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At least 163 records · Page 9

Growth experiment of narrow band-gap semiconductor PbSnTe single crystals in space (M-1)

An experiment on crystal growth of Pb(1-x)Sn(x)Te in microgravity is planned. This material is an alloy of the compound semiconductors PbTe and SnTe. It is a promising material for infrared diode lasers and detectors in the wavelength region between 6 and 30 micron. Since the electrical properties of Pb(1-x)Sn(x)Te depend greatly on the Pb/Sn ratio and crystalline defects as well as impurity concentration, homogeneous, defect-free, high-quality crystals are anticipated. Although many growth methods, such as the pulling method, the Bridgman method, the vapor growth method, etc., have been applied to the growth of Pb(1-x)Sn(x)Te, large, homogeneous, low-defect-density crystals have not yet been grown on Earth. The unsuccessful results were caused by buoyancy-driven convection in the fluids induced by the specific gravity difference between heated and cooled fluids on Earth. A crystal is grown by cooling the melt from one end of the ampoule. In crystal growth from the melt, about 30 percent of the SnTe in the melt is rejected at the solid-liquid interface during solidification. On Earth, the rejected SnTe is completely mixed with the remaining melt by convection in the melt. Therefore, SnTe concentration in the melt, and accordingly in the crystal, increases as the crystal grows. In the microgravity environment, buoyancy-driven convection is suppressed because the specific gravity difference is negligible. In that case, the rejected SnTe remains at the solid-liquid interface and its concentration increases only at the interface. If the growth rate is higher than the PbTe-SnTe interdiffusion rate, the amount of SnTe which diffuses from the interface into the melt increases as SnTe piles up at the interface, and finally it balances the amount of rejected SnTe during solidification, resulting in steady-state SnTe transportation at the interface. By using this principle, compositionally homogeneous crystals can be grown. Furthermore, low-defect-density crystals will be grown in microgravity, because convection causes crystalline defects by mising hot and cold fluids and generating temperature fluctuations in them.

Yamada, Tomoaki↗

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗

Process Research on Polycrystalline Silicon Material (PROPSM)

Results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Very small grain or short minority-carrier diffusion length silicon was used. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is sometimes 20 to 40 mV less. The goal was to minimize variations in open-circuit voltage and fill-factor caused by defects by passivating these defects using a hydrogenation process. Treatments with molecular hydrogen showed no effect on large-grain cast polycrystaline silicon solar cells.

Culik, J. S.↗

Design principles for high efficiency small-grain polysilicon solar cells, with supporting experimental studies

Design principles suggested here aim toward high conversion efficiency (greater than 15 percent) in polysilicon cells. The principles seek to decrease the liabilities of both intragranular and grain-boundary-surface defects. The advantages of a phosphorus atom concentration gradient in a thin (less than 50 microns) base of a p(+)/n(x)/n(+) drift-field solar cell, which produces favorable gradients in chemical potential, minority-carrier mobility and diffusivity, and recombination lifetime (via phosphorus gettering) are suggested. The degrading effects of grain boundaries are reduced by these three gradients and by substituting atoms (P, H, F or Li) for vacancies on the grain-boundary surface. From recent experiments comes support for the benefits of P diffusion down grain boundaries and, for quasi-grain-boundary-free and related structures. New analytic solutions for the n(x)-base include the effect of a power-law dependence between P concentration and lifetime. These provide an upper-bound estimate on the open circuit voltage. Finite-difference numerical solutions of the six Shockley equations furnish complete information about all solar-cell parameters and add insight concerning design.

Lindholm, F. A.↗

Detection of Objects Hidden in Highly Scattering Media Using Time-Gated Imaging Methods

Non-intrusive and non-invasive optical imaging techniques has generated great interest among researchers for their potential applications to biological study, device characterization, surface defect detection, and jet fuel dynamics. Non-linear optical parametric amplification gate (NLOPG) has been used to detect back-scattered images of objects hidden in diluted Intralipid solutions. To directly detect objects hidden in highly scattering media, the diffusive component of light needs to be sorted out from early arrived ballistic and snake photons. In an optical imaging system, images are collected in transmission or back-scattered geometry. The early arrival photons in the transmission approach, always carry the direct information of the hidden object embedded in the turbid medium. In the back-scattered approach, the result is not so forth coming. In the presence of a scattering host, the first arrival photons in back-scattered approach will be directly photons from the host material. In the presentation, NLOPG was applied to acquire time resolved back-scattered images under the phase matching condition. A time-gated amplified signal was obtained through this NLOPG process. The system's gain was approximately 100 times. The time-gate was achieved through phase matching condition where only coherent photons retain their phase. As a result, the diffusive photons, which were the primary contributor to the background, were removed. With a large dynamic range and high resolution, time-gated early light imaging has the potential for improving rocket/aircraft design by determining jets shape and particle sizes. Refinements to these techniques may enable drop size measurements in the highly scattering, optically dense region of multi-element rocket injectors. These types of measurements should greatly enhance the design of stable, and higher performing rocket engines.

