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Simultaneous fabrication of enhancement mode metal oxide semiconductor transistors in epitaxial material
MOS transistor structures with enhancement mode of operation, discussing fabrication processes via V-C characteristics, temperature effects on performance, etc
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in complimentary circuits in integrated circuit array
Breadboard model is tuned to produce output pulses from one microsecond up to several seconds in width with up to 95 percent duty cycle, and with lower power consumption than previously existing circuits.
Metal oxide semiconductor four-stage binary counter contains reset capability as well as four parallel-set inputs gated in by a logic signal. Parallel-set inputs permit setting the counter into any of sixteen possible states.
Switching circuit with regeneratively connected transistors eliminating power consumption when not in use
Metal oxide silicon field effect transistors for integrated circuitry in data processing
Monostable multivibrator for producing output pulse widths with positive feedback NOR gates
Speed required for Sisyphus experiment on Pioneer probe was attained at supply voltage well within component limitations by combining supply voltage higher than nominal with low reactance interconnections. Speed was found to be far in excess of typical. parameters suggested by manufacturers of MOS devices.
Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.
Fabrication method is described for alumina passivated silicon MISFET arrays. Technique involves total passivation beam-lead approach and provides completely sealed chip with double level interconnect capability. Refractory metal alloy is used to form interconnect system and obtain metal contacts that withstand temperatures of 873 K for short periods of time.
Technique can provide four-phase clock signal from single-phase clock and requires only one power supply voltage. This arrangement saves considerable power compared to circuits having load resistor between power supply and ground.
A shielded integrated complimentary MOS transistor structure is described which is used to prevent field inversion in the region not occupied by the gates and which permits the use of a thinner field oxide, reduces the chip area, and has provision for simplified multilayer connections. The structure is used in the design of a static shift register and results in a 20% reduction in area.
The materials studied are described along with the apparatus and the experimental techniques employed. The results of the measurements involving two REI Silica materials and a Mod 1 B REI Mullite are listed in a table. Measurements were conducted at unusually high temperature differences to detect 'shine-through' radiation transparency. Photographs are presented of the high-temperature guarded hot plate assembly.
Topics discussed include the need for: the conception and development of a wide spectrum of experiments, instruments, and vehicles in order to derive the proper return from an exploration program; the effective use of alternative methods of data acquisition involving ground-based, airborne and near Earth orbital techniques to supplement spacraft mission; and continued reduction and analysis of existing data including laboratory and theoretical studies in order to benefit fully from experiments and to build on the past programs toward a logical and efficient exploration of the solar system.
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A high speed CMOS formed on a single semiconductor substrate includes a DMOS having an asymmetric channel and a VMOS with a relatively short channel length. The short channel length of the VMOS is achieved by forming a double diffusion along one edge of a V groove, or ion implanting boron into the apex of the V groove and diffusing a single layer to a relatively deep depth along both edges of the groove.
Accomplishments with regard to the mapping and analysis of MAGSAT data for the investigation of correlations between the magnetic field characteristics of South American and African shields are reported. Significant results in the interpretation of the global total-field anomalies and the anomaly patterns of Africa and South America are discussed. The central position of the Brazilian shield tends to form a negative total-field anomaly, consistent with findings for shields in equatorial Africa. Sedimentary sequences in the Amazon basin and in the Rio de Janeiro-Sao Paolo areas exhibit positive anomalies, also consistent with equatorial Africa. Results for the Caribbean Sea and Guyana regions are also described.