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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth is investigated. An existing RTR apparatus is to be upgraded to its full capabilities and operated routinely to investigate and optimize the effects of various growth parameters on growth results. A new RTR apparatus was constructed to incorporate increased capabilities and improvements over the first apparatus and to be capable of continuous growth. New high power lasers were implemented and this led to major improvements in growth velocity -- 4 inch/min. growth has been demonstrated. A major step in demonstration of the full feasibility of the RTR process is reported in the demonstration of RTR growth from CVD polyribbon rather than sliced polyribbon ingots. Average solar cell efficiencies of greater than 9% and a best cell efficiency of 11.7% are reported. Processing was shown to provide a substantial improvement in material minority carrier diffusion length. An economic analysis is reported which treats both the polyribbon fabrication and RTR processes.

Gurtler, R. W.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗
NASA NTRS1976

Silicon solar cells from transition metal doped Czochralski and web crystals

The influence of metallic impurities on solar cell characteristics has been examined to establish the cost sensitive purity versus performance trade-offs. Solar cells were fabricated on 2 to 4 ohm-cm p-type substrates obtained by Czochralski and dendritic web growth processes. Controlled amounts of metallic impurities were introduced into the melt during growth and included Fe, Cr, Mn, Ni, Cu, Ti, V, Zr, Mg, Zn, and Al. Impurity concentrations in the crystals were determined using emission and mass spectrographic techniques and in some cases by neutron activation analysis. The solar cells were characterized by means of a computer program to curve-fit measured voltage-current data. The principal effect of the added impurities is a degradation of lifetime and diffusion length.

Davis, J. R.↗
NASA NTRS1976

Some observations on the characteristics of low-cost silicon sheets

To meet the need for low cost silicon sheet material in the ERDA/JPL photovoltaics program, JPL has initiated a wide ranging technology development effort in crystal growth that includes several different technology thrusts. They range in scope from innovative ingot growth and multislice wafering, to shaped growth techniques, substrate-related processes and hot forming techniques. In this paper, some salient observations on materials resulting from these processes are reported. Included are multiblade wafering-induced damage studies, interface morphology studies on the heat exchanger cast silicon, some diffusion length measurements in thin silicon layers on ceramic substrates, and results on the equilibrium structure found in laser zone ribbon growth.

Digges, T. G., Jr.↗
NASA NTRS1978

A simple theory of back surface field /BSF/ solar cells

A theory of an n-p-p/+/ junction is developed, entirely based on Shockley's depletion layer approximation. Under the further assumption of uniform doping the electrical characteristics of solar cells as a function of all relevant parameters (cell thickness, diffusion lengths, etc.) can quickly be ascertained with a minimum of computer time. Two effects contribute to the superior performance of a BSF cell (n-p-p/+/ junction) as compared to an ordinary solar cell (n-p junction). The sharing of the applied voltage among the two junctions (the n-p and the p-p/+/ junction) decreases the dark current and the reflection of minority carriers by the builtin electron field of the p-p/+/ junction increases the short-circuit current. The theory predicts an increase in the open-circuit voltage (Voc) with a decrease in cell thickness. Although the short-circuit current decreases at the same time, the efficiency of the cell is virtually unaltered in going from a thickness of 200 microns to a thickness of 50 microns. The importance of this fact for space missions where large power-to-weight ratios are required is obvious.

Von Roos, O.↗
NASA NTRS1978

Defect distribution near the surface of electron-irradiated silicon

The surface-defect distributions of electron-irradiated n-type silicon have been investigated using a transient capacitance technique. Schottky, p-n junction, and MOS structures were used in profiling the defect distributions. Surface depletions of defects observed were attributed to the vacancy distribution, but not that of oxygen, and other capture centers' distributions. The vacancy diffusion length at 300 K was estimated to be about 3-6 microns.

Wang, K. L.↗
NASA NTRS1978

Analysis of the interaction of an electron beam with a solar cell. I. II

The short-circuit current generated by the electron beam of a scanning electron microscope when it impinges on the N-P junction of a solar cell is known to be dependent on the configuration used to investigate the cell's response, and the situation for one specific configuration is analyzed. This configuration is the case in which the highly collimated electron beam strikes the edge of a planar junction a variable distance away from the edge of the depletion layer. An earlier treatment is generalized to encompass the ohmic contact at the back surface. The analysis employing Fourier and Wiener-Hopf techniques shows that it is impractical to determine the bulk diffusion length of a solar cell by a SEM used in the studied configuration unless the ohmic contact is partially removed.

Von Roos, O.↗
NASA NTRS1977

Studies of silicon pn junction solar cells

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Lindholm, F. A.↗
NASA NTRS1978

Silicon Solar Cell Process Development, Fabrication and Analysis

Ribbon to Ribbon (RTR) solar cells processed from polycrystalline feedstock showed maximum AMO efficiency of 5.6%. Solar cells from single crystalline feedstock showed slightly higher efficiency than those from polycrystalline feedstock, indicating maximum efficiency of about 6.6% with SiO AR coating. Single crystalline control cells gave 11-12% AMO efficiencies demonstrating that the poor performance of the RTR solar was due to the low quality of material itself. Dendritic web solar cells from the standard process showed maximum AMO efficiency of 9.8% while efficiency of control solar cells were around 11-12%. Web solar cells from back surface field (BSF) process indicated maximum AMO efficiency of 10.9%. Some improvement in open circuit voltage was noticed from the BSF process. Small light spot scanning experiments were carried out on the solar cells from Wacker Silso, EFG, RTR, and dendritic web ribbons. Photoresponse results provided information on localized cell performance and grain size in polycrystalline material, and agreed quite well with the cell performance data, such as efficiency, minority carrier diffusion length, and spectral response.

Yoo, H. I.↗
NASA NTRS1979

Modeling of thin, back-wall silicon solar cells

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

Baraona, C. R.↗
NASA NTRS1979

Reverse annealing in radiation-damaged, silicon solar cells

In order to understand the results in terms of properties of the radiation induced defects, a combination of diffusion length measurements and defect data obtained from Deep Level Transient Spectroscopy were used. The results indicate that the defect at E sub v + 0.30 eV is responsible for the observed reversed annealing. The defect was identified as a boron-oxygen vacancy complex. This identification is a guide to processing efforts aimed at increasing the concentration of these radiation induced defects.

Weinberg, I.↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS1978

The impact of defects on the photovoltaic potential of RTR silicon ribbon

Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.

Baghdadi, A.↗
NASA NTRS1978

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1980

Large area silicon sheet by EFG

Recent advances toward silicon growth stations and improved electronic quality of multiplesilicon are discussed. These advances were made in large measure by studies in which the composition of the gas environment around the meniscus area was varied. By introducing gases such as CO2, CO, and CH4 into this region, reproducible increases in diffusion length and cell performance were realized, with the best large area (5 cm x 10 cm) cells exceeding 11% efficiency.

Source record↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