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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

RePED 250: A Revolutionary, High Drilling Rate, High-T Geothermal Drilling System and Companion Power Electronics

Geothermal drilling in the United States is drastically slower and more costly than Oil and Gas (O&G) drilling, primarily due to the additional challenges in geothermal wells: hard rock types and high temperatures. The Repetitive Pulsed Electric Drill (250°C) (RePED-250), developed by Tetra Corporation has the potential to change this with a novel electro-crushing technology. RePED-250 releases pulses of electricity through the rock, which causes it to break in tension, instead of compression like conventional rotary drilling. The tensile strength of hard rocks like granite is only ~5% of their compressive strength, requiring less energy, time, and wear on the bit compared to conventional drilling. The RePED drill bit has no moving parts, uses drilling mud to remove rock fragments, and uses standard drill pipe, enabling a direct transition from conventional drilling systems. The objective of this project is to move RePED technology towards commercial readiness for high-temperature geothermal applications. This involves: 1) Creating high-temperature, high power electronic components for the RePED drill capable of operating at the high temperatures of a geothermal well. The target is a 250°C ambient environment. Specifically, capacitors, high voltage switches, and a downhole generator capable of generating the necessary power. 2) Demonstrating RePED’s effectiveness drilling through hard rock (granite) and examining its pathway to commercialization and effect on the US geothermal market. Work on this project has led to significant improvement over the state-of-the-art for all the examined electronics, through design, modeling, and testing of these novel components, though some additional development is still needed to deploy these high-temperature parts in a geothermal well. Besides their use in RePED-250, each component has applications in other industries where the stability of electronics at high-temperature is needed. To address the second barrier to commercialization, a 9” hole was drilled through a sample block of granite, demonstrating the tool’s effectiveness in hard rock. The team investigated RePED-250’s effect on well cost and the geothermal industry, through various techno-economic models described in the report.

15 GEOTHERMAL ENERGY↗
NASA NTRS1977

The influence of autoionization accompanied by excitation on dielectronic recombination and ionization equilibrium

In the process of dielectronic recombination, the doubly excited state formed by radiationless capture may autoionize preferentially into an excited state of the recombining ion. This additional autoionization process has not been discussed in previous treatments of dielectronic recombination. The dielectronic recombination rates for certain nonhydrogenic Fe ions, although still larger than the direct radiative recombination rates, are found to be substantially reduced by the inclusion of the additional autoionization rate in the branching ratio for the stabilizing radiative transition. Consequently, the temperatures of maximum equilibrium abundance are significantly lower than those predicted by recent calculations. Finally, the radiative energy loss rate coefficients are calculated for radiation processes involving electron Fe-ion collisions in high-temperature plasmas. Electron impact excitation of resonance line radiation is the dominant radiative cooling mechanism in steady-state plasmas at temperatures where ions with bound electrons are abundant. However, it is found that the radiation emitted during dielectronic recombination can be more important than direct recombination radiation and bremsstrahlung.

Jacobs, V. L.↗
NASA NTRS1979

Containerless high-temperature calorimeter

Samples are heated by electron bombardment in high-temperature calorimeter that operates from 1,000 to 3,600 C yet consumes less that 100 watts at temperatures less than 2,500 C. Contamination of samples is kept to minimum by suspending them from wire in vacuum chamber. Various sample slopes such as wires, dishs, spheres, rods, or irregular bodies can be accommodated and only about 100 nq of samples are needed for accurate measurements.

Lacy, L. L.↗
NASA NTRS2023

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementation of durable 500 °C high-frequency 4H-SiC bipolar junction transistors (BJTs) . Specifically, p -type ohmic contacts have been demonstrated on a 0.25 μm-thick p -type homoepitaxial layer of doping 8 x 10 18 ± 4 x 10 18 cm -3 . Preliminary current-voltage characteristics of fabricated BJTs are presented.

4H-SiC BJT↗
NASA NTRS1983

High-temperature optically activated GaAs power switching for aircraft digital electronic control

Gallium arsenide high-temperature devices were fabricated and assembled into an optically activated pulse-width-modulated power control for a torque motor typical of the kinds used in jet engine actuators. A bipolar heterojunction phototransistor with gallium aluminum arsenide emitter/window, a gallium arsenide junction field-effect power transistor and a gallium arsenide transient protection diode were designed and fabricated. A high-temperature fiber optic/phototransistor coupling scheme was implemented. The devices assembled into the demonstrator were successfully tested at 250 C, proving the feasibility of actuator-located switching of control power using optical signals transmitted by fibers. Assessments of the efficiency and technical merits were made for extension of this high-temperature technology to local conversion of optical power to electrical power and its control at levels useful for driving actuators. Optical power sources included in the comparisons were an infrared light-emitting diode, an injection laser diode, tungsten-halogen lamps and arc lamps. Optical-to-electrical power conversion was limited to photovoltaics located at the actuator. Impedance matching of the photovoltaic array to the load was considered over the full temperature range, -55 C to 260 C. Loss of photovoltaic efficiency at higher temperatures was taken into account. Serious losses in efficiency are: (1) in the optical source and the cooling which they may require in the assumed 125 C ambient, (2) in the decreased conversion efficiency of the gallium arsenide photovoltaic at 260 C, and (3) in impedance matching. Practical systems require improvements in these areas.

