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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Efficacy of an acoustic hailing device as an avian dispersal tool

Bird strikes are a major safety and financial concern for modern aviation. Audible stimuli are common bird dispersal techniques, but their effectiveness is limited by the saliency and relevance of the stimulus. Furthermore, high ambient sound levels present at airfields might require that effective audible stimuli rely more on total volume (i.e., exceeding physiological tolerances) than ecological relevance. Acoustic hailing devices (AHD) are capable of sound output with a narrow beam width and at volumes high enough to cause physical discomfort at long distances. We tested the effectiveness of an AHD as a dispersal tool on free-ranging birds recognized as hazardous to aviation safety at the Savannah River Site and Phinizy Swamp Nature Park in South Carolina and Georgia, respectively. Our study design included experimental trials with timed-interval counts of birds directly before and after AHD treatment. For most species, counts of birds associated with treatment periods (use of AHD) and control periods (no use of AHD) occurred on different days. Sound treatments yielded variable success at dispersing birds. Specifically, AHD treatment was effective for dispersing vultures (Coragyps atratus and Cathartes aura) and gulls (Laridae), and ineffective for dispersing blackbirds (Icteridae), diving ducks (Aythya, Bucephala, Oxyura), and coots (Fulica americana). These trials were conducted in a relatively quiet environment with birds that were unhabituated to excessive noise, and thus we cannot unequivocally recommend an AHD as a universally effective avian dispersing tool. Furthermore, future research should consider AHD testing integrated with other methods, as well as investigation of treatments that might be salient to specific target species.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2014

Chaotic coordinates for the Large Helical Device

The theory of quadratic-flux-minimizing (QFM) surfaces is reviewed, and numerical techniques that allow high-order QFM surfaces to be efficiently constructed for experimentally relevant, non-integrable magnetic fields are described. As a practical example, the chaotic edge of the magnetic field in the Large Helical Device (LHD) is examined. A precise technique for finding the boundary surface is implemented, the hierarchy of partial barriers associated with the near-critical cantori is constructed, and a coordinate system, which we call chaotic coordinates, that is based on a selection of QFM surfaces is constructed that simplifies the description of the magnetic field, so that flux surfaces become “straight” and islands become “square.”.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Functional materials and devices by self-assembly

The field of self-assembly has moved far beyond early work, where the focus was primarily the resultant beautiful two- and three-dimensional structures, to a focus on forming materials and devices with important properties either otherwise not available, or only available at great cost. Over the last few years, materials with unprecedented electronic, photonic, energy-storage, and chemical separation functionalities were created with self-assembly, while at the same time, the ability to form even more complex structures in two and three dimensions has only continued to advance. Self-assembly crosscuts all areas of materials. Functional structures have now been realized in polymer, ceramic, metallic, and semiconducting systems, as well as composites containing multiple classes of materials. Finally, as the field of self-assembly continues to advance, the number of highly functional systems will only continue to grow and make increasingly greater impacts in both the consumer and industrial space.

Materials for Devices↗
DOE OSTI2019

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗
DOE OSTI2015

Spin-anticrossing effects in Co–SiO{sub 2}–Fe and ZnO–SiO{sub 2}–CuO three-nanolayer devices

Highlights: • Development of a new spintronic device. • Development of spin anticrossing spectroscopy of nanolayers. • Development of theory of quantum spin-polarized filter. - Abstract: Presently we report measurements of the spin-anticrossing spectra in the Co–SiO{sub 2}–Fe and ZnO–SiO{sub 2}–CuO three-nanolayer sandwich structures. The spin-anticrossing spectra in these systems are quite specific, differing from those observed earlier in other similar structures built of different materials. The theoretical model developed earlier is extended and used to interpret the available experimental results. A detailed ab initio analysis of the magnetic-field dependence of the output magnetic moment is also performed. The model predicts a spin-anticrossing spectrum comprising a series of peaks, with the spectral structure determined by several factors, discussed in the paper.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Toward Hot Carrier Extraction in Intervalley Photovoltaic Devices

InGaAs heterostructures have demonstrated the means to maintain hot carrier behavior under practical operating conditions via valley photovoltaics. However, enhancing the extraction to create a fully operational hot carrier solar cell requires an enhanced understanding of the barriers inside such devices. A set of four InGaAs heterostructures altering the n + top layer of the structure has been produced to enable comparative analysis of the current density-voltage characterization and the relationship to the band and valley alignments.

