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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

Basic memory module

Construction and electrical characterization of the 4096 x 2-bit Basic Memory Module (BMM) are reported for the Space Ultrareliable Modular Computer (SUMC) program. The module uses four 2K x 1-bit N-channel FET, random access memory chips, called array chips, and two sense amplifier chips, mounted and interconnected on a ceramic substrate. Four 5% tolerance power supplies are required. At the Module, the address, chip select, and array select lines require a 0-8.5 V MOS signal level. The data output, read-strobe, and write-enable lines operate at TTl levels. Although the module is organized as 4096 x 2 bits, it can be used in a 8196 x 1-bit application with appropriate external connections. A 4096 x 1-bit organization can be obtained by depopulating chips.

Tietze, F. C.↗
NASA NTRS1977

Silicon ribbon growth by a capillary action shaping technique

Substantial improvements in ribbon surface quality are achieved with a higher melt meniscus than that attainable with the film-fed (EFG) growth technique. A capillary action shaping method is described in which meniscus shaping for the desired ribbon geometry occurs at the vertex of a wettable die. As ribbon growth depletes the melt meniscus, capillary action supplies replacement material. Topics discussed cover experimental apparatus and growth procedures; die materials investigations, fabrication and evaluation; process development for 25 mm, 38 mm, 50 mm and 100 mm silicon ribbons; and long grain direct solidification of silicon. Methods for the structural and electrical characterization of cast silicon ribbons are assessed as well as silicon ribbon technology for the 1978 to 1986 period.

Schwuttke, G. H.↗
NASA NTRS1976

Single crystal and polycrystalline GaAs solar cells using AMOS technology

A description is given of current technology for fabricating single AMOS (antireflection-coated metal oxide semiconductor) solar cells, with attention given to thermal, plasma, and anodic oxidation, native oxide stripping, and X-ray photoelectron spectroscopy results. Some preliminary results are presented on the chemistry and electrical characterization of such cells, and the characteristics of cells fabricated on sliced polycrystalline GaAs wafers are examined. Consideration is also given to the recrystallization of evaporated Ge films for use as low-cost substrates for polycrystalline GaAs solar cells.

Stirn, R. J.↗
NASA NTRS1979

Materials and techniques for spacecraft static charge control 2

Results of exploratory development on the design, fabrication and testing of transparent conductive coatings, conductive bulk materials and grounding techniques for application to high resistivity spacecraft dielectric materials to obtain control of static charge buildup are presented. Deposition techniques for application of indium oxide, indium/tin oxide and other metal oxide films on Kapton, FEP Teflon, OSR and solar cell coverglasses discussed include RF and Magnetron sputtering and vapor deposition. Development, fabrication and testing of conductive glass tiles for OSR and solar cell coverglass applications is discussed. Several grounding techniques for rapid charge dissipation from the conductively coated polymer and glass dielectrics which were developed and tested in thermal cycled and electron plasma environments are described. The optical and electrical characterization and aging effects of these coatings, bulk materials and grounding techniques are reviewed as they apply to the performance of their design functions in a geosynchronous orbit environment.

Schmidt, R. E.↗
NASA NTRS1979

Electrical Evaluation of RCA MWS5501D Random Access Memory, Volume 2, Appendix a

The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. The address access time, address readout time, the data hold time, and the data setup time are some of the results surveyed.

Klute, A.↗
NASA NTRS1979

Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 3, Appendix B

The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. The test values for the output voltage, average input current, the supply current and the leakage current are presented.

Klute, A.↗
NASA NTRS1979

Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 4, Appendix C

The electrical characterization and qualification test results are presented for the RCA MWS5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Statistical analysis data is supplied along with write pulse width, read cycle time, write cycle time, and chip enable time data.

Klute, A.↗
NASA NTRS1979

Electrical Evaluation of RCA MWS5001D Random Access Memory, Volume 5, Appendix D

The electrical characterization and qualification test results are presented for the RCA MWS 5001D random access memory. The tests included functional tests, AC and DC parametric tests, AC parametric worst-case pattern selection test, determination of worst-case transition for setup and hold times, and a series of schmoo plots. Average input high current, worst case input high current, output low current, and data setup time are some of the results presented.

Klute, A.↗
NASA NTRS1980

Electrical, thermal and abusive tests on lithium thionyl chloride cells

Electrical characterizations, thermal characterizations, and outer limits tests of lithium thionyl chloride cells are discussed. Graphs of energy density vs power density and heat rate vs time are presented along with results of forced reversal and high rate discharge tests.

Frank, H. A.↗
NASA NTRS1981

Development and fabrication of a solar cell junction processing system

Modifications to the ground plane, to insure a good electrical return path during the pulse discharge, were made using a ring of beryllium copper finger stock attached to the underside of the aluminum ground plate. Experiments on annealing of wafers with ion implantation damage continued. The entire surface of 100 mm diameter wafers were annealed by one pulse for the standard implant (10 keV, phosphorus, 2x10 to the 15th power ions/sq cm). While samples are being fabricated into solar cells for electrical characterization, work is continuing on improvement of the electron beam uniformity and the optimization of the diode parameters. The engineering design was completed and the manufacturing detail drawings were released for fabrication. Assembly of the subcomponents for the exit and entrance locks is almost complete. These components include the cassettes, the indexing mechanisms, main doors, and wafer carrier transfer modules. The 'Y' track and three phase transition track sections are under final assembly and test.

