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At least 163 records · Page 9

Coherent band-edge oscillations and dynamic longitudinal-optical phonon mode splitting as evidence for polarons in perovskites

The coherence of collective modes, such as phonons and polarons, and their modulation of electronic states is long sought in complex systems, which is a crosscutting issue in photovoltaics and quantum electronics. In photovoltaic cells and lasers based on metal halide perovskites, the presence of polarons, i.e., photocarriers dressed by the macroscopic motion of charged lattice, assisted by terahertz (THz) longitudinal-optical (LO) phonons, has been intensely studied yet is still debated. This may be key for explaining the remarkable properties of the perovskite materials, e.g., defect tolerance, long charge lifetimes, and diffusion lengths. In this work we use the intense single-cycle THz pulse with peak electric field up to E THz = 1000 kV/cm to drive coherent polaronic band-edge oscillations at room temperature in CH 3 NH 3 PbI 3 (MAPbI 3 ). We reveal the oscillatory behavior is dominated by a specific quantized lattice vibration mode at $ω$ LO ~ 4 THz, which is both dipole and momentum forbidden. THz-driven coherent polaron dynamics exhibits distinguishing features: room temperature coherent oscillations at ω LO longer than 1 ps in both single crystals and thin films, mode-selective modulation of different band-edge states assisted by electron-phonon interaction, and dynamic mode splitting at low temperature due to entropy and anharmonicity of organic cations. Our results demonstrate intense THz-driven coherent band-edge modulation is a powerful probe of electron-lattice coupling phenomena and polaronic quantum control in perovskites.

36 MATERIALS SCIENCE↗

Implementation of Talbot–Lau x-ray deflectometry in the pulsed power environment using a copper X-pinch backlighter

A Talbot–Lau x-ray deflectometer can map electron density gradients in high energy density plasmas, as well as provide information about plasma elemental composition through single-image x-ray refraction and attenuation measurements. A new adaptation to a pulsed power environment used backlighting from copper X-pinches, allowing for electron density mapping of a low-Z object. Even though the X-pinch backlighter is not properly optimized for emitting x-rays in terms of source size and photon fluence, Moire fringe patterns with contrast up to 14% and fringe shift due to refraction on a beryllium object are obtained. Due to the proximity of the deflectometer with the X-pinch (~6 cm), it is shown that a protective filter is required to avoid damage in the closest (i.e., source) grating due to both plasma debris and mechanical shock. Regarding grating survival, these did not show any damage due to the intense magnetic field or heating induced by plasma radiation. Electron density on beryllium was measured with a difference lower than 16%. The areal electron density mapping of the sample was limited by source size characteristics, in similarity to transmission radiography. These results show the potential of plasma electron density as well as material mapping through Talbot–Lau x-ray deflectometry in a pulsed power environment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Guest Editorial Special Section on Advanced Medium-Voltage Power Electronics for Grid Interactive Applications

Medium-voltage power electronics (MVPE) plays essential roles in power grid modernization and links the MV distribution grid with low-voltage consumers and prosumers. Various MVPE devices, such as solid-state transformers or circuit breakers, inverter-based resources, power flow controllers, etc., bring the benefits of voltage conversion and power regulation in small footprint, power quality and efficiency improvements, and enhancements of grid controllability, flexibility, stability, and resilience. The MVPE also makes it possible for sustainable energy systems, such as solar/wind farms and energy storage generating facilities, to directly access to MV grids without multistage conversions. With their intrinsic intelligence and communications, MVPE enables many new smart grid functions and applications, e.g., dc interconnections and electric vehicle charging, which were not envisioned by traditional power grids otherwise. In addition, the integration of physical power processing units with cyber components forms a cyber-physical system, which is essential for long-term sustainability, development, and environmental preservation. Nonetheless, technical challenges on MVPE device reliability, scalable and efficient converter topologies, control stability, large-scale modeling and simulation, to name a few, need to be addressed and advanced to the next level. In conclusion, this Special Section on Advanced MV Power Electronics for Grid Interactive Applications in IEEE Transactions on Power Electronics (TPEL) provides an insight on some of the recent advances in MVPE and emerging challenges and potential solutions.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Effect of heterostructure engineering on electronic structure and transport properties of two-dimensional halide perovskites

Organic-inorganic halide perovskite solar cells have attracted much attention due to their low-cost fabrication, flexibility, and high-power conversion efficiency. More recent efforts show that the reduction from three- to two-dimensions (2D) of organic–inorganic halide perovskites promises an exciting opportunity to tune their electronic properties. Here, we explore the effect of reduced dimensionality and heterostructure engineering on the intrinsic material properties, such as energy stability, bandgap and transport properties of 2D hybrid organic–inorganic halide perovskites using first-principles density functional theory. We show that the energy stability of engineered perovskite heterostructures is significantly enhanced. The heterostructures with improved stability also show excellent transport properties similar to their bulk counterparts. Furthermore, these layered chemistries demonstrate the advantage of a broad range of tunable bandgaps and high-absorption coefficient in the visible spectrum. The proposed 2D heterostructured material holds potential for nano-optoelectronic devices as well as for effective photovoltaics.

