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DOE OSTI2020

Quantum computation of silicon electronic band structure

Development of quantum architectures during the last decade has inspired hybrid classical–quantum algorithms in physics and quantum chemistry that promise simulations of fermionic systems beyond the capability of modern classical computers, even before the era of quantum computing fully arrives. Strong research efforts have been recently made to obtain minimal depth quantum circuits which could accurately represent chemical systems. Here, we show that unprecedented methods used in quantum chemistry, designed to simulate molecules on quantum processors, can be extended to calculate properties of periodic solids. In particular, we present minimal depth circuits implementing the variational quantum eigensolver algorithm and successfully use it to compute the band structure of silicon on a quantum machine for the first time. We are convinced that the presented quantum experiments performed on cloud-based platforms will stimulate more intense studies towards scalable electronic structure computation of advanced quantum materials.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Efficient calculation of carrier scattering rates from first principles

Abstract The electronic transport behaviour of materials determines their suitability for technological applications. We develop a computationally efficient method for calculating carrier scattering rates of solid-state semiconductors and insulators from first principles inputs. The present method extends existing polar and non-polar electron-phonon coupling, ionized impurity, and piezoelectric scattering mechanisms formulated for isotropic band structures to support highly anisotropic materials. We test the formalism by calculating the electronic transport properties of 23 semiconductors, including the large 48 atom CH 3 NH 3 PbI 3 hybrid perovskite, and comparing the results against experimental measurements and more detailed scattering simulations. The Spearman rank coefficient of mobility against experiment ( r s = 0.93) improves significantly on results obtained using a constant relaxation time approximation ( r s = 0.52). We find our approach offers similar accuracy to state-of-the art methods at approximately 1/500th the computational cost, thus enabling its use in high-throughput computational workflows for the accurate screening of carrier mobilities, lifetimes, and thermoelectric power.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2020

Effect of chemical disorder on the electronic stopping of solid solution alloys

The electronic stopping power of nickel-based equiatomic solid solutions alloys NiCr, NiFe and NiCo for protons and alpha projectiles is investigated in detail using real-time time-dependent density functional theory over a wide range of velocities. Recently developed numerical electronic structure methods are used to probe fundamental aspects of electron-ion coupling non-perturbatively and in a fully atomistic context, capturing the effect of the atomic scale disorder. The effects of particular electronic band structures and density of states reflect in the low velocity limit behavior. We compare our results for the alloys with those of a pure nickel target to understand how alloying affects the electronic stopping. We discover that NiCo and NiFe have similar stopping behavior as Ni while NiCr has an asymptotic stopping power that is more than a factor of two larger than its counterparts for velocities below 0.1 a.u.. Overall, we show that the low-velocity limit of electronic stopping power can be manipulated by controlling the broadening of the d-band through the chemical disorder. In this regime, the Bragg’s additive rule for the stopping of composite materials also fails for NiCr.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1990

Ballistic-hole spectroscopy of interfaces

A new technique allows direct control and measurement of ballistic-hole transport through interfaces. This spectroscopy has been applied to determine the detailed properties of hole transmission through metal-semiconductor interfaces and probe the valence-band structure of subsurface semiconductor heterostructures. The ballistic-hole probe is created by electron-tunneling-microscopy methods and provides high-spatial-resolution capabilities.

Hecht, M. H.↗

NASA NTRS2008

INTEGRAL Long-Term Monitoring of the Supergiant Fast X-Ray Transient XTE J1739-302

Context. In the past few years, a new class of High Mass X-Ray Binaries (HMXRB) has been claimed to exist, the Supergiant Fast X-ray Transients (SFXT). These are X-ray binary systems with a compact companion orbiting a supergiant star which show very short and bright outbursts in a series of activity periods overimposed on longer quiescent periods. Only very recently the first attempts to model the behaviour of these sources have been published, some of them within the framework of accretion from clumpy stellar winds. Aims. Our goal is to analyze the properties of XTE J1739-302/IGR J17391-3021 within the context of the clumpy structure of the supergiant wind. Methods. We have used INTEGRAL and RXTE/PCA observations in order to obtain broad band (1 - 200 keV) spectra and light curves of XTE J1739-302 and investigate its X-ray spectrum and temporal variability. Results. We have found that XTE J1739-302 follows a much more complex behaviour than expected. Far from presenting a regular variability pattern, XTE J1739-302 shows periods of high, intermediate, and low flaring activity.

