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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Nb 3 Sn Superconducting Cavities by Bronze Routes for Accelerator Stewardship

This project explored the challenges of making Nb 3 Sn superconducting radio-frequency (SRF) cavities by bronze routes. The SRF research community has prioritized Nb 3 Sn for many reasons, including the possibility to operate linacs for stewardship applications in continuous-wave mode with compact cryogenic systems. Existing Nb 3 Sn approaches use a cavity body made of niobium and apply tin to the polished cavity interior, a starting point that contains the main costs of present niobium cavity technology. Further complexity is then added because a high vacuum and temperature >1100 °C must be used to prevent formation of undesirable Nb-Sn phases, de-gas interstitial contaminants, and maintain the high purity of the Nb body. The project sought a more cost-effective solution for the same performance opportunities by exploiting the Cu-Sn-Nb diffusion reactions used to make Nb 3 Sn superconducting wires for magnets, which can be carried out at ~700 °C and are compatible with much cheaper copper cavity bodies. The project also sought understanding of the materials science and factors that affect superconducting properties. The project has impacted SRF cavity technology by demonstrating feasibility of alternative routes that enable compact, high-power electron accelerators for energy, security, environment, medical, and commercial applications.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Copper–Carbon Nanotube Composites Enabled by Electrospinning for Advanced Conductors

The power losses associated with the electrical resistance of copper (Cu) have generated considerable interest in the development of advanced conductors that incorporate carbon nanotubes (CNTs) into the Cu matrix—ultraconductive Cu (UCC) composites—to increase energy efficiency in various industrial and residential applications, ranging from electric power transmission and rotating machinery to electronic devices. To meet this demand, we describe an electrospinning-based polymer nanofiber templating strategy for the fabrication of UCC composites with electrical and mechanical performance exceeding that of Cu. Our approach involves electrospinning of polyvinylpyrrolidone (PVP)-based solutions containing CNTs into aligned PVP/CNT nanofibers onto Cu foil substrates, followed by vacuum-assisted thermal removal of organic solvent/polymer from the CNT matrix to achieve a uniformly distributed CNT layer on the Cu surface. Following additional Cu deposition, the Cu–CNT–Cu composites demonstrated similar electrical conductivity, higher current carrying capacity, and improved mechanical properties compared with those obtained from reference Cu. Importantly, after the heat treatment, Raman analysis of the CNT network displayed an increased metallic character that supports the enhanced electrical properties of the UCC composites. Thus, we believe that these performance characteristics together with the commercial viability of the present approach could open new possibilities in designing advanced conductors for a broad range of electrical systems and industrial applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Microscopic Origin of Polarization Charges at Ga N / ( Al , Ga ) N Interfaces

Ga⁢N/(Al,Ga)⁢N heterojunctions are at the heart of high-electron-mobility transistors that are being adopted for high-power and high-frequency applications. The strong polarization fields present at this interface significantly enhance the density of the two-dimensional electron gas (2DEG) that is confined on the Ga⁢ N side of the junction. The microscopic origin of these electrons has been debated over the years: after excluding that they would be contributed by bulk donors, a model that identifies surface states on the (Al, Ga)⁢N surface as the source of electrons has become widely adopted. Recently, it has become clear, however, that the measured density of surface states is insufficient to account for the high electron density in the 2DEG. Here we demonstrate, based on state-of-the-art first-principles calculations, that the source of electrons is intrinsic to the overall structure and that the negative charge in the 2DEG is balanced by fixed charge on the surface. We perform a rigorous study of polarization, using our recently developed methodology for quantifying polarization fields within the finite-sized systems that can be addressed with density-functional calculations. The results show that the electrons that appear in the 2DEG originate locally at the interface, and that the net charge at the interface is predominantly compensated by fixed charge on the surface, rather than surface states. We elucidate the source of this fixed charge and associate it with surface reconstructions or the presence of heterovalent impurities (such as oxygen). Our results force a reassessment of the impact of surface states on the density of the 2DEG: rather than serving as a supply of electrons, the surface states mainly act to pin the Fermi level. Our conclusions allow a fresh interpretation of experimental observations and allow devising guidelines for optimizing carrier densities in the 2DEG.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons

III-nitride wide bandgap semiconductors have contributed on the grandest scale to many technological advances in lighting, displays, and power electronics. Among III-nitrides, BN has another unique application as a solid-state neutron detector material because the isotope B-10 is among a few elements that have an unusually large interaction cross section with thermal neutrons. A record high thermal neutron detection efficiency of 60% has been achieved by B-10 enriched h-BN detectors of 100 μm in thickness in our group. However, direct detection of fast neutrons with energies above 1 MeV is highly challenging due to the extremely low interaction cross section of fast neutrons with matter. We report the successful attainment of 0.4 mm thick freestanding h-BN 4"-diameter wafers, which enabled the demonstration of h-BN fast neutron detectors capable of delivering a detection efficiency of 2.2% in response to a bare AmBe neutron source. Furthermore, it was shown that the energy information of incoming fast neutrons is retained in the neutron pulse-height spectra. A comparison of characteristics between h-BN fast and thermal neutron detectors is summarized. Neutron detectors are vital diagnostic instruments for nuclear and fusion reactor power and safety monitoring, oil field exploration, neutron imaging and therapy, as well as for plasma and material science research. With the outstanding attributes resulting from its ultrawide bandgap (UWBG), including the ability to operate at extreme conditions of high power, voltage, and temperature, the availability of h-BN UWBG semiconductor detectors with the capability of simultaneously detecting thermal and fast neutrons with high efficiencies is expected to open unprecedented applications that are not possible to attain by any other types of neutron detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Robust silane self-assembled monolayer coatings on plasma-engineered copper surfaces promoting dropwise condensation

Dropwise condensation is well known to result in better heat transfer performance owing to efficient condensate/droplet removal, which can be harnessed in various industrial heat/mass transfer applications such as power generation and conversion, water harvesting/desalination, and electronics thermal management. The key to enhancing condensation via the dropwise mode is thin low surface energy coatings (<100 nm) with low contact angle hysteresis. Ultrathin (<5 nm) silane self-assembled monolayers (or SAMs) have been widely studied to promote dropwise condensation due to their minimal thermal resistance and scalable integration processes. Such thin coatings typically degrade within an hour during condensation of water vapor. After coating failure, water vapor condensation transitions to the inefficient filmwise mode with poor heat transfer performance. We enhance silane SAM quality and durability during water vapor condensation on copper compared to state-of-the-art silane coatings on metal surfaces. We achieve this via (i) surface polishing to sub-10 nm levels, (ii) pure oxygen plasma surface treatment, and (iii) silane coating integration with the copper substrate in an anhydrous/moisture-free environment. The resulting silane SAM has low contact angle hysteresis (≈20°) and promotes efficient dropwise condensation of water for >360 hours without any visible sign of coating failure/degradation in the absence of non-condensable gases. We further demonstrate enhanced heat transfer performance (≈5-7× increase over filmwise condensation) over an extended period of time. Surface characterization data post-condensation leads us to propose that in the absence of non-condensable gases in the vapor environment, the silane SAM degrades due to reduction and subsequent dissolution of copper oxide at the oligomer-substrate interface. The experiments also indicate that the magnitude of surface subcooling (or condensation rate) affects the rate of coating degradation. Finally, this work identifies a pathway to durable dropwise promoter coatings that will enable efficient heat transfer in industrial applications.

