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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Steam-Assisted Ammonolysis of MoO2 as a Synthetic Pathway to Oxygenated δ-MoN

A common route for the synthesis of molybdenum nitrides is through the temperature-programmed reaction of molybdenum oxides with NH3, or ammonolysis. In this work, the role of precursor phase, gas phase chemistry (impact of H2O), and temperature profile on the reaction outcome (700 °C) was examined, which resulted in varying amounts of MoO2, H2MoO5, and the nitride phases—cubic γ (nominally Mo2N) and hexagonal δ (nominally MoN). The phase fraction of the δ phase increased with precursor in the sequence MoO2 > MoO3 > H2MoO5. Steam in the reaction gas also favored the production of δ over γ, but with too much steam, MoO2 was obtained in the product. Synthesis conditions for obtaining nearly phase-pure δ were identified: MoO2 as the precursor, 2% H2O in the gas stream, and a moderate heating rate (3 °C/min). In situ X-ray diffraction provided insights into the reaction pathway. Extensive physico-chemical analysis of the δ phase, including synchrotron X-ray and neutron diffraction, electron microscopy, thermogravimetric analysis, X-ray photoelectron spectroscopy, and prompt gamma activation analysis, revealed its stoichiometry to be MoO0.108(8)N0.892(8)H0.012(5), indicating non-trivial oxygen incorporation. The presence of N/O ordering and an impurity phase Mo5N6 were also revealed, detectable only by neutron diffraction. Notably, a computationally predicted MoON phase (doi: 10.1103/PhysRevLett.123.236402), of interest due to its potential to display a metal-insulator transition, did not appear under any reaction condition examined.

Pandey, Shobhit↗
DOE OSTI2022

Single crystal growth of iridates without platinum impurities

Iridates have attracted much interest in the last decade for their novel magnetism emerging in the limit of strong spin-orbit coupling and possible unconventional superconductivity. A standard for growing iridate single crystals has been the flux method using platinum crucibles. Here, in this work, we show that this widely used method compromises the sample quality by inclusion of platinum impurities. We find that Sr 2 ⁢IrO 4 single crystals grown in iridium crucibles show remarkable differences from those grown in platinum crucibles in their sample characterizations using Raman spectroscopy, resistivity, magnetization, optical third harmonic generation, resonant x-ray diffraction, and resonant inelastic x-ray scattering measurements. In particular, we show that several peaks of sizable intensities disappear in the Raman spectra of samples free of platinum impurities, and a significantly larger activation energy is extracted from the resistivity data compared to previously reported values. Furthermore, we find no evidence of the previously reported glide-symmetry-breaking structural distortions and confirm the I⁢ 4 1 / acd space group of the lattice symmetry. Although the platinum impurities are not apparent in the magnetic properties and thus went unnoticed in the stoichiometric insulating phase for a long time, their effects can be much more detrimental to transport properties in chemically doped compounds. Therefore, our result suggests using growth methods that avoid platinum impurities for an investigation of the intrinsic physical properties of iridates, and possible superconducting phases.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SIR Glass Test Vehicle Designed to Characterize Process Materials

The exposure to harsh environments can result in reliability issues on highly dense electronic packages and circuit assemblies. One area of concern is electrochemical failure mechanisms caused by electrolytic corrosion, electrochemical migration (dendrites), and leakage currents under humid conditions. These no-fault and no-trouble found failure points are challenging to detect and to perform process control during the assembly process. The focus of this research centers on metallizing glass surface insulation resistance test vehicles to characterize materials on electronic packages and components that exhibit the highest risk of failure due to material interactions and process residues. Glass test vehicles provide a visual representation of materials when they are exposed to moisture content in the air. Harsh environments can cause material interactions resulting in morphology changes, opening, and release of active components. A transparent test vehicle is highly functional for environmental stress testing under temperature, humidity, and bias. The designed experiment will evaluate the effects of material and process residues that can undergo changes in behavior during application, which leads to local failures.

