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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Tracing baryon and electric charge transport in isobar collisions

It is of fundamental interest to understand the carrier of conserved quantum charges within protons and nuclei at high energy. Preliminary data from isobar collisions at RHIC reveal a scaled net-baryon to net-electric charge ratio (B/ΔQ × ΔZ/A) at midrapidity between 1.2 and 2, consistent with string junction model predictions. Here, we compute the initial stage scaled net baryon to net-electric charge ratio for isobar collisions. Our model incorporates a realization of the string junction model and models the nuclear structure. Our predictions identify the baseline expectations for such measurement and quantify the impact of the nuclear structure.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2022

Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling

InGaN-based multi-quantum well (MQW) solar cells are promising devices for photovoltaics (e.g., for tandem solar cells and concentrator systems), space applications, and wireless power transfer. In order to improve the efficiency of these devices, the factors limiting their efficiency and stability must be investigated in detail. Due to the complexity of a MQW structure, compared with a simple pn junction, modeling the spectral response of these solar cells is not straightforward, and ad hoc methodologies must be implemented. In this paper, we propose a model, based on material parameters and closed-formula equations, that describes the shape of the quantum efficiency of InGaN/GaN MQW solar cells, by taking into account the layer thickness, the temperature dependence of the absorption coefficient, and quantum confinement effects. We demonstrate (i) that the proposed model can effectively reproduce the spectral response of the cells; in addition, (ii) we prove that the bulk p-GaN layer absorbs radiation, but the carriers photogenerated in this region do not significantly contribute to device current. Finally, we show that (iii) by increasing the temperature, there is a redshift of the absorption edge due to bandgap narrowing, which can be described by Varshni law and is taken into account by the model, and a lowering in the extraction efficiency due to the increase in recombination (mostly Shockley–Read–Hall) inside the quantum wells, which is also visible by decreasing light intensity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Controlling superconductivity of CeIrIn 5 microstructures by substrate selection

Superconductor/metal interfaces are usually fabricated in heterostructures that join these dissimilar materials. A conceptually different approach has recently exploited the strain sensitivity of heavy-fermion superconductors, selectively transforming regions of the crystal into the metallic state by strain gradients. The strain is generated by differential thermal contraction between the sample and the substrate. Here, we present an improved finite-element model that reliably predicts the superconducting transition temperature in CeIrIn 5 even in complex structures. Different substrates are employed to tailor the strain field into the desired shapes. Using this approach, both highly complex and strained as well as strain-free microstructures are fabricated to validate the model. This enables a high degree of control over the microscopic strain fields and forms the basis for more advanced structuring of superconductors as in Josephson junctions yet also finds natural use cases in any material class in which a modulation of the physical properties on a chip is desirable.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Conductive Adhesives for Metallization of Interdigitated Back Contact Solar Cells

The metallization and interconnection of Si solar cells to form a module is usually a multi-step process: cells are metallized individually, soldered into strings, and subsequently assembled into a module. Furthermore, the metallization process for individual cells must be compatible with the doped surfaces being contacted, which creates additional challenges when moving from diffused junctions to heterojunctions and/or passivated contact structures. To mitigate these problems and streamline module manufacturing for the case of interdigitated back contact (IBC) cell modules, we developed an approach wherein unmetallized IBC cells are bonded directly to a circuitized backsheet using a conductive adhesive (CA) that only conducts out-of-plane. The metal/CA/silicon stack is bonded by hot-pressing at 100-200 degrees C.For a CA consisting of ethylene vinyl acetate (EVA) filled with Ag-coated spheres or indium powder we find that contact resistivities in the range of 1-10 Wcm 2 are obtained, regardless of which conductive filler and which hot pressing parameters are used. XPS revealed that about 1-2 nm EVA residue bonds to the Si in these samples, suggesting the formation of an insulating barrier that is responsible for the high contact resistance. Using indium powder alone, improved contact resistivities <0.6 Wcm 2 , high shunt resistances, and an implied open-circuit voltage loss below 10 mV were obtained. Furthermore, a cost estimate is presented, indicating that substantial cost savings of up to $10/m 2 , or about $0.05/W DC , are possible through CA-based IBC module manufacturing.