36 MATERIALS SCIENCE↗

Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure

An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metal-organic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ∼0 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N{sub 2} laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35 %) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5 %, respectively. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

An ultrafast laser pulse picker technique for high-average-current high-brightness photoinjectors

Beam diagnostics in high brightness photoinjectors requires that optical pulses from a high-power drive laser be picked up with an ultrahigh pulse contrast ratio and without temporal profile distortion. In high-average-current high-brightness photoinjectors, high-power drive lasers are routinely operated at GHz-level pulse repetition rate and it is challenging to achieve pulse picking without any pulse distortion. Here, we report on a new ultrafast pulse picker technique for beam diagnostics in high-average-current high-brightness photoinjectors. By efficiently combining an ultrafast low-power electro-optic modulator, high-power fiber laser amplifiers, a high-power Pockels Cell, and a frequency doubling module, we have successfully demonstrated optical bunch (30 pulses per bunch) pickup from a 704 MHz high-power drive laser and achieved a 10 6 :1 pulse contrast ratio and nearly zero pulse distortion. The performance of this pulse picking technique has been verified through beam characterization and electron cooling in the low energy RHIC electron cooling accelerator at Brookhaven National Laboratory.

43 PARTICLE ACCELERATORS↗

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Physics↗

Novel Ultrabright and Air-Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening

The high brightness, low emittance electron beams achieved in modern X-ray free-electron lasers (XFELs) have enabled powerful X-ray imaging tools, allowing molecular systems to be imaged at picosecond time scales and sub-nanometer length scales. One of the most promising directions for increasing the brightness of XFELs is through the development of novel photocathode materials. Whereas past efforts aimed at discovering photocathode materials have typically employed trial-and-error-based iterative approaches, this work represents the first data-driven screening for high brightness photocathode materials. Through screening over 74 000 semiconducting materials, a vast photocathode dataset is generated, resulting in statistically meaningful insights into the nature of high brightness photocathode materials. This screening results in a diverse list of photocathode materials that exhibit intrinsic emittances that are up to 4x lower than currently used photocathodes. In a second effort, multiobjective screening is employed to identify the family of M 2 O (M = Na, K, Rb) that exhibits photoemission properties that are comparable to the current state-of-the-art photocathode materials, but with superior air stability. This family represents perhaps the first intrinsically bright, visible light photocathode materials that are resistant to reactions with oxygen, allowing for their transport and storage in dry air environments.

36 MATERIALS SCIENCE↗

In-situ L-TEM observations of dynamics of nanometric skyrmions and antiskyrmions

Nanometer-scale magnetic skyrmions and antiskyrmions exhibit unique dynamical behaviors in response to external stimuli, which are critical for their applications in low-power-consumption spintronic devices. This review discusses recent advancements in in-situ Lorentz transmission electron microscopy (L-TEM) observations of skyrmion and antiskyrmion dynamics, and demonstrates the manipulation and evolution of these textures in various magnetic materials under electric, magnetic, and thermal stimuli. Specifically, the motion tracking of single skyrmions and their clusters, and the deformation and transformation of skyrmions has been demonstrated in chiral helimagnets FeGe, Co 9 Zn 9 Mn 2 , and Co 10 Zn 10 with precise application of electric currents. Skyrmions can undergo dynamic transitions in current-driven skyrmion motions, from pinned states to linear flows, and even exhibit deformation into elliptical shapes, underscoring their topological robustness and dynamic flexibility. In addition, the manipulation of single antiskyrmions and antiskyrmion-lattice phases in (Fe 0.63 Ni 0.3 Pd 0.07 ) 3 P with S 4 symmetry is discussed, highlighting their high mobility and unique sliding capabilities along stripe domains at room temperature, facilitated by nanosecond pulsed electric currents. Finally, the temperature gradient-driven motion and topological transformation of elliptical skyrmions and antiskyrmions in this same material are investigated. In conclusion, the comprehensive insights gained from the L-TEM imaging technique are pivotal in advancing the design and functionality of next-generation skyrmion/antiskyrmion-based spintronic devices.