Capen, Bill↗
DOE OSTI2025

Applications of Nickelate perovskites for neuromorphic computing from electronic structure and Machine Learning

While the limit of Moore's law is presently being reached with current microelectronic technologies, we need to develop new paradigms that overcome this limitation. In that respect, neuromorphic computing is a concept that emulates the neural behavior and response of the human brain, and it has been recognized as a promising alternative approach. In this research project, we will perform multi-fidelity scale bridging to explore the potential use of materials with metal to insulator transition for neuromorphic applications. In particular, rare earth nickelates are promising for such purposes, as the transition in these materials is quite sensitive to a broad set of different external stimuli. Our multi-fidelity approach will bridge the high-fidelity electronic structure calculations with classical potentials. We will bridge dynamical mean field theory with a classical atomistic representation via a deep learning force field. The neural network is trained with energies, charges, and forces obtained by accurate electronic structure theories based on Dynamical Mean Field Theory. The configurational space is generated from known crystal phases, ab initio molecular dynamics with exchange-correlation functionals corrected with the Hubbard model, disordered phases with different concentrations of oxygen vacancies, and nonsymmetrical positions and induced strain by grain interfaces or contact with a substrate. Strategies to train the model with a reduced number of training examples are obtained from active learning methods, and new structures for improving the learning process are generated by using machine learning autoencoders. This classical potential will be validated through a diversity of electronic structure methods and represents an important step to combine the flexibility and accuracy of first-principles with the speed of classical potentials. The generated multi-fidelity surrogate model will be used to understand the role of strain, oxygen vacancies, proton doping, the variation of the crystal phase, substrate effects, vibrational effects as the octahedral rotation, grain boundaries and defect effects on the response of a Metal to Insulator Transition (MIT) in correlated materials. Long time and large-scale simulations will help understand the role of different stimuli to control the hysteresis of the MIT, as it has been experimentally suggested. Selected configurations will be analyzed with higher-level theories to provide an accurate electronic description and to study how the orbitals and charges are rearranged under different conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Temperature-dependent optical constants of vanadium dioxide thin films deposited on polar dielectrics

Coating polar dielectrics with thin film vanadium dioxide (VO 2 ) enables one to exploit the temperature-dependent phase transition within VO 2 to actively tune and modulate surface phonon polaritons at mid-infrared. However, controlling the behavior of such systems requires intimate knowledge of the temperature-dependent optical constants of VO 2 , which depend greatly on the growth conditions and substrate material. Here, in this work, we accurately determine the complex optical constants of VO 2 on polar dielectrics across the insulator-to-metal phase transition (IMT) using only normal incident reflectance spectra by analyzing the reflectance with Kramers–Kronig relations and thin film Fresnel equations. This non-ellipsometry technique offers an advantage in determining the refractive index using a standard infrared spectrometer.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Advances in Quantum Defect Embedding Theory

Quantum defect embedding theory (QDET) is a many-body embedding method designed to describe condensed systems with strongly correlated electrons localized within a given region of space, for example spin defects in semiconductors and insulators. Although the QDET approach has been successful in predicting the electronic properties of several point defects, several limitations of the method remain. Here, in this work, we propose multiple advances to the QDET formalism. We derive a doublecounting correction that consistently treats the frequency dependence of the screened Coulomb interaction, and we illustrate the effect of including unoccupied orbitals in the active space. In addition, we propose a method to describe hybridization effects between the active space and the environment, and we compare the results of several impurity solvers, providing further insights into improving the reliability and applicability of the method. We present results for defects in diamond and for molecular qubits, including a detailed comparison with experiments.

Chen, Siyuan [University of Chicago, IL (United St↗
DOE OSTI2024

1 kV 150 A Bidirectional Isolated DC/DC Converter With Full Range ZVS For Charger Application

This paper focusses on the development of a bidirectional DC/DC converter based on dual active bridge (DAB) converter for 1 kV class fast charger applications. A novel modulation technique is proposed to achieve zero voltage switching across the entire operating range of a vehicle battery system. The topology includes a tap changer to support multiple class of vehicles. The full range ZVS operation will allow high efficiency operation even at light load, reduced dv/dt to improve transformer insulation lifetime and mitigate EMI impact. A 1 kV class, 150 A prototype was developed to validate the proposed concepts.

Kandula, Prasad↗
DOE OSTI2022

High Temperature Thick Film Sensor Development Based on Refractory Oxide Semiconductors

Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.