Blay, P.↗

DOE OSTI2024

Force-Free Identification of Minimum-Energy Pathways and Transition States for Stochastic Electronic Structure Theories

Here, the accurate mapping of potential energy surfaces (PESs) is crucial to our understanding of the numerous physical and chemical processes mediated by atomic rearrangements, such as conformational changes and chemical reactions, and the thermodynamic and kinetic feasibility of these processes. Stochastic electronic structure theories, e.g., Quantum Monte Carlo (QMC) methods, enable highly accurate total energy calculations that in principle can be used to construct the PES. However, their stochastic nature poses a challenge to the computation and use of forces and Hessians, which are typically required in algorithms for minimum-energy pathway (MEP) and transition state (TS) identification, such as the nudged elastic band (NEB) algorithm and its climbing image formulation. Here, we present strategies that utilize the surrogate Hessian line-search method, previously developed for QMC structural optimization, to efficiently identify MEP and TS structures without requiring force calculations at the level of the stochastic electronic structure theory. By modifying the surrogate Hessian algorithm to operate in path-orthogonal subspaces and at saddle points, we show that it is possible to identify MEPs and TSs by using a force-free QMC approach. We demonstrate these strategies via two examples, the inversion of the ammonia (NH 3 ) molecule and the nucleophilic substitution (S N 2) reaction F – + CH 3 F → FCH 3 + F – . We validate our results using Density Functional Theory (DFT)- and Coupled Cluster (CCSD, CCSD(T))-based NEB calculations. We then introduce a hybrid DFT-QMC approach to compute thermodynamic and kinetic quantities, free energy differences, rate constants, and equilibrium constants that incorporates stochastically optimized structures and their energies, and show that this scheme improves upon DFT accuracy. Our methods generalize straightforwardly to other systems and other high-accuracy theories that similarly face challenges computing energy gradients, paving the way for highly accurate PES mapping, transition state determination, and thermodynamic and kinetic calculations at significantly reduced computational expense.

Iyer, Gopal R.↗

NASA NTRS1995

Unoccupied electronic resonances of Sc adsorbed on W(001) by k-resolved inverse photoemission

Scandium adsorbed on the (001) face of tungsten has been studied using Auger-electron spectroscopy, low-energy electron diffraction, k-resolved inverse photoelectron spectroscopy, work-function measurements, and relativistic-electronic-structure calculations. We find that the work function of W(001) does not decrease monotonically as a function of scandium adsorption but reaches a minimum value of Phi = 3.25 eV at 50% coverage. For a complete monolayer, an order 1 X 1 Sc overlayer is formed. Inverse photoemission in the isochromat mode was used to map the unoccupied energy levels of this overlayer along the bar-Gamma(bar-Mu) symmetry direction of the surface Brillouin zone. Local-density-functional calculations using the muffin-tin orbital method were performed for a 1 X 1 Sc overlayer on W and are compared with the experimental two-dimensional band structure.

Lamouri, A.↗

NASA NTRS1994

Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.

Kolnik, Jan↗

NASA NTRS1994

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.

Kolnik, Jan↗

DOE OSTI2020

Magnetotransport and electronic structure of the antiferromagnetic semimetal YbAs

A number of rare-earth monopnictides have topologically nontrivial band structures together with magnetism and strong electronic correlations. In order to examine whether the antiferromagnetic (AFM) semimetal YbAs (TN=0.5 K) exhibits such a scenario, we have grown high-quality single crystals using a flux method, and characterized the magnetic properties and electronic structure using specific heat, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) measurements, together with density functional theory (DFT) calculations. Both ARPES and DFT calculations find no evidence for band inversions in YbAs, indicating a topologically trivial electronic structure. From low-temperature magnetotransport measurements, we map the field-temperature phase diagram, where we find the presence of a field stabilized phase distinct from the AFM phase at low temperatures. Additionally, an extremely large magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpart LuAs is also observed, which can consistently be accounted for by the presence of electron-hole compensation. Moreover, an angle-dependent study of the Shubnikov-de Haas effect oscillations reveals very similar Fermi surfaces between YbAs and LuAs, with light effective masses down to at least 0.5 K, indicating that the Yb-4f electrons are well localized, and do not contribute to the Fermi surface. However, the influence of the localized Yb-4f electrons on the magnetotransport of YbAs can be discerned from the distinct temperature dependence of the XMR compared to that of LuAs, which we attribute to the influence of short-ranged spin correlations that appear well above TN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1997