Berak, J. M.↗
NASA NTRS2001

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗
NASA NTRS1989

Electron temperatures in the high-excitation zones of planetary nebulae

Airborne infrared and ground-based UV observations of the forbidden Ne-V 24.3-micron and forbidden Ne-V 3426-A fine-structure lines of 17 planetary nebulae are discussed. Significantly higher Ne-V than O-IV temperatures are found for Hu 1-2 and NGC 2440, while IC 2165, NGC 6818, and NGC 7662 have similar Ne-V and O-IV temperatures. It is suggested that the Ne-V and O-IV temperature similarities may be due to the presence of large abundances of the dominant coolants (oxygen or neon) in the Ne-V zone.

Rowlands, N.↗
NASA NTRS1998

Joining Carbon-Carbon Composites and High-Temperature Materials with High Energy Electron Beams

1. Program goals addressed during this period. Experimental work was directed at formation of a low-stress bond between carbon- carbon and aluminum, with the objective of minimizing the heating of the aluminum substrate, thereby minimizing stresses resulting from the coefficient of thermal expansion (CTE) difference between the aluminum and carbon-carbon. A second objective was to form a bond between carbon-carbon and aluminum with good thermal conductivity for electronic thermal management (SEM-E) application. 2. Substrates and joining materials selected during this period. Carbon-Carbon Composite (CCC) to Aluminum. CCC (Cu coated) to Aluminum. Soldering compounds based on Sn/Pb and Sn/Ag/Cu/Bi compositions. 3. Soldering experiments performed. Conventional techniques. High Energy Electron Beam (HEEB) process.

Goodman, Daniel↗
NASA NTRS1997

Reliable Breakdown Obtained in Silicon Carbide Rectifiers

The High Temperature Integrated Electronics and Sensor (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high-power, and/or high-radiation conditions will enable significant improvements to a far-ranging variety of applications and systems. These range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensor and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines.

Neudeck, Philip G.↗
NASA NTRS1992

Electron-impact vibrational relaxation in high-temperature nitrogen

Vibrational relaxation process of N2 molecules by electron-impact is examined for the future planetary entry environments. Multiple-quantum transitions from excited states to higher/lower states are considered for the electronic ground state of the nitrogen molecule N2 (X 1Sigma-g(+)). Vibrational excitation and deexcitation rate coefficients obtained by computational quantum chemistry are incorporated into the 'diffusion model' to evaluate the time variations of vibrational number densities of each energy state and total vibrational energy. Results show a non-Boltzmann distribution of number densities at the earlier stage of relaxation, which in turn suppresses the equilibrium process but affects little the time variation of total vibrational energy. An approximate rate equation and a corresponding relaxation time from the excited states, compatible with the system of flow conservation equations, are derived. The relaxation time from the excited states indicates the weak dependency of the initial vibrational temperature. The empirical curve-fit formula for the improved e-V relaxation time is obtained.

Lee, Jong-Hun↗
NASA NTRSDate not supplied

800 °C Demonstrated kHz SiC IC Electronics and Pressure Sensors as Technical Foundation for Realizing MHz DARPA HOTS Goals

The HOTS program will develop a technology for high-bandwidth, high-dynamic-range sensing at high temperature. Performance will be validated through the development and demonstration of a pressure sensor module (i.e., integrated transducer and signal-conditioning microelectronics) achieving the following performance goals: NASA Glenn has unique technology experience in extreme environment pressure sensors & IC electronics, including at 800 °C in air, providing significant risk reduction in meeting DARPA HOTS goals. Appropriate partnership and tech transfer should accelerate realization of DARPA HOTS hard technical challenges.

SiC pressure sensor electronics high temperature↗
NASA NTRS2011

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Patterson, Richard L.↗
NASA NTRS2004

Contraints on Solar Wind Plasma Properties Derived from Coordinated Coronal Observations

The goal of the proposed research was to increase the understanding of coronal plasma phenomena by making use of different observational approaches and combine the observations with the necessary theoretical considerations. During the funding period we studied the formation of spectral lines in the corona and transition region. We compared the spectral line ratios that would arise from the type of temperature profile commonly used to explain in situ ion fractions with the actual observed line ratios. We also carried out a theoretical study to investigate how large the electron temperatures can be in the near sun region. We carried out more detailed studies to show that differential flow speeds between ions of the same element can not bridge the above gap between low coronal electron temperatures and high in situ ion fractions. To investigate the drift between core and halo in the electron distribution function, which is observed in situ in the solar wind, we developed the first solar wind model with two electron populations. It was found that the anomalous frictional forces acting on the halo electrons are the dominant factor inhibiting the core-halo drift in the East solar wind. We used kinetic modeling to investigate the Alfvenic turbulence in the extended corona. In these studies we also included the effects of proton heating.

Esser, Ruth↗