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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Pumping of getter-ion pumps at low pressure, crossed field mass spectrometer, secondary electron emission, angular distribution of Auger electrons, and gaseous adsorption
Supressor, pressure, and ionization gauges, getter ion pumps, bakeout procedures, and adsorption in high and ultrahigh vacuum systems
Feasibility study of using getters and hydrogen removers for hydrogen porosity reduction in arc welding aluminum alloy plates
Rocket-borne mass spectrometer-getter system for D region studies - flight prototype
DC beam experiment for determining molecule sticking coefficients of gas beams incident on Ti, Ba and Sr gettering surfaces at cryogenic temperature
Ion detection and monopole mass spectrometer performance tests with transverse magnetic field and titanium getter pump pumping capacity for D region ion composition analysis
Plots of oxygen chemical potential against composition of lithium-oxygen solutions and sodium-oxygen solutions for a range of temperature were constructed. For each liquid metal two such plots were prepared. For one plot ideal solution behavior was assumed. For the other plot, existing solubility limit data for oxygen in the liquid metal were used to determine a first-order term for departure from ideality. The use of the plots in evaluating the oxygen gettering capability of refractory metals in liquid metal cooling systems is illustrated by a simple example involving lithium, oxygen, and hafnium.
Sorption pumps applicable to the Pioneer Venus Mass Spectrometer Experiment were investigated. The pump requirements are discussed, and a survey of the existing pumps presented. Zirconium and zirconium graphite products were found to be the most promising among the getter materials surveyed. A preliminary pump design for the noble gas experiment is discussed.
Oxygen was added at 820 and 990 C at an oxygen pressure of about .0003 torr. The technique permitted predetermined and reproducible oxygen doping of the tantalum alloy (T-111). Based on the temperature dependency of the doping reaction, it was concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the tantalum and tungsten oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and oxygen from other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C but not at 820 C. The vaporization of WO3 has no apparent effect on the doping reaction.
Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.
Oxygen was added to T-111 (Ta-8W-2Hf, wt. %) at 820 and 990 C at an oxygen pressure of about 0.0003 torr. The technique employed permitted predetermined and reproducible doping of T-111 up to 3.0 at. % oxygen. Based on the temperature dependence of the doping reaction, it is concluded that the initial rates of oxygen pickup are probably controlled by solution of oxygen into the T-111 lattice. Although hafnium oxides are more stable than those of tantalum or tungsten, analyses of extracted residues indicate that the latter oxides predominate in the as-doped specimens, presumably because of the higher concentrations of tantalum and tungsten in the alloy. However, high-temperature annealing promotes gettering of dissolved oxygen and of other oxides to form hafnium oxides. Small amounts of tantalum and tungsten oxides were still present after high-temperature annealing. Tungsten oxide (WO3) volatilizes slightly from the surface of T-111 at 990 C. The vaporization of WO3 has no apparent affect on the doping reaction.
The substrate to be coated (which may be of metal, glass or the like) is cleaned, both chemically and by off-sputtering in a vacuum chamber. In an ultra-high vacuum system, vapor deposition by a sublimator or vaporizer coats a cooled shroud disposed around the substrate with a thin film of hydride forming metal which getters any contaminant gas molecules. A shutter is then opened to allow hydride forming metal to be deposited as a film or coating on the substrate. After the hydride forming metal coating is formed, deuterium or other hydrogen isotopes are bled into the vacuum system and diffused into the metal film or coating to form a hydride of metal film. Higher substrate temperatures and pressures may be used if various parameters are appropriately adjusted.
The effects of impurities, various thermochemical processes, and any impurity process interactions on the performance of terrestrial silicon solar cells are defined. Determinations of the segregation coefficients of tungsten, tantalum, and cobalt for the Czochralski pulling of silicon single crystals are reported. Sensitive neutron activation analysis was used to determine the metal impurity content of the silicon while atomic absorption was used to measure the metal content of the residual liquid from which the doped crystals were grown. Gettering of Ti doped silicon wafers improved cell performance by one to two percent for the highest temperatures and longest times. The HCl is more effective than POCl3 treatments for deactivating Ti but POCl3 and HCl produced essentially identical results for Mo or Fe.
A low cost wafer surface texturizing process was studied. An investigation of low cost cleaning operations to clean residual wax and organics from the surface of silicon wafers was made. The feasibility of replacing dry nitrogen with clean dry air for drying silicon wafers was examined. The two stage texturizing process was studied for the purpose of characterizing relevant parameters in large volume applications. The effect of gettering solar cells on photovoltaic energy conversion efficiency is described.
A sealed position sensitive proportional counter filled with two atmospheres of 95% xenon and 5% methane, and containing a drift region of 24 atm cm, has operated in a stable manner for many months. The detector contains G-10 frames to support the anode and cathode wires. The detector was sealed successfully by a combination of vacuum baking the G-10 frames at 150 C for two weeks followed by assembly into the detector in an environment of dry nitrogen, and the use of passive internal getters. The counter is intended for use with a circumferential cylindrical collimator. Together they provide a very broad field of view detection system with the ability to locate cosmic hard X-ray and soft gamma ray sources to an angular precision of a minute of arc. A set of instruments based on this principle have been proposed for satellites to detect and precisely locate cosmic gamma ray bursts.
The operation of the neutral beam collimator designed for the mass spectrometer inlet system of the Space Shuttle Induced Environment Contamination Monitor system is discussed. The collimator will allow selective views of a 10 deg half-angle conical volume of space so that backscattered molecules from within this volume can be measured and related to the column densities of outgassing species. Gas molecules which enter the collimator but do not have a view from the entrance orifice to the exit are directed to a gas getter and eliminated. The loss of properly directed molecules in the collimator due to their thermal distribution is calculated for the case of a directed flow, which would occur when the collimator is pointed in the direction of motion of the spacecraft. Inlet to outlet flux ratios are also computed as a function of angle of attack.
Large grain boundaries in polycrystals act as gettering centers for nickel precipitates, improving cell performance. Effects are described in report. Data on open-circuit voltage, short-circuit current, maximum power, and conversion efficiency for illuminated cells are compared with values for undoped cells. Dark forward current versus voltage is also measured for cell types.
Microstructural and electrical evaluation tests were performed on nickel-doped p-type silicon wafers before and after solar cell fabrication. The concentration levels of nickel in silicon were 5 x 10 to the 14th power, 4 x 10 to the 15th power, and 8 x 10 to the 15th power atoms/cu cm. It was found that nickel precipitated out during the growth process in all three ingots. Clumps of precipitates, some of which exhibited star shape, were present at different depths. If the clumps are distributed at depths approximately 20 micron apart and if they are larger than 10 micron in diameter, degradation occurs in solar cell electrical properties and cell conversion efficiency. The larger the size of the precipitate clump, the greater the degradation in solar cell efficiency. A large grain boundary around the cell effective area acted as a gettering center for the precipitates and impurities and caused improvement in solar cell efficiency. Details of the evaluation test results are given.