42 ENGINEERING↗
DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗
DOE OSTI2023

Development of high-performance long-pulse discharge in KSTAR

High-performance long-pulse plasma operation is essential for producing economically viable fusion energy in tokamak devices. To achieve such discharges in KSTAR, firstly, the rapid increase in the temperature of plasma-facing components was mitigated. The temperature increase of the poloidal limiter, especially, was associated with beam-driven fast ion orbit loss and the discrepancy of the equilibrium reconstructed with heated magnetic probes of signal drift. The fast ions lost to the poloidal limiter were reduced by optimizing the plasma shape and the composition of neutral beam injection (NBI). This nonlinear signal drift was successfully reduced by a new thermal shielding protector on the magnetic probes. Secondly, a lower loop voltage approach was implemented to reduce a poloidal flux consumption rate. A plasma current of 400 kA and a line-averaged electron density of ~2.0 × 10 19 m –3 were chosen by considering the L–H power threshold, fast ion orbit loss, and beam shine-through power loss for low loop voltage in KSTAR. In addition, the application of electron cyclotron heating also helped maintain the plasma with low loop voltage (~25 mV) by enhancing the NBI-driven current and achieving a high poloidal beta (β P ) state. KSTAR has achieved a long pulse (~90 s) operation with the high performance of β P $\leqslant$ 2.7, thermal energy confinement enhancement factor (H 98y2 ) ~ 1.1, and fraction of non-inductive current (f NI ) $\leqslant$ 0.96. Still, gradual degradation of the plasma performance has been observed over time in the discharges. In one of the long-pulse discharges, β P reduced by ~18% over the time of ~8τ R (current relaxation time, τ R ~5 s) and ~1067τ E,th (thermal energy confinement time, τ E,th ~45 ms). The degradation may be closely associated with weak, yet growing, and persistent toroidal Alfvén eigenmodes and their effect on fast ion confinement.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Tuning Fabrication Factors for Reduced Graphene Oxide Forward Osmosis Membranes

Forward osmosis (FO) may serve as a near-zero energy approach for wastewater management and selective chemical enrichment with an appropriate FO membrane. There is a need for novel FO membranes with better physical stability, chemical compatibility, and enhanced reverse flux selectivity. In this work, we have systematically studied a variety of factors for fabricating thermally reduced graphene oxide (RGO) FO filtration membranes and have demonstrated that with a comparable water flux, the RGO membranes have an exceptionally large reverse flux selectivity with 1.5 M sodium sulfate draw solution, about 7 times larger than that of cellulose triacetate membranes under the same testing condition. The interlayer spacing of the membranes can be fine-tuned by varying temperatures, so that the free interlayer spacing is less than 0.7 nm after exposure to water. The RGO-based membranes offer a few advantages with high reverse flux selectivity, mechanical robustness with strong adhesion to nylong support membranes without damage after FO tests and tape peel tests, and enhanced chromate and chlorine resistance. Finally, we have further demonstrated that in the FO processes, one can concentrate waste brine while simultaneously harvesting the osmotic energy as electricity, offering potential applications of forward osmosis-based osmotic batteries for powering electronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Multistate Geometry of Shift Current and Polarization

The quantum metric and Berry curvature capture essential properties of nontrivial Bloch states and underpin many fascinating phenomena. However, it becomes increasingly evident that a more comprehensive understanding of quantum state geometry is necessary to explain properties involving Bloch states of multiple bands, such as optical transitions. To this end, we employ quantum state projectors to develop an explicitly gauge-invariant formalism and demonstrate its power with applications to nonlinear optics and the theory of electronic polarization. We provide a simple expression for the shift current that resolves its precise relation to the moments of electronic polarization, clarifies the treatment of band degeneracies, and reveals its decomposition into the sum of the skewness of the occupied states and intrinsically multistate geometry. The projector approach is applied to calculate nonlinear optical properties of transition metal dichalcogenides (TMDs) layers, using previously calculated minimal tight-binding models, and demonstrated analytically on a three-band generalization of the Rice-Mele chain to elucidate the different contributions. We close with comments on further applications of the projector operator approach to multistate geometry.

electric polarization↗
DOE OSTI2025

Virtual Cable Impedance based Load Sharing in a Microgrid for Parallel Connected Grid Forming Converters

This paper presents a novel approach to power sharing between direct connected grid-forming converters, utilizing virtual cable impedance and droop-based outer loop control. To enhance stability, resistive droop is implemented, while virtual cable impedance with non-zero resistive and inductive components ensures improved power sharing. The inner loop controller employs a Lyapunov energy function to achieve superior dynamic performance. The proposed control architecture is validated through comprehensive modeling and real-time processor-in-the-loop simulations, demonstrating its robustness and efficiency under various operating conditions. The results highlight the potential of this control strategy to improve the reliability and efficiency of renewable energy systems. Additionally, a comparative analysis with traditional methods underscores the advantages of the proposed approach in terms of stability and performance. The proposed control architecture offers a scalable and flexible solution for grid-forming converters, enabling seamless integration of renewable energy sources. Its robustness and adaptability make it an attractive solution for real-world applications. Furthermore, the approach can be extended to other power electronic systems, enhancing overall system performance and efficiency. By providing a reliable and efficient control strategy, this paper contributes to the advancement of renewable energy systems and their adoption in the energy sector. The proposed control strategy has far-reaching implications for the widespread adoption of renewable energy sources, enabling a more sustainable and efficient energy future. The overall system is modeled in MATLAB/Simulink and PLECS software domain.