Galland, Pierre A.↗

Transport Equation Based Wall Distance Computations Aimed at Flows With Time-Dependent Geometry

Eikonal, Hamilton-Jacobi and Poisson equations can be used for economical nearest wall distance computation and modification. Economical computations may be especially useful for aeroelastic and adaptive grid problems for which the grid deforms, and the nearest wall distance needs to be repeatedly computed. Modifications are directed at remedying turbulence model defects. For complex grid structures, implementation of the Eikonal and Hamilton-Jacobi approaches is not straightforward. This prohibits their use in industrial CFD solvers. However, both the Eikonal and Hamilton-Jacobi equations can be written in advection and advection-diffusion forms, respectively. These, like the Poisson s Laplacian, are commonly occurring industrial CFD solver elements. Use of the NASA CFL3D code to solve the Eikonal and Hamilton-Jacobi equations in advective-based forms is explored. The advection-based distance equations are found to have robust convergence. Geometries studied include single and two element airfoils, wing body and double delta configurations along with a complex electronics system. It is shown that for Eikonal accuracy, upwind metric differences are required. The Poisson approach is found effective and, since it does not require offset metric evaluations, easiest to implement. The sensitivity of flow solutions to wall distance assumptions is explored. Generally, results are not greatly affected by wall distance traits.

Tucker, Paul G.↗

Transport Equation Based Wall Distance Computations Aimed at Flows With Time-Dependent Geometry

Eikonal, Hamilton-Jacobi and Poisson equations can be used for economical nearest wall distance computation and modification. Economical computations may be especially useful for aeroelastic and adaptive grid problems for which the grid deforms, and the nearest wall distance needs to be repeatedly computed. Modifications are directed at remedying turbulence model defects. For complex grid structures, implementation of the Eikonal and Hamilton-Jacobi approaches is not straightforward. This prohibits their use in industrial CFD solvers. However, both the Eikonal and Hamilton-Jacobi equations can be written in advection and advection-diffusion forms, respectively. These, like the Poisson's Laplacian, are commonly occurring industrial CFD solver elements. Use of the NASA CFL3D code to solve the Eikonal and Hamilton-Jacobi equations in advective-based forms is explored. The advection-based distance equations are found to have robust convergence. Geometries studied include single and two element airfoils, wing body and double delta configurations along with a complex electronics system. It is shown that for Eikonal accuracy, upwind metric differences are required. The Poisson approach is found effective and, since it does not require offset metric evaluations, easiest to implement. The sensitivity of flow solutions to wall distance assumptions is explored. Generally, results are not greatly affected by wall distance traits.

