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All sources NASA NTRS DOE OSTI

DOE OSTI2024

A high-order Shifted Interface Method for Lagrangian shock hydrodynamics

Here, we present a new method for two-material Lagrangian hydrodynamics, which combines the Shifted Interface Method (SIM) with a high-order Finite Element Method. Our approach relies on an exact (or sharp) material interface representation, that is, it uses the precise location of the material interface. The interface is represented by the zero level-set of a continuous high-order finite element function that moves with the material velocity. This strategy allows to evolve curved material interfaces inside curved elements. By reformulating the original interface problem over a surrogate (approximate) interface, located in proximity of the true interface, the SIM avoids cut cells and the associated problematic issues regarding implementation, numerical stability, and matrix conditioning. Accuracy is maintained by modifying the original interface conditions using Taylor expansions. We demonstrate the performance of the proposed algorithms on established numerical benchmarks in one, two and three dimensions.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2022

Three-dimensional microstructure of a friction stir welded magnesium/steel interface characterized via high-energy synchrotron X-rays

Here, the three-dimensional (3D) microstructure of a friction stir assisted scribe technique (FaST) weld interface consisting of AZ31 magnesium (Mg) alloy and zinc (Zn)-coated DP590 steel was analyzed via synchrotron micro-computed tomography (μ-CT), correlated to synchrotron x-ray diffraction, and electron microscopy. Diffraction assessment of the AZ31/Zn-coated DP590 steel interface revealed the presence of several complex Mg–Zn intermetallic phases and differences in crystalline orientation of the Mg phase at the weld interface. The 3D characterization of the synchrotron μ-CT images of the weld interface revealed: (1) the presence of AZ31 weld nugget material with iron (Fe)-rich particles; (2) the presence of a weld layer at the joining interface with Fe-rich particles; (3) the formation of a thin non-uniform layer between the weld layer and the interface of the scribed DP590 material; and (4) the presence of an Fe–Al-rich intermetallic layer and Fe-rich particles at the interface of the scribed DP590 material. This study also performed a detailed analysis of lump-like features seen in the Zn coating layer at the weld interface. A detailed 3D particle analysis of the Fe-rich particles in the AZ31 weld nugget and the weld layer at the weld interface revealed the presence of several types of particle morphologies (i.e., spherical and irregular).

36 MATERIALS SCIENCE↗

DOE OSTI2021

Direct Optoelectronic Imaging of 2D Semiconductor–3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing voltage drop at this junction is of particularly challenging and important. Despite numerous studies on contact resistance in 2D semiconductors, the exact nature of the buried interface under a 3D metal remains elusive and unclear. Herein, we report the direct observation of 2D semiconductor-metal buried interface using recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS 2 interface are correlated under variety of metal deposition conditions as well as type of metal contacts. We observe that direct evaporation of Au on MoS 2 induces large strain of ~5% in the MoS 2 which coupled with charge transfer leads to degenerate doping of the MoS 2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm measured using local conductance probes. This approach was adopted to investigate MoS 2 -In/Au alloy interface, which records lowest contact resistance of 63 kΩ μm. Overall, our results highlight that the MoS 2 /Metal interface is very sensitive to method of contact making and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

A review of select human-building interfaces and their relationship to human behavior, energy use and occupant comfort

In recent years, research has emerged to quantitatively and qualitatively understand occupants' interactions with buildings. However, there has been surprisingly little research on building interfaces and how their design, context (e.g., location), and underlying logic impact their usability and occupants’ perceived control, as well as the resulting comfort and energy performance. This means that research is needed to better understand how occupants interact with building interfaces in both commercial and residential applications; both applications are important to address as there are many differences in interface types, level of control and understanding, and even expectations of engagement. Herein, this paper provides a cursory review and discussion of select common building interfaces: windows, window shades/blinds, thermostats, and lighting controls. The goal of this paper is to review literature related to these human-building interfaces to explore interface characteristics, current design and use challenges, and relationships between building interfaces and occupants. Human-building interface interactions are complex, more research is needed to understand design, use, and characteristics. Common themes emerged throughout the literature review to explain occupant interactions (or lack of interactions) with building interfaces, which included thermal and visual comfort, ease and access of control, interface/control placement, poor interface/control design, lack of understanding, and social-behavioral dynamics.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2023

