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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Comparative analysis of temperature dependent properties of commercial nuclear fuel pellet and surrogates undergoing cracking: A review

A variety of normal and accident scenarios can generate thermal stresses enough to cause cracking in light water reactor (LWR) fuel. To better understand this behavior, cracking experiments have been carried out to induce thermal gradients in fuel pellets via induction heating and direct resistance heating. In this study, Ceria (CeO 2 ) and yttria stabilized zirconia (YSZ) pellets were chosen as a surrogate fuel material for uranium dioxide (UO 2 ). Induction heating was done using copper coils and molybdenum susceptors which heated the surrogates to a threshold temperature that is sufficiently high for the fuel material to conduct current. Thereafter, direct resistance heating was achieved by passing current through the specimen using a DC power supply to introduce volumetric heating to replicate reactor operating conditions. Simultaneous real-time dual imaging of the ceria pellet surface has been designed using optical and infra-red camera system to capture images of cracks and full-field temperature gradients on pellet. It was observed that YSZ pellets need a much higher voltage-current for volumetric heating and do not exhibit the cracking pattern as ceria and UO 2 , hence YSZ was ruled out for further consideration. Ceria was found to be an appropriate surrogate for UO 2 . Furthermore, the experimental set up and test conditions demand the need to primarily understand the thermo-physical, mechanical and optical properties of UO 2 and the surrogates. Thus, it is essential to have an in-depth knowledge about the various temperature dependent properties of UO 2 and CeO 2 for establishing a comparative analysis between the surrogate and UO 2 for conducting experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2020

AMPPED LDRD: Advanced Models of the Physics & Phenomena of Electrical Discharge.

This Laboratory Directed Research and Development (LDRD) project aimed at addressing an unmet need for physics-based models that enable prediction of electrical breakdown in the presence of high voltage gradients and real-world environments. This project focused on understanding coupled plasma-surface feedback phenomena critical to electrical discharge processes and design of breakdown voltages, breakdown times, and breakdown paths. New secondary electron emission and coupled plasma-surface measurement methods and models were developed. Highly reproducible discharge experiments were developed to provide current-voltage data as a function of time, and methods were developed to condition electrodes for predictable discharge. To assess plasma-surface feedback mechanisms, new surface physics capabilities, including measurement systems for local and global photoemission yield and ion-induced secondary electron emission yield were developed. Discharge models were developed to incorporate these yields for predicting discharge behavior to understand influence of surface physics on discharge current and time evolution, and methods to accelerate these simulations were demonstrated. A key finding was that the initiation process of a non-vacuum discharge appears highly dependent on photoemission at the cathode. Advanced diagnostics were developed, including spatial electrical field imaging, spectroscopy of plasmas, and high-speed imaging of discharge event s in metal and dielectric environments. These diagnostics and improved electrical models are a step toward enabling quantitative design margins, assurance of safety architectures, and implementation of novel materials and technologies for wide ranging energy and electronics applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Design and Fabrication of a Thyristor Using Ion Implantation of Anode and Cathode

A thyristor is a solid-state semiconductor switch made up of four alternating p and n type layers. When the switch is turned on by a small pulse, current can flow as long as the device stays on. When the voltage drops below the turn on level or the current reverses, the switch will turn off. Thyristors only allow current to flow in one direction. One of the benefits of a thyristor device is in its capacity to conduct large voltages with a small device and a small turn-on pulse requirement. Another distinguishing feature of thyristors compared to other semiconductor devices is that it can only be in the on or off state, there’s no in-between state for the device to exist within. These properties make thyristors very useful as switch devices, especially in applications where current flow is only needed in one direction and could potentially be damaging in the opposite direction. Currently, thyristors are most commonly used to control very high power loads and they are available commercially in many designs to control different amounts of current.

