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DOE OSTI2024

Wide Bandgap Generation (WBGen): Developing the Future Wide Bandgap Power Electronics Engineering Workforce

This Final Technical Report (FTR) summarizes the work conducted at the Center for Power Electronics Systems (CPES) under the Wide-Bandgap Generation (WBGen) fellowship and traineeship program established by the Advanced Manufacturing and Technologies Office (AMMTO) of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy (EERE) at Virginia Tech, which had as main objective to train the next generation of U.S. citizen power engineers with wide-bandgap (WBG) power semiconductor expertise, with the intent to aid in fulfilling the future workforce needs in this field. The latter was deemed of strategic importance given the fast-paced growth observed—and predicted—in the demand of this technical expertise, whose practitioners have become the enablers and executioners of the electrification transformation process that not just the U.S., but the whole world, is currently undergoing as it seeks for more effective and efficient ways to use energy. As such, the WBGen program set forth to achieve its educational goals, which in addition sought to broaden the range of WBG-based power electronics by conducting research and development on high-efficiency grid apparatus and high-efficiency electrical power systems, and to also enhance the power engineering curriculum by formalizing WBG-oriented design procedures replacing existent yet now obsolete design procedures developed for Silicon (Si) based power electronics. This effort led CPES to spearhead the development of a new major within The Bradley Electrical and Computer Engineering (ECE) Department at Virginia Tech, namely Electronic Power and Energy Systems (EPES), which coalesced power electronics and power systems courses to provide undergraduate students with a strong formation in the power engineering field, while creating a pipeline of graduate students that could pursue the WBG-based curriculum and conduct research at CPES. In all, in what is considered a true success, eight of the twenty WBGen fellows that graduated program were recruited from the ECE department undergraduate cohort. The traineeship emphasized as well, from its beginning, the partnership with industry and national laboratories, which took advantage of the successful industry consortium at CPES that has historically been formed by 80–90 power and energy companies working in close collaboration with the center. This gave WBGen fellows the accessibility and possibility to conduct internships at partner facilities during the summer months, focused solely on the evaluation, testing, and adoption of WBG devices, which were many times tightly related to their respective research work and plans. In addition, WBGen fellows conducted their main research work within the confines of research programs at CPES conducted with these industry partners, providing them with a unique opportunity to develop not just their technical expertise—while advancing their knowledge, but to also learn and practice a slew of skills needed for their professional growth. As such, the fellows tackled a variety of WBG-related research topics, from device reliability and capability aspects as well as packaging and integration, encompassing the use of advanced materials and new structures, current sharing challenges, and insulation systems, to advanced gate-drivers with integrated sensors and protection mechanisms and active current- and voltage-based control, to optimized layouts seeking to maximize the switching and power processing performance of these devices, to power processing solutions adopting Gallium-Nitride (GaN) and Silicon-Carbide (SiC) power semiconductors for a variety of applications; including radiation-hardened converters for space dc distribution systems, direct three-phase ac-to-ac power converters for aerospace systems, dc-ac inverters for automotive traction drives, high-frequency isolated dc-dc battery chargers also for heavy transportation systems, and medium-voltage dc-dc and dc-ac converters for distribution systems and future power grids. The WBGen program ultimately graduated a total of 20 power engineers, all experts on WBG-based power electronics, awarding 18 M.S. and 2 PhD degrees in the process. These fellows, all U.S. citizens, allowed CPES to increase the number of citizens students to 33 % at the peak of the program, as the traineeship made possible the recruitment of talent with more attractive graduate research assistantship (GRA) contracts. Unfortunately, the present U.S. citizen enrollment at CPES has declined back to historic levels—approximately 10 %, as the regular GRA rates are not competitive enough when compared with entry-level industry jobs. In all, WBGen fellows published a total of 7 peer-reviewed journal articles, 44 papers at international technical conferences, made 42 presentations at international technical conferences, and filed 4 invention disclosures and patent applications, which have since then been granted by the U.S. Patent and Trademark Office (USPTO). Their contribution to CPES, Virginia Tech, the United States, and the world, has been significant, and continues to yield results thanks to the exemplary career that the fellows have initiated at many of the partners of the program, which include Wolfspeed, Raytheon Technologies, Infineon, Lockheed Martin, Dominion Energy, Northrop Grumman, Rivian, Aerospace Corporation, Sandia National Laboratory, National Renewable Energy Laboratory, John Hopkins University, and Virginia Tech.

