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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Bandgap engineering in van der Waals heterostructures of blue phosphorene and MoS{sub 2}: A first principles calculation

Blue phosphorene (BP) was theoretically predicted to be thermally stable recently. Considering its similar in-layer hexagonal lattice to MoS{sub 2}, MoS{sub 2} could be an appropriate substrate to grow BP in experiments. In this work, the van der Waals (vdW) heterostructures are constructed by stacking BP on top of MoS{sub 2}. The thermal stability and electronic structures are evaluated based on first principles calculations with vdW-corrected exchange-correlation functional. The formation of the heterostructures is demonstrated to be exothermic and the most stable stacking configuration is confirmed. The heterostructures BP/MoS{sub 2} preserve both the properties of BP and MoS{sub 2} but exhibit relatively narrower bandgaps due to the interlayer coupling effect. The band structures can be further engineered by applying external electric fields. An indirect–direct bandgap transition in bilayer BP/MoS{sub 2} is demonstrated to be controlled by the symmetry property of the built-in electric dipole fields. - Graphical abstract: An indirect-direct band gap transition occurs in van der Waals heterostructure of MoS{sub 2}/BP under external electric fields which is demonstrated to be controlled by the symmetry of the built-in electric dipole fields. - Highlights: • The stacking of heterostructures of BP/MoS{sub 2} is demonstrated to be exothermic. • This suggests that it is possible to grow BP using MoS{sub 2} as the substrate. • The band structures of the heterostructures are exploited. • It realizes an indirect–direct gap transition under external electric fields. • The symmetry of the built-in electric dipole fields controls such gap transition.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Adsorption of thiophene on transition metal surfaces with the inclusion of van der Waals effects

Here, we use density functional theory with the inclusion of the van der Waals interaction to study the adsorption of thiophene, C 4 H 4 S, on Pt, Rh, Pd, Au, and Ag (100) surfaces. The five van der Waals (vdW) inclusive functionals we employ are optB86b-vdW, optB88-vdW, optPBE-vdW, revPBE-vdW, and rPW86-vdW2. For comparison we also run calculations with the GGA- Perdew Burke and Ernzerhof (PBE) functional. We examine several adsorption sites with the plane of the molecule parallel or perpendicular to the surface. The most stable configuration on all metals was the site where the center of the thiophene lies over a 4-fold hollow site with the sulfur atom lying close to a top site. Furthermore, we examine several electronic and geometric properties of the adsorbate including charge transfer, modification of the d-band, adsorption energy, tilt angle, and adsorption height. For the coinage metals PBE gives the lowest adsorption energy. For reactive transition metal substrates, revPBE-vdW and rPW86-vdW2 give lower adsorption energies than PBE.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Raman Shifts in Two-Dimensional van der Waals Magnets Reveal Magnetic Texture Evolution

Two-dimensional (2D) van der Waals magnets comprise rich physics that can be exploited for spintronic applications. We investigate the interplay between spin-phonon coupling and spin textures in a 2D van der Waals magnet by combining magneto-Raman spectroscopy with cryogenic Lorentz transmission electron microscopy. Here we find that when stable skyrmion bubbles are formed in the 2D magnet, a field-dependent Raman shift can be observed, and this shift is absent for the 2D magnet prepared in its ferromagnetic state. Correlating these observations with numerical simulations that take into account field-dependent magnetic textures and spin--phonon coupling in the 2D magnet, we associate the Raman shift to field-induced modulations of the skyrmion bubbles and derive the existence of inhomogeneity in the skyrmion textures over the film thickness.

