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At least 163 records · Page 9

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Space charge trap-assisted recombination suppressing layer for low-voltage diode operation

Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.

Santhanam, Parthiban↗

Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.

42 ENGINEERING↗

Caught in headlights: Captive white-tailed deer responses to variations in vehicle lighting during imminent collision scenarios

Vehicle collisions with deer (Odocoileus spp.) cause billions of dollars in damages and injure thousands of drivers every year in the United States, and few mitigation methods have proven effective. However, recent research suggests that vehicle lighting might influence white-tailed deer (Odocoileus virginianus; hereafter, deer) responses to oncoming vehicles. Most new vehicles are manufactured with light emitting diode (LED) headlights which differ in total radiance and wavelength of light emitted compared to the previous industry standard of tungstenhalogen (halogen) headlights. Also, frontal vehicle illumination through rear-facing lighting has shown promise in enhancing deer responses to vehicles, but its effectiveness has not been tested under various headlight conditions (headlight type or intensity). As such, it remains unclear how these aspects of vehicle lighting affect deer responses to an approaching vehicle. We used 23 captive, wild-type deer to investigate how variations in vehicle lighting affect deer responses to an approaching vehicle at night, when most collisions occur. We released deer into a 95 m long, 3 m wide chute and approached them from the opposite end with an electric golf cart outfitted with two versions of stock 2017–2020 Ford Fusion headlights (LED and halogen) and a 51 cm rear-facing lightbar to test how vehicle lighting affected deer avoidance behaviors in an imminent, head-on collision scenario. Each deer received eight lighting treatments consisting of unique combinations of headlight type (LED vs. halogen), light intensity (low vs. high beam), and rear-facing lighting (lightbar off vs. on). We measured deer alert and flight behavior using infrared videography. We found that the halogen, high beam, lightbar off treatment had the greatest probability of evoking an alert response. Furthermore, when the lightbar was off, high beams appeared to increase alert probability for halogen headlights. Also, we found evidence that high beam, halogen headlights tend to increase alert probability over high beam, LED headlights, when the lighbar was off. We found no effect of our lighting treatments on deer alert distance, flight probability, or flight initiation distance. Across all behavioral responses, the random effect deer ID explained 0.86–9.19 × more variation than our lighting treatments, reflecting large differences in responses among deer. Overall, we found that vehicle lighting can impact deer behavior during an imminent, head-on collision scenario, although lighting was ineffective at increasing favorable flight behaviors. Future research should investigate how vehicle lighting treatments affect free-ranging, wild deer in a variety of real-world scenarios and at longer approach distances.

White-tailed deer (Odocoileus virginianus) Deer be↗

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗

Improved multiline HVDC circuit breakers with asymmetric conducting branches

Here, this paper proposes two improved multiline HVDC circuit breakers (DCBs) for HVDC grid applications, including type-1 improved multiline DCB and type-2 improved multiline DCB. The two improved DCBs draw on the core idea of extended H-bridge. m adjacent DC transmission lines share a single main breaker (MB) and surge arrester. Due to the extended H-bridge design, bidirectional current flow can be achieved by a unidirectional MB. An upper conducting branch and a lower conducting branch are connected to a DC line. The upper and lower conducting branches in the two improved multiline DCBs are asymmetric. The upper conducting branch of both two improved DCBs is formed by a load commutation switch (LCS) and an ultra-fast disconnector (UFD). The lower conducting branch of the type-1 improved scheme is composed of a diode and a UFD; and of the type-2 improved scheme is made up of diode stack. Compared with other DCBs, the proposed type-1 DCB and type-2 DCB are more cost effective. Among the five DCBs, the type-2 improved scheme requires the least number of individual switching actions. The effectiveness and feasibility of the proposed schemes are verified through simulation of a bipolar three-terminal HVDC grid in PSCAD/EMTDC.

42 ENGINEERING↗

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗

Combined TDLAS and chemiluminescence imaging in a flat flame burner operated with NH3/H2 blends

Ammonia is viewed as a viable hydrogen carrier due to favorable storage and transport characteristics. While it can be re-converted to hydrogen at point-of-use via thermal catalytic cracking, direct utilization in combustion systems can result in reduced costs and improved efficiency. A major barrier to this approach is the low flammability and potential for high nitrogen oxide emissions, driven by fuel-bound nitrogen and complex kinetic pathways. While a number of kinetic mechanisms currently exist for simulating ammonia combustion, a major need continues to be direct information about species profiles in easy-to-model systems capable of isolating chemical kinetics from multi-dimensional fluid dynamic effects. This paper reports on recent species measurements made in a flat flame burner using a combined tunable-diode-laser-absorption-spectroscopy (TDLAS) and chemiluminescence imaging approach. Three flame conditions were included representative of NH3/H2 blends, partially cracked NH3 (inc. N2), and 100% NH3 with enhanced air (30% oxygen). Two NIR distributed feedback (DFB) laser diodes were used to determine H2O concentration and temperature (via ratio thermometry) at various radial and axial positions, after which an inverse Abel transform was used to infer centerline values. Companion images were collected using a Princeton Instrument PI-MAX intensified camera equipped with a 105mm UV lens and multiple filter sets targeting OH*, NH*, and NH2* emission. Results were compared to companion Cantera burner-stabilized flame simulations using various kinetic mechanisms. A recent mechanism including excited species chemistry was also included, to investigate whether excited and ground state profiles exhibit significant differences.