14 SOLAR ENERGY↗

NASA NTRS1972

Dielectric breakdown in a dilute plasma.

Description of tests performed to determine the effects of high voltages on dielectrics that are to insulate solar cell arrays operating at voltages up to 16 kV from the electrically active plasma of the space environment at 500 km altitude. The tests were performed on dielectrics considered for this application at positive bias voltages as high as 20 kV dc relative to ground in an argon plasma with electron number densities of approximately one million per cu cm. Teflon specimens displayed higher breakdown voltages than all other dielectrics tested.

Mckinzie, D. J., Jr.↗

NASA NTRS1992

Elemental analyses of hypervelocity micro-particle impact sites on interplanetary dust experiment sensor surfaces

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity micro-particles that struck the active sensors with enough energy to breakdown the 0.4 to 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. These discharge features, which include 50 micron diameter areas where the aluminum top layer has been vaporized, facilitate the location of the impacts. The high purity Al-SiO2-Si substrates allow detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) is used to create two-dimensional elemental ion intensity maps of micro-particle impact sites on the IDE sensors. The element intensities in the central craters of the impacts are corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results are used to classify the particles' origins as 'manmade', 'natural' or 'indeterminate'. The last classification results from the presence of too little impactor residue (a frequent occurrence on leading edge impacts), analytical interference from high background contamination, the lack of information on silicon residue, the limited usefulness of data on aluminum in the central craters, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. A total of 35 impacts on leading edge sensors and 22 impacts on trailing edge sensors were analyzed.

Simon, Charles G.↗

NASA NTRS1992

Elemental Analyses of Hypervelocity Microparticle Impact Sites on Interplanetary Dust Experiment Sensor Surfaces

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity microparticles (approximately 0.2 to approximately 100 micron diameter) that struck the active sensors with enough energy to breakdown the 0.4 or 1.0 micron thick SiO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. The high purity Al-SiO2-Si substrates allowed detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) was used to create two-dimensional elemental ion intensity maps of microparticle sites on the IDE sensors. The element intensities in the central craters of the impacts were corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results classification resulted from the particles' origins as 'manmade', 'natural', or 'indeterminate'. The last classification resulted from the presence of too little impactor residue, analytical interference from high background contamination, the lack of information on silicon and aluminum residues, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters, of these features. Thus far, a total of 79 randomly selected microparticle impact sites from the six primary sides of the LDEF were analyzed: 36 from tray C-9 (Leading (ram), or east, side), 18 from tray C-3 (Trailing (wake), or west, side), 12 from tray B-12 (north side), 4 from tray D-6 (south side), 3 from tray H-11 (space end), and 6 from tray G-10 (earth end). Residue from manmade debris was identified in craters on all trays (aluminum oxide particle residues were not detectable on the Al/Si substrates). These results were consistent with the IDE impact record which showed highly variable long term microparticle impact flux rates on the west, space, and Earth sides of the LDEF which could not be ascribed to astronomical variability of micrometeorite density. The IDE record also showed episodic bursts of microparticle impacts on the east, north, and south sides of the satellite, denoting passage through orbital debris clouds or rings.

