Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “doping of semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Impact of cobalt doping on structural and magnetic properties of zinc oxide nanocomposites synthesized by mechanical ball-milling method

A series of zinc oxide (ZnO) semiconductor nanocomposite samples doped with different concentrations of cobalt (Co) were successfully synthesized via simple and highly effective mechanical ball-milling method using suitable precursors. All doped nanocomposites crystallized in hexagonal wurtzite formation of ZnO. No alteration in the wurtzite structure, with no evidence of any segregated secondary phase(s) was detected with increasing doping concentrations. This result unambiguously verified the substitution of Zn 2+ sites by Co 2+ ions in the ZnO host lattice for different doping concentrations. Moreover, room temperature ferromagnetic behavior was observed in all doped nanocomposite samples in the reported work. Present study clearly shows that mechanical ball-milling is a facile, inexpensive, eco-friendly method to synthesize crystalline and magnetic Co doped ZnO nanocomposites for next generation spin-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

A Bis(arenesulfonyl) Peroxide, an Ambient-Stable Oxidant, Is a Strong p-Dopant for Organic Semiconductors

Strong p-dopants are required to dope high-ionization energy organic semiconductors for a variety of potential applications, but strong, simple one-electron oxidants are typically sensitive to reduction by atmospheric moisture and thus challenging to store or handle. Here we show that bis(3,5-bis(trifluoromethyl)benzenesulfonyl) peroxide─a dimer formed by two highly oxidizing radicals─can function as a water-stable yet powerful oxidant, cleanly reacting with some organic semiconductors to form two radical cations and two 3,5-bis-(trifluoromethyl)benzenesulfonate anions, although in other cases sulfonylation reactions can also occur. Notably, this peroxide is capable of p-doping the high-ionization energy polymer poly[(9,9-dioctylfluorene-2,7-diyl)- alt -(benzo[2,1,3]thiadiazol-4,7-diyl)] (F8BT) to afford electrical conductivities of up to 0.03 S cm –1 , while its use with electron-rich poly(3,4-dialkoxythiophene-2,5-diyl) derivatives can afford values up to 100 S cm –1 . Quantum-chemical calculations reveal the peroxide oxidant behaves in a fashion mirroring that of relatively oxygen-stable, but highly reducing, n-dopants that have been developed based on dimers of organic radicals or organometallic sandwich compounds.

doping↗
NASA NTRS2006

Highly Efficient Multilayer Thermoelectric Devices

Multilayer thermoelectric devices now at the prototype stage of development exhibit a combination of desirable characteristics, including high figures of merit and high performance/cost ratios. These devices are capable of producing temperature differences of the order of 50 K in operation at or near room temperature. A solvent-free batch process for mass production of these state-of-the-art thermoelectric devices has also been developed. Like prior thermoelectric devices, the present ones have commercial potential mainly by virtue of their utility as means of controlled cooling (and/or, in some cases, heating) of sensors, integrated circuits, and temperature-critical components of scientific instruments. The advantages of thermoelectric devices for such uses include no need for circulating working fluids through or within the devices, generation of little if any noise, and high reliability. The disadvantages of prior thermoelectric devices include high power consumption and relatively low coefficients of performance. The present development program was undertaken in the hope of reducing the magnitudes of the aforementioned disadvantages and, especially, obtaining higher figures of merit for operation at and near room temperature. Accomplishments of the program thus far include development of an algorithm to estimate the heat extracted by, and the maximum temperature drop produced by, a thermoelectric device; solution of the problem of exchange of heat between a thermoelectric cooler and a water-cooled copper block; retrofitting of a vacuum chamber for depositing materials by sputtering; design of masks; and fabrication of multilayer thermoelectric devices of two different designs, denoted I and II. For both the I and II designs, the thicknesses of layers are of the order of nanometers. In devices of design I, nonconsecutive semiconductor layers are electrically connected in series. Devices of design II contain superlattices comprising alternating electron-acceptor (p)-doped and electron-donor (n)-doped, nanometer- thick semiconductor layers.

