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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

A Synthesis of Star Calibration Techniques for Ground-Based Narrowband Electron-Multiplying Charge-Coupled Device Imagers Used in Auroral Photometry

A technique is presented for the periodic and systematic calibration of ground-based optical imagers. It is important to have a common system of units (Rayleighs or photon flux) for cross comparison as well as self-comparison over time. With the advancement in technology, the sensitivity of these imagers has improved so that stars can be used for more precise calibration. Background subtraction, flat fielding, star mapping, and other common techniques are combined in deriving a calibration technique appropriate for a variety of ground-based imager installations. Spectral (4278, 5577, and 8446 A ) ground-based imager data with multiple fields of view (19, 47, and 180 deg) are processed and calibrated using the techniques developed. The calibration techniques applied result in intensity measurements in agreement between different imagers using identical spectral filtering, and the intensity at each wavelength observed is within the expected range of auroral measurements. The application of these star calibration techniques, which convert raw imager counts into units of photon flux, makes it possible to do quantitative photometry. The computed photon fluxes, in units of Rayleighs, can be used for the absolute photometry between instruments or as input parameters for auroral electron transport models.

Grubbs, Guy II↗
NASA NTRS2005

Comparison of Detector Technologies for CAPS

In this paper, several different detectors are examined for use in a Comet/Asteroid Protection System (CAPS), a conceptual study for a possible future space-based system. Each detector will be examined for its future (25 years or more in the future) ability to find and track near-Earth Objects (NEOs) from a space-based detection platform. Within the CAPS study are several teams of people who each focus on different aspects of the system concept. This study s focus is on detection devices. In particular, evaluations on the following devices have been made: charge-coupled devices (CCDs), charge-injected devices (CIDs), superconducting tunneling junctions (STJs), and transition edge sensors (TESs). These devices can be separated into two main categories; the first category includes detectors that are currently being widely utilized, such as CCDs and CIDs. The second category includes experimental detectors, such as STJs and TESs. After the discussion of the detectors themselves, there will be a section devoted to the explicit use of these detectors with CAPS.

Stockum, Jana L.↗
NASA NTRS1972

Trends in solid state electronics, part 2

Developments in the fields of semiconductors and magnetics are surveyed. Materials, devices, theory, and fabrication technology are discussed. Important events up until the present time are reported, and events are interpreted through historical perspective. A brief analysis of forces which have driven the development of today's electronic technology and some projections of present trends are given. More detailed discussions are presented for four areas of contemporary interest: amorphous semiconductors, bubble domain devices, charge-coupled devices, and electron and ion beam techniques. Beam addressed magnetic memories are reviewed to a lesser extent.

Gassaway, J. D.↗
NASA NTRS1979

Real-time onboard geometric image correction

A system to perform real time onboard geometric connection of LANDSAT D resolution satellite imagery is described. System requirements, algorithms, sensors, and other hardware components are defined. Feasibility of implementing the correction process is demonstrated using Kalman filter techniques to incorporate information from onboard ephemeris, attitude control, and ground control points. Random access sensor systems, such as charge injected devices and charge coupled devices are used to obtain pixel values at desired ground location, thus greatly reducing the data processing requirements.

Discenza, W.↗
NASA NTRS1999

Active pixel sensor array with multiresolution readout

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

Fossum, Eric R.↗
NASA NTRS2000

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗
NASA NTRS1995

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2003

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2004

Active pixel sensor with intra-pixel charge transfer

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS2003

Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Fossum, Eric R.↗
NASA NTRS2006

Method of acquiring an image from an optical structure having pixels with dedicated readout circuits

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Fossum, Eric R.↗
NASA NTRS1986

CCD imager with photodetector bias introduced via the CCD register

An infrared charge-coupled-device (IR-CCD) imager uses an array of Schottky-barrier diodes (SBD's) as photosensing elements and uses a charge-coupled-device (CCD) for arranging charge samples supplied in parallel from the array of SBD's into a succession of serially supplied output signal samples. Its sensitivity to infrared (IR) is improved by placing bias charges on the Schottky barrier diodes. Bias charges are transported to the Schottky barrier diodes by a CCD also used for charge sample read-out.

Kosonocky, Walter F.↗
NASA NTRS2021

Calibration of the SHERLOC Deep Ultraviolet Fluorescence–Raman Spectrometer on the Perseverance Rover

We describe the wavelength calibration of the spectrometer for the scanning of habitable environments with Raman and luminescence for organics and chemicals (SHERLOC) instrument onboard NASA’s Perseverance Rover. SHERLOC utilizes deep ultraviolet Raman and fluorescence (DUV R/F) spectroscopy to enable analysis of samples from the Martian surface. SHERLOC employs a 248.6 nm deep ultraviolet laser to generate Raman-scattered photons and native fluorescence emission photons from near-surface material to detect and classify chemical and mineralogical compositions. The collected photons are focused on a charge-coupled device and the data are returned to Earth for analysis. The compact DUV R/F spectrometer has a spectral range from 249.9 nm to 353.6 nm (200 cm1 to 12, 000 cm1) (with a spectral resolution of 0.296 nm (40 cm1)). The compact spectrometer uses a custom design to project a high-resolution Raman spectrum and a low-resolution fluorescence spectrum on a single charge-coupled device. The natural spectral separation enabled by deep ultraviolet excitation enables wavelength separation of the Raman/fluorescence spectra. The SHERLOC spectrometer was designed to optimize the resolution of the Raman spectral region and the wavelength range of the fluorescence region. The resulting illumination on the charge-coupled device is curved, requiring a segmented, nonlinear wavelength calibration in order to understand the mineralogy and chemistry of Martian materials.

