the output power of the oscillator. Input and output impedance-matching circuit elements are designed to maximize output power and to establish the conditions needed for oscillation. The design of the antenna takes advantage of surface waves, which, heretofore, have been regarded as highly disadvantageous because they can leak power and degrade the performances of antennas that have not been designed to exploit them. Measures taken to suppress surface waves have included complex machining of circuit substrates and addition of separate substrates. These measures are difficult to implement in standard MMIC fabrication processes. In contrast, because the design of the present antenna eliminates the need to suppress surface waves, the fabrication of the antenna is fully compatible with standard MMIC fabrication processes.

Samoska, Lorene↗
NASA NTRS2004

Reproducible Growth of High-Quality Cubic-SiC Layers

Semiconductor electronic devices and circuits based on silicon carbide (SiC) are being developed for use in high-temperature, high-power, and/or high-radiation conditions under which devices made from conventional semiconductors cannot adequately perform. The ability of SiC-based devices to function under such extreme conditions is expected to enable significant improvements in a variety of applications and systems. These include greatly improved high-voltage switching for saving energy in public electric power distribution and electric motor drives; more powerful microwave electronic circuits for radar and communications; and sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1996

ACTS Aeronautical Terminal Experiment System Description and Link Analysis

During the summer of 1994, the performance of an experimental mobile satellite communication system was demonstrated to industry and government representatives by the NASA Lewis Research Center (LeRC) and the Jet Propulsion Laboratory (JPL). The system was based on the advanced communications technology satellite (ACTS) and consisted of a K-/Ka-band active monolithic microwave integrated circuit (MMIC) phased array antenna system, ACTS mobile terminal (AMT) and link evaluation terminal (LET). A LeRC research aircraft, Learjet model 25, was outfitted with the active MMIC phased array antenna system and AMT and served as the experimental 20/30 Ghz aeronautical terminal. The LET at LeRC in Cleveland, OH, was interfaced with portions of fixed-AMT equipment and together provided the gateway station functions including ACTS interface and public service telephone network (PSTN) interface. The ACTS was operated in its microwave switch matrix (MSM) mode with a spot beam for the Learjet and another spot beam dedicated to the LET. The Learjet was flown over several major cities across the US and demonstrated the feasibility of a full-duplex compressed voice links for an aeronautical terminal through the 20/30 Ghz ACTS channel. This paper presents a technical description of the system including the MMIC phased array antenna system, AMT, Learjet, LET, and ACTS. The array antenna system consists of a 30 Ghz transmit array (LeRc/Texas Instruments) and two 20 Ghz receive arrays (USAF Rome Lab., Boeing, and Martin Marietta), each one very small with sufficient performance for a satellite voice link. The AMT consists of 2.4/4.8/9.6 Kbps voice coder/decoder, modem, PSTN interface and RF/IF converters. Link analysis is presented and compared to the actual performance data collected during the demonstration flights.

Sohn, Philip↗
NASA NTRS2009

Three MMIC Amplifiers for the 120-to-200 GHz Frequency Band

Closely following the development reported in the immediately preceding article, three new monolithic microwave integrated circuit (MMIC) amplifiers that would operate in the 120-to-200-GHz frequency band have been designed and are under construction at this writing. The active devices in these amplifiers are InP high-electron-mobility transistors (HEMTs). These amplifiers (see figure) are denoted the LSLNA150, the LSA200, and the LSA185, respectively. Like the amplifiers reported in the immediately preceding article, the LSLNA150 (1) is intended to be a prototype of low-noise amplifiers (LNAs) to be incorporated into spaceborne instruments for sensing cosmic microwave background radiation and (2) has potential for terrestrial use in electronic test equipment, passive millimeter-wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The HEMTs in this amplifier were fabricated according to 0.08- m design rules of a commercial product line of InP HEMT MMICs at HRL Laboratories, LLC, with a gate geometry of 2 fingers, each 15 m wide. On the basis of computational simulations, this amplifier is designed to afford at least 15 dB of gain, with a noise figure of no more than about 6 dB, at frequencies from 120 to 160 GHz. The measured results of the amplifier are shown next to the chip photo, with a gain of 16 dB at 150 GHz. Noise figure work is ongoing. The LSA200 and the LSA185 are intended to be prototypes of transmitting power amplifiers for use at frequencies between about 180 and about 200 GHz. These amplifiers have also been fabricated according to rules of the aforesaid commercial product line of InP HEMT MMICs, except that the HEMTs in these amplifiers are characterized by a gate geometry of 4 fingers, each 37 m wide. The measured peak performance of the LSA200 is characterized by a gain of about 1.4 dB at a frequency of 190 GHz; the measured peak performance of the LSA185 is characterized by a gain of about 2.7 dB at a frequency of 181 GHz. The measured gain results of each chip are shown next to their respective photos.