First-principles study of interfaces in Al/SiC metal-matrix composite system

In this work, first-principles calculations were performed on the interfaces between Al and SiC, which is a widely used strengthening agent in aluminum metal-matrix-composites (Al/MMC). C-terminated interfaces have much larger work of adhesion than Si-terminated interfaces, indicating that the former has much stronger interfacial bonding. The electron localization function shows that the chemical bonding between Al and C has a strong covalent character, while the bonding between Al and Si is largely metallic. As a result of the vastly different chemical bonding, the work of adhesion for C-terminated interfaces increases with the number of dangling bonds at the interface, while the opposite trend was observed for Si-terminated interfaces. Additionally, the interface energy for Si-terminated interfaces is comparable to that for C-terminated interfaces, suggesting both types of terminations can coexist in the Al/SiC system.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Interface microstructure effects on dynamic failure behavior of layered Cu/Ta microstructures

Abstract Structural metallic materials with interfaces of immiscible materials provide opportunities to design and tailor the microstructures for desired mechanical behavior. Metallic microstructures with plasticity contributors of the FCC and BCC phases show significant promise for damage-tolerant applications due to their enhanced strengths and thermal stability. A fundamental understanding of the dynamic failure behavior is needed to design and tailor these microstructures with desired mechanical responses under extreme environments. This study uses molecular dynamics (MD) simulations to characterize plasticity contributors for various interface microstructures and the damage evolution behavior of FCC/BCC laminate microstructures. This study uses six model Cu/Ta interface systems with different orientation relationships that are as- created, and pre-deformed to understand the modifications in the plasticity contributions and the void nucleation/evolution behavior. The results suggest that pre-existing misfit dislocations and loading orientations (perpendicular to and parallel to the interface) affect the activation of primary and secondary slip systems. The dynamic strengths are observed to correlate with the energy of the interfaces, with the strengths being highest for low-energy interfaces and lowest for high-energy interfaces. However, the presence of pre-deformation of these interface microstructures affects not only the dynamic strength of the microstructures but also the correlation with interface energy.

42 ENGINEERING↗

DOE OSTI2025

Directing the adsorption and assembly of laponite nano-discs at oil–water interfaces

Achieving tunable controls on the adsorption and self-assembly of nanoscale building blocks at immiscible fluid interfaces is essential for synthesizing advanced materials, stabilizing emulsions, and the sustainable storage and recovery of fluids. Although extensive efforts have been directed toward resolving the assembly of spherical nanoparticles at water–hydrocarbon interfaces, 2D nanoparticles have received far less attention. In this study, we developed novel controls to direct the adsorption and assembly of 2D laponite nano-discs (diameter = ∼30 nm and thickness = ∼1 nm) at water–heptane interfaces using traces of sodium dodecyl sulfate (SDS) surfactant, demonstrated by advanced in situ small-angle X-ray scattering, atomic force microscopy, spinning drop tensiometer measurements and molecular dynamics simulations. The results show that SDS surfactant displaces the adsorbed laponite nano-discs from the interface toward the aqueous phase. The extent of this displacement increases with SDS concentration such that high SDS concentrations convert laponite-rich interfaces to SDS-rich interfaces free of laponite nano-discs. This transformation is associated with significant alterations in the rheological and nanomechanical properties of the host interface. In this context, reduction in interfacial tension and interfacial stiffness and an increase in the interfacial deformation is observed on increasing the SDS concentration from 0 to 0.1 wt%. The displacement of laponite nano-discs from the interface is driven by strong electrostatic interactions between the hydrophilic SDS group and interfacial water molecules. These studies unlock new insights into the adsorption and assembly of 2D nanoscale particles at water–hydrocarbons interfaces that are relevant for various applications related to energy and environmental science and engineering.