20 FOSSIL-FUELED POWER PLANTS↗
DOE OSTI2021

Pressure-induced order–disorder transitions in β-In 2 S 3 : an experimental and theoretical study of structural and vibrational properties

We report this joint experimental and theoretical study of the structural and vibrational properties of β-In 2 S 3 upon compression shows that this tetragonal defect spinel undergoes two reversible pressure-induced order–disorder transitions up to 20 GPa. We propose that the first high-pressure phase above 5.0 GPa has the cubic defect spinel structure of α-In 2 S 3 and the second high-pressure phase ($\phi$-In 2 S 3 ) above 10.5 GPa has a defect α-NaFeO 2 -type (R$\bar{3}$) structure. This phase, related to the NaCl structure, has not been previously observed in spinels under compression and is related to both the tetradymite structure of topological insulators and to the defect LiTiO 2 phase observed at high pressure in other thiospinels. Structural characterization of the three phases shows that α-In 2 S 3 is softer than β-In 2 S 3 while $\phi$-In 2 S 3 is harder than β-In 2 S 3 . Vibrational characterization of the three phases is also provided, and their Raman-active modes are tentatively assigned. Our work shows that the metastable α phase of In 2 S 3 can be accessed not only by high temperature or varying composition, but also by high pressure. On top of that, the pressure-induced β–α–$\phi$ sequence of phase transitions evidences that β-In 2 S 3 , a B III 2 X V 3 compound with an intriguing structure typical of A II B III 2 X VI 4 compounds (intermediate between thiospinels and ordered-vacancy compounds) undergoes: (i) a first phase transition at ambient pressure to a disordered spinel-type structure (α-In 2 S 3 ), isostructural with those found at high pressure and high temperature in other B III 2 X V 3 compounds; and (ii) a second phase transition to the defect α-NaFeO 2 -type structure ($\phi$-In 2 S 3 ), a distorted NaCl-type structure that is related to the defect NaCl phase found at high pressure in A II B III 2 X VI 4 ordered-vacancy compounds and to the defect LiTiO 2 -type phase found at high pressure in A II B III 2 X VI 4 thiospinels. This result shows that In 2 S 3 (with its intrinsic vacancies) has a similar pressure behaviour to thiospinels and ordered-vacancy compounds of the A II B III 2 X VI 4 family, making β-In 2 S 3 the union link between such families of compounds and showing that group-13 thiospinels have more in common with ordered-vacancy compounds than with oxospinels and thiospinels with transition metals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Properties of La 0.7 Ca 0.3 MnO 3 under extreme tensile strain

The complex phase diagram of manganites with simultaneously active spin, charge, orbital, and lattice degrees of freedom continues providing surprises. In a recent groundbreaking experiment, membranes of the perovskite manganite La 0.7 Ca 0.3 MnO 3 (LCMO) deposited on a flexible polymer layer were strained up to 8% [S. S. Hong et al., Science 368, 71 (2020)], much more than achieved by regular strain induced by a rigid substrate. By increasing this strain, a metal-insulator transition was reported. Here we reproduce the results of the experiments using Monte Carlo simulations of the two-orbital double-exchange model including Jahn-Teller distortions at hole density x=1/3. The full phase diagram with varying temperature and Jahn-Teller coupling λ is presented. When the bandwidth W of mobile electrons is reduced, thus when the effective Jahn-Teller coupling λ/W is increased, a metal-insulator transition is found in our simulations, between a ferromagnetic metallic state with uniform charge distribution and an insulator with diagonal charge stripes that retains its ferromagnetic character. In between the hole-rich diagonals, staggered orbital order occurs. We also report resistivity and magnetization measurements alongside with spin correlations and charge structure factors. Our overall conclusions are in agreement with the recent experimental and density functional theory results by Hong et al., and we confirm much earlier ground state predictions of striped ferromagnetic order using energy optimization techniques by T. Hotta et al. [Phys. Rev. Lett. 86, 4922 (2001)]. The experimental observation of one of the states predicted by theory suggests that diagonal stripes could be achieved at other hole densities as well, such as x=1/4, if LCMO membranes with that hole doping were subject to similar strains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Absence of mixed valency for Pr in pristine and hole-doped PrNiO 2