42 ENGINEERING↗
DOE OSTI2022

A Fast-Response High-Accuracy Overvoltage Protection Circuit for Soft-Switching Current-Source Converters

Although voltage-source converters (VSCs) have been a focus of research for decades and are widely applied in numerous applications, they face great challenges in short-circuit failures, high dv/dt and electromagnetic interference (EMI), especially using wide bandgap devices. Instead, current-source converters (CSCs) are attracting increasing attention in recent years owing to their friendliness to short-circuit faults, improved EMI, etc. For CSCs, overvoltage is the most catastrophic failure since the semiconductor devices can hardly withstand an overvoltage for a short pulse. In this paper, a fast-response high-accuracy overvoltage protection (OVP) circuit is proposed to protect CSCs from overvoltage damage. It also features a small form factor, good noise-immunity, friendly retrofit capability, and no need for active switches. In this paper, the operating principle and design guideline of the proposed OVP circuit is introduced. Its effectiveness is validated in soft-switching solid-state transformer (S4T) at 500 V. In experiments, the voltage detection error of less than 5% and a propagation delay of fewer than 400 ns have been achieved.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Membrane Pretreatment and Cell Conditioning for Proton Exchange Membrane Water Electrolysis

As the research community studying proton exchange membrane water electrolysis (PEMWE) grows, it is important to develop methods that achieve transparent, reproducible research. Reproducibility of performance and durability is a challenge facing the PEMWE field, as the published literature includes a wide spread of results obtained with nominally similar materials. Prior round-robin performance benchmarking efforts [1] have identified inadequate cell conditioning as a major source of variation in apparent cell performance. Inadequate pre-treatment and conditioning can lead to instability in initial performance and adds ambiguity to durability measurements. However, excessively prolonged conditioning procedures limit the throughput of testing and the pace of research. Pretreatment and conditioning methods vary significantly across the research literature, but little systematic investigation is available into the mechanisms of these procedures or how procedural differences may impact results. This presentation will discuss investigations into the effects of membrane pre-treatment and operating procedures during cell conditioning on initial performance and catalyst-specific accelerated stress tests, with the aim of recommending procedures to enable clear, reproducible, and high-throughput research. Methods investigated include the use of hydrogen peroxide, acids, and hydration at elevated temperature for membrane pretreatment, and conditioning procedures such as current or voltage holds and cycling. The investigations cover both the impacts of these procedures on cell performance and stability as well as underlying mechanisms and processes taking place in the cell materials.

cell↗
DOE OSTI2023

Integration of Nuclear Material Accounting Data and Process Monitoring Data for Improvement on Detection Probability in Safeguarding Electrochemical Processing Facilities (Final Technical Report)

The KAERI advanced spent fuel conditioning process (ACP) process is a critical component of the US- South Korean nuclear cooperation and the following “123 Agreement.” Its development has received considerable attention in both countries. The ACP is an electrochemical processing (pyroprocessing) that recycles over 96% of the used nuclear fuel (UNF). It is also intrinsically proliferation-resistant in theory. In normal operation, the U/TRU product is very hot radiologically. In addition, the Cm provides a high level of spontaneous neutrons, making the product unsuitable for weapon use. However, as pointed in some study, “the need for safeguards to protect against the diversion and misuse of separated plutonium applies essentially equally to all grades of plutonium.” As pointed by many studies, the well-established traditional Nuclear Material Accounting (NMA) approach cannot be directly applied to electrochemical processing because of the lack of an input accountability tank, the non-continuous material flow, and the unsatisfactory level of confidence in sampling methods. Therefore, nuclear safeguards remain a grand challenge in the developing of commercial electrochemical separations facilities, especially around the heart of such facilities, the electrorefiner (ER) systems. In contrast to NMA data, process monitoring (PM) data is normally an indirect measurement of the SNM and is acquired much more frequently. In a broad sense, PM includes monitoring by various types of equipment, e.g. radiation detectors, cameras, voltage, current sensors. Because it is already being collected by the operator, the additional cost to safeguards is low. It has long been believed that PM data can supplement NMA data and help improve safeguards, although the benefits are hard to quantify. The U.S. DOE’s Material Protection, Accounting, and Control Technology (MPACT) campaign has made substantial investments into innovative PM sensor technology and predictive model development for real- or near real-time measurement and prediction of molten salt density and level, salt composition and actinide concentration especially Pu, the cell voltage, and the cell current to supplement traditional NMA. For aqueous-based reprocessing facilities, it is reported that PM, integrated with traditional NMA, have a high detection probability for specific diversions. For electrochemical reprocessing, preliminary studies have shown that PM data can support traditional NMA in various ways by providing a basis to estimate some of the in-processing nuclear material inventories. Despite early success, further studies on fusion of PM data and NMA data are still needed, which is the goal of this proposed work.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Atomic-Scale Structural Mapping of Active Sites in Monolayer PGM-Free Catalysts by Low-Voltage 4D-STEM

