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At least 163 records · Page 9

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NASA NTRS1976

Industrial ion source technology

A 30 cm electron bombardment ion source was designed and fabricated for micromachining and sputtering applications. This source has a multipole magnetic field that employs permanent magnets between permeable pole pieces. An average ion current density of 1 ma/sq cm with 500 eV argon ions was selected as a design operating condition. The ion beam at this operating condition was uniform and well collimated, with an average variation of plus or minus 5 percent over the center 20 cm of the beam at distances up to 30 cm from the ion source. A variety of sputtering applications were undertaken with a small 10 cm ion source to better understand the ion source requirements in these applications. The results of these experimental studies are also included.

Kaufman, H. R.↗

NASA NTRS1976

Application of ion thruster technology to a 30-cm multipole sputtering ion source

A 30-cm electron-bombardment ion source has been designed and fabricated for micromachining and sputtering applications. This source has a multipole magnetic field that employs permanent magnets between permeable pole pieces. An average ion current density of 1 ma/sq cm with 500-eV argon ions was selected as a design operating condition. The ion beam at this operating condition was uniform and well collimated, with an average variation of + or -5 percent over the center 20 cm of the beam at a distance up to 30 cm from the ion source.

Robinson, R. S.↗

NASA NTRS1978

Thirty-centimeter-diameter ion milling source

A 30-cm beam diameter ion source has been designed and fabricated for micromachining and sputtering applications. An argon ion current density of 1 mA/cu cm at 500 eV ion energy was selected as a design operating condition. The completed ion source met the design criteria at this operating condition with a uniform and well-collimated beam having an average variation in current density of + or - 5% over the center of 20 cm of the beam. This ion source has a multipole magnetic field that employs permanent magnets between permeable pole pieces. Langmuir probe surveys of the source plasma support the design concepts of a multipole field and a circumferential cathode to enhance plasma uniformity.

Robinson, R. S.↗

NASA NTRS1987

Deep, Precise Etching in Semiconductors

Semiconductors made to accept precise etching after pretreatment. Combination of material destabilization and anisotropic etching permits formation of precise perpendicular-wall cavities in silicon wafers and other semiconductors. New technique extends capabilities of current micromachining technology to fabrication of submillimeter waveguide arrays and filters. Pre-etching process currently used to fabricate thin-walled arrays of submillimeter waveguides for use as dichroic bandpass filters. Possible applications include integration of sensor probes and processing of circuitry on same silicon chip.

Shlichta, P. J.↗

NASA NTRS1987

Fiber optic and laser sensors IV; Proceedings of the Meeting, Cambridge, MA, Sept. 22-24, 1986

The conference presents papers on industrial uses of fiber optic sensors, point and distributed polarimetric optical fiber sensors, fiber optic electric field sensor technology, micromachined resonant structures, single-mode fibers for sensing applications, and measurement techniques for magnetic field gradient detection. Consideration is also given to electric field meter and temperature measurement techniques for the power industry, the calibration of high-temperature fiber-optic microbend pressure transducers, and interferometric sensors for dc measurands. Other topics include the recognition of colors and collision avoidance in robotics using optical fiber sensors, the loss compensation of intensity-modulating fiber-optic sensors, and an embedded optical fiber strain tensor for composite structure applications.

De Paula, Ramon P.↗

NASA NTRS1988

Diode laser-pumped solid-state lasers

An evaluation is made of the consequences for solid-state lasers of novel diode laser-pumping technology. Diode laser-pumped neodymium lasers have operated at an electrical-to-optical efficiency of 10 percent in a single spatial mode, with linewidths of less than 10 kHz, and with a spectral power brightness sufficiently great to allow frequency extension by harmonic generation in nonlinear crystals; this has yielded green and blue sources of coherent radiation. Q-switched operation with kW peak powers and mode-locked operation with 10-picosec pulse widths have also been demonstrated. All-solid-state lasers at prices comparable to those of current flash-lamp-pumped laser systems are foreseen, as are power levels exceeding 1 kW, for coherent radar, global satellite sensing, and micromachining.

Byer, Robert L.↗

NASA NTRS1991

Making High-Pass Filters For Submillimeter Waves

Micromachining-and-electroforming process makes rigid metal meshes with cells ranging in size from 0.002 in. to 0.05 in. square. Series of steps involving cutting, grinding, vapor deposition, and electroforming creates self-supporting, electrically thick mesh. Width of holes typically 1.2 times cutoff wavelength of dominant waveguide mode in hole. To obtain sharp frequency-cutoff characteristic, thickness of mesh made greater than one-half of guide wavelength of mode in hole. Meshes used as high-pass filters (dichroic plates) for submillimeter electromagnetic waves. Process not limited to square silicon wafers. Round wafers also used, with slightly more complication in grinding periphery. Grid in any pattern produced in electroforming mandrel. Any platable metal or alloy used for mesh.