Infinite-layer nickelates (𝑅⁢NiO 2 ) exhibit some distinct differences as compared to cuprate superconductors, leading to a debate concerning the role of rare-earth ions (𝑅=La,Pr,Nd) in the low-energy many-body physics. Although rare-earth 4⁢𝑓 orbitals are typically treated as inert “core” electrons in studies, this approximation has been questioned. An active participation of 4⁢𝑓 states is most likely for PrNiO 2 based on an analogy to cuprates where Pr cuprates differ significantly from other cuprates. Here, we adopt density functional plus dynamical mean-field theory to investigate the role of Pr 4⁢𝑓 orbitals and more generally the correlated electronic structure of PrNiO 2 and its hole-doped variant. We find that the Pr 4⁢𝑓 states are insulating and show no evidence for either a Kondo resonance or Zhang-Rice singlet formation as they do not have any hybridization channels near the Fermi energy. The biggest effects of hole doping are to shift the Pr 5⁢𝑑 and 4⁢𝑓 states further away from the Fermi energy whereas enhancing the Ni 3⁢𝑑−O 2⁢𝑝 hybridization, thus, reducing correlation effects as the O 2⁢𝑝 states get closer to the Fermi energy. We again find no evidence for either Kondo or Zhang-Rice physics for the 4⁢𝑓 states upon hole doping. Finally, we conclude by commenting on implications for other reduced valence nickelates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Process Control Plan to Monitor Acceptable Levels of Flux and other residues

IPC J-STD –001G, Amendment 1 requires that the assembler have a sampling plan to assure that the process remains in control once qualified and validated. It is well documented that electrochemical failures occur at component sites where flux residues are not fully activated. It is also well known that specific components have a higher risk of electrochemical failure. Selecting a control plan that monitors the process and its performance on challenging components provides assurance that the process maintains control once established during process qualification. The test board used to qualify the process establishes an upper and lower spec limit for each of the component types on the test board. Surface Insulation Resistance upper and lower control limits, using challenging components that are representative of production hardware, represent a golden process condition. The golden image is a measure of process deviations that represents the performance of a resistance curve within a specific period. The objective is to judge whether the process in or out of control.

42 ENGINEERING↗
DOE OSTI2020

Redox cycling-based detection of phenazine metabolites secreted from Pseudomonas aeruginosa in nanopore electrode arrays

The opportunistic pathogen Pseudomonas aeruginosa (P. aeruginosa) produces several redox-active phenazine metabolites, including pyocyanin (PYO) and phenazine-1-carboxamide (PCN), which are electron carrier molecules that also aid in virulence. In particular, PYO is an exclusive metabolite produced by P. aeruginosa, which acts as a virulence factor in hospital-acquired infections and is therefore a good biomarker for identifying early stage colonization by this pathogen. Here, we describe the use of nanopore electrode arrays (NEAs) exhibiting metal–insulator–metal ring electrode architectures for enhanced detection of these phenazine metabolites. The size of the nanopores allows phenazine metabolites to freely diffuse into the interior and access the working electrodes, while the bacteria are excluded. Consequently, highly efficient redox cycling reactions in the NEAs can be accessed by free diffusion unhindered by the presence of bacteria. This strategy yields low limits of detection, i.e. 10.5 and 20.7 nM for PYO and PCN, respectively, values far below single molecule pore occupancy, e.g. at 10.5 nM < n pore > ~ 0.082 per nanopore – a limit which reflects the extraordinary signal amplification in the NEAs. Furthermore, experiments that compared results from minimal medium and rich medium show that P. aeruginosa produces the same types of phenazine metabolites even though growth rates and phenazine production patterns differ in these two media. Here, the NEA measurement strategy developed here should be useful as a diagnostic for pathogens generally and for understanding metabolism in clinically important microbial communities.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Flat Bands and Chiral Optical Response of Moiré Insulators

Here, we present a low-energy model describing the reconstruction of the electronic spectrum in twisted bilayers of honeycomb crystals with broken sublattice symmetry. The resulting moiré patterns are classified into two families with different symmetry. In both cases, flat bands appear at relatively large angles without any magic-angle condition. Transitions between them give rise to sharp resonances in the optical absorption spectrum at frequencies well below the gap of the monolayer. Owing to their chiral symmetry, twisted bilayers display circular dichroism, that is, different absorption of left and right circularly polarized light. This optical activity is a nonlocal property determined by the stacking. In hexagonal boron nitride, sensitivity to the stacking leads to strikingly different circular dichroism in the two types of moirés. Our calculations exemplify how subtle properties of the electronic wave functions, encoded in current correlations between the layers, control physical observables of moiré materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Hall-coefficient diagnostics of the surface state in pressurized SmB 6