Two-dimensional (2D) materials have attracted a large amount of attention in both basic and applied fields, and scanning transmission electron microscopy (STEM) is often uniquely well-suited for characterizing the atomic-scale structure of these materials [1-4]. As a result, STEM is poised to significantly impact progress on platinum group metal (PGM)-free catalysts, which are currently under intense development to enable low-cost, commercially viable hydrogen fuel cells [5]. While recent advancements have resulted in fuel cell performance comparable to Pt catalysts by some measures [6], cell durability remains a significant challenge, limiting practical applications [7]. Catalytically active sites in PGM-free materials are proposed to be FeN4 complexes embedded in a graphene lattice (Fig. 1b) within layered or other larger materials, but this is still under debate largely due to the range of potential actives sites predicted by computational methods and lack of methods for directly validating these models [5]. Fundamental insights into the atomic structure and resulting degradation pathways of proposed active sites are therefore needed to fully understand and control cell performance and durability [6].2D materials typically make ideal samples for STEM, but those within PGM-free catalysts present additional challenges since these materials are often defect-rich, with a high density of edges, dopant atoms, etc., which significantly increase susceptibility to beam damage at standard operating voltages. This makes analysis of potential FeN4 active sites particularly challenging, since a large proportion of Fe exists at edge sites where beam-induced atomic displacements can prohibit high-resolution structural characterization [6]. Conventional dark-field imaging compounds this problem by producing less signal for a given dose and being less sensitive to light elements than dose-efficient phase contrast imaging techniques such as those enabled by four-dimensional (4D)-STEM [8-10] (Fig. 1a). Consequently, active site structural analysis is often left to methods such as low-resolution imaging combined with quantum chemical calculations [6], which hinders accurate determination of reaction and degradation mechanisms.Here, we demonstrate direct atomic-scale structural mapping of FeN4 sites by performing low-voltage 4D-STEM on a model PGM-free catalyst system with many exposed monolayer regions. To accomplish this, we pair a 30 keV aberration-corrected probe with a fast pixelated detector that has optimal performance at low beam voltages [11]. This enables us to simultaneously image light and heavy elements with high signal-to-noise by center-of-mass analysis (Fig. 1c) while minimizing beam-induced atomic displacements at sensitive sites. The monolayer nature of these materials additionally allows for experimental validation by direct comparison with multislice simulations [12] of model structures (Fig. 1d-e). This work demonstrates how low-voltage 4D-STEM will provide new insights into the atomic-scale structure and degradation mechanisms of active sites in PGM-free catalysts, facilitating the development of low-cost hydrogen fuel cells and other energy conversion technologies in the future [13].

Zachman, Michael↗
DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗
DOE OSTI2022

Ionic Control over Ferroelectricity in 2D Layered van der Waals Capacitors

The van der Waals layered material CuInP 2 S 6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against the electric field through Cu ion migration, a negative-capacitance regime, and reversible extraction of Cu ions. At the heart of these characteristics lies the high mobility of Cu ions, which also determines the spontaneous polarization. Therefore, Cu migration across the lattice results in unusual ferroelectric behavior. Here, we demonstrate how the interplay of polar and ionic properties provides a path to ionically controlled ferroelectric behavior, achieved by applying selected DC voltage pulses and subsequently probing ferroelectric switching during fast triangular voltage sweeps. Using current measurements and theoretical calculations, we observe that increasing DC pulse duration results in higher ionic currents, the buildup of an internal electric field that shifts polarization loops, and an increase in total switchable polarization by ~50% due to the existence of a high polarization phase which is stabilized by the internal electric field. Apart from tuning ferroelectric behavior by selected square pulses, hysteretic polarization switching can even be entirely deactivated and reactivated, resulting in three-state systems where polarization switching is either inhibited or can be performed in two different directions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Influence of Water Transport Across Microscale Bipolar Interfaces on the Performance of Direct Borohydride Fuel Cells