ammonia combustion↗

Proton radiation effects on electronic defect states in MOCVD-grown (010) β -Ga 2 O 3

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga 2 O 3 Schottky diodes is presented. It is found that after a 10.8 × 10 13 cm –2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm –1 . The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E c -2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E c -0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E C -0.36, E C -0.63, and E C -1.09 eV were newly detected after proton irradiation, and two pre-existing states at E C -1.2 and E C -4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E c -0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

42 ENGINEERING↗

β -Ga 2 O 3 Schottky barrier diodes with 4.1 MV/cm field strength by deep plasma etching field-termination Available

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields higher than 4.1 MV/cm with negligible change to the device ON characteristics. The effect of BCl 3 /Cl 2 -based dry etch on (100) and (010) etched vertical sidewalls is also analyzed. A remarkable anisotropy in depletion was observed for etch along (100) and (010) sidewalls. In conclusion, this work provides insight into the impact of etching on n-type Ga 2 O 3 and shows a promising method to realize efficient field termination for high breakdown field strength SBDs.

42 ENGINEERING↗

Voltage-controlled reversible modulation of colloidal quantum dot thin film photoluminescence

Active modulation of quantum dot thin film photoluminescence (PL) has been far-reaching potential applications in biomedical and optoelectronic systems, but challenges remain in achieving large PL modulation depth and fast temporal response. Here, we report an efficient voltage-controlled optical down-converter by optically exciting a colloidal quantum dot thin film within a quantum dot light-emitting diode under reverse bias. Utilizing field-induced luminescence quenching, we show that a large electric field can strongly modify carrier dynamics in this nanostructured device, resulting in stable and reversible photoluminescence quenching. The device exhibits photoluminescence reduction of up to 99.5%, corresponding to a contrast ratio of 200:1 under the applied electric field of 3 MV cm -1 with a 300 ns response time. Using excitation wavelength dependent and transient PL spectroscopy, we further show that the high degree of quenching is achieved by a synergistic interplay of quantum-confined Stark effect and field-induced exciton dissociation.

42 ENGINEERING↗

Effects on the Ocular Surface from Reading on Different Smartphone Screens: A Prospective Randomized Controlled Study

The purpose of this study was to investigate the influence of smartphone reading on the ocular surface and to compare the various effects of different screens and light conditions on the ocular surface. One hundred nineteen volunteers were randomly divided into: light + organic light‐emitting diode (OLED), light + electronic ink (eINK), dark + OLED, and dark + eINK. Ocular surface examinations, including noninvasive break‐up time (NIBUT), noninvasive keratograph tear meniscus height (NIKTMH), ocular redness, fluorescein break‐up time (FBUT), corneal fluorescein staining, meibomian gland assessment, Schirmer I Test, and blinking frequency, were performed before and after a reading task. Symptoms were evaluated using the Ocular Surface Disease Index (OSDI) and Computer Vision Syndrome Questionnaire (CVS‐Q). NIBUT and FBUT were decreased statistically significantly after participants read on an OLED screen for 2 hours compared with the baseline in light and dark environments, whereas no statistically significant decrease was observed on an eINK screen. NIKTMH was statistically significantly decreased after reading on an OLED screen in light and dark settings, and the eINK screen had a lesser effect on NIKTMH. An obvious increase in the ocular redness, OSDI and CVS‐Q scores was observed after reading on an OLED screen, whereas the eINK screen had a lesser effect on these indicators. Blink rate increased gradually in OLED subgroups during the reading task, whereas no statistically significant difference was observed in the eINK subgroups. Our research suggested that reading on an OLED screen can cause ocular surface disorder and obvious subjective discomfort, whereas reading on an eINK screen can minimize ocular surface disorder in both dark and light environments.