Boufelfel, Ali↗
DOE OSTI2021

N-Doping improves charge transport and morphology in the organic non-fullerene acceptor O-IDTBR

Molecular doping has been shown to improve the performance of various organic (opto)electronic devices. When compared to p-doped systems, research into n-doped organic small-molecules is relatively limited, primarily due to the lack of suitable dopants and the often encountered unfavourable microstructural effects. These factors have prevented the use of n-doping in a wider range of existing materials, such as non-fullerene acceptors (NFAs), that have already shown great promise for a range of (opto)electronic applications. Here, we show that several different molecular n-dopants, namely [1,2-b:2',1'-d]benzo[i][2.5]benzodiazocine potassium triflate adduct (DMBI-BDZC), tetra-n-butylammonium fluoride (TBAF) and 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), can be used to n-dope the molecular semiconductor O-IDTBR, a promising NFA, and increase the electron field-effect mobility to >1 cm 2 V -1 s -1 . By combining complementary experimental techniques with computer simulations of doping and charge carrier dynamics, we show that improved charge transport arises from synergistic effects of n-type doping and morphological changes. Specifically, a new, previously unreported dopant-induced packing orientation results in one of the highest electron mobility values reported to-date for an NFA molecule. Overall, this work highlights the importance of dopant–semiconductor interactions and their impact on morphology, showing that dopant-induced molecular packing motifs may be generic and a key element of the charge transport enhancement observed in doped organics.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Overcash, D. R.

The objectives of this investigation were to determine the characteristics of semiconductor devices at low temperatures. The output characteristics of several currently available semiconductor devices and devices fabricated at Marshall Space Flight Center were measured over a range of gate voltages. Large variations in low-temperature performance, not only from type to type, but from field effect transistor (FET) to FET of the same type were obtained. By increasing the carrier concentrations at low temperatures through extra heavy doping, metal oxide semiconductor field effect transistor (MOSFET) device was fabricated that operated at 4.2K. To verify the low-temperature operation of a heavily doped device, this procedure was repeated. Their noise spectrum was analyzed at 4.2K. Suggestions were made as to possible fabrication methods, techniques, and other semiconductor materials that might improve the device charactersitics at low temperatures. A procedure for using an electric field to drift dopants through the insulating oxide to produce a very thin, heavily doped region under the gate of a MOSFET was initiated. Capacitance s a function of voltage plots was suggested as a method for determining the level of dopant drift.

Source record↗
DOE OSTI2023

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.

Physics↗
DOE OSTI2020

Sequential Doping of Ladder-Type Conjugated Polymers for Thermally Stable n-Type Organic Conductors

Doping of organic semiconductors is a powerful tool to optimize the performance of various organic (opto)electronic and bioelectronic devices. Despite recent advances, the low thermal stability of the electronic properties of doped polymers still represents a significant obstacle to implementing these materials into practical applications. Hence, the development of conducting doped polymers with excellent long-term stability at elevated temperatures is highly desirable. Here, we report on the sequential doping of the ladder-type polymer poly(benzimidazobenzophenanthroline) (BBL) with a benzimidazole-based dopant (i.e., N-DMBI). By combining electrical, UV–vis/infrared, X-ray diffraction, and electron paramagnetic resonance measurements, we quantitatively characterized the conductivity, Seebeck coefficient, spin density, and microstructure of the sequentially doped polymer films as a function of the thermal annealing temperature. Importantly, we observed that the electrical conductivity of N-DMBI-doped BBL remains unchanged even after 20 h of heating at 190 °C. This finding is remarkable and of particular interest for organic thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2026

Beyond Thermal Limits: Manipulating Reactive Intermediate Coverages and Turnover Rates via Visible Photon-Mediated Catalysis on Rh-Doped Perovskite Oxides

Catalyst behavior depends on surface adsorbate energetics that are constrained by scaling relationships on metal surfaces. External stimuli (e.g., photons), however, can disrupt these limitations by modulating key intermediate coverages via non-thermal reaction pathways. Here, low-energy visible photon fluxes are utilized to selectively control coverages of strongly bound intermediates on isolated Rh active sites doped within a semiconductor perovskite oxide host (SrTiO 3 ). Red light (632 nm) facilitates selective photolytic CO desorption from rhodium gem-dicarbonyl (Rh(CO) 2 ) species that are ubiquitous reaction intermediates, including for the probe reaction studied herein CO oxidation to CO 2 . Thermochemical CO 2 formation rates (408 K) on Rh-doped SrTiO 3 are limited by adsorbed CO, exhibiting a negative apparent CO rate order (−0.6) and a positive O 2 rate order (+0.4). Arrhenius analyses, anaerobic CO oxidation measurements, and in situ spectroscopies assert that, thermochemically, lattice oxygens from the doped perovskite contribute to CO 2 formation rates. Notably, under red light illumination (0.76–2.02 W cm –2 ), the apparent CO rate order shifts to positive (+1). This, combined with decreasing apparent activation energies and CO coverages (wavelength-agnostic) with increasing photon flux, indicates that photons act selectively toward driving Rh(CO) 2 photolysis, even within complex reaction networks, thereby enhancing Rh accessibility, O 2 dissociation, and consequent rates. Finally, low-energy red light enables more stoichiometric feeds, leading to 650% higher CO 2 rates than those achieved thermally. Overall, this work elucidates how low-energy light can be leveraged, not just to improve reaction rates, but to selectively affect rates of individual elementary steps and key intermediate coverages, thereby breaking conventional scaling relationships that limit thermal catalyst performance.