interfacial tension↗

DOE OSTI2024

Parallel Runtime Interface for Fortran (PRIF) Specification (Rev. 0.3)

This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2024

Parallel Runtime Interface for Fortran (PRIF) Specification (Rev. 0.5)

This document specifies an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is primarily responsible for implementing coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, teams and collective subroutines. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF subroutines. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2023

Parallel Runtime Interface for Fortran (PRIF) Design Document (Rev. 0.2)

This design document proposes an interface to support the parallel features of Fortran, named the Parallel Runtime Interface for Fortran (PRIF). PRIF is a proposed solution in which the runtime library is responsible for coarray allocation, deallocation and accesses, image synchronization, atomic operations, events, and teams. In this interface, the compiler is responsible for transforming the invocation of Fortran-level parallel features into procedure calls to the necessary PRIF procedures. The interface is designed for portability across shared- and distributed-memory machines, different operating systems, and multiple architectures. Implementations of this interface are intended as an augmentation for the compiler's own runtime library. With an implementation-agnostic interface, alternative parallel runtime libraries may be developed that support the same interface. One benefit of this approach is the ability to vary the communication substrate. A central aim of this document is to define a parallel runtime interface in standard Fortran syntax, which enables us to leverage Fortran to succinctly express various properties of the procedure interfaces, including argument attributes.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2024

Parallel Runtime Interface for Fortran (PRIF) Specification (Rev. 0.4)

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1992

Overall contact conductance of a prototype Parallel Fin Thermal Interface

The Parallel Fin Thermal Interface has been developed and tested as an orbital replaceable interface. The interface consists of two identical plates with pairs of opposing parallel straight fins. Each pair of fins is sandwiched between two insert plates pressed against the fins with enough force for good heat transfer through the interface. Two prototype parallel fin interfaces were built (Model 140 and 380) with different fin and insert plate dimensions. Samples of the interfacing surfaces were found to have roughness values ranging from 22 to 35 microinches. Overall interface conductance (Hc) values of 46.7 to 74.2 Btu/hr sq ft-F were obtained for the 140 model in vacuum with an interface pressure from 18.8 to 37.5 psi, respectively. The Model 380 exhibited Hc values from 31.2 to 46.8 Btu/hr sq ft-F in vacuum, with respective interface pressures of 14.2 and 22.0 psi. Several correlations were found to agree with test data to within 20 percent.

Stobb, C. A.↗

NASA NTRS1992

An interface tracking method applied to morphological evolution during phase change

The focus of this work is the numerical simulation of interface motion during solidification of pure materials. First, the applicability of the oft-used quasi-stationary approximation for interface motion is assessed. It is seen that such an approximation results in poor accuracy for nontrivial Stefan numbers. Solution of the full set of equations including grid movement terms yields close agreement with analytical results. Next, a generic interface tracking procedure is designed, which overcomes restrictions of single-valuedness of the interface imposed by commonly used mapping methods. This method incorporates with ease interface phenomena involving curvature, which assume importance at the smaller scales of a deformed interface. The method is then applied to study the development of a morphologically unstable phase interface. The issue of appropriate scaling has been addressed. The Gibbs-Thomson effect for curved interfaces has been included. The evolution of the interface, with the competing mechanisms of undercooling and surface tension is found to culminate in tip-splitting, cusp formation and persistent cellular development.