Simon, C. G.↗

NASA NTRS1994

Evaluation of the prototype dual-axis wall attitude measurement sensor

A prototype dual-axis electrolytic tilt sensor package for angular position measurements was built and evaluated in a laboratory environment. The objective was to investigate the use of this package for making wind tunnel wall attitude measurements for the National Transonic Facility (NTF) at NASA Langley Research Center (LaRC). The instrumentation may replace an existing, more costly, and less rugged servo accelerometer package (angle-of-attack package) currently in use. The dual-axis electrolytic tilt sensor package contains two commercial electrolytic tilt sensors thermally insulated with NTF foam, all housed within a stainless steel package. The package is actively heated and maintained at 160 F using foil heating elements. The laboratory evaluation consisted of a series of tests to characterize the linearity, repeatability, cross-axis interaction, lead wire effect, step response, thermal time constant, and rectification errors. Tests revealed that the total RMS errors for the x-axis sensor is 0.084 degree, and 0.182 degree for the y-axis sensor. The RMS errors are greater than the 0.01 degree specification required for NTF wall attitude measurements. It is therefore not a viable replacement for the angle-of-attack package in the NTF application. However, with some physical modifications, it can be used as an inexpensive 5-degree range dual-axis inclinometer with overall accuracy approaching 0.01 degree under less harsh environments. Also, the data obtained from the tests can be valuable for wind tunnel applications of most types of electrolytic tilt sensors.

Wong, Douglas T.↗

NASA NTRS2003

A Compact, Continuous Adiabatic Demagnetization Refrigerator with High Heat Sink Temperature

In the continuous adiabatic demagnetization refrigerator (ADR), the existence of a constant temperature stage attached to the load breaks the link between the requirements of the load (usually a detector array) and the operation of the ADR. This allows the ADR to be cycled much faster, which yields more than an order of magnitude improvement in cooling power density over single-shot ADRs. Recent effort has focused on developing compact, efficient higher temperature stages. An important part of this work has been the development of passive gas-gap heat switches that transition (from conductive to insulating) at temperatures around 1 K and 4 K without the use of an actively heated getter. We have found that by carefully adjusting available surface area and the number of He-3 monolayers, gas-gap switches can be made to operate passively. Passive operation greatly reduces switching time and eliminates an important parasitic heat load. The current four stage ADR provides 6 micro W of cooling at 50 mK (21 micro W at 100 mK) and weighs less than 8 kg. It operates from a 4.2 K heat sink, which can be provided by an unpumped He bath or many commercially available mechanical cryocoolers. Reduction in critical current with temperature in our fourth stage NbTi magnet presently limits the maximum temperature of our system to approx. 5 K. We are developing compact, low-current Nb3Sn magnets that will raise the maximum heat sink temperature to over 10 K.

Shirron, P. J.↗

NASA NTRS2009

SOI CMOS Imager with Suppression of Cross-Talk

A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

Pain, Bedabrata↗

DOE OSTI2026

Electronic correlations and topology in Kondo insulator PuB 6

Utilizing a combination of dynamical mean field theory (DMFT) and density functional theory, it has been theoretically proposed that PuB 6 is a strongly correlated topological insulator characterized by nontrivial 𝐙 2 topological invariants and metallic surface states [X. Deng et al., Phys. Rev. Lett. 111, 176404 (2013)]. Here, we demonstrate through low-temperature magnetotransport measurements and first-principles calculations that PuB 6 exhibits characteristics of a topological Kondo insulating state. These features include a transition in electrical resistivity from high-temperature, thermally activated behavior with a narrow gap at the Fermi level (Δ⁢𝜌 ∼ 20 meV) to a distinctive low-temperature plateau, as well as a surface-to-volume dependence of electrical resistivity at low temperatures. The topological nature of PuB 6 is further supported by the theoretical calculations, which show that GGA + 𝑈 is capable of capturing electronic, topological, and lattice properties of PuB 6 with much lower computational cost than DMFT.