Direct borohydride fuel cells (DBFCs) can operate at double the voltage of proton exchange membrane fuel cells (PEMFCs) by employing an alkaline NaBH 4 fuel feed and an acidic H 2 O 2 oxidant feed. The pH-gradient-enabled microscale bipolar interface (PMBI) facilitates the creation and maintenance of an alkaline environment at the anode and an acidic environment at the cathode for the borohydride oxidation and peroxide reduction reactions. However, given the need to dissociate water at the interface to ensure ionic conduction, PMBI can be efficient only when anion exchange ionomer (AEI) moieties enable fast water transport for autoprotolysis. Herein, a series of polynorbornene-based AEIs with a range of water uptake values are examined to unravel the optimum water uptake required to enable high performance DBFCs. The DBFC with PMBI configuration containing the optimal AEI composition delivers a current density of 302 mA cm –2 at 1.5 V and a peak power density of 580 mW cm –2 at 1 V. This AEI composition exhibits high hydroxide ionic conductivity of 90.7 mS cm –1 at 80 °C with an IEC of 2.01 mequiv g –1 and demonstrates impressive chemical stability by retaining 98.75% of its initial ionic conductivity after immersion into anolyte (3 M KOH and 1.5 M NaBH 4 ) at 70 °C for 536 h.

25 ENERGY STORAGE↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Portable Soft X-Ray Diagnostics for Transformative Fusion-Energy Concepts (Final Scientific/Technical Report)

A time-gated extreme-ultraviolet spectrometer was fielded on a transformative fusion-energy device, FuZE-Q at Zap Energy, Inc. (ZEI), a sheared-flow-stabilized z-pinch. Plasma emission spectra were collected in the 5–40 nm wavelength (30–250 eV) range. This was the first time a direct-vacuum-coupled, high-voltage, deposition-sensitive diagnostic was fielded on this type of dense-plasma fusion device. To overcome the special challenges of such a coupling, a unique, highly effective implementation was developed, with fast (10-ns risetime) pulsed high-voltage electronics and a multi-stage differential pumping system. This enabled the UNR spectrometer to collect three independently timed spectra per FuZE-Q shot while also protecting sensitive internal components. Analysis of line emission identified oxygen (N-, C-, B-, Be-, Li-, and He-like O), peaking in intensity shortly after maximum current (>500 kA). Spectral databases and collisional-radiative modeling have been used to identify impurities and estimate edge-plasma temperatures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly deposited on metal tape

We develop an easily implementable yet effective process to achieve high power conversion efficiency in newly-developed flexible single-crystal-like GaAs thin-film photovoltaic solar cells on cheap metal tape. We study various techniques on the fabricated devices to passivate the defect states associated with dangling bonds at low-angle grain boundaries (LA-GBs) existing in the single-crystal-like GaAs material. We report that sulfur by trioctylphosphine sulfide (TOP:S) solution treatment can partially but effectively passivate the defect states at the LA-GBs to increase all the solar cell performance parameters of open-circuit voltage VOC (33.2%), short-circuit current JSC (19.5%), and fill factor FF (25.8%), resulting in the improvement of the power conversion efficiency more than double. The material and device characterizations and numerical modeling are performed to propose a mechanism, also suggesting that the power conversion efficiency higher than 20%, which is an important target milestone in emerging solar cell technologies, can be achieved. This work presents the first effective passivation of the bulk defects in GaAs at the device level and can also offer a solution for other photonic and electronic devices using non-single-crystalline GaAs films for flexible electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Novel Perovskite Semiconductors for the Detection of Special Nuclear Material