Shyy, W.↗

NASA NTRS1995

Growth rates and interface shapes in germanium and lead tin telluride observed in-situ, real-time in vertical Bridgman furnaces

Using the advanced technology developed to visualize the melt-solid interface in low Prandtl number materials, crystal growth rates and interface shapes have been measured in germanium and lead tin telluride semiconductors grown in vertical Bridgman furnaces. The experimental importance of using in-situ, real time observations to determine interface shapes, to measure crystal growth rates, and to improve furnace and ampoule designs is demonstrated. The interface shapes observed in-situ, in real-time were verified by quenching and mechanically induced interface demarcation, and they were also confirmed using machined models to ascertain the absence of geometric distortions. Interface shapes depended upon the interface position in the furnace insulation zone, varied with the nature of the crystal being grown, and were dependent on the extent of transition zones at the ends of the ampoule. Actual growth rates varied significantly from the constant translation rate in response to the thermophysical properties of the crystal and its melt and the thermal conditions existing in the furnace at the interface. In the elemental semiconductor germanium the observed rates of crystal growth exceeded the imposed translation rate, but in the compound semiconductor lead tin telluride the observed rates of growth were less than the translation rate. Finally, the extent of ampoule thermal loading influenced the interface positions, the shapes, and the growth rates.

Barber, P. G.↗

NASA NTRS2011

Digital Interface Board to Control Phase and Amplitude of Four Channels

An increasing number of parts are designed with digital control interfaces, including phase shifters and variable attenuators. When designing an antenna array in which each antenna has independent amplitude and phase control, the number of digital control lines that must be set simultaneously can grow very large. Use of a parallel interface would require separate line drivers, more parts, and thus additional failure points. A convenient form of control where single-phase shifters or attenuators could be set or the whole set could be programmed with an update rate of 100 Hz is needed to solve this problem. A digital interface board with a field-programmable gate array (FPGA) can simultaneously control an essentially arbitrary number of digital control lines with a serial command interface requiring only three wires. A small set of short, high-level commands provides a simple programming interface for an external controller. Parity bits are used to validate the control commands. Output timing is controlled within the FPGA to allow for rapid update rates of the phase shifters and attenuators. This technology has been used to set and monitor eight 5-bit control signals via a serial UART (universal asynchronous receiver/transmitter) interface. The digital interface board controls the phase and amplitude of the signals for each element in the array. A host computer running Agilent VEE sends commands via serial UART connection to a Xilinx VirtexII FPGA. The commands are decoded, and either outputs are set or telemetry data is sent back to the host computer describing the status and the current phase and amplitude settings. This technology is an integral part of a closed-loop system in which the angle of arrival of an X-band uplink signal is detected and the appropriate phase shifts are applied to the Ka-band downlink signal to electronically steer the array back in the direction of the uplink signal. It will also be used in the non-beam-steering case to compensate for phase shift variations through power amplifiers. The digital interface board can be used to set four 5-bit phase shifters and four 5-bit attenuators and monitor their current settings. Additionally, it is useful outside of the closed-loop system for beamsteering alone. When the VEE program is started, it prompts the user to initialize variables (to zero) or skip initialization. After that, the program enters into a continuous loop waiting for the telemetry period to elapse or a button to be pushed. A telemetry request is sent when the telemetry period is elapsed (every five seconds). Pushing one of the set or reset buttons will send the appropriate command. When a command is sent, the interface status is returned, and the user will be notified by a pop-up window if any error has occurred. The program runs until the End Program button is depressed.

Smith, Amy E.↗

NASA NTRS2012

mREST Interface Specification

mREST is an implementation of the REST architecture specific to the management and sharing of data in a system of logical elements. The purpose of this document is to clearly define the mREST interface protocol. The interface protocol covers all of the interaction between mREST clients and mREST servers. System-level requirements are not specifically addressed. In an mREST system, there are typically some backend interfaces between a Logical System Element (LSE) and the associated hardware/software system. For example, a network camera LSE would have a backend interface to the camera itself. These interfaces are specific to each type of LSE and are not covered in this document. There are also frontend interfaces that may exist in certain mREST manager applications. For example, an electronic procedure execution application may have a specialized interface for configuring the procedures. This interface would be application specific and outside of this document scope. mREST is intended to be a generic protocol which can be used in a wide variety of applications. A few scenarios are discussed to provide additional clarity but, in general, application-specific implementations of mREST are not specifically addressed. In short, this document is intended to provide all of the information necessary for an application developer to create mREST interface agents. This includes both mREST clients (mREST manager applications) and mREST servers (logical system elements, or LSEs).