36 - MATERIALS SCIENCE↗

DOE OSTI2023

VO 2 phase change electrodes in Li-ion batteries

Use of electrode materials that show phase change behavior and hence drastic changes in electrochemical activity during operation has not been explored for Li-ion batteries. Here we demonstrate the vanadium oxide (VO 2 ) cathode that undergoes a metal–insulator transition due to the first-order structural phase transition at an accessible temperature of 68 °C for battery operation. Using a suitable electrolyte operable across the phase transition range and compatible with vanadium oxide cathodes, we studied the effect of cathode active material structural changes on lithium insertion followed by the electrochemical characteristics above and below the phase transition temperature. The high-temperature VO 2 phase shows significantly improved capacitance, enhanced current rate capabilities, improved electrical conductivity and lithium-ion diffusivity compared to the insulating low temperature phase. In conclusion, this opens up new avenues for electrode design, allowing manipulation of electrochemical reactions around phase transition temperatures, and in particular enhancing electrochemical properties at elevated temperatures contrary to the existing class of battery chemistries that lead to performance deterioration at elevated temperatures.

25 ENERGY STORAGE↗

DOE OSTI2021

Emerging nonlinear Hall effect in Kane-Mele two-dimensional topological insulators

We report the recent observations of nonlinear Hall effect in time-reversal symmetry protected systems and on the surface of three-dimensional topological insulators due to an in-plane magnetic field have attracted immense experimental and theoretical investigations in two-dimensional transition metal dichalcogenides and Weyl semimetals. The origin of this type of second order effect has been attributed to the emergence of a Berry curvature dipole, which requires a low-symmetry environment. Here, we propose a mechanism for generating such a second order nonlinear Hall effect in Kane-Mele two-dimensional topological insulators due to spatial and time reversal symmetry breaking in the presence of Zeeman and Rashba couplings. By actively tuning the energy gaps with external electromagnetic fields we also demonstrate that the nonlinear Hall effect shows remarkable signatures of topological phase transitions existing in the considered two-dimensional systems.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Probing Heterogeneous Charge Distributions at the α-Al 2 O 3 (0001)/H 2 O Interface

Unlike metal or semiconductor electrodes, the surface charge resulting from the protonation or deprotonation of insulating mineral oxides is highly localized and heterogeneous in nature. In this work the Stark active C≡N stretch of potassium thiocyanate is used as a molecular probe of the heterogeneity of the interfacial electrostatic potential at the α-Al 2 O 3 (0001)/H 2 O interface. Vibrational sum frequency generation (vSFG) measurements performed in the OH stretching region suggest that thiocyanate species organize interfacial water similarly to halide ions. Changes in the electrostatic potential are then tracked via Stark shifts of the vibrational frequency of the thiocyanate stretch. Our vSFG measurements show that we can simultaneously measure the vSFG response of SCN – ions experiencing charged and neutral surface sites. We assign local potentials of +308 and -154 mV to positively and negatively charged aluminol groups that are present at pH = 4 and pH = 10, respectively. Thiocyanate anions at positively charged surface sites and negatively charged surface sites and those participating in contact ion pairing adopt similar orientations and are oppositely oriented relative to thiocyanate ions near neutral surface sites. All four species followed Langmuir adsorption isotherms. Density functional theory–molecular dynamics (DFT-MD) simulations of SCN – near the neutral α-Al 2 O 3 (0001)/H 2 O interface show that the vSFG response in the C≡N stretch region originates from a SCN–H–O–Al complex, suggesting the surface site specificity of these experiments. To our knowledge this is the first spectroscopic measurement of local potentials associated with a heterogeneously charged surface. The ability to probe the evolution of local charges in situ could provide vital insight into many industrial, electrochemical, and geochemically relevant interfaces.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