Kyle Uckert↗
NASA NTRS2005

Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Fossum, Eric R.↗
NASA NTRS2006

Ice-Borehole Probe

An instrumentation system has been developed for studying interactions between a glacier or ice sheet and the underlying rock and/or soil. Prior borehole imaging systems have been used in well-drilling and mineral-exploration applications and for studying relatively thin valley glaciers, but have not been used for studying thick ice sheets like those of Antarctica. The system includes a cylindrical imaging probe that is lowered into a hole that has been bored through the ice to the ice/bedrock interface by use of an established hot-water-jet technique. The images acquired by the cameras yield information on the movement of the ice relative to the bedrock and on visible features of the lower structure of the ice sheet, including ice layers formed at different times, bubbles, and mineralogical inclusions. At the time of reporting the information for this article, the system was just deployed in two boreholes on the Amery ice shelf in East Antarctica and after successful 2000 2001 deployments in 4 boreholes at Ice Stream C, West Antarctica, and in 2002 at Black Rapids Glacier, Alaska. The probe is designed to operate at temperatures from 40 to +40 C and to withstand the cold, wet, high-pressure [130-atm (13.20-MPa)] environment at the bottom of a water-filled borehole in ice as deep as 1.6 km. A current version is being outfitted to service 2.4-km-deep boreholes at the Rutford Ice Stream in West Antarctica. The probe (see figure) contains a sidelooking charge-coupled-device (CCD) camera that generates both a real-time analog video signal and a sequence of still-image data, and contains a digital videotape recorder. The probe also contains a downward-looking CCD analog video camera, plus halogen lamps to illuminate the fields of view of both cameras. The analog video outputs of the cameras are converted to optical signals that are transmitted to a surface station via optical fibers in a cable. Electric power is supplied to the probe through wires in the cable at a potential of 170 VDC. A DC-to-DC converter steps the supply down to 12 VDC for the lights, cameras, and image-data-transmission circuitry. Heat generated by dissipation of electric power in the probe is removed simply by conduction through the probe housing to the visible features of the lower structure of the ice sheet, including ice layers formed at different times, bubbles, and mineralogical inclusions. At the time of reporting the information for this article, the system was just deployed in two boreholes on the Amery ice shelf in East Antarctica and after successful 2000 2001 deployments in 4 boreholes at Ice Stream C, West Antarctica, and in 2002 at Black Rapids Glacier, Alaska. The probe is designed to operate at temperatures from 40 to +40 C and to withstand the cold, wet, high-pressure [130-atm (13.20-MPa)] environment at the bottom of a water-filled borehole in ice as deep as 1.6 km. A current version is being outfitted to service 2.4-km-deep boreholes at the Rutford Ice Stream in West Antarctica. The probe (see figure) contains a sidelooking charge-coupled-device (CCD) camera that generates both a real-time analog video signal and a sequence of still-image data, and contains a digital videotape recorder. The probe also contains a downward-looking CCD analog video camera, plus halogen lamps to illuminate the fields of view of both cameras. The analog video outputs of the cameras are converted to optical signals that are transmitted to a surface station via optical fibers in a cable. Electric power is supplied to the probe through wires in the cable at a potential of 170 VDC. A DC-to-DC converter steps the supply down to 12 VDC for the lights, cameras, and image-datatransmission circuitry. Heat generated by dissipation of electric power in the probe is removed simply by conduction through the probe housing to the visible features of the lower structure of the ice sheet, including ice layers formed at different times, bubbles, and mineralogical inclusions. At thime of reporting the information for this article, the system was just deployed in two boreholes on the Amery ice shelf in East Antarctica and after successful 2000 2001 deployments in 4 boreholes at Ice Stream C, West Antarctica, and in 2002 at Black Rapids Glacier, Alaska. The probe is designed to operate at temperatures from 40 to +40 C and to withstand the cold, wet, high-pressure [130-atm (13.20-MPa)] environment at the bottom of a water-filled borehole in ice as deep as 1.6 km. A current version is being outfitted to service 2.4-km-deep boreholes at the Rutford Ice Stream in West Antarctica. The probe (see figure) contains a sidelooking charge-coupled-device (CCD) camera that generates both a real-time analog video signal and a sequence of still-image data, and contains a digital videotape recorder. The probe also contains a downward-looking CCD analog video camera, plus halogen lamps to illuminate the fields of view of both cameras. The analog video outputs of the cameras are converted to optical signals that are transmitted to a surface station via optical fibers in a cable. Electric power is supplied to the probe through wires in the cable at a potential of 170 VDC. A DC-to-DC converter steps the supply down to 12 VDC for the lights, cameras, and image-datatransmission circuitry. Heat generated by dissipation of electric power in the probe is removed simply by conduction through the probe housing to the adjacent water and ice.

Behar, Alberto↗
NASA NTRS1978

Assessment study of infrared detector arrays for low-background astronomical research

The current state-of-the-art of infrared detector arrays employing charge coupled devices (CCD) or charge injection devices (CID) readout are assessed. The applicability, limitations and potentials of such arrays under the low-background astronomical observing conditions of interest for SIRFT (Shuttle Infrared Telescope Facility) are determined. The following are reviewed: (1) monolithic extrinsic arrays; (2) monolithic intrinsic arrays; (3) charge injection devices; and (4) hybrid arrays.

Ando, K. J.↗