Siegel, Peter H.↗

NASA NTRS1991

Solid state devices

The Solid State Device research program is directed toward developing innovative devices for space remote and in-situ sensing, and for data processing. Innovative devices can result from the standard structures in innovative materials such as low and high temperature superconductors, strained layer superlattices, or diamond films. Innovative devices can also result from innovative structures achieved using electron tunneling or nanolithography in standard materials. A final step is to use both innovative structures and innovative materials. A new area of emphasis is the miniaturization of sensors and instruments molded by using the techniques of electronic device fabrication to micromachine silicon into micromechanical and electromechanical sensors and actuators.

Source record↗

NASA NTRS1991

An adjustable RF tuning element for microwave, millimeter wave, and submillimeter wave integrated circuits

Planar RF circuits are used in a wide range of applications from 1 GHz to 300 GHz, including radar, communications, commercial RF test instruments, and remote sensing radiometers. These circuits, however, provide only fixed tuning elements. This lack of adjustability puts severe demands on circuit design procedures and materials parameters. We have developed a novel tuning element which can be incorporated into the design of a planar circuit in order to allow active, post-fabrication tuning by varying the electrical length of a coplanar strip transmission line. It consists of a series of thin plates which can slide in unison along the transmission line, and the size and spacing of the plates are designed to provide a large reflection of RF power over a useful frequency bandwidth. Tests of this structure at 1 GHz to 3 Ghz showed that it produced a reflection coefficient greater than 0.90 over a 20 percent bandwidth. A 2 GHz circuit incorporating this tuning element was also tested to demonstrate practical tuning ranges. This structure can be fabricated for frequencies as high as 1000 GHz using existing micromachining techniques. Many commercial applications can benefit from this micromechanical RF tuning element, as it will aid in extending microwave integrated circuit technology into the high millimeter wave and submillimeter wave bands by easing constraints on circuit technology.

Lubecke, Victor M.↗

NASA NTRS1991

Novel infrared detector based on a tunneling displacement transducer

The paper describes the design, fabrication, and characteristics of a novel infrared detector based on the principle of Golay's (1947) pneumatic infrared detector, which uses the expansion of a gas to detect infrared radiation. The present detector is constructed entirely from micromachined silicon and uses an electron tunneling displacement transducer for the detection of gas expansion. The sensitivity of the new detector is competitive with the best commercial pyroelectric sensors and can be readily improved by an order of magnitude through the use of an optimized transducer.

Kenny, T. W.↗

NASA NTRS1992

Mechanical properties of 3C silicon carbide

The residual stress and Young's modulus of 3C silicon carbide (SiC) epitaxial films deposited on silicon substrates were measured by load-deflection measurements using suspended SiC diaphragms fabricated with silicon micromachining techniques. The film's residual stress was tensile and averaged 274 MPa while the in-plane Young's modulus averaged 394 GPa. In addition, the bending moment due to the residual stress variation through the thickness of the film was determined by measuring the deflection of free-standing 3C-SiC cantilever beams. The bending moment was in the range of 2.6 x 10 exp -8 -4.2 x 10 exp-8 N m.

Tong, Lijun↗

NASA NTRS1993

Electron-Tunneling Magnetometer

Electron-tunneling magnetometer is conceptual solid-state device operating at room temperature, yet offers sensitivity comparable to state-of-art magnetometers such as flux gates, search coils, and optically pumped magnetometers, with greatly reduced volume, power consumption, electronics requirements, and manufacturing cost. Micromachined from silicon wafer, and uses tunneling displacement transducer to detect magnetic forces on cantilever-supported current loop.

Kaiser, William J.↗

NASA NTRS1993

Techniques For Mass Production Of Tunneling Electrodes

Techniques for mass production of tunneling electrodes developed from silicon-micromachining, lithographic patterning, and related microfabrication processes. Tunneling electrodes named because electrons travel between them by quantum-mechanical tunneling; tunneling electrodes integral parts of tunneling transducer/sensors, which act in conjunction with feedback circuitry to stabilize tunneling currents by maintaining electrode separations of order of 10 Angstrom. Essential parts of scanning tunneling microscopes and related instruments, and used as force and position transducers in novel microscopic accelerometers and infrared detectors.