Signatures of polarized chiral spin disproportionation in rare earth nickelates

In rare earth nickelates (RENiO 3 ), electron-lattice coupling drives a concurrent metal-to-insulator and bond disproportionation phase transition whose microscopic origin has long been the subject of active debate. Of several proposed mechanisms, here we test the hypothesis that pairs of self-doped ligand holes spatially condense to provide local spin moments that are antiferromagnetically coupled to Ni spins. These singlet-like states provide a basis for long-range bond and spiral spin order. Using magnetic resonant X-ray scattering on NdNiO 3 thin films, we observe the chiral nature of the spin disproportionated state, with spin spirals propagating along the crystallographic (101) ortho direction. These spin spirals are found to preferentially couple to X-ray helicity, establishing the presence of a hitherto-unobserved macroscopic chirality. The presence of this chiral magnetic configuration suggests a potential multiferroic coupling between the noncollinear magnetic arrangement and improper ferroelectric behavior as observed in prior studies on NdNiO 3 (101) ortho films and RENiO 3 single crystals. Experimentally constrained theoretical double-cluster calculations confirm the presence of an energetically stable spin-disproportionated state with Zhang-Rice singlet-like combinations of Ni and ligand moments

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1982

Partial discharge testing under direct voltage conditions

DC partial discharge (PD) (corona) testing is performed using a multichannel analyzer for pulse storing, and data is collected during increase of voltage and at quiescent voltage levels. Thus high voltage ceramic disk capacitors were evaluated by obtaining PD data interspersed during an accelerated life test. Increased PD activity was found early in samples that later failed catastrophically. By this technique, trends of insulation behavior are revealed sensitively and nondestructively in high voltage dc components.

Bever, R. S.↗

NASA NTRS1993

Elemental analyses of hypervelocity microparticle impact sites on Interplanetary Dust Experiment sensor surfaces

The Interplanetary Dust Experiment (IDE) had over 450 electrically active ultra-high purity metal-oxide-silicon impact detectors located on the six primary sides of the Long Duration Exposure Facility (LDEF). Hypervelocity microparticles (approximately 0.2 to approximately 100 micron diameter) that struck the active sensors with enough energy to break down the 0.4 or 1.0 micron thick SIO2 insulator layer separating the silicon base (the negative electrode), and the 1000 A thick surface layer of aluminum (the positive electrode) caused electrical discharges that were recorded for the first year of orbit. The high purity Al-SiO2-Si substrates allowed detection of trace (ppm) amounts of hypervelocity impactor residues. After sputtering through a layer of surface contamination, secondary ion mass spectrometry (SIMS) was used to create two-dimensional elemental ion intensity maps of microparticle impact sites on the IDE sensors. The element intensities in the central craters of the impacts were corrected for relative ion yields and instrumental conditions and then normalized to silicon. The results were used to classify the particles' origins as 'manmade,' 'natural,' or 'indeterminate.' The last classification resulted from the presence of too little impactor residue, analytical interference from high background contamination, the lack of information on silicon and aluminum residues, or a combination of these circumstances. Several analytical 'blank' discharges were induced on flight sensors by pressing down on the sensor surface with a pure silicon shard. Analyses of these blank discharges showed that the discharge energy blasts away the layer of surface contamination. Only Si and Al were detected inside the discharge zones, including the central craters of these features. Thus far a total of 79 randomly selected microparticle impact sites from the six primary sides of the LDEF have been analyzed: 36 from tray C-9 (Leading (ram), or East, side), 18 from tray C-3 (Trailing (wake), or West, side), 12 from tray B-12 (North side), 4 from tray D-6 (South side), 3 from tray H-11 (Space end), and 6 from tray G-10 (Earth end). Residue from manmade debris was identified in craters on all trays. (Aluminum oxide particle residues were not detectable on the Al/Si substrates.) These results were consistent with the IDE impact record which showed highly variable long term microparticle impact flux rates on the West, Space and Earth sides of the LDEF which could not be ascribed to astronomical variability of micrometeorite density. The IDE record also showed episodic bursts of microparticle impacts on the East, North, and South sides of the satellite, denoting passage through orbital debris clouds or rings.