Giesling, R.↗
NASA NTRS1982

Positive electrode processing for Hughes NiH2 cells

The basic procedures were developed for the manufacture of nickel cadmium batteries. An electrochemical impregnation in an aqueous ethanol solution is used in this process. Several additional controls were instituted for production of flight electrodes, including a Hughes controlled MCD, a solution reserved exclusively for the impregnation of Hughes positive electrodes a system of complete traceability for individual electrodes, an electrical characterization test to provide information on weight and capacity at the plaque level, and a stress test to provide data on capacity, weight, and physical parameters at the electrode level.

Bleser, C. A.↗
NASA NTRS1985

Stress and efficiency studies

Optical and electrical characterization of defects has been started in EFG ribbon grown in a system that will be used to test the stress model. Temperature and stress field modeling aimed at defining low stress growth configuration is also in progress, and results will be used to guide development of the experimental system. The baseline defect configuration for ribbon grown at speeds of approx. 1 cm/min consists of dislocation densities of the order of 10 to the 5th power to 10 to the 6th power/sq cm, as well as saucer type etch pits and line defects. All these defects are inhomogeneously distributed. EBIC measurements indicate that diffusion lengths are in the range 20 to 60 microns, and significant spatial inhomogeneities occur through the ribbon thickness. Growth speed changes in the range 0.7-1.0 cm/min do not produce significant variations in ribbon defect configurations.

Source record↗
NASA NTRS1986

Lightweight, direct-radiating nickel hydrogen batteries

Two battery module configurations were developed which, in addition to integrating cylindrical nickel hydrogen (NiH2) cells into batteries, provide advances in the means of mounting, monitoring and thermal control of these cells. The main difference between the two modules is the physical arrangement of the cells: vertical versus horizontal. Direct thermal radiation to deep space is accomplished by substituting the battery structure for an exterior spacecraft panel. Unlike most conventional nickel-cadmium (NiCd) and NiH2 batteries, the cells are not tightly packed together; therefore ancillary heat conducting media to outside radiating areas, and spacecraft deck reinforcements for high mass concentration are not necessary. Testing included electrical characterization and a comprehensive regime of environmental exposures. The designs are flexible with respect to quantity and type of cells, orbit altitude and period, power demand profile, and the extent of cell parameter monitoring. This paper compares the characteristics of the two battery modules and summarizes their performance.

Metcalfe, J. R.↗
NASA NTRS1987

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

The fabrication of highly efficient indium phosphide solar cells by metalorganic chemical vapor deposition is reported. Since InP can be annealed at temperatures at low as approximately 100 C and the annealing occurs under solar illumination itself, this accomplishment is relevant to space power systems. A total area air mass zero efficiency of 17.9 percent and an air mass 1.5 efficiency of 20.4 percent are reported. Electrical characterization identifying loss mechanisms is made, and a shallow homojunction design is discussed along with possible improvements.

Spitzer, M. B.↗
NASA NTRS1989

Variable-Polarity Plasma Arc Welding Of Alloy 2219

Report presents results of study of variable-polarity plasma arc (VPPA) welding of aluminum alloy 2219. Consists of two parts: Examination of effects of microsegregation and transient weld stress on macrosegregation in weld pool and, electrical characterization of straight- and reverse-polarity portions of arc cycle.

Walsh, Daniel W.↗
NASA NTRS1993

Nickel-hydrogen CPV battery update

The multicell common pressure vessel (CPV) nickel hydrogen battery manufactured by Johnson Controls Battery Group, Inc. has completed full flight qualification, including random vibration at 19.5 g for two minutes in each axis, electrical characterization in a thermal vacuum chamber, and mass-spectroscopy vessel leak detection. A first launch is scheduled for late in 1992 or early 1993 by the Naval Research Laboratory (NRL). Specifics of the launch date are not available at this time due to the classified nature of the program. Release of orbital data for the battery is anticipated following the launch.

Jones, Kenneth R.↗
NASA NTRS1992

Nickel hydrogen multicell common pressure vessel battery development update

The technology background and design qualification of the multicell common pressure vessel nickel hydrogen battery are described. The results of full flight qualification, including random vibration at 19.5 g for two minutes in each axis, electrical characterization in a thermal vacuum chamber, and mass spectroscopy vessel leak detection are reviewed and 12.7 cm qualification and 25.4 cm design adaptation are discussed.

Zagrodnik, Jeffrey P.↗
NASA NTRS1993

Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor deposition

This paper reports the fabrication and initial electrical characterization of greatly improved 3C-SiC (beta-SiC) p-n junction diodes. These diodes, which were grown on commercially available 6H-SiC substrates by chemical vapor deposition, demonstrate rectification to -200 V at room temperature, representing a fourfold improvement in reported 3C-SiC diode blocking voltage. The reverse leakage currents and saturation current densities measured on these diodes also show significant improvement compared to previously reported 3C-SiC p-n junction diodes. When placed under sufficient forward bias, the diodes emit significantly bright green-yellow light. These results should lead to substantial advancements in 3C-SiC transistor performance.

Neudeck, Philip G.↗