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A viewgraph presentation that reviews recent SiGe bit error test data for different commercially available high speed SiGe BiCMOS chips that were subjected to various levels of heavy ion and proton radiation. Results for the tested chips at different operating speeds are displayed in line graphs.
Numerical calculations of the charge state distributions of test ions in a hot plasma under nonequilibrium conditions are presented. The mean ionic charges of heavy ions for finite residence times in an instantaneously heated plasma and for a non-Maxwellian electron distribution function are derived. The results are compared with measurements of the charge states of solar energetic particles, and it is found that neither of the two simple cases considered can explain the observations.
Two reports describe preliminary theoretical and experimental studies based on method described in "Laser Scanner Tests For Single-Event Upsets" (NPO-18216). Laser-scan and heavy-ion data found correlated within factor of two. Method of testing for single-event upsets intended to overcome disadvantages of, complement, and/or substitute for more-expensive cyclotron-testing method, which does not provide spatial resolution.
We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.
We investigated the heavy ion SEE characteristics of an EEPROM based on CBRAM technology. SEFI is the dominant type of SEE for each operating mode (standby, read-only, write/read). We also observed single bit upsets in the CBRAM cell, during write/read tests. the SEULET threshold is between 10 and 20 MeV * sq cm/mg, with an upper fluence limit of 3 × 10(exp 6) cm(exp -2) at 10 MeV * sq cm/mg. In the stand by mode, the CBRAM array appears immune to bit upsets.
JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.
We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.
The difference between high-LET and low-LET radiation is quantified by a measure called relative biological effectiveness (RBE). RBE is defined as the ratio of the dose of a reference radiation to that of a test radiation to achieve the same effect level, and thus, is described either as an iso-effector dose-to-dose ratio. A single dose point is not sufficient to calculate an RBE value; therefore, studies with only one dose point usually calculate an effect-to-effect ratio. While not formally used in radiation protection, these iso-dose values may still be informative. Shuryak, et al 2017 investigated the use of an iso-dose metric termed "radiation effects ratio" (RER) and used both RBE and RER to estimate high-LET risks. To apply RBE or RER to risk prediction, the selected metric must be uniquely defined. That is, the calculated value must be consistent within a model given a constant set of constraints and assumptions, regardless of how effects are defined using statistical transformations from raw endpoint data. We first test the RBE and the RER to determine whether they are uniquely defined using transformations applied to raw data. Then, we test whether both metrics can predict heavy ion response data after simulated effect size scaling between human populations or when converting animal to human endpoints.
This study is to determine the heavy ion induced single event effect (SEE) susceptibility of the Qorvo’s NBB-400 cascadable broadband GaAs amplifier DC to 8GHz.
Historically, the relative biological effectiveness (RBE) has been calculated to quantify the difference between heavy ion and gamma ray radiation. The RBE is then applied to gamma ray data to predict the effects of heavy ions in humans. The RBE is an iso-effect dose-to-dose ratio which, due to its counterintuitive nature, has been commonly miscalculated as an iso-dose effect-to-effect ratio. A paper recently published by Shuryak et al described this second measure intentionally for the first time in 2017, referring to it as the radiation effects ratio (RER). In this study, we utilized simulations to test the ability of both the RBE and the RER to predict known heavy ion effects. RBEs and RERs were calculated using mouse data from Chang et al, and the ability of the RBE and RER to predict the heavy ion data from which they were calculated was verified. Statistical transformations often utilized during data analysis were applied to the gamma and heavy ion data to determine whether RBE and RER are each uniquely defined measures. Scale changes are expected when translating effects from mice to humans and between human populations; gamma and heavy ion data were transformed to represent potential scale changes. The ability of the RBE and RER to predict the transformed heavy ion data from the transformed gamma data was then tested. The RBE but not the RER was uniquely defined after all statistical transformations. The RBE correctly predicted the scale-transformed heavy ion data, while the RER did not. This presentation describes potential implications for both metrics in light of these findings.
IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.
This issue of the Programmable Logic Application Notes is a compilation of topics: (1) Proton irradiation tests were performed on the Quick Logic QL3025 at the Indian University Cyclotron facility. The devices, tests, and results are discussed; (2) The functional failure of EEPROM's in heavy ion environment is presented; (3) the Act 1 architecture is summarized; (4) Antifuse hardness and hardness testing is updated; the single even upset (SEU) response of hardwired flip-flops is also presented; (4) Total dose results of the ACT 2 and ACT 3 circuits is presented in a chart; (5) Recent sub-micron devices testing of total dose is presented in a chart along with brief discussion; and (6) a reference to the WWW site for more articles of interest.
Three types of heavy-ion upsets occurred in an advanced FPGA-configuration PROM: (1) address errors, (2) premature end-of-program signals, and (3) functional interrupt. The threshold Lets were near 5 MeV-cm***sup2***/mg.
The slides present a brief snapshot discussing electronics and exploration-related challenges. Radiation effects have been the prime target, however, electronic parts reliability issues must also be considered. Modern electronics are designed with a 3-5 year lifetime. Upscreening does not improve reliability, merely determines inherent levels. Testing costs are driven by device complexity; they increase tester complexity, beam requirements, and facility choices. Commercial devices may improve performance, but are not cost panaceas. There is need for a more cost-effective access to high energy heavy ion facilities such as NSCL and NSRL. Costs for capable test equipment can run more than $1M for full testing.
Vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.
Susceptibility of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects is studied. Devices tested include digital, linear bipolar, and hybrid devices.