Doping of Semiconducting Atomic Chains

Due to the rapid progress in atom manipulation technology, atomic chain electronics would not be a dream, where foreign atoms are placed on a substrate to form a chain, and its electronic properties are designed by controlling the lattice constant d. It has been shown theoretically that a Si atomic chain is metallic regardless of d and that a Mg atomic chain is semiconducting or insulating with a band gap modified with d. For electronic applications, it is essential to establish a method to dope a semiconducting chain, which is to control the Fermi energy position without altering the original band structure. If we replace some of the chain atoms with dopant atoms randomly, the electrons will see random potential along the chain and will be localized strongly in space (Anderson localization). However, if we replace periodically, although the electrons can spread over the chain, there will generally appear new bands and band gaps reflecting the new periodicity of dopant atoms. This will change the original band structure significantly. In order to overcome this dilemma, we may place a dopant atom beside the chain at every N lattice periods (N > 1). Because of the periodic arrangement of dopant atoms, we can avoid the unwanted Anderson localization. Moreover, since the dopant atoms do not constitute the chain, the overlap interaction between them is minimized, and the band structure modification can be made smallest. Some tight-binding results will be discussed to demonstrate the present idea.

Toshishige, Yamada↗

NASA NTRS2012

A Parameterized Inversion Model for Soil Moisture and Biomass from Polarimetric Backscattering Coefficients

A semi-empirical algorithm for the retrieval of soil moisture, root mean square (RMS) height and biomass from polarimetric SAR data is explained and analyzed in this paper. The algorithm is a simplification of the distorted Born model. It takes into account the physical scattering phenomenon and has three major components: volume, double-bounce and surface. This simplified model uses the three backscattering coefficients ( sigma HH, sigma HV and sigma vv) at low-frequency (P-band). The inversion process uses the Levenberg-Marquardt non-linear least-squares method to estimate the structural parameters. The estimation process is entirely explained in this paper, from initialization of the unknowns to retrievals. A sensitivity analysis is also done where the initial values in the inversion process are varying randomly. The results show that the inversion process is not really sensitive to initial values and a major part of the retrievals has a root-mean-square error lower than 5% for soil moisture, 24 Mg/ha for biomass and 0.49 cm for roughness, considering a soil moisture of 40%, roughness equal to 3cm and biomass varying from 0 to 500 Mg/ha with a mean of 161 Mg/ha

soil moisture↗

DOE OSTI2023

Band structures and Z 2 invariants of two-dimensional transition metal dichalcogenide monolayers from fully relativistic Dirac-Kohn-Sham theory using Gaussian-type orbitals

Two-dimensional (2D) materials exhibit a wide range of remarkable phenomena, many of which owe their existence to the relativistic spin-orbit coupling (SOC) effects. To understand and predict properties of materials containing heavy elements, such as the transition-metal dichalcogenides (TMDs), relativistic effects must be taken into account in first-principles calculations. We present an all-electron method based on the four-component Dirac Hamiltonian and Gaussian-type orbitals (GTOs) that overcomes complications associated with linear dependencies and ill-conditioned matrices that arise when diffuse functions are included in the basis. Until now, there has been no systematic study of the convergence of GTO basis sets for periodic solids either at the nonrelativistic or the relativistic level. Here, in this study, we provide such a study of relativistic band structures of the 2D TMDs in the hexagonal (2H), tetragonal (1T), and distorted tetragonal (1T') structures, along with a discussion of their SOC-driven properties (Rashba splitting and Z 2 topological invariants). We demonstrate the viability of our approach even when large basis sets with multiple basis functions involving various valence orbitals (denoted triple- and quadruple-ζ) are used in the relativistic regime. Our method does not require the use of pseudopotentials and provides access to all electronic states within the same framework. Our study paves the way for direct studies of material properties, such as the parameters in spin Hamiltonians, that depend heavily on the electron density near atomic nuclei where relativistic and SOC effects are the strongest.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2021