Tucker, Paul G.↗

The growth of zeolites A, X and mordenite in space

Zeolites are a class of crystalline aluminosilicate materials that form the backbone of the chemical process industry worldwide. They are used primarily as adsorbents and catalysts and support to a significant extent the positive balance of trade realized by the chemical industry in the United States (around $19 billion in 1991). The magnitude of their efforts can be appreciated when one realizes that since their introduction as 'cracking catalysts' in the early 1960's, they have saved the equivalent of 60 percent of the total oil production from Alaska's North Slope. Thus the performance of zeolite catalysts can have a profound effect on the U.S. economy. It is estimated that a 1 percent increase in yield of the gasoline fraction per barrel of oil would represent a savings of 22 million barrels of crude oil per year, representing a reduction of $400 million in the United States' balance of payments. Thus any activity that results in improvement in zeolite catalyst performance is of significant scientific and industrial interest. In addition, due to their 'stability,' uniformity, and, within limits, their 'engineerable' structures, zeolites are being tested as potential adsorbents to purify gases and liquids at the parts-per-billion levels needed in today's electronic, biomedical, and biotechnology industries and for the environment. Other exotic applications, such as host materials for quantum-confined semiconductor atomic arrays, are also being investigated. Because of the importance of this class of material, extensive efforts have been made to characterize their structures and to understand their nucleation and growth mechanisms, so as to be able to custom-make zeolites for a desired application. To date, both the nucleation mechanics and chemistry (such as what are the 'key' nutrients) are, as yet, still unknown for many, if not all, systems. The problem is compounded because there is usually a 'gel' phase present that is assumed to control the degree of supersaturation, and this gel undergoes a continuous 'polymerization' type reaction during nucleation and growth. Generally, for structure characterization and diffusion studies, which are useful in evaluating zeolites for improving yield in petroleum refining as well as for many of the proposed new applications (e.g., catalytic membranes, molecular electronics, chemical sensors) large zeolites (greater than 100 to 1000 times normal size) with minimum lattice defects are desired. Presently, the lack of understanding of zeolite nucleation and growth precludes the custom design of zeolites for these or other uses. It was hypothesized that the microgravity levels achieved in an orbiting spacecraft could help to isolate the possible effects of natural convection (which affects defect formation) and minimize sedimentation, which occurs since zeolites are twice as dense as the solution from which they are formed. This was expected to promote larger crystals by allowing growing crystals a longer residence time in a high-concentration nutrient field. Thus it was hypothesized that the microgravity environment of Earth orbit would allow the growth of large, more defect-free zeolite crystals in high yield.

Sacco, Albert, Jr.↗

Calculations of the displacement damage and short-circuit current degradation in proton irradiated (AlGa)As-GaAs solar cells

A theoretical model for computing the displacement damage defect density and the short-circuit current (I sub sc) degradation in proton-irradiated (AlGa)As-GaAs p-n junction solar cells is presented. Assumptions were made with justification that the radiation induced displacement defects form an effective recombination center which controls the electron and hole lifetimes in the junction space charge region and in the n-GaAs active layer of the irradiated GaAs p-n junction cells. The degradation of I sub sc in the (AlGa)As layer was found to be negligible compared to the total degradation. In order to determine the I sub sc degradation, the displacement defect density, path length, range, reduced energy after penetrating a distance x, and the average number of displacements formed by one proton scattering event were first calculated. The I sub sc degradation was calculated by using the electron capture cross section in the p-diffused layer and the hole capture cross section in the n-base layer as well as the wavelength dependent absorption coefficients. Excellent agreement was found between the researchers calculated values and the measured I sub sc in the proton irradiated GaAs solar cells for proton energies of 100 KeV to 10 MeV and fluences from 10 to the 10th power p/square cm to 10 to the 12th power p/square cm.

Yeh, C. S.↗

In-Field Diffuse Ultraviolet Spectroscopy and Imaging of the Stardust Sample Return Capsule

In-field diffuse Ultraviolet (UV) spectroscopy and imaging systems were developed for the purposes of evaluating the surface chemical composition of spacecraft thermal control coatings and materials. The investigation of these systems and the compilation of an associated UV reflectance and luminescence database were conducted using the Stardust Sample Return Capsule (SRC), located at the Johnson Space Center. Spectral responses of the surfaces of the Stardust forebody and aftbody in both reflectance and fluorescence modes were examined post-flight. In this paper, we report on two primary findings of in-field diffuse UV spectroscopy and imaging: (1) deduction of the thermal history of thermal control coatings of the forebody and (2) bond line variations in the aftbody. In the forebody, the thermal history of thermal control coatings may be deduced from the presence of particular semiconducting defect states associated with ZnO, a common emissivity constituent in thermal control coatings. A spatial dependence of this history was mapped for these regions. In the aftbody, luminescing defect states, associated with Si and SiO2 color centers were found along regions of bond variability.

Pugel, D. Elizabeth↗

Radiation Effects of Protons and Electrons in Silicon Diffused-Junction Detectors

Diffused n-on-p silicon particle detectors were irradiated with 1-Mev electrons, and with 31-Mev and 8.2-Mev protons. The detector capacitance was observed to increase with electron irradiation and to decrease with proton irradiation. A physical interpretation is given in terms of defect energy levels known to be introduced in silicon by irradiation. Defect ionization states are taken to be characteristic of the space-charge region, rather than of bulk silicon. The relation to other studies of damage in semiconductor particle detectors is pointed out, considering differences in the types of detector and irradiation used. The significance of these results is discussed for detector applications where the damage threshold is exceeded.