catalysts↗
DOE OSTI2024

Combination of Counterion Size and Doping Concentration Determines the Electronic and Thermoelectric Properties of Semiconducting Polymers

In both chemical and electrochemical doping of organic semiconductors (OSCs), a counterion, either from the electrolyte or ionized dopant, balances the charge introduced to the OSC. Despite the large influence of this counterion on OSC optical and electronic response, there remains substantial debate on how a fundamental parameter, ion size, impacts these properties. Here, this work resolves much of this debate by accounting for two doping regimes. In the low-doping regime, the Coulomb binding energies between charge carriers on the OSC and the counterions are significant, and larger counterions lead to decreased Coulomb interactions, more delocalized charge carriers, and higher electrical conductivities. In the high-doping regime, the Coulomb binding energies become negligible due to the increased dielectric constant of the films and a smoothing of the energy landscape; thereby, the electrical conductivities depend primarily on the extent of morphological disorder in the OSC. Moreover, in regioregular poly(3-hexylthiophene), rr-P3HT, smaller counterions lead to greater bipolaron concentrations in the low-doping regime due to the increased Coulomb interactions. Emphasizing the impact of the counterion size, it is shown that larger counterions can lead to increased thermoelectric power factors for rr-P3HT.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ferromagnetic Double Perovskite Semiconductors with Tunable Properties

Abstract The authors successfully dope the magnetically silent double perovskite semiconductor Sr 2 GaSbO 6 to induce ferromagnetism and tune its bandgap, with Ga 3+ partially substituted by the magnetic trivalent cation Mn 3+ , in a rigid cation ordering with Sb 5+ . The new ferromagnetic semiconducting Sr 2 Ga 1− x Mn x SbO 6 double perovskite, which crystallizes in tetragonal symmetry (space group I 4/ m ) and has tunable ferromagnetic ordering temperature and bandgap, suggests that magnetic ion doping of double perovskites is a productive avenue toward obtaining materials for application in next‐generation oxide‐based spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Stable High‐Conductivity Ethylenedioxythiophene Polymers via Borane‐Adduct Doping

Efficient doping of polymer semiconductors is required for high conductivity and efficient thermoelectric performance. Lewis acids, e.g., B(C 6 F 5 ) 3 , have been widely employed as dopants, but the mechanism is not fully understood. 1:1 “Wheland type” or zwitterionic complexes of B(C 6 F 5 ) 3 are created with small conjugated molecules 3,6-bis(5-(7-(5-methylthiophen-2-yl)-2,3-dihydrothieno[3,4-b][1,4]dioxin-5-yl)thiophen-2-yl)-2,5-dioctyl-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione [oligo_DPP(EDOT) 2 ] and 3,6-bis(5''-methyl-[2,2':5',2''-terthiophen]-5-yl)-2,5-dioctyl-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione [oligo_DPP(Th) 2 ]. Using a wide variety of experimental and computational approaches, the doping ability of these Wheland Complexes with B(C 6 F 5 ) 3 are characterized for five novel diketopyrrolopyrrole-ethylenedioxythiophene (DPP-EDOT)-based conjugated polymers. The electrical properties are a strong function of the specific conjugated molecule constituting the adduct, rather than acidic protons generated via hydrolysis of B(C 6 F 5 ) 3 , serving as the oxidant. It is highly probable that certain repeat units/segments form adduct structures in p -type conjugated polymers which act as intermediates for conjugated polymer doping. Electronic and optical properties are consistent with the increase in hole-donating ability of polymers with their cumulative donor strengths. The doped film of polymer (DPP(EDOT) 2 -(EDOT) 2 ) exhibits exceptionally good thermal and air-storage stability. The highest conductivities, ≈300 and ≈200 S cm -1 , are achieved for DPP(EDOT) 2 -(EDOT) 2 doped with B(C 6 F 5 ) 3 and its Wheland complexes.

36 MATERIALS SCIENCE↗