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NASA NTRS2011

High Frequency PIN-Diode Switches for Radiometer Applications

Internally calibrated radiometers are needed for ocean topography and other missions. Typically internal calibration is achieved with Dicke switching as one of the techniques. We have developed high frequency single-pole double-throw (SPDT) switches in the form of monolithic microwave integrated circuits (MMIC) that can be easily integrated into Dicke switched radiometers that utilize microstrip technology. In particular, the switches we developed can be used for a radiometer such as the one proposed for the Surface Water and Ocean Topography (SWOT) Satellite Mission whose three channels at 92, 130, and 166 GHz would allow for wet-tropospheric path delay correction near coastal zones and over land. This feat is not possible with the current Jason-class radiometers due to their lower frequency signal measurement and thus lower resolution. The MMIC chips were fabricated at NGST using their InP PIN diode process and measured at JPL using high frequency test equipment. Measurement and simulation results will be presented.

PIN-diode↗

NASA NTRS2010

Miniature MMIC Low Mass/Power Radiometer Modules for the 180 GHz GeoSTAR Array

We have developed and demonstrated miniature 180 GHz Monolithic Microwave Integrated Circuit (MMIC) radiometer modules that have low noise temperature, low mass and low power consumption. These modules will enable the Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR) of the Precipitation and All-weather Temperature and Humidity (PATH) Mission for atmospheric temperature and humidity profiling. The GeoSTAR instrument has an array of hundreds of receivers. Technology that was developed included Indium Phosphide (InP) MMIC Low Noise Amplifiers (LNAs) and second harmonic MMIC mixers and I-Q mixers, surface mount Multi-Chip Module (MCM) packages at 180 GHz, and interferometric array at 180 GHz. A complete MMIC chip set for the 180 GHz receiver modules (LNAs and I-Q Second harmonic mixer) was developed. The MMIC LNAs had more than 50% lower noise temperature (NT=300K) than previous state-of-art and MMIC I-Q mixers demonstrated low LO power (3 dBm). Two lots of MMIC wafers were processed with very high DC transconductance of up to 2800 mS/mm for the 35 nm gate length devices. Based on these MMICs a 180 GHz Multichip Module was developed that had a factor of 100 lower mass/volume (16x18x4.5 mm3, 3g) than previous generation 180 GHz receivers.

Monolithic Microwave Integrated Circuit (MMIC)↗

NASA NTRS1979

Miniature Ku-Band down converter

Hybrid circuit serves as receiver front end for 13.75- to 14.0-GHz communications and radar systems. Complete microwave integrated circuit (MIC) assembly is packaged in small hermetically welded, nitrogen-filled aluminum case. Simplicity and size proves useful for lower-frequency wideband applications.

Norbury, D. A.↗

NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.

Shalkhauser, K. A.↗

NASA NTRS1992

High-performance packaging for monolithic microwave and millimeter-wave integrated circuits

Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.

Shalkhauser, K. A.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

An external, noncontact electro-optic measurement system, designed to operate at the wafer level with conventional wafer probing equipment and without any special circuit preparation, has been developed. Measurements have demonstrated the system's ability to probe continuous and pulsed signals on microwave integrated circuits on arbitrary substrates with excellent spatial resolution. Experimental measurements on a variety of digital and analog circuits, including a GaAs selectively-doped heterostructure transistor prescaler, an NMOS silicon multiplexer, and a GaAs power amplifier MMIC are reported.

Whitaker, J. F.↗

NASA NTRS1989

External electro-optic probing of millimeter-wave integrated circuits

Whitaker, J. F.↗

NASA NTRS1994

Monolithic Optical-To-Electronic Receiver

Monolithic optoelectronic integrated circuit converts multiplexed digital optical signals into electrical signals, separates, and distributes them to intended destinations. Developed to deliver phase and amplitude commands to monolithic microwave integrated circuits (MMIC's) at elements of millimeter-wave phased-array antenna from single optical fiber driven by external array controller. Also used in distribution of high-data-rate optical communications in local-area networks (LAN's). Notable features include options for optical or electrical clock inputs; outputs for raw data, addresses, and instructions for diagnosis; and optical-signal-detection circuit used to reduce power consumption by 80 percent between data-transmission times. Chip fabricated by processes available at many major semiconductor foundries. Distribution of digital signals in aircraft, automobiles, and ships potential application.