McCartney, Patrick↗

NASA NTRSDate not supplied

Surface Systems and Interface Standardization

Space exploration on planetary surfaces will require the use of various surface systems which will likely need to interface with one another. These systems must communicate and share data, as well as distribute power and transfer fluids for sustainable surface operations. Such systems can range from landers, surface habitats, mobility systems, cargo, and In-Situ Resource Utilizations (ISRUs). Previous and current programs have developed space interoperability standards that help aid in reducing potential risks of interface integration. One example of this is the International Deep Space Interoperability Standards (IDSIS) which focuses on deep space exploration. A goal of the Artemis program is to develop a sustained human presence on the lunar surface that would be a training ground for future Mars exploration. Therefore, it will be beneficial to identify interface standards between the surface assets which will help mitigate risk and reduce complexity in the harsh environments of space exploration. A key contribution to sustainability is commonality between hardware and software interfaces. Generic interfaces for data, power, and fluids will reduce risk, promote interoperability, and define standard interfaces across surface exploration projects and programs. Standardized interfaces would be advantageous for improving efficiency and reducing overall complexity, which are critical considerations for future space exploration. Furthermore, it will provide cost reductions to the Artemis programs over their life cycle (in Operations & Maintenance (O&M) and Logistics). Unique proprietary interfaces if considered or allowed would not only increase complexity but also add cost to the programs. Of course, understanding what will work and not work effectively in these unique environments such as the lunar surface is important. These unique environments require much needed intelligent design, prototyping, comprehensive testing, and field experience, utilizing consensus on common interface solutions.

Jaime Gomez↗

NASA NTRS2022

Space Induced Discharge Model to Be Used on Interface Circuit Vulnerability Assessment

Charging can occur in space due to plasma and high energy particles. Charging is especially severe in certain earth orbits such as geostationary orbit, medium earth orbit and highly inclined orbit. A spacecraft that travels to other planets such as Jupiter also encounters high level of charging due to Jupiter’s radiation belt. The major concern for spacecraft operation due to charging is the survival of sensitive electrical circuits. Dielectrics and floating metal can charge up and discharge onto interface circuits. The electrical circuits need to be evaluated for survival from the electrostatic-discharge (ESD) threat. Both ESD induced upset and damage need to be assessed. The interface circuits are often located inside a shielded unit in the spacecraft structure or a shielded vault with sufficient radiation shielding to avoid surface and internal charging. The materials external to the highly shielded area can charge up and discharge onto wires that can directly dissipate the ESD onto the interface circuits. Figure 1 shows a possible discharge mechanism onto the interfacing circuits. If the wire has an external shield or a coaxial line, some or most of the discharge can flow on the shield to chassis ground. There is always coupling from external discharge. If the wire has no shield, the discharge flows onto the interface circuit. Fig. 1 Possible discharge paths onto the interface circuits. The purpose of this article is to address how to model the ESD threat to be used as the discharge source onto the interface circuit based on the electron beam test data. Different models are needed for different impedances associated with the interface circuits. Once those models are derived, one needs to analyze the interface circuit with the corresponding model using an electrical simulation tool. Then, the circuit’s front-end components can be assessed for damage and upset. Upset is highly dependent on the circuit operation and system requirements, and thus it is not addressed any further. Damage of electrical parts is often rated under Human-Body-Model (HBM) ESD. One can utilize this industry-wide available information to assess the damage vulnerability due to space discharges. However, the HBM waveform does not always match the discharge waveform. To estimate the damage vulnerability of the circuit and set margin, one needs to compare the equivalent energy delivered to the victim between a HBM discharge and the results from an ESD source model based on actual discharges. This paper presents such a comparison for a few select cases.

Xie, Julie↗