Simon, Charles G.↗

NASA NTRSDate not supplied

Monodisperse Single-Material Granular Tribocharging Modeling and Experimental Validation

Charge transfer between insulating grains has been a topic of interest for many years as this phenomenon is extremely important to many areas in industry. Of particular interest to NASA is the behavior of electrically insulative dust grains such as those found on the lunar surface. Whether poured from a scoop during sample collection activities, agitated inside a drum via mining robots, or fluidized by a gas plume, particle-particle interactions between similar granular materials will be widespread on the Moon. Designers hope to have a predictive model for how dust grains are charged, transported, and deposited on flight systems to better understand issues electrostatics may cause in future missions. While difference in work function is often seen as a driver for charge transfer between two materials, this is an incomplete representation for insulative particles. Other asymmetries in the system can also lead to charge being transferred: one such being the difference between static vs dynamic particles. Experiments performed under vacuum in the Electrostatics and Surface Physics Laboratory (ESPL) clearly show that particles having more contacts with other particles tend to charge positively and particles having fewer contacts tend to charge negatively, despite being made from the same material. During these experiments, monodisperse (population of single diameter) spherical particles were held in a reservoir which was then elevated at one end to slope into a Faraday cup used to measure bulk charge of the grains. Care was taken to limit the number of spheres bouncing out of the cup, to isolate the beads from the container itself so that only grain-to-grain interactions occurred, and to assure neutrality of the beads before the experiment began. A discrete element method (DEM) modeling package already incorporating many granular mechanics interactions was augmented to include the electrostatic behaviors seen in experiments. The model can reproduce the experimental results above by tracking the number of contacts between pairs of individual grains and applying a charge transfer condition related to this contact parameter. The experimental results as well as their incorporation into the improved modeling suite will be discussed. Future work includes adding additional asymmetries into the experiments/model such as polydisperse populations of spherical particles and irregularly shaped grains.

granular↗

NASA NTRSDate not supplied

Monodisperse Single-Material Granular Tribocharging Modeling and Experimental Validation

electrostatics↗

DOE OSTI2024

Recent progress of MnBi 2 Te 4 epitaxial thin films as a platform for realising the quantum anomalous Hall effect

Since the first realisation of the quantum anomalous Hall effect (QAHE) in a dilute magnetic-doped topological insulator thin film in 2013, the quantisation temperature has been limited to less than 1 K due to magnetic disorder in dilute magnetic systems. With magnetic moments ordered into the crystal lattice, the intrinsic magnetic topological insulator MnBi 2 Te 4 has the potential to eliminate or significantly reduce magnetic disorder and improve the quantisation temperature. Surprisingly, to date, the QAHE has yet to be observed in molecular beam epitaxy (MBE)-grown MnBi 2 Te 4 thin films at zero magnetic field, and what leads to the difficulty in quantisation is still an active research area. Although bulk MnBi 2 Te 4 and exfoliated flakes have been well studied, revealing both the QAHE and axion insulator phases, experimental progress on MBE thin films has been slower. Furthermore, understanding how the breakdown of the QAHE occurs in MnBi 2 Te 4 thin films and finding solutions that will enable mass-produced millimetre-size QAHE devices operating at elevated temperatures are required. In this mini-review, we will summarise recent studies on the electronic and magnetic properties of MBE MnBi 2 Te 4 thin films and discuss mechanisms that could explain the failure of the QAHE from the aspects of defects, electronic structure, magnetic order, and consequences of their delicate interplay. Finally, we propose several strategies for realising the QAHE at elevated temperatures in MnBi 2 Te 4 thin films.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Bardasis-Schrieffer polaritons in excitonic insulators

Bardasis-Schrieffer modes in superconductors are fluctuations in subdominant pairing channels, e.g., $\textit{d}$-wave fluctuations in an $\textit{s}$-wave superconductor. This Rapid Communication shows that these modes also generically occur in excitonic insulators. Further, in $\textit{s}$-wave excitonic insulators, a $\textit{p}$-wave Bardasis-Schrieffer mode exists below the gap energy, is optically active, and hybridizes strongly with photons to form Bardasis-Schrieffer polaritons, which are observable in both far-field and near-field optical experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