grid forming converters (GFM)↗
DOE OSTI2020

Investigation of Various Transformer Topologies for HF Isolation Applications

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

α-Quartz Phase Stabilization, Surface Texturing, and Tunable Optical Properties of Nanocrystalline GeO 2 Films Made by Pulsed-Laser Deposition: Implications for Optical and Optoelectronic Applications

Germanium oxide (GeO 2 ) has great potential in multifunctional devices and next-generation power electronics due to its high thermal conductivity and ambipolar doping capability. However, the complexity of synthesizing the desirable polymorph with a controlled phase, surface/interface quality, microstructure, and functional properties is the main barrier to GeO 2 utilization in advanced applications. Here, in this regard, we present a method to realize the hexagonal (h) or a-quartz type GeO 2 with nano-textured surface morphology on sapphire substrates using a hybrid synthesis strategy that comprises pulsed laser deposition (PLD) and post-deposition thermal annealing. We performed a comprehensive study to investigate the effect of annealing temperature, which was varied in a wide range (600-1100 °C), on the crystal structure, phase, surface morphology, chemical stoichiometry, defect states, and optical properties of PLD-grown GeO 2 films. As-deposited GeO 2 films at 500 °C were amorphous. Upon annealing, the GeO 2 films induced an amorphous-to-crystalline phase transformation; GeO 2 films annealed at higher annealing temperatures (≥900 °C) stabilized in the hexagonal phase and demonstrated excellent crystal quality and chemical stability. Thermally activated growth process showed increased average crystallite size, which was varied in the range of 20-130 (±2) nm, while the surface roughness followed a similar trend. The spectral transmittance and band gap also increased with increasing annealing temperature. The resulting h-GeO 2 films, particularly those obtained at annealing temperatures in the 900-1100 °C range, had a higher band gap of 6.2-6.3 eV and displayed excellent optical transmittance in the visible region. Moreover, the absence of extended valence band maxima and reduced optical defect density support the quality improvement upon annealing. When considering phase-pure bulk and nanostructured GeO 2 as a possible candidate for ultra wide band gap semiconductors in cutting-edge technological applications, the results of the current work can be beneficial to realize high structural and optical quality a-quartz structured GeO 2 films.

GeO2↗
DOE OSTI2026

DC Cryogenic Modeling of Open-Source SkyWater 130 nm MOSFETs at 77 K Using BSIM4

Cryogenic applications in high-energy physics (HEP) demand reliable, low-power CMOS electronics capable of operating at liquid nitrogen temperatures (77 K). The open-source SkyWater 130nm (SKY130) CMOS process has previously been shown to operate at temperatures as low as 4 K making it a promising candidate for HEP applications. In this work, we characterize and model SKY130 low-threshold voltage transistors at 77 K, which is a temperature commonly used in modeling applications for liquid argon detectors. DC characteristic measurements were performed at both room temperature and liquid nitrogen temperature. We created a cryogenic modeling approach to produce a SPICE-compatible, isothermal BSIM4-based model for select transistor sizes at 77 K. The resulting model agrees with data at 77 K with an average error on the order of 20% (relative RMS) and shows no dependence on drain voltage. Due to the open-source nature of SKY130, we have made our models publicly available on Github. We hope this work will continue the trend for democratizing circuit design at cryogenic temperatures in high-energy physics by enabling open access to accurate cryogenic CMOS device models at 77 K.

Beall, F. [Texas U., Arlington]↗
DOE OSTI2020

Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions

Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Power over fiber development for HEP detectors