14 SOLAR ENERGY↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗
NASA NTRS1972

Afar and ERTS-1 imagery

The author has identified the following significant results. The excellent ERTS-1 imagery of the Afar region of Ethiopia permits a preliminary revision to the analysis of the structures of this triple-rift junction, and also revisions to the outcrops of some lithological formations. The fault-belts of the Afar floor can now be mapped in fine detail. The Danakil horst is identified to be limited on its western side against Afar by a major fault-line, and it seems unlikely that the horst is the exposed, easterly portion of a west-dipping sialic block underlying all northern Afar. The Salt Plain appears to be a true graben. The Ethiopian plateau-Afar margin consists of a series of right-offset sectors, the offsets being marked by silicic volcanic centers. The nature of these offsets is related to the vexed question of cross-rift faulting. Such faulting is identifiable on the ERTS-1 imagery, both on the Afar floor, and in the monoclinally warped western margin. The significance of this faulting, though subordinate to the tensional faults of the fault-belts, awaits elucidation.

Mohr, P. A.↗
NASA NTRS1977

A capacitively shunted superconducting microbridge

A superconducting microbridge small enough to exhibit the Josephson effect has been shunted by a large external capacitance. Surprisingly little capacitive hysteresis is observed in its I-V characteristic. Prominent subgap structures are seen. The resistively shunted junction (RSJ) model fails to explain the observations.

Chiao, R. Y.↗
NASA NTRS1982

Towards a 700 mV silicon solar cell

The key to improved silicon solar cell performance lies in increasing cell open circuit voltage. Not only does improved voltage direclty increase cell efficiency, but it also increases the limiting value of fill factor and decreases the temperature sensitivity of the cell. Limits on attainable open circuit voltage are not well defined. A thermodynamic limit of 850 mV exists for black body silicon cells, with 700 mV long regarded as a practical limit. This paper describes experimental work which has resulted in experimental devices with open circuit voltages approaching 700 mV. Values up to 694 (AM0, 25 C) have been demonstrated. The cells are similar in structure to conventional p-n junction cells, but particular attention is paid to passivating the entire top surface of the cell, including regions under the top contact.

Green, M. A.↗
NASA NTRS1990

Geology of the Venus equatorial region from Pioneer Venus radar imaging

The data collected by Pioneer Venus have been used to map the broad radar characteristics of the equatorial region on the basis of radar brightness and texture. Seven units are defined and are used to assess the geologic character of the equatorial region. The correspondence between features in the 15 deg region of overlap between Pioneer Venus ans Venera 15/16 images is examined and used to extend units mapped in the northern high latitudes into the equatorial region. Using the properties of rms slope, reflectivity, the scattering behavior of the surface, and topographic signature, seven physiographic units are mapped on the basis of the distribution of the radar units in the equatorial region and are identified by increasing complexity as plains, dark halo plains, upland rises, upland plateaus, interhighland tectonic zones, tectonically segmented linear highlands, and tectonic junctions. The distribution of larger circular structures interpreted as coronae is also examined.

Senske, D. A.↗
NASA NTRS2004

Deep Structure of the Earth and Concentration of Metals in the Lithosphere: A Geodynamic Approach

A discussion of and introduction to satellite-altitude geopotential fields studies and their interpretation with emphasis on results from metalliferous regions will be given. The magnetic and gravimetric measurements from satellite altitudes show heterogeneity in deeper parts of the lithosphere. These patterns of magnetic anomalies do not only reveal the largest iron ore deposits such as Kiruna, Sweden and Kursk, Russia, but also linear features indicating structural discontinuities. Changes of magnetic amplitude of these patterns are caused by intersecting transverse fractures localizing magmatism and concentration of metals. The role of trans-regional mantle-rooted structural discontinuities in the concentration of metals will be discussed and a new type of mineral prognosis map will be presented. Deep-rooted structural discontinuities, defined by combination of geological and geophysical criteria, with spacing of several hundred kilometers, reveal a quite uniform pattern in the deeper parts of the lithosphere. As these structures provide favorable pathways for the ascent of heat, magmas and ore-forming fluids, their recognition is of crucial importance and can be used in the compilation of a new type of mineral prognosis map. Examples are shown from the United States, Canada, China, Burma, South America, Europe and Australia. The European example includes a pattern of east west trending structural discontinuities or belts and their junction with the NW-trending Tornqvist-Teisseyre Line. The Upper Silesian-Cracovian Zn-Pb district occurs along one of the latitudinal belts. Leslaw Teper of the University of Silesia has been invited to show the fractures in crystalline basement beneath the sediments hosting the Zn-Pb ores.