Samoska, Lorene↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
NASA NTRS1995

ACTS Aeronautical Terminal Experiment (AERO-X)

During the summer of 1994, the performance of an experimental mobile satellite communication system was demonstrated. Using the Advanced Communications Technology Satellite (ACTS) and the ACTS Mobile Terminal (AMT), the system demonstrated an active Monolithic Microwave Integrated Circuit (MMIC) phased-array antenna system. The antenna system was installed onboard one of NASA Lewis Research Center's research aircraft, a Learjet Model 25. It proved the viability of in-flight satellite communications services via small, flush, mountable electronic phased-array antennas. The overall system setup for the ACTS Aeronautical Terminal Experiment (AERO-X) is illustrated. The Link Evaluation Terminal (LET) at Lewis in Cleveland, Ohio, interfaced with fixed-AMT equipment, providing a seamless connection with the Public Service Telephone Network. As the Learjet was flown over several major cities across the U.S., this demonstration system allowed passengers onboard to make telephone calls as if they were using a cellular system. ACTS was operated in its microwave switch matrix mode with a spot beam for the Learjet and another spot beam dedicated to the LET.

Source record↗
NASA NTRS2010

Differential Resonant Ring YIG Tuned Oscillator

A differential SiGe oscillator circuit uses a resonant ring-oscillator topology in order to electronically tune the oscillator over multi-octave bandwidths. The oscillator s tuning is extremely linear, because the oscillator s frequency depends on the magnetic tuning of a YIG sphere, whose resonant frequency is equal to a fundamental constant times the DC magnetic field. This extremely simple circuit topology uses two coupling loops connecting a differential pair of SiGe bipolar transistors into a feedback configuration using a YIG tuned filter creating a closed-loop ring oscillator. SiGe device technology is used for this oscillator in order to keep the transistor s 1/f noise to an absolute minimum in order to achieve minimum RF phase noise. The single-end resonant ring oscillator currently has an advantage in fewer parts, but when the oscillation frequency is greater than 16 GHz, the package s parasitic behavior couples energy to the sphere and causes holes and poor phase noise performance. This is because the coupling to the YIG is extremely low, so that the oscillator operates at near the unloaded Q. With the differential resonant ring oscillator, the oscillation currents are just in the YIG coupling mechanisms. The phase noise is even better, and the physical size can be reduced to permit monolithic microwave integrated circuit oscillators. This invention is a YIG tuned oscillator circuit making use of a differential topology to simultaneously achieve an extremely broadband electronic tuning range and ultra-low phase noise. As a natural result of its differential circuit topology, all reactive elements, such as tuning stubs, which limit tuning bandwidth by contributing excessive open loop phase shift, have been eliminated. The differential oscillator s open-loop phase shift is associated with completely non-dispersive circuit elements such as the physical angle of the coupling loops, a differential loop crossover, and the high-frequency phase shift of the n-p-n transistors. At the input of the oscillator s feedback loop is a pair of differentially connected n-p-n SiGe transistors that provides extremely high gain, and because they are bulk-effect devices, extremely low 1/f noise (leading to ultralow RF phase noise). The 1/f corner frequency for n-p-n SiGe transistors is approximately 500 Hz. The RF energy from the transistor s collector output is connected directly to the top-coupling loop (the excitation loop) of a single-sphere YIG tuned filter. A uniform magnetic field to bias the YIG must be at a right angle to any vector associated with an RF current in a coupling loop in order for the precession to interact with the RF currents.

Parrott, Ronald A.↗
NASA NTRS1991

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Lubecke, Victor M.↗
NASA NTRS1972

Development of a satellite microwave radiometer to sense the surface temperature of the world oceans

A proposed S-band radiometer for determining the ocean surface temperature with an absolute accuracy of + or - 1 Kelvin and a resolution of + or - .1 Kelvin was placed under the Advanced Applications Flight Experiment for further development into Nimbus readiness state. The results of assessing the following are described: effects due to the state of the sea surface, effects caused by the intervening atmosphere, and effects associated with imperfections in the instrument itself. An extensive sea truth program is also described for correlation of aircraft test flight measurements or of satellite remote measurement to in-situ data. An improved radiometer design is a modified Dicke-switch type with temperature stabilized, microwave integrated circuit, front-end and with a pulsed injection-noise nulling system. The radiometer has a multimode rectangular horn antenna with very low ohmic losses and a beam efficiency of 98% or better.

Hidy, G. M.↗
NASA NTRS1972

A wideband 12 GHz down converter

The design, fabrication, and evaluation of a single ended 12 GHz down-converter suitable for use in a low cost satellite ground terminal is described. The mixer uses waveguide, coaxial and MIC (microwave integrated circuit) transmission line components. Theoretical and experimental analyses of several microstrip circuit elements are presented including the traveling wave-directional filter, quarter wave-length proximity directional coupler, low pass filter and the quarterwave band stop filter. The optimum performance achieved for the mixer using a packaged diode was 9.4 db conversion loss and a bandwidth of 275 MHz.

Newman, B. A.↗
NASA NTRS1978

S-Band complex-weight module for adaptive processing

S-band complex weight for adaptive processing is fabricated as microwave integrated circuit. When interfaced with suitable control component, it is potentially capable of producing 25 dB rejection of interface with bandwidth of 500 MHz. Performance inproves with decreased bandwidth. Versatility stems from numerous control methods available in broadening field of adaptive processing.

Gianatasio, A. J.↗
NASA NTRS1980

Proposed Josephson voltage standard

Relatively-simple microwave integrated circuit comprising two resonators linked by Josephson junction could be set up to generate standard Josephson volt in any industrial laboratory. Standard cells and electronic equipment could be readily compared and calibrated to this standard.

Chang, C. C.↗
NASA NTRS1984

Determining the Nonlinearity of Microwave Receivers

Nonlinearity of microwave receiver measured and automatically corrected for by noise-adding radiometer built into microwave receiving circuit. Radiometer includes noise-adding diode, turned on and off by computer controlled processor.

Stelzried, C. T.↗
NASA NTRS1982

Application of MMIC modules in future multiple beam satellite antenna systems

Multiple beam antenna systems for advanced communication satellites operating in the 30/20 GHz frequency bands (30 GHz uplink, 20 GHz downlink) were developed. Up to twenty 0.3 deg HPBW fixed spot beams and six 0.3 deg HPBW scanning spot beams will be required. Array-fed dual reflector antenna systems in which monolithic microwave integrated circuit (MMIC) phase shift and amplifier modules are used with each radiating element of the feed array for beam pointing and power gain were developed. The feasibility of distributed power amplification and beam pointing with MMIC modules in the elements of an array and to develop a data base for future development were demonstrated. The technical discussion centers around the potential advantages of ""monolithic'' antennas for specific applications as compared to systems using high powered TWT's. These include: reduced losses in the beam forming network; advantage of space combining and graceful degradation; dynamic control of beam pointing and illumination contour; and possibilities for cost and weight reduction.

Smetana, J.↗