Electronic structure of chromium trihalides beyond density functional theory

In this work, we explore the electronic band structure of freestanding monolayers of chromium trihalides Cr X 3 , X = Cl, Br, I, within an advanced ab initio theoretical approach based on the use of Green's function functionals. We compare the local density approximation with the quasiparticle self-consistent GW (QS GW ) approximation and its self-consistent extension ( QS G W ^ ) by solving the particle-hole ladder Bethe-Salpeter equations to improve the effective interaction W . We show that, at all levels of theory, the valence band consistently changes shape in the sequence Cl → Br → I , and the valence band maximum shifts from the M point to the Γ point. By analyzing the dynamic and momentum-dependent self-energy, we show that QS G W ^ adds to the localization of the systems in comparison with QS GW , thereby leading to a narrower band and reduced amount of halogens in the valence band manifold. Further analysis shows that X = Cl is most strongly correlated, and X = I is least correlated (most bandlike) as the hybridization between Cr d and X p enhances in the direction Cl → Br → I . For CrBr 3 and CrI 3 , we observe remarkable differences between the QS GW and QS G W ^ valence band structures, while their eigenfunctions are very similar. We show that weak perturbations, like moderate strain, weak changes to the d - p hybridization, and adding small U , can flip the valence band structures between these two solutions in these materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Insulating band gaps both below and above the Néel temperature in d -electron LaTi O 3 , LaV O 3 , SrMn O 3 , and LaMn O 3 perovskites as a symmetry-breaking event

Metal d-electron oxides having an odd number of electrons per cell should exhibit band degeneracy at the Fermi energy, making them, in band theory, formally metallic. In many cases, however, these are “false metals”, as evidenced by the observation that many ABO 3 oxide perovskites with a magnetic 3d B-atom are observed to be insulators both below and above the Néel temperature. These inconsistencies between experimental observation and expectation have historically been resolved by invoking degeneracy-breaking physics, based largely on -pure electron effects, such as strong interelectronic correlation for d-electron compounds (the Mott mechanism). Such explanations generally consider microscopic lattice or magnetic degrees of freedom (m-DOF) as largely passive spectators, not a cause of the formally metallic being an insulator. Yet, it has long been known that ABO 3 perovskites can manifest an arrangement of m-DOFs in the form of octahedral tilting, bond dimerization, Jahn-Teller distortions, and ordering of local magnetic moments. It appears reasonable that such structural and magnetic local degrees of freedom need to be allowed to compete with purely electronic strong correlation. To answer this question, we explored a range of d-electron oxide perovskites exemplified by the archetypes LaTiO 3 , LaVO 3 , SrMnO 3 , and LaMnO 3 with 1, 2, 3, or 4 d -electrons, respectively. Using a mean-field-like electronic structure method (here, density functional theory), we find that a combination of magnetic symmetry breaking with structural distortions can account for insulating band gaps in this series while at the same time correctly predicting for the control case an intrinsic paramagnetic metal in SrVO 3 as symmetry-breaking is insufficiently strong to remove the degeneracy. Finally, this indicates that calculating quantitatively local magnetic and positional symmetry-breaking motifs in unit cells that avoid averaging at the outset over the low symmetry motifs can provide consistent trends in a Mott transition without Mott U.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Optically induced changes in the band structure of the Weyl charge-density-wave compound (TaSe 4 ) 2 I

Collective modes are responsible for the emergence of novel quantum phases in topological materials. In the quasi-one dimensional (1D) Weyl semimetal (TaSe 4 ) 2 I , a charge density wave (CDW) opens band gaps at the Weyl points, thus turning the system into an axionic insulator. Melting the CDW would restore the Weyl phase, but 1D fluctuations extend the gapped regime far above the 3D transition temperature (T CDW = 263 K), thus preventing the investigation of this topological phase transition with conventional spectroscopic methods. Here we use a non-equilibrium approach: we perturb the CDW phase by photoexcitation, and we monitor the dynamical evolution of the band structure by time- and angle-resolved photoelectron spectroscopy. We find that, upon optical excitation, electrons populate the linearly dispersing states at the Fermi level (E F ), and fill the CDW gap. The dynamics of both the charge carrier population and the band gap renormalization (BGR) show a fast component with a characteristic time scale of a few hundreds femtoseconds. However, the BGR also exhibits a second slow component on the µs time scale. The combination of an ultrafast response and of persistent changes in the spectral weight at E$_\mathrm{F}$, and the resulting sensitivity of the linearly dispersing states to optical excitations, may explain the high performances of (TaSe 4 ) 2 I as a material for broadband infrared photodetectors.