2D van der Waals magnet↗
DOE OSTI2018

Emergence of Interfacial Polarons from Electron–Phonon Coupling in Graphene/h-BN van der Waals Heterostructures

van der Waals heterostructures, vertical stacks of layered materials, offer new opportunities for novel quantum phenomena which are absent in their constituent components. Here we report the emergence of polaron quasiparticles at the interface of graphene/hexagonal boron nitride (h-BN) heterostructures. Using nanospot angle-resolved photoemission spectroscopy, we observe zone-corner replicas of h-BN valence band maxima, with energy spacing coincident with the highest phonon energy of the heterostructure, an indication of Fröhlich polaron formation due to forward-scattering electron–phonon coupling. Parabolic fitting of the h-BN bands yields an effective mass enhancement of ~2.3, suggesting an intermediate coupling strength. Our theoretical simulations based on Migdal–Eliashberg theory corroborate the experimental results, allowing the extraction of microscopic physical parameters. Moreover, renormalization of graphene π-band is observed due to the hybridization with the h-BN band. Lastly, our work generalizes the polaron study from transition metal oxides to van der Waals heterostructures with higher material flexibility, highlighting interlayer coupling as an extra degree of freedom to explore emergent phenomena.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Controlling the Magnetic Anisotropy of the van der Waals Ferromagnet Fe 3 GeTe 2 through Hole Doping

Identifying material parameters affecting properties of ferromagnets is key to optimized materials that are better suited for spintronics. Magnetic anisotropy is of particular importance in van der Waals magnets, since it not only influences magnetic and spin transport properties, but also is essential to stabilizing magnetic order in the two-dimensional limit. Here, we report that hole doping effectively modulates the magnetic anisotropy of a van der Waals ferromagnet and explore the physical origin of this effect. We report Fe 3–x GeTe 2 nanoflakes show a significant suppression of the magnetic anisotropy with hole doping. Electronic structure measurements and calculations reveal that the chemical potential shift associated with hole doping is responsible for the reduced magnetic anisotropy by decreasing the energy gain from the spin–orbit induced band splitting. Our findings provide an understanding of the intricate connection between electronic structures and magnetic properties in two-dimensional magnets and propose a method to engineer magnetic properties through doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Time-Resolved Observation of Hole Tunneling in van der Waals Multilayer Heterostructures

We reported a time-resolved study of quantum-mechanical tunneling of holes between two MoSe 2 monolayers that are separated by a monolayer WS 2 energy barrier. Four-layer heterostructures of MoSe 2 /WS 2 /MoSe 2 /graphene, as well as control samples, were fabricated by mechanical exfoliation and dry transfer techniques. To time-resolve the hole tunneling process, an ultrashort laser pulse was used to excite electrons and holes in both MoSe 2 layers. Here, by utilization of the graphene layer to eliminate carriers in the third MoSe 2 layer, the first MoSe 2 layer is selectively populated with the holes, which then tunnel to the third MoSe 2 layer. By monitoring decay of the hole population with an ultrashort probe pulse, we measure a hole tunneling time of about 20 ps, which is found to slightly increase with the injected carrier density. Besides the fundamental interests of real-time observation of the quantum-mechanical tunneling effect across a nanometer barrier, these results provide quantitative understanding on tunneling mechanisms of charge transfer in van der Waals heterostructures, which is useful for designing sophisticated van der Waals multilayer heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

MX Anti-MXenes from Non-van der Waals Bulks for Electrochemical Applications: The Merit of Metallicity and Active Basal Plane

Two-dimensional transition-metal compounds (2DTMCs) are promising materials for electrochemical applications, but 2DTMCs with metallicity and active basal planes are rare. In this work, we proposed a simple and effective strategy to extract 2DTMCs from non-van der Waals bulk materials and established a material library of 79 2DTMCs, which we named as anti-MXenes since they are composed of one M atomic layer sandwiched by two X atomic layers. By means of density functional theory computations, 24 anti-MXenes were confirmed to be thermodynamically, dynamically, mechanically, and thermally stable. The metallicity and active basal plane endow these anti-MXenes with potential as excellent electrode materials, for example, as electrocatalysts for hydrogen evolution reactions (HER). Among the noble-metal free anti-MXenes with favorable H-binding, CuS can boost HER at the whole range of H coverages, while CoSi, FeB, CoB, and CoP show promise for HER at some specific H coverages. The active sites are the tetra-coordinating nonmetal atoms at the basal planes, thus rendering a very high density of active sites for these materials. CoB is also a promising anode material for lithium-ion batteries, showing low Li diffusion energy barriers, a very high capacity, and a suitable open circuit voltage. Overall, this work promotes the “computational exfoliation” of 2D materials from non-van der Waals bulks and exemplifies the applications of anti-MXenes in various electrochemical processes.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Photoresponse of Natural van der Waals Heterostructures

Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. In this paper, we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ~1500 nm (~830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ~1 ms. Finally, our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.

36 MATERIALS SCIENCE↗
DOE OSTI2013

In x Ga 1– x As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a well-defined InAs–In x Ga 1–x As (0.2 < x < 1) core–shell structure. The core–shell structure then terminates abruptly after about 2 μm in height, and axial growth of uniform composition In x Ga 1–x As takes place without a change in the NW diameter. The In x Ga 1–x As shell composition changes as a function of indium flow, but the core and shell thicknesses and the onset of nonsegregated In x Ga 1–x As axial segment are independent of indium composition. In contrast, no InGaAs phase segregation has been observed when growing on MoS 2 , another two-dimensional (2D) layered material, or via the Au-assisted vapor–liquid–solid (VLS) mechanism on graphene. This spontaneous phase segregation phenomenon is elucidated as a special case of van der Waals epitaxy on 2D sheets. Here, considering the near lattice matched registry between InAs and graphene, InGaAs is forced to self-organize into InAs core and InGaAs shell segments since the lack of dangling bonds on graphene does not allow strain sharing through elastic deformation between InGaAs and graphene.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

What Causes Radiation Belt Enhancements: A Survey of the Van Allen Probes Era

We survey radiation belt enhancement events during the Van Allen Probes era to determine what mechanism is the dominant cause of enhancements and where it is most effective. Two primary mechanisms have been proposed: (1) betatron/Fermi acceleration due to the Earthward radial transport of electrons, which produces monotonic gradients in phase space density (PSD), and (2) “local acceleration” due to gyro/Landau resonant interaction with electromagnetic waves, which produces radially localized growing peaks in PSD. Here, to differentiate between these processes, we examine radial profiles of PSD in adiabatic coordinates using data from the Van Allen Probes and Time History of Events and Macroscale Interactions during Substorms satellites for 80 outer belt enhancement events from October 2012 to April 2017. Here, this study shows that local acceleration is the dominant acceleration mechanism for MeV electrons in the outer belt, with 87% of the enhancement events exhibiting growing peaks. The strong correlation of the location of these with geomagnetic activity further supports this conclusion.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2012

Microgan electron cyclotron resonance ion source in a Van de Graaff accelerator terminal

The Van de Graaff accelerator at IRMM works since many years providing proton, deuteron, and helium beams for nuclear data measurements. The original ion source was of RF type with quartz bottle. This kind of source, as well known, needs regular maintenance for which the accelerator tank must be completely opened. The heavy usage at high currents of the IRMM accelerator necessitated an opening about once every month. In 2010, the full permanent magnet Microgan electron cyclotron resonance (ECR) ion source from PANTECHNIK was installed into a new terminal platform together with a solid state amplifier of 50 W, a dedicated dosing system for 4 gases (with respective gas bottles H{sub 2}, D{sub 2}, He, and Ar), and a set of dedicated power supplies and electronic devices for the remote tuning of the source. The new system shows a very stable behaviour of the produced beam allowing running the Van de Graaf without maintenance for several months. This contribution will describe the full installed system in details (working at high pressure in the terminal, spark effects, and optic of the extraction), as well as beam results in dc or pulsed mode.