(Anti)skyrmion↗

Room-temperature multiferroicity in sliding van der Waals semiconductors with sub-0.3 V switching

The search for van der Waals (vdW) multiferroic materials has been challenging but also holds great potential for the next-generation multifunctional nanoelectronics. The group-IV monochalcogenide, with an anisotropic puckered structure and an intrinsic in-plane polarization at room temperature, manifests itself as a promising candidate with coupled ferroelectric and ferroelastic order as the basis for multiferroic behavior. Unlike the intrinsic centrosymmetric AB stacking, we demonstrate a multiferroic phase of tin selenide (SnSe), where the inversion symmetry breaking is maintained in AA-stacked multilayers over a wide range of thicknesses. We observe that an interlayer-sliding-induced out-of-plane (OOP) ferroelectric polarization couples with the in-plane (IP) one, making it possible to control out-of-plane polarization via in-plane electric field and vice versa. Notably, thickness scaling yields a sub-0.3 V ferroelectric switching, which promises future low-power-consumption applications. Furthermore, coexisting armchair- and zigzag-like structural domains are imaged under electron microscopy, providing experimental evidence for the degenerate ferroelastic ground states theoretically predicted. Non-centrosymmetric SnSe, as the first layered multiferroic at room temperature, provides a novel platform not only to explore the interactions between elementary excitations with controlled symmetries, but also to efficiently tune the device performance via external electric and mechanical stress.

Chen, Rui [University of California, Berkeley, CA ↗

Sensitivity of DUNE to low energy physics searches

The Deep Underground Neutrino Experiment (DUNE), a next-generation long-baseline neutrino oscillation experiment, is a powerful tool to perform low energy physics searches. DUNE will be uniquely sensitive to the electron-neutrino-flavour component of the burst of neutrinos expected from the next Galactic core-collapse supernova, and also capable of detecting solar neutrinos. DUNE will have four modules of 70-kton liquid argon mass in total, placed 1.5 km underground at the Sanford Underground Research Facility in the USA. These modules are being designed exploiting different liquid argon time projection chamber technologies and based on the physics requirements that take into account the particularities of the low energy physics searches.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

A method for infrared sensing based on oscillating zero power microelectromechanical photoswitches

This paper presents an interesting new method for measuring infrared (IR) radiation using a micromechanical photoswitch (MP). By leveraging the event-driven narrowband IR detection capability of an MP, electrostatic pull-in, and a novel integrated thermomechanical feedback mechanism, we show for the first time a zero-standby power IR sensor that can not only detect above-threshold IR power levels (>600 nW), but also generates an oscillating electromechanical pulse waveform whose frequency is a function of the incident IR power level. The device design, the theoretical model for the proposed idea, and the experimental demonstration of the mechanism are shown. The unique capability of zero-standby power IR detection and frequency-tunable AC waveform generation from a constant input signal (IR radiation) without the need for additional electronics promises to enable new functionalities for such remote wake-up sensors beyond simply detection, with potential uses in microrobotics and low-power computing.

Rajaram, Vageeswar (ORCID:0000000199546844)↗

Calibrating cryogenic temperature of TEM specimens using EELS

Cryogenic Scanning/Transmission Electron Microscopy has been established as a leading method to image sensitive biological samples and is now becoming a powerful tool to understand materials' behavior at low temperatures. However, achieving precise local temperature calibration at low temperatures remains a challenge, which is especially crucial for studying phase transitions and emergent physical properties in quantum materials. In this study, we employ electron energy loss spectroscopy (EELS) to measure local cryogenic specimen temperatures. Here we use the temperature-dependent characteristics of aluminum's bulk plasmon peak in EEL spectra, which shifts due to changes in electron density caused by thermal expansion and contraction. We successfully demonstrate the versatility of this method by calibrating different liquid nitrogen cooling holders in various microscopes, regardless of whether a monochromated or non-monochromated electron beam is used. Temperature discrepancies between the actual temperature and the setpoint temperatures are identified across a range from room temperature to 100 K. This work demonstrates the importance of temperature calibrations at intermediate temperatures and presents a straightforward, robust method for calibrating local temperatures of cryogenically-cooled specimens in electron microscopes.