Yuan, Kelan↗

Lifting Triplet Degeneracy Through Organic‐Cation Driven Structural Perturbation to Modulate Luminescence of Sb 3+ ‐Doped Double Perovskite

The spin-orbit coupling (SOC) and the Jahn-Teller effect (JTE) alter the orbital degeneracy in materials, leading to unique optical, electronic, and magnetic properties essential in spintronics, quantum computing, and light-emitting diodes (LEDs). Here, the study employs luminescent p-xylylenediammonium (PXA) instead of Cs+ in Cs2NaInCl6 to yield 2D Sb3+-doped (PXA)2NaInCl8 double perovskite and demonstrates a non-degenerate triplet state resulting from enhanced JTE in the strong SOC regime, featuring distinct emission centers. Consequently, a broadband emission from both PXA and [SbCl6]3− spans the entire spectrum (350–750 nm), representing a rare single-source multi-emissive 2D perovskite. With in-depth comparative structural, temperature-dependent photo-physical, and theoretical studies, it is elucidated that the synergistic effect of SOC and JTE on the Eg and T2g lattice modes modulate the electronic structure of [SbCl6]3− by splitting the doubly degenerate E levels of 3 T$^{*}_{1u}$ into non-degenerate states. The physical model, supported by theoretical studies, explains the energy level splitting required to realize two kinds of radiative minima in the relaxed excited state.

36 MATERIALS SCIENCE↗

Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN

In this article, we investigate the effect of different chemical treatments, such as solvents, bases, and acids, on the surface properties and electrical behavior of Schottky diodes fabricated on metalorganic chemical vapor deposition-grown, n-type, N-polar GaN. The I–V and C–V barrier heights of the as-grown Schottky diodes are found to be 0.40 eV and 0.60 eV, respectively, with an ideality factor n = 1.07. It is found that the solvent treatments neither change the surface nor the electrical performance of the Schottky diodes, as expected. However, the treatments by the alkaline photolithography developer and acid—the latter of which is often used to clean the surface of Ga-polar GaN films prior to metal contact deposition—degrade the performance of N-polar GaN. These base and acid treatments severely roughen the surface by creating triangular/hexagonal crystallographic facets. The I–V and C–V barrier heights of these base- and acid-treated diodes are increased to 0.63 eV and 1.00 eV, respectively, with ideality factor values n < 1.2. X-ray photoelectron spectroscopy studies indicate that base- and acid-treated surfaces have lower oxygen content as compared to the as-grown sample surface. It is understood that the increment in the barrier height for base- and acid-treated diodes could be due to the change in polarity, from N-polar to semi-polar/non-polar, on these crystallographic features. All these results demonstrate that, unlike for Ga-polar GaN, the N-polar GaN surface is highly reactive to bases and acids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Closing the Accuracy Gap in Tandem Photovoltaic Testing: An Accessible and Efficient Spectral Tuning Method Using LED-Based Simulators for Research Laboratories and Industry

Accurate performance calibration of multijunction (MJ) solar cells is critical for advancing this technology toward large-scale terrestrial application, yet existing testing methods developed by photovoltaics calibration laboratories remain prohibitively complex and resource intensive for most research laboratories. Current approaches rely on expensive multisource simulators and/or intricate spectral tuning algorithms, limiting accessibility and hindering standardized comparisons of emerging MJ technologies such as perovskite-based tandems. This paper introduces a streamlined spectral irradiance adjustment method for light-emitting diode (LED)-based solar simulators, which are increasingly adopted in the photovoltaics community due to their versatility and cost-effectiveness. The method we present bins LED channels into groups based on the number of junctions of the MJ photovoltaic device under test (DUT) and their corresponding band gaps and incorporates an automated tuning algorithm that eliminates the need to adjust each channel’s irradiance individually. This tuning algorithm requires the relative spectral responsivities of both the DUT and a broadband reference cell, as well as a calibrated spectroradiometer. Measurement validation across various MJ devices, including III-V and perovskite/silicon tandems, demonstrates excellent agreement within 1% with well-established xenon-tungsten multisource simulators and associated tuning algorithms. By enabling precise spectral tuning with readily available equipment and a simple tuning algorithm, our approach bridges the measurement accuracy gap between research laboratories and accredited testing facilities, fostering more reliable device comparisons and accelerating the translation of MJ technologies into real-world energy systems.

14 SOLAR ENERGY↗

Using machine learning with optical profilometry for GaN wafer screening

Abstract To improve the manufacturing process of GaN wafers, inexpensive wafer screening techniques are required to both provide feedback to the manufacturing process and prevent fabrication on low quality or defective wafers, thus reducing costs resulting from wasted processing effort. Many of the wafer scale characterization techniques—including optical profilometry—produce difficult to interpret results, while models using classical programming techniques require laborious translation of the human-generated data interpretation methodology. Alternatively, machine learning techniques are effective at producing such models if sufficient data is available. For this research project, we fabricated over 6000 vertical PiN GaN diodes across 10 wafers. Using low resolution wafer scale optical profilometry data taken before fabrication, we successfully trained four different machine learning models. All models predict device pass and fail with 70–75% accuracy, and the wafer yield can be predicted within 15% error on the majority of wafers.

36 MATERIALS SCIENCE↗

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