36 MATERIALS SCIENCE↗

NASA NTRS2012

NASA Tech Briefs, October 2012

Topics discussed include: Detection of Chemical Precursors of Explosives; Detecting Methane From Leaking Pipelines and as Greenhouse Gas in the Atmosphere; Onboard Sensor Data Qualification in Human-Rated Launch Vehicles; Rugged, Portable, Real-Time Optical Gaseous Analyzer for Hydrogen Fluoride; A Probabilistic Mass Estimation Algorithm for a Novel 7-Channel Capacitive Sample Verification Sensor; Low-Power Architecture for an Optical Life Gas Analyzer; Online Cable Tester and Rerouter; A Three-Frequency Feed for Millimeter-Wave Radiometry; Capacitance Probe Resonator for Multichannel Electrometer; Inverted Three-Junction Tandem Thermophotovoltaic Modules; Fabrication of Single Crystal MgO Capsules; Inflatable Hangar for Assembly of Large Structures in Space; Mars Aqueous Processing System; Hybrid Filter Membrane; Design for the Structure and the Mechanics of Moballs; Pressure Dome for High-Pressure Electrolyzer; Cascading Tesla Oscillating Flow Diode for Stirling Engine Gas Bearings; Compact, Low-Force, Low-Noise Linear Actuator; Ultra-Compact Motor Controller; Extreme Ionizing-Radiation-Resistant Bacterium; Wideband Single-Crystal Transducer for Bone Characterization; Fluorescence-Activated Cell Sorting of Live Versus Dead Bacterial Cells and Spores; Nonhazardous Urine Pretreatment Method; Laser-Ranging Transponders for Science Investigations of the Moon and Mars; Ka-Band Waveguide Three-Way Serial Combiner for MMIC Amplifiers; Structural Health Monitoring with Fiber Bragg Grating and Piezo Arrays; Low-Gain Circularly Polarized Antenna with Torus-Shaped Pattern; Stereo and IMU- Assisted Visual Odometry for Small Robots; Global Swath and Gridded Data Tiling; GOES-R: Satellite Insight; Aquarius iPhone Application; Monitoring of International Space Station Telemetry Using Shewhart Control Charts; Theory of a Traveling Wave Feed for a Planar Slot Array Antenna; Time Manager Software for a Flight Processor; Simulation of Oxygen Disintegration and Mixing With Hydrogen or Helium at Supercritical Pressure; A Superfluid Pulse Tube Refrigerator Without Moving Parts for Sub-Kelvin Cooling; Sapphire Viewports for a Venus Probe; The Mobile Chamber; Electric Propulsion Induced Secondary Mass Spectroscopy; and Radiation-Tolerant DC-DC Converters.

Source record↗

DOE OSTI2025

Floquet–Bloch manipulation of the Dirac gap in a topological antiferromagnet

Floquet–Bloch manipulation, achieved by driving a material periodically with a laser pulse, is a method that enables the engineering of electronic and magnetic phases in solids by effectively modifying the structure of their electronic bands. However, the application of Floquet–Bloch manipulation in topological magnetic systems, particularly those with inherent disorder, remains largely unexplored. Here, in this study, we realize Floquet–Bloch manipulation of the Dirac surface-state mass of the topological antiferromagnet MnBi 2 Te 4 . Using time- and angle-resolved photoemission spectroscopy, we show that opposite helicities of mid-infrared circularly polarized light result in substantially different Dirac mass gaps in the antiferromagnetic phase, despite the equilibrium Dirac cone being massless. We explain our findings in terms of a Dirac fermion with a random mass. Our results underscore Floquet–Bloch manipulation as a powerful tool for controlling topology, even in the presence of disorder, and for uncovering properties of materials that may elude conventional probes.

42 ENGINEERING↗