36 MATERIALS SCIENCE↗

Athermal phonon collection efficiency in diamond crystals for low mass dark matter detection

Here, we explored the efficacy of lab-grown diamonds as potential target materials for the direct detection of sub-GeV dark matter (DM) using metallic magnetic calorimeters (MMCs). Diamond, with its excellent phononic properties and the low atomic mass of the constituent carbon, can play a crucial role in detecting low mass dark matter particles. The relatively long electron-hole pair lifetime inside the crystal may provide discrimination power between the DM-induced nuclear recoil events and the background-induced electron recoil events. Utilizing the fast response times of the MMCs and their unique geometric versatility, we deployed a novel methodology for quantifying phonon dynamics inside diamond crystals. We demonstrated that lab-grown diamond crystals fabricated via the chemical vapor deposition (CVD) technique can satisfy the stringent quality requirements for sub-GeV dark matter searches. The high-quality polycrystalline CVD diamond showed a superior athermal phonon collection efficiency compared to that of the reference sapphire crystal, and achieved energy resolution 62.7 eV at the 8.05 keV copper fluorescence line. With this energy resolution, we explored the low-energy range below 100 eV and confirmed the existence of so-called low-energy excess (LEE) reported by multiple cryogenic experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Dependence of alpha-particle-driven Alfven eigenmode linear stability on device magnetic field strength and consequences for next-generation tokamaks

Recently-proposed tokamak concepts use magnetic fields up to 12 T, far higher than in conven- tional devices, to reduce size and cost. Theoretical and computational study of trends in plasma behavior with increasing field strength is critical to such proposed devices. This paper considers trends in Alfven eigenmode (AE) stability. Energetic particles, including alphas from D-T fusion, can destabilize AEs, possibly causing loss of alpha heat and damage to the device. AEs are sensitive to device magnetic field via the field dependence of resonances, alpha particle beta, and alpha orbit width. We describe the origin and effect of these dependences analytically and by using recently- developed numerical techniques (Rodrigues et al. 2015 Nucl. Fusion 55 083003). The work suggests high-field machines where fusion-born alphas are sub-Alfvenic or nearly sub-Alfvenic may partially cut off AE resonances, reducing growth rates of AEs and the energy of alphas interacting with them. High-field burning plasma regimes have non-negligible alpha particle beta and AE drive, but faster slowing down time, provided by high electron density, and higher field strength reduces this drive relative to low-field machines with similar power densities. The toroidal mode number of the most unstable modes will tend to be higher in high magnetic field devices. The work suggests that high magnetic field devices have unique, and potentially advantageous, AE instability properties at both low and high densities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗

Evaluation and Demonstration of Intrusion Detection for Spent Fuel Storage Facilities

The IAEA recommends dual containment and surveillance (C/S) systems for difficult to access or difficult to measure spent fuel storage areas. However, many storage areas have limitations that prevent traditional secondary C/S systems, such as radiation levels too high for inspectors to apply individual Tamper Indicating Devices (TID) or have physical impedances to the use of TIDs. Recent developments in C/S technology include Laser Curtain for Containment (LCCT) technology implemented at Atucha-1 power plant in Argentina. The LCCT is a new approach to perimeter-wide C/S and the IAEA has granted provisional approval for its use as one of two required C/S systems. This proposal focuses on investigating and testing new and evolving completely passive (or ultra-low power) tamper indicating systems that will provide backup C/S to the LCCT even during power outages. An investigation of Commercial Off The Shelf (COTS) technology will be conducted to identify readily available options. Optically Stimulated Luminescence (OSL) fibers will also be investigated. OSL fibers are a passive technology that can measure radiation dose by knocking an electron into a metastable state where it remains until the fiber is interrogated with light. The goal of this project would be to investigate COTS technologies that can be used in low or no power scenarios for radiation detection as well as test and evaluate OSL technology, which can operate passively in no power scenarios. Limitations for each technology will be determined and documented in an effort to determine the best technology for spent fuel storage monitoring.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

IEEE P2988: Recommended Practice of Use and Functions of Virtual Synchronous Machines

Power systems are going through a paradigm shift from centralized generation to distributed generation. This brings unprecedented challenges to power systems stability, reliability, and security. Operating power electronic converters as Virtual Synchronous Machines (VSMs) can bring backward compatibility to power systems, unify and harmonize the integration and interaction of future power systems players, and improve power system stability, reliability, and security. This is vital for the large-scale adoption of distributed energy resources, the advancement of sustainability, and the development of a low-carbon economy. This IEEE 2988 Recommended Practice will define the fundamental principles, mandatory functions, and optional functions of a VSM, i.e., a power electronic converter that is operated to behave like conventional synchronous machines. It will not describe or specify power semiconductor devices, hardware topologies, or micro-controllers that are used to build a VSM. This talk will discuss the activities and development plan for IEEE 2988 with the aim to engaging broad stakeholders and widening participation.

Zhong, Qing-Chang↗