Special nuclear material detection using portable, highly efficient detectors is of paramount importance to national security and environmental monitoring. Current neutron detectors, including gas proportional counters and scintillators, are not suitable for discrete or portable monitoring due to size, weight, and power limitations. For example, 3 He gas proportional detectors have significant drawbacks, including long absorption lengths, high voltage requirements, and dependence on the availability of 3 He. The goal of this project is to synthesize a novel, boron-based perovskite semiconductor crystals to create a more efficient and more portable neutron detector. This innovative material will lead to a significant decrease in power and size requirements with higher operating temperatures than other traditional solid-state detectors. Directly incorporating 10 B eliminates the need for a conversion layer and leads to high neutron absorption coefficients. In this seedling project, we used inverse temperature crystallization with boron precursors to create CH 3 NH 3 PbI 3-x (BF 4 ) x . The crystals were analyzed with X-ray diffraction, but the results were inconclusive. Future work will focus on tailoring the solution growth and selecting appropriate solvents and precursors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Fast ion studies in the extended high-performance high β P plasma on EAST

Comprehending and optimizing fast ion behaviors is critical for the enhancement of performance in Experimental Advanced Superconducting Tokamak (EAST). This study explores the potential benefits of several factors that can improve the fast ion confinement. First, experiments show the change in the direction of the NBI2 from counter-I p to co-I p leads to a significant reduction in fast ion losses. TRANSP/NUBEAM simulation and tomography results based on fast-ion D-alpha measurements reveal that after the neutral beam injection (NBI) upgrade, the beam ion prompt loss is reduced by approximately 50%. Second, the upgraded ion cyclotron resonant frequency (ICRF) antenna at the N-port features twice the coupling resistance of the original antennas at EAST. This improved ICRF power coupling has enhanced the synergistic heating effect of NBI + ICRF, where the ICRF wave field accelerates beam ions at the harmonics. Experiments demonstrate that NBI + ICRF synergistic not only enhances plasma neutron yield and β P , but also accelerates beam ions to hundreds of keV. Further, the electron density and the neutral beam voltage have been optimized to reduce the fast ion slowing-down time and beam ion losses. Experimental and simulation results indicate that increasing the electron density reduces beam ion losses and enhances the bootstrap current fraction. While higher beam voltage results in a slight decrease in beam power absorption, it can increase the fraction of bootstrap current. With the understanding of these optimization of fast ion confinement, experiments have demonstrated fully non-inductive operation at high density (n e /n G ∼ 0.67, β P ∼ 3.1, β N ∼ 2.1, H 98,y2 ∼ 1.2) even without the support of co-I p beam NBI2. This investigation presents a potential regime to enhance fast ion confinement and extend performance in the high β P plasma for future experiments.

EAST tokamak↗
DOE OSTI2024

Enhancing Direct Electrochemical CO 2 Electrolysis by Introducing A-Site Deficiency for the Dual-Phase Pr(Ca)Fe(Ni)O 3-δ Cathode

High-temperature CO 2 electrolysis via solid oxide electrolysis cells (CO 2 –SOECs) has drawn special attention due to the high energy convention efficiency, fast electrode kinetics, and great potential in carbon cycling. However, the development of cathode materials with high catalytic activity and chemical stability for pure CO 2 electrolysis is still a great challenge. In this work, A-site cation deficient dual-phase material, namely (Pr 0.4 Ca 0.6 ) x Fe 0.8 Ni 0.2 O 3-δ (PCFN, x = 1, 0.95, and 0.9), has been designed as the fuel electrode for a pure CO 2 –SOEC, which presents superior electrochemical performance. Among all these compositions, (Pr 0.4 Ca 0.6 ) 0.95 Fe 0.8 Ni 0.2 O 3-δ (PCFN95) exhibited the lowest polarization resistance of 0.458 Ω cm 2 at open-circuit voltage and 800 °C. The application of PCFN95 as the cathode in a single cell yields an impressive electrolysis current density of 1.76 A cm -2 at 1.5 V and 800 °C, which is 76% higher than that of single cells with stoichiometric Pr 0.4 Ca 0.6 Fe 0.8 Ni 0.2 O 3-δ (PCFN100) cathode. The effects of A-site deficiency on materials' phase structure and physicochemical properties are also systematically investigated. Such an enhancement in electrochemical performance is attributed to the promotion of effective CO 2 adsorption, as well as the improved electrode kinetics resulting from the A-site deficiency.

30 DIRECT ENERGY CONVERSION↗