Power-over-Fiber (PoF) technology has been used extensively in settings where high voltages require isolation from ground and electromagnetic isolation is critical. In cryogenic environments, PoF offers a reliable power transmission technology, leveraging optical fibers to transfer power with minimal system degradation. PoF technology excels in maintaining low noise levels and isolation when delivering power to sensitive electronic systems operating in extreme temperature ranges and high voltage environments. Here, in a novel application of PoF for a HEP detector, power is provided to photon detector modules located on a surface at ~300 kV with respect to ground in the planned DUNE experiment. This summary paper of the PoF talk at the 16th PISA Meeting on Advanced Detectors highlights the R&D effort of PoF in extreme conditions and underscores its capacity to revolutionize power delivery and management in critical applications offering a dependable solution with low noise, optimal efficiency, and superior isolation. The DUNE (Abi et al., 2020) experiment will soon deploy large liquid argon (LAr) time projection chambers (TPC) to detect neutrino interactions and other particle physics phenomena. In addition to the particle tracking provided by the TPC, photon detectors, powered by a first ever PoF system, in the cryostat will leverage the high scintillation light yield of LAr to provide crucial timing and additional calorimetric information.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Cyclotron resonance accelerators for industrial applications

Here, this paper describes novel configurations for cyclotron resonance acceleration of electrons and ions that have several attractive features including: a compact robust room-temperature single-cell RF cavity as the accelerator structure; and continuous high current accelerated un-bunched beam output with self-scanning, obviating need for a separate beam scanner. An electron accelerator version, the electron Cyclotron Resonance Accelerator (eCRA), is under development to be an efficient source for high power electron and x-ray beams for medical, research, sterilization, and National Security applications, so as to replace radioactive materials. An ion accelerator version, the ion Cyclotron Auto-Resonance Accelerator (iCARA) is described here, suggesting its potential to produce, as an example, a high-current multi-MeV beam of deuterons which could be highly competitive with that produced either with linacs or cyclotrons. Such a deuteron beam could produce a high flux of fast neutrons via deuteron stripping, for applications including the transmutation of used nuclear fuel, material studies relevant for a fusion reactor inner wall, tritium breeding and medical isotope production. For the high-current, high efficiency simulated performance for eCRA and iCARA as described in this paper, the particle beams produced may not exhibit the low emittance values that are important for most discovery research. Rather, the beams could be useful for industrial applications where higher emittance and some energy spread can be tolerated, in favor of high beam power.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Electron Radiation-Induced Nickel Nanoparticle Formation in KCl-ZnCl 2 Eutectic Molten Salt Using X-ray Absorption Spectroscopy

Understanding the speciation and local structure of metal solutes in molten salts is essential for predicting thermal properties and the redox and corrosion potentials of molten salts for next-generation nuclear reactors and concentrated solar power plant applications. Here, we employ X-ray absorption spectroscopy combined with electron paramagnetic resonance (EPR) measurements to investigate the effects of electron irradiation on 0.1 wt % NiCl 2 dissolved in molten eutectic KCl-ZnCl 2 salt. Radiation-driven reduction of Ni 2+ leading to nucleation and growth of Ni nanoparticles is studied as a function of electron dose (3–15 MGy) and temperature. Quantitative X-ray absorption near edge structure and linear combination fitting are utilized to investigate the extent of reduction as a function of the electron dose and temperature. A multiple-scattering (MS) approach is used for extended X-ray absorption fine structure analysis to deduce the size of the Ni nanoparticles formed and to understand the effect of the dose on the local structure of the nanoparticles. EPR studies on solidified NiCl 2 dissolved in molten eutectic KCl-ZnCl 2 salt show the formation of magnetic Ni nanoparticles.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Machine Learning Chemical Guidelines for Engineering Electronic Structures in Half-Heusler Thermoelectric Materials

Half-Heusler materials are strong candidates for thermoelectric applications due to their high weighted mobilities and power factors, which is known to be correlated to valley degeneracy in the electronic band structure. However, there are over 50 known semiconducting half-Heusler phases, and it is not clear how the chemical composition affects the electronic structure. While all the n-type electronic structures have their conduction band minimum at either the Γ - or X -point, there is more diversity in the p-type electronic structures, and the valence band maximum can be at either the Γ -, L -, or W -point. Here, we use high throughput computation and machine learning to compare the valence bands of known half-Heusler compounds and discover new chemical guidelines for promoting the highly degenerate W -point to the valence band maximum. We do this by constructing an “orbital phase diagram” to cluster the variety of electronic structures expressed by these phases into groups, based on the atomic orbitals that contribute most to their valence bands. Then, with the aid of machine learning, we develop new chemical rules that predict the location of the valence band maximum in each of the phases. These rules can be used to engineer band structures with band convergence and high valley degeneracy.

36 MATERIALS SCIENCE↗