Taylor, Patrick T.↗
NASA NTRS2004

Contribution to the Study of Regional Magnetization of Satellite Magnetic Measurement: Magsat, Orsted, and Champ (with Gravity Field)

A discussion of and introduction to satellite-altitude geopotential field studies and their interpretation with emphasis on results from metalliferous regions will be given. The magnetic and gravimetric measurements from satellite altitudes show heterogeneity in deeper parts of the lithosphere. These patterns of magnetic anomalies do not only reveal the largest iron ore deposits such as Kiruna, Sweden, Kursk, Russia, and Banugi, Central African Republic but also linear features indicating structural discontinuities. Changes of magnetic amplitude of these patterns are caused by intersecting transverse fractures localizing magmatism and concentration of metals. In addition satellite altitude data are related to variations in crustal thickness and heat flow. Deep-rooted structural discontinuities, defined by combination of geological and geophysical criteria, with spacing of several hundred kilometers, reveal a quite uniform pattern in the deeper parts of the lithosphere. As these structures provide favorable pathways for the ascent of heat, magmas and ore-forming fluids, their recognition is of crucial importance and can be used in the compilation of a new type of mineral prognosis map. An example from Europe includes a pattern of east west trending structural discontinuities or belts and their junction with the NW-trending Tornqvist-Teisseyre Line. The Upper Silesian-Cracovian Zn-Pb district occurs along one of the latitudinal belts. Leslaw Teper of the University of Silesia has been invited to show the fractures in crystalline basement beneath the sediments hosting the Zn-Pb ores.

Taylor, Patrick T.↗
NASA NTRS2007

Four-Way Ka-Band Power Combiner

A waveguide structure for combining the outputs of four amplifiers operating at 35 GHz (Ka band) is based on a similar prior structure used in the X band. The structure is designed to function with low combining loss and low total reflected power at a center frequency of 35 GHz with a 160 MHz bandwidth. The structure (see figure) comprises mainly a junction of five rectangular waveguides in a radial waveguide. The outputs of the four amplifiers can be coupled in through any four of the five waveguide ports. Provided that these four signals are properly phased, they combine and come out through the fifth waveguide port.

Perez, Raul↗
DOE OSTI2025

Crystalline-symmetry-protected Majorana modes in coupled quantum dots

We propose a minimalist architecture for achieving various crystalline-symmetry-protected Majorana modes in an array of coupled quantum dots. Our framework is motivated by the recent experimental demonstrations of two-site and three-site artificial Kitaev chains in a similar setup. We find that introducing a π-phase domain wall in the Kitaev chain leads to a pair of mirror-protected Majorana zero modes located at or near the junction. Joining two π junctions into a closed loop, we can simulate two distinct classes of two-dimensional higher-order topological superconducting phases, both carrying symmetry-protected Majorana modes around the sample corners. As an extension of the π junction, we further consider a general vertex structure where n Kitaev chains meet, i.e., a Kitaev n vertex. We prove that such an n vertex, if respecting a dihedral symmetry group D n , necessarily carries n vertex-bound Majorana modes protected by the D n symmetry. Resilience of the junction and vertex Majorana bound states against disorder and correlation effects is also discussed. Our architecture paves the way for designing, constructing, and exploring a wide variety of artificial topological crystalline phases in quantum-dot experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

The Rule of Thirds: Controlling Junction Chirality and Polarity in 3D DNA Tiles

The successful self-assembly of tensegrity triangle DNA crystals heralded the ability to programmably construct macroscopic crystalline nanomaterials from rationally-designed, nanoscale components. This 3D DNA tile owes its “tensegrity” nature to its three rotationally-stacked double helices locked together by the tensile winding of a center strand segmented into 7 base pair (bp) inter-junction regions, corresponding to two thirds of a helical turn of DNA. All reported tensegrity triangles to date have employed [Z + 2/3] turn inter-junction segments, yielding right-handed, antiparallel, “J1” junctions. Here, we report here a minimal DNA triangle motif consisting of 3-bp inter-junction segments, or one third of a helical turn. Here, we find that the minimal motif exhibits a reversed morphology with a left-handed tertiary structure mediated by a locally-parallel Holliday junction—the L1 junction. This parallel junction yields a predicted helical groove matching pattern that breaks the pseudosymmetry between tile faces, and the junction morphology further suggests a folding mechanism. We identify a Rule of Thirds by which supramolecular chirality can be programmed through inter-junction DNA segment length. These results underscore the role that global topological forces play in determining local DNA architecture and ultimately point to an under-explored class of self-assembling, chiral nanomaterials for topological processes in biological systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1977

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

Chi, J.-Y.↗