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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

High-current, high-voltage AlN Schottky barrier diodes

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm 2 ), high current density (>5 kA cm −2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .

Quiñones, C. E. (ORCID:0000000192703747)↗
NASA NTRS1971

Design of an external-fueled thermionic diode for in-pile testing.

Description of an external-fueled thermionic diode suitable for in-pile testing in a research reactor. The active electrode area is 94 sq cm. The 10-in. long, 1.5-in.-OD emitter body is tungsten 2% thoria. The fuel is contained in six 0.4-in.-diam holes equally spaced about the 0.5-in. central emitter hole. The collector is niobium-1% zirconium. The expected diode performance is 6 W/sq cm at 2000 K. In addition to following the constraints imposed by the in-pile testing and the electrically heated performance mapping prior to insertion in-pile, the diode will have end configurations prototypical of those anticipated for a flow-through, NaK-cooled, external-fuel thermionic reactor.

Ernst, D. M.↗
NASA NTRS1972

Design, fabrication and testing of a thermal diode

Heat pipe diode types are discussed. The design, fabrication and test of a flight qualified diode for the Advanced Thermal Control Flight Experiment (ATFE) are described. The review covers the use of non-condensable gas, freezing, liquid trap, and liquid blockage techniques. Test data and parametric performance are presented for the liquid trap and liquid blockage techniques. The liquid blockage technique was selected for the ATFE diode on the basis of small reservoir size, low reverse mode heat transfer, and apparent rapid shut-off.

Swerdling, B.↗
NASA NTRS1973

Avalanche diodes for the generation of coherent radiation

Solid state devices and characterization, and optimum imbedding networks for realizing best performance were investigated along with a barrier injection transit time diode. These diodes were investigated for possible application as microwave amplifiers and oscillators. Measurements were made of diode noise figures in the frequency ranges of 4 - 6 GHz. Initial results indicate that a noise figure of 6 - 8 db may be possible. Optimum device structure and fabrication techniques necessary for low noise performance were investigated. Previously published documents on electrodynamics are included.

Penfield, P., Jr.↗
NASA NTRS1974

Development and fabrication of improved Schottky power diodes, phases I and II

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values.

Cordes, L. F.↗
NASA NTRS1974

Development of a blocking orifice thermal diode heat pipe

A new geometry is described for low temperature diode heat pipes employing excess liquid to block the vapor space of the evaporator and part of the transport section during reverse mode conditions. An orifice plate is placed in the pipe at the blocking meniscus location, with the opening arranged to permit proper liquid distribution in both ground tests and zero 'g' operation. Parametric analytical results are presented for several fluids (carbon tetrafluoride, methane, and ethane). Experimental data is presented for a room temperature diode verifying feasibility, and a 1/4 in. O.D. cryogenic diode with methane working fluid.

Kosson, R. L.↗
NASA NTRS1975

Diode-quad bridge circuit means

Diode-quad bridge circuit means is described for use as a transducer circuit or as a discriminator circuit. It includes: (1) a diode bridge having first, second, third, and fourth bridge terminals consecutively coupled together by four diodes polarized in circulating relationship; (2) a first impedance connected between the second bridge terminal and a circuit ground; (3) a second impedance connected between the fourth bridge terminal and the circuit ground; (4) a signal source having a first source terminal capacitively coupled to the first and third bridge terminals, and a second source terminal connected to the circuit ground; and (5) an output terminal coupled to the first bridge terminal and at which an output signal may be taken.

Harrison, D. R.↗
NASA NTRS1975

Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Cordes, L. F.↗
NASA NTRS1977

The 13.9 GHz short pulse radar noise figure measurements utilizing silicon and gallium-arsenide mixer diodes

An analysis was made on two commercially available silicon and gallium arsenide Schottky barrier diodes. These diodes were selected because of their particularly low noise figure in the frequency range of interest. The specified noise figure for the silicon and gallium arsenide diodes were 6.3 db and 5.3 db respectively when functioning as mixers in the 13.6 GHz region with optimum local oscillator drive.

Dombrowski, M.↗
NASA NTRS1976

On the determination of series resistance and diode quality factor of solar cells

The series resistance and diode quality factor are used for evaluation of solar cell performance. These parameters are normally deduced from the terminal I-V characteristics under forward bias. The method produces a smaller series resistance and a larger value for diode quality factor than appropriate for the device when operating as a solar cell. It is suggested that the diode quality factor be determined from measured saturated photocurrent, open circuit voltage characteristics and the series resistance be measured with an r-f bridge or calculated from a measurement of the surface sheet resistance.

Anderson, R. L.↗
NASA NTRS1978

Regulated high efficiency, lightweight capacitor-diode multiplier dc to dc converter

A voltage multiplier having a capacitor-diode voltage multiplying network is disclosed which is fed with voltage pulses from a dc source through a first switching means. Pulses of a second polarity are also supplied through a second switching means to the input of the capacitor-diode voltage multiplier from a second dc source whose voltage is adjustable to change the voltage of the pulses of second polarity. The switching means are alternately rendered conducting by signals from a control circuit. The second dc source may be controlled by a voltage comparator which compares the output voltage of the capacitor-diode voltage multiplier to the reference source.

Harrigill, W. T., Jr.↗
NASA NTRS1979

Shock isolator for operating a diode laser on a closed-cycle refrigerator

A diode laser mounted within a helium refrigerator is mounted using a braided copper ground strap which provides good impact shock isolation from the refrigerator cold-tip while also providing a good thermal link to the cold-tip. The diode mount also contains a rigid stand-off assembly consisting of alternate sections of nylon and copper which serve as cold stations to improve thermal isolation from the vaccum housing mounting structure. Included in the mount is a Pb-In alloy wafer inserted between the cold-tip and the diode to damp temperature fluctuations occurring at the cold-tip.

Jennings, D. E.↗
NASA NTRS1979

Thermic diode performance characteristics and design manual

Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

Bernard, D. E.↗
NASA NTRS1981

The millimeter wave super-Schottky diode detector

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Silver, A. H.↗
NASA NTRS1981

Improved liquid phase epitaxial GaAs for low series resistance Schottky barrier mixer diodes

Millimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology. Initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. Two-micron diameter Schottky diodes fabricated from epitaxial layers grown at 725 C exhibit a 9-ohm series resistance very near the theoretical minimum.

Binari, S. C.↗
NASA NTRS1981

Schlieren with a laser diode source

The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.

Burner, A. W.↗