43 PARTICLE ACCELERATORS↗
DOE OSTI2012

Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layer

We report on the systematic investigation of optoelectronic properties of tin (IV) sulfide (SnS) van der Waals epitaxies (vdWEs) grown by molecular beam epitaxy (MBE) technique. Energy band simulation using commercial CASTEP code indicates that SnS has an indirect bandgap of size 0.982 eV. Furthermore, our simulation shows that elemental Cu can be used as a p-type dopant for the material. Growth of high quality SnS thin films is accomplished by MBE technique using graphene as the buffer layer. We observed significant reduction in the rocking curve FWHM over the existing published values. Crystallite size in the range of 2-3 {mu}m is observed which is also significantly better than the existing results. Measurement of the absorption coefficient, {alpha}, is performed using a Hitachi U-4100 Spectrophotometer system which demonstrate large values of {alpha} of the order of 10{sup 4} cm{sup -1}. Sharp cutoff in the values of {alpha}, as a function of energy, is observed for the films grown using a graphene buffer layer indicating low concentration of localized states in the bandgap. Cu-doping is achieved by co-evaporation technique. It is demonstrated that the hole concentration of the films can be controlled between 10{sup 16} cm{sup -3} and 5 x 10{sup 17}cm{sup -3} by varying the temperature of the Cu K-cell. Hole mobility as high as 81 cm{sup 2}V{sup -1}s{sup -1} is observed for SnS films on graphene/GaAs(100) substrates. The improvements in the physical properties of the films are attributed to the unique layered structure and chemically saturated bonds at the surface for both SnS and the graphene buffer layer. Consequently, the interaction between the SnS thin films and the graphene buffer layer is dominated by van der Waals force and structural defects at the interface, such as dangling bonds or dislocations, are substantially reduced.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Communication: THz absorption spectrum of the CO{sub 2}–H{sub 2}O complex: Observation and assignment of intermolecular van der Waals vibrations

Terahertz absorption spectra have been recorded for the weakly bound CO{sub 2}–H{sub 2}O complex embedded in cryogenic neon matrices at 2.8 K. The three high-frequency van der Waals vibrational transitions associated with out-of-plane wagging, in-plane rocking, and torsional motion of the isotopic H{sub 2}O subunit have been assigned and provide crucial observables for benchmark theoretical descriptions of this systems’ flat intermolecular potential energy surface. A (semi)-empirical value for the zero-point energy of 273 ± 15 cm{sup −1} from the class of intermolecular van der Waals vibrations is proposed and the combination with high-level quantum chemical calculations provides a value of 726 ± 15 cm{sup −1} for the dissociation energy D{sub 0}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Combining density functional and incremental post-Hartree-Fock approaches for van der Waals dominated adsorbate-surface interactions: Ag{sub 2}/graphene

A combined density functional (DFT) and incremental post-Hartree-Fock (post-HF) approach, proven earlier to calculate He-surface potential energy surfaces [de Lara-Castells et al., J. Chem. Phys. 141, 151102 (2014)], is applied to describe the van der Waals dominated Ag{sub 2}/graphene interaction. It extends the dispersionless density functional theory developed by Pernal et al. [Phys. Rev. Lett. 103, 263201 (2009)] by including periodic boundary conditions while the dispersion is parametrized via the method of increments [H. Stoll, J. Chem. Phys. 97, 8449 (1992)]. Starting with the elementary cluster unit of the target surface (benzene), continuing through the realistic cluster model (coronene), and ending with the periodic model of the extended system, modern ab initio methodologies for intermolecular interactions as well as state-of-the-art van der Waals-corrected density functional-based approaches are put together both to assess the accuracy of the composite scheme and to better characterize the Ag{sub 2}/graphene interaction. The present work illustrates how the combination of DFT and post-HF perspectives may be efficient to design simple and reliable ab initio-based schemes in extended systems for surface science applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Two dimensional graphene nanogenerator by coulomb dragging: Moving van der Waals heterostructure

Harvesting energy from environment is the current focus of scientific community. Here, we demonstrate a graphene nanogenerator, which is based on moving van der Waals