In this study, we report results of the high-pressure Hall coefficient (R H ) measurements in the putative topological Kondo insulator SmB 6 up to 37 GPa. Below 10 GPa, our data reveal that R H (T) exhibits a prominent peak upon cooling below 20 K. Remarkably, the temperature at which surface conduction dominates coincides with the temperature of the peak in R H (T). The temperature dependent resistance and Hall coefficient can be well fitted by a two-channel model with contributions from the metallic surface and the thermally activated bulk states. When the bulk of SmB 6 becomes metallic and magnetic at ~10 GPa, both the R H (T) peak and the resistance plateau disappear simultaneously. Here, our results indicate that the R H (T) peak is a fingerprint to diagnose the presence of a metallic surface state in SmB 6 . The high-pressure magnetic state of SmB 6 is robust to 180 GPa, and no evidence of superconductivity is observed in the metallic phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Two-Dimensional Moiré Polaronic Electron Crystals

Two-dimensional moiré materials have emerged as the most versatile platform for realizing quantum phases of electrons. Here, we explore the stability origins of correlated states in WSe 2 /WS 2 moiré superlattices. We find that ultrafast electronic excitation leads to partial melting of the Mott states on timescales 5 times longer than predictions from the charge hopping integrals and that the melting rates are thermally activated, with activation energies of 1⁢8±3 and 1⁢3±2 meV for the one- and two-hole Mott states, respectively, suggesting significant electron-phonon coupling. A density functional theory calculation of the one-hole Mott state confirms polaron formation and yields a hole-polaron binding energy of 16 meV. These findings reveal a close interplay of electron-electron and electron-phonon interactions in stabilizing the polaronic Mott insulators at transition metal dichalcogenide moiré interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Electrodynamics of Thin Sheets of Twisted Material

We construct a minimal theory describing the optical activity of a thin sheet of a twisted material, the simplest example of which is twisted bilayer graphene. We introduce the notion of "twisted electrical conductivity", which parametrizes the parity-odd response of a thin film to a perpendicularly falling electromagnetic waves with wavelength larger than the thickness of the sheet. Here, we show that the low-frequency Faraday rotation angle has different behaviors in different phases. For an insulator, the Faraday angle behaves as ω 2 at low frequencies, with the coefficient being determined by the linear relationship between a component of the electric quadrupole moment and the external electric field. For superconductors, the Faraday rotation angle is constant when the frequency of the incoming EM waves is below the superconducting gap and is determined by the coefficient of the Lifshitz invariant in the Ginzburg-Landau functional describing the superconducting state. In the metallic state, we show that the twisted conductivity is proportional to the "magnetic helicity" (scalar product of the velocity and the magnetic moment) of the quasiparticle, averaged around the Fermi surface. The theory is general and is applicable to strongly correlated phases.

Son, Dam Thanh↗
DOE OSTI2024

Power Layout Design of a GaN HEMTs-Based High-Power High-Efficiency Three-Level ANPC Inverter for 800 V DC Bus System

Multiple commutation paths exist for switching devices in a three-level active neutral point clamped (3L-ANPC) inverter operation based on the selected switching state and current direction. In addition, the capacitive coupling path of the nonswitching device is a key design aspect for enabling high voltage and high current operation of gallium nitride (GaN) switches in 3L-ANPC topology. A comprehensive study of the switching transient events of inner, outer, and clamping devices of 3L-ANPC is presented in this article. The commutation mechanisms for worst-case transient voltage overshoots (TVOs) are identified. A simplified equivalent circuit model is presented to determine the design criteria for the power layout structure's parasitic inductances. A power layout strategy satisfying the design criteria is then proposed using an insulated metal substrate power printed circuit board (PCB) to enable efficient high-power operation. The proposed design minimizes the commutation and capacitive coupling path inductances to 6 nH and 11.5 nH, respectively. This enables the fast switching operation of GaN HEMTs at 800 V dc, 36 A with a low TVO of 31% verified through experimental three-level double pulse test results. Experimental evaluation of a three-phase 3L-ANPC hardware prototype based on the proposed power layout shows 99% efficiency at 800 V, 9.5 kVA and 50 kHz switching frequency. The proposed design achieves a low case-to-ambient thermal resistance of 2.3 °C/W.

42 ENGINEERING↗