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This paper discusses the process being used and the results of the selection and qualification of a low cost prepackaged diode laser with a custom packaged microchip laser crystal.
This paper discusses the process being used and the results of the selection and qualification of a low cost prepackaged diode laser with a custom packaged microchip laser crystal.
Principal strains on surface of hot specimen determined at temperatures up to 750 degrees C by use of noncontact optical method based on work of I. Yamaguchi. Strains deduced from measured shifts in laser speckle patterns reflected from specimen. No preparation of surface required. Optical strain-measuring system includes rotatable assembly to enable measurement of strain in any desired direction along surface of specimen.
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A plasma mirror platform was developed for the OMEGA-EP facility to redirect beams, thus enabling more flexible experimental configurations as well as a platform that can be used in the future to improve laser contrast. The plasma mirror reflected a short pulse focusing beam at 22.5° angle of incidence onto a 12.5 μm thick Cu foil, generating Bremsstrahlung and k α x rays, and accelerating ions and relativistic electrons. By measuring these secondary sources, the plasma mirror key performance metrics of integrated reflectivity and optical quality are inferred. It is shown that for a 5 ± 2 ps, 310 J laser pulse, the plasma mirror integrated reflectivity was 62 ± 13% at an operating fluence of 1670 J cm –2 , and that the resultant short pulse driven particle acceleration and x-ray generation indicate that the on target intensity was 3.1 × 10 18 W cm –2 , which is indicative of a good post-plasma mirror interaction beam optical quality. By deriving the plasma mirror performance metrics from the secondary source scalings, it was simultaneously demonstrated that the plasma mirror is ready for adoption in short pulse particle acceleration and high energy photon generation experiments using the OMEGA-EP system.
Work on the development of an interferometric system for the purpose of absolute length determination commenced in January of this year. Our goal is to develop a system capable of measurements on the order of one meter with an accuracy of 1 part in 10 or greater. A modified Michelson bread board with stabilized laser diode source was assembled. Some preliminary measurements began using the tunable Santek laser in an FM modulation scheme. During this same period a literature search yielded a paper by Suematsu and Takeda which discusses a promising fourier transform technique for real time data analysis. We are in the process of evaluating this technique while we continue to change and upgrade the system configuration.
The height of the GEOS-C spacecraft was utilized as measured by the onboard radar altimeter, for an improved determination of the earth's gravitational field and for the determination of the variation of the physical surface of the oceans. Two tracking system approaches to accurately determine the spacecraft height (orbit) are described and their results stated. These are satellite-to-satellite tracking (SST) and ground laser tracking (GLT). Height variations can be observed in the dm-regions using SST and in the m-region using present GLT.
An attempt was made to use GEOS-C spacecraft height, as measured by the onboard radar altimeter, for an improved determination of the earth's gravitational field and for the determination of the variation of the physical surface of the oceans. Two tracking system approaches to accurately determine the spacecraft height (orbit) are described and their results stated. These are satellite-to-satellite tracking (SST) and ground-laser tracking (GLT). Height variations can be observed in the dm-regions using SST and in the m-region using present GLT.
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Air-broadened and N2-broadened halfwidths at room temperature for twenty-five transitions in the nu-4 fundamental band of (C-12)H4 have been determined from IR absorption spectra recorded with a tunable diode laser spectrometer. Two tunable diode lasers operating in the 1250-1380-kayser region were used to obtain these data. Air-broadened halfwidths for twenty of these lines were also determined from additional spectra recorded at 0.01-kayser resolution with the Fourier transform spectrometer in the McMath solar telescope complex on Kitt Peak. The air-broadened halfwidths obtained from these two techniques are very consistent with agreement better than 3 percent in most cases.
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Emissivity and reflectivity in the thermal infrared spectral region (8-13 microns) may be used to discriminate among rocks and minerals. Although considerable success has been achieved in remote sensing classification of rock types based on emissivity measurements made with NASA's Thermal Infreared Multispectral Scanner (TIMS), classification based on reflectivity offers several advantages: much narrower bandwidths are used, higher signal to noise ratios are possible, and measurements are little affected by surface temperature. As a demonstration, an airborne CO2 laser instrument was flown along the margin of Death Valley, California. Measurements of spectral reflectance collected with this device were compared with emissivity measurements made with the TIMS. Data from either instrument provided the means for recognizing boundaries between geologic units including different rock types and fan surfaces of different ages.
Spaceflight system electronic devices must survive a wide range of radiation environments with various particle types including energetic protons, electrons, gamma rays, x-rays, and heavy ions. High-energy charged particles such as heavy ions can pass straight through a semiconductor material and interact with a charge-sensitive region, generating a significant amount of charge (electron-hole pairs) along their tracks. These excess charges can damage the device, and the response can range from temporary perturbations to permanent changes in the state or performance. These phenomena are called single event effects (SEE). Before application in flight systems, electronic parts need to be qualified and tested for performance and radiation sensitivity. Typically, their susceptibility to SEE is tested by exposure to an ion beam from a particle accelerator. At such facilities, the device under test (DUT) is irradiated with large beams so there is no fine resolution to investigate particular regions of sensitivity on the parts. While it is the most reliable approach for radiation qualification, these evaluations are time consuming and costly. There is always a need for new cost-efficient strategies to complement accelerator testing: pulsed lasers provide such a solution. Pulsed laser light can be utilized to simulate heavy ion effects with the advantage of being able to localize the sensitive region of an integrated circuit. Generally, a focused laser beam of approximately picosecond pulse duration is used to generate carrier density in the semiconductor device. During irradiation, the laser pulse is absorbed by the electronic medium with a wavelength selected accordingly by the user, and the laser energy can ionize and simulate SEE as would occur in space. With a tightly focused near infrared (NIR) laser beam, the beam waist of about a micrometer can be achieved, and additional scanning techniques are able to yield submicron resolution. This feature allows mapping of all of the sensitive regions of the studied device with fine resolution, unlike heavy ion experiments. The problematic regions can be precisely identified, and it provides a considerable amount of information about the circuit. In addition, the system allows flexibility for testing the device in different configurations in situ.