Scott, R. E.↗

Test Structures For Bumpy Integrated Circuits

Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.

Buehler, Martin G.↗

The evolution and growth of Al2O3 scales on beta-NiAl

The formation and growth of Al2O3 scales on (beta)-NiAl were studied using electron microscopy and other analytical techniques to gain an understanding of the oxidation properties of (beta)-NiAl and of alumina-forming alloys, in general. The transient and mature stages of oxidation were studied as well as the transformation stage during which the oxide scale transforms from metastable Al2O3 phases to the thermodynamically stable alpha-Al2O3 phase. The transient oxidation stages were studied at 800 deg C and for short times at 1100C. At 800C, the scales consist predominantly of delta-Al2O3 which forms by cation vacancy ordering in the defective spinel lattice of gamma-Al2O3. At 1100C, a fast-growth morphology of theta-Al2O3 forms as a surface layer over delta-Al2O3. For both oxidation temperatures, the scales are often epitaxially oriented with respect to the metal. The transient scales grow by outward cation diffusion as evidenced by surface growth morphologies. The transformation to alpha-Al2O3 occurs within 1 hour at 1100C by a nucleation and radial growth process. The large volume decrease associated with the transformation results in a highly strained alpha-Al2O3 microstructure. A change in scale growth mechanism from outward cation to inward anion diffusion allows transient surface morphologies to be smoothed by surface diffusion. The mature stage of oxidation involves the growth of an alpha-Al2O3 scale having the lacey morphology formed as a result of the gamma yields alpha transformation. Growth of the scale occurs by counterdiffusion along grain boundaries resulting in ridges formed by impingement of alpha-Al2O3 nuclei during the transformation stage. Also scale growth occurs by inward oxygen diffusion through healed cracks; the cracks result from transformation stresses. The measured growth rates of scales having the lacey morphology are an order of magnitude less than fine-grained alpha-Al2O3 scales. Metal orientations were found to have a large effect on oxide morpholoies during all stages of oxidation.

Doychak, J. K.↗

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗

Development of Eddy Current Techniques for Detection of Deep Fatigue Cracks in Multi-Layer Airframe Components

Thick, multi-layer aluminum structure has been widely used in aircraft design in critical wing splice areas. The multi-layer structure generally consists of three or four aluminum layers with different geometry and varying thickness, which are held together with fasteners. The detection of cracks under fasteners with ultrasonic techniques in subsurface layers away from the skin is impeded primarily by interlayer bonds and faying sealant condition. Further, assessment of such sealant condition is extremely challenging in terms of complexity of structure, limited access, and inspection cost. Although Eddy current techniques can be applied on in-service aircraft from the exterior of the skin without knowing sealant condition, the current eddy current techniques are not able to detect defects with wanted sensitivity. In this work a series of low frequency eddy current probes have been designed, fabricated and tested for this application. A probe design incorporating a shielded magnetic field sensor concentrically located in the interior of a drive coil has been employed to enable a localized deep diffusion of the electromagnetic field into the part under test. Due to the required low frequency inspections, probes have been testing using a variety of magnetic field sensors (pickup coil, giant magneto-resistive, anisotropic magneto-resistive, and spin-dependent tunneling). The probe designs as well as capabilities based upon a target inspection for sub-layer cracking in an airframe wing spar joint is presented.

Wincheski, Russell A.↗

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗

Impurities in silicon solar cells

The paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.

Davis, J. R., Jr.↗

Review of acousto-ultrasonic NDE for composites

Acousto-ultrasonics utilizes simulated stress waves to detect and quantify defect states, damage conditions, and variations of mechanical properties in fiber reinforced composites. The term acousto-ultrasonics denotes a combination of aspects of acoustic emission methodology with ultrasonic materials characterization. The acousto-ultrasonic approach was developed to deal primarily with evaluation of the integrated effect of minor flaws and diffuse flaw populations of subcritical flaws in composite and bonded structures. These factors singly and collectively also influence acousto-ultrasonic measurements that, in turn, correlate with dynamic response and mechanical property variations. Since it was first introduced, the acousto-ultrasonic approach was successfully applied to a variety of materials, including polymeric, metallic, and ceramic matrix composites; adhesively bonded materials; paper and wood products; cable and rope; and also human bone. Examples of applications and limitations of the approach are reviewed. Basic methods and guidelines are discussed. The underlying hypothesis and theory development needs are indicated.

Vary, Alex↗