Kenny, Thomas W.↗

NASA NTRS1993

A Microseismometer for Terrestrial and Extraterrestrial Applications

The scientific and technical requirements of extraterrestrial seismology place severe demands on instrumentation. Performance in terms of sensitivity, stability, and frequency band must match that of the best terrestrial instruments, at a fraction of the size, mass, and power. In addition, this performance must be realized without operator intervention in harsh temperature, shock, and radiation environments. These constraints have forced us to examine some fundamental limits of accelerometer design in order to produce a small, rugged, sensitive seismometer. Silicon micromachined sensor technology offers techniques for the fabrication of monolithic, robust, compact, low-power and -mass accelerometers. However, currently available sensors offer inadequate sensitivity and bandwidth. Our implementation of an advanced silicon micro machined seismometer is based on principles developed at JPL for high-sensitivity position sensor technology. The use of silicon micro machining technology with these new principles should enable the fabrication of a 10(exp -11) g sensitivity seismometer with a bandwidth of at least 0.01 to 20 Hz. The low Q properties of pure single-crystal silicon are essential in order to minimize the Brownian thermal noise limitations generally characteristic of seismometers with small proof masses. A seismometer consists of a spring-supported proof mass and a transducer for measuring its motion. For long period motion a position sensor is generally used, for which the displacement is proportional to the ground acceleration. The mechanical sensitivity can be increased either by increasing the proof mass or decreasing the spring stiffness, neither of which is desirable for planetary applications. Our approach has been to use an ultra sensitive capacitive position sensor with a sensitivity of better than 10(exp -13) m/Hz(exp 1/2). This allows the use of a stiffer suspension and a smaller proof mass. We have built several prototypes using these principles, and tests show that these devices can exhibit performance comparable to state-of-the-art instruments.

Banerdt, W.↗

NASA NTRS1992

Space micro-guidance and control - Applications and architectures

The features and the components of a new microscale guidance, navigation, and control (GN&C) system for future space systems are discussed. An approach is described for the utilization of new microengineering technologies for achieving major reductions in the GN&C system's mass, size, power, and costs. The micro-GN&C system and the component concepts include microactuated adaptive optics, micromachined inertial sensors, fiberoptic data nets with light-power transmission, and VLSI microcomputers. The GN&C system will be applied in microspacecraft, microlanders, microrovers, remote sensing platforms, interferometers, and deployable reflectors.

Mettler, Edward↗

NASA NTRS1992

Electron tunnel sensors

We have used the extreme sensitivity of electron tunneling to variations in electrode separation to construct a novel, compact displacement transducer. Electrostatic forces are used to control the separation between the tunneling electrodes, thereby eliminating the need for piezoelectric actuators. The entire structure is composed of micromachined silicon single crystals. Applications of the tunneling displacement transducer to the measurement of acceleration and infrared signals are discussed. Measurements of acceleration and infrared sensitivity are reported.

Kenny, T. W.↗

NASA NTRS1992

Development of a hydrogen gas sensor using microfabrication technology

Microfabrication and micromachining technologies are used to produce a hydrogen gas sensor based on a palladium-silver film. The sensor uses a heater that is fabricated by diffusing p-type borones into the substrate, forming a resistance heater. A diode for temperature measurement is produced using p-type boron and n-type phosphor diffused into the substrate. A thickness of the palladium-silver film is approximately 300 arcsec. The hydrogen gas sensor employs the proven palladium-silver diode structure and is surrounded by a phosphor doped resistance heater which can be heated up to a temperature of 250 C. Experimental results show that the sensor is capable of operating over a wide range of hydrogen concentration levels between 0-95 percent without any hysteresis effects.

Liu, Chung-Chiun↗

NASA NTRS1993

Fabrication of high-quality superconductor-insulator-superconductor junctions on thin SiN membranes

We have successfully fabricated high-quality and high-current density superconductor-insulator-superconductor (SIS) junctions on freestanding thin silicon nitride (SIN) membranes. These devices can be used in a novel millimeter-wave and THz receiver system which is made using micromachining. The SIS junctions with planar antennas were fabricated first on a silicon wafer covered with a SiN membrane, the Si wafer underneath was then etched away using an anisotropic KOH etchant. The current-voltage characteristics of the SIS junctions remained unchanged after the whole process, and the junctions and the membrane survived thermal cycling.

Garcia, Edouard↗