Kunath, Richard↗

NASA NTRS2002

Process for a High Efficiency Class D Microwave Power Amplifier Operating in the S-Band

A process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.

William Herbert Sims, III↗

NASA NTRS2006

Multichannel X-Band Dielectric-Resonator Oscillator

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.

Mysoor, Narayan↗

NASA NTRS1990

Microwave conductivity of laser ablated YBaCuO superconducting films and its relation to microstrip transmission line

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response was studied of laser ablated YBa2Cu3O(7-x)/LaAlO3 thin films as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗

NASA NTRS1991

Microwave conductivity of laser ablated YBa2Cu3O(7-delta) superconducting films and its relation to microstrip transmission line performance

The discovery of high temperature superconductor oxides has raised the possibility of a new class of millimeter and microwave devices operating at temperatures considerably higher than liquid helium temperatures. Therefore, materials properties such as conductivity, current density, and sheet resistance as a function of temperature and frequency, possible anisotropies, moisture absorption, thermal expansion, and others, have to be well characterized and understood. The millimeter wave response of laser ablated YBa2Cu3O(7-delta)/LaAlO3 thin films was studied as a function of temperature and frequency. In particular, the evaluation of their microwave conductivity was emphasized, since knowledge of this parameter provides a basis for the derivation of other relevant properties of these superconducting oxides, and for using them in the fabrication of actual passive circuits. The microwave conductivity for these films was measured at frequencies from 26.5 to 40.0 GHz, in the temperature range from 20 to 300 K. The values of the conductivity are obtained from the millimeter wave power transmitted through the films, using a two fluid model.

Bhasin, K. B.↗

NASA NTRS1994

Optoelectronic Receiver For Communication And Control

Many operational and diagnostic features integrated into circuit chip. GaAs-based integrated circuit designed to serve as optoelectronic interface in phased-array antenna. Intended function to receive digital control signals transmitted on optical fiber and to convert signals to electronic control signals, which then applied to monolithic microwave integrated circuit (MMIC). Also used in reception of high-rate optical digital communications within computers, between computers, and in signal-distribution systems in aircraft, automobiles, and ships. Interface circuit represents significant improvement over preexisting interface circuits in that its clock-signal-recovery subcircuit requires little or no preamble for immediate synchronization.

Kunath, Richard↗

NASA NTRS1989

Optical detectors for GaAs MMIC integration: Technology assessment

Fiber optic links are being considered to transmit digital and analog signals in phased array antenna feed networks in space communications systems. The radiating elements in these arrays will be GaAs monolithic microwave integrated circuits (MMIC's) in numbers ranging from a few hundred to several thousand. If such optical interconnects are to be practical it appears essential that the associated components, including detectors, be monolithically integrated on the same chip as the microwave circuitry. The general issue of monolithic integration of microwave and optoelectronic components is addressed from the point of view of fabrication technology and compatibility. Particular attention is given to the fabrication technology of various types of GaAs optical detectors that are designed to operate at a wavelength of 830 nm.

Claspy, P. C.↗

NASA NTRS1989

Optical detectors for GaAs MMIC integration - Technology assessment

Claspy, P. C.↗

NASA NTRS2010

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Patterson, Richard L.↗

NASA NTRS1989

Microwave characteristics of GaAs MMIC integratable optical detectors

Interdigitated photoconductive detectors were fabricated on microwave device structures, making them easily integratable with Monolithic Microwave Integrated Circuits (MMIC). Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81 were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A small signal model of the detectors based on microwave measurements was also developed.

Claspy, Paul C.↗

NASA NTRS2003

Arrays of Carbon Nanotubes as RF Filters in Waveguides

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Hoppe, Daniel↗