14 SOLAR ENERGY↗
DOE OSTI2015

Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Toward exascale whole-device modeling of fusion devices: Porting the GENE gyrokinetic microturbulence code to GPU

GENE solves the five-dimensional gyrokinetic equations to simulate the development and evolution of plasma microturbulence in magnetic fusion devices. The plasma model used is close to first principles and computationally very expensive to solve in the relevant physical regimes. In order to use the emerging computational capabilities to gain new physics insights, several new numerical and computational developments are required. Here, we focus on the fact that it is crucial to efficiently utilize GPUs (graphics processing units) that provide the vast majority of the computational power on such systems. In this paper, we describe the various porting approaches considered and given the constraints of the GENE code and its development model, justify the decisions made, and describe the path taken in porting GENE to GPUs. We introduce a novel library called gtensor that was developed along the way to support the process. Performance results are presented for the ported code, which in a single node of the Summit supercomputer achieves a speed-up of almost 15× compared to running on central processing unit (CPU) only. Typical GPU kernels are memory-bound, achieving about 90% of peak. Our analysis shows that there is still room for improvement if we can refactor/fuse kernels to achieve higher arithmetic intensity. We also performed a weak parallel scalability study, which shows that the code runs well on a massively parallel system, but communication costs start becoming a significant bottleneck.

Germaschewski, K. (ORCID:0000000284956354)↗
DOE OSTI2023

QASMTrans: A QASM Quantum Transpiler Framework for NISQ Devices

In quantum computing, transpilation plays a crucial role in converting high-level, machine-independent quantum circuits into circuits specially for a quantum device, considering factors such as basis gate set, topology, error profile, etc. Yet, the efficiency of transpilation remains a significant bottleneck, particularly when dealing with very large QASM level input files. In this paper, we present QASMTrans, a C++ based high-performance quantum transpiler framework that can demonstrate on average 50-100× speedups compared to the internal transpiler of Qiskit. Particularly, for large dense circuits such as ’uccsd n24’ and ’qft n320’ incorporating millions of gates, QASMTrans can successfully transpile in 69s and 31s, respectively, while Qiskit failed to finish in one hour. Using QASMTrans as the baseline, it becomes more feasible to explore much larger design space and impose more comprehensive compiler optimizations.

Hua, Fei↗
DOE OSTI2021

Collaboration on SBIR/TTO Phase II Project for Optical QC Device and Collaboration on SBIR/TTO Phase II-b Project for Advanced Quality Inspection Device Development: Cooperative Research and Development CRADA Number CRD-16-00652 (Final Report)

The overall goal of this program is to develop and commercialize a turnkey quality control solution for the entire PEM fuel cell manufacturing process including membrane, gas diffusion layers, catalyst, and assembled systems. This quality control solution is unique to each customer’s specific needs but includes a suite of in-line quality control systems for roll-to-roll manufacturing that can target thin, transparent membrane as well as opaque membrane, catalyst, and GDLs. The Phase II developed the CPNUVV system for thin, transparent membrane that operates using polarized filters to enhance defect resolution and determine thickness. However, PEM material manufacturers want a complete, turnkey solution for all components of the PEM fuel cell. In the Phase IIB, Mainstream will partner with NREL, and transition reflectance technology NREL developed (US Patent 9,234,843) to operate in real-time on a web-line to develop a total solution to PEM quality control. The device will identify and mark defects as well as monitor materials thickness in real-time to improve line efficiency and to reduce waste. The research performed at NREL under this CRADA increases the basis of knowledge about optical inspection methods, how they perform with regards to fuel cell component materials, and how they can be implemented in in-line, real-time configurations to provide quality inspection for roll-to-roll (R2R) manufacturing. Methods explored were found to be sensitive to catalyst loading in electrodes on both membrane and gas diffusion media substrates and to membrane thickness, across a broad range of thickness. The latter capability is novel and now patented and provides a previously unstudied and undemonstrated capability for R2R manufacturing of membranes.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2014

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k) of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS) specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS), bipolar (Bi) and BiCMOS chips applications, is presented in this review article.

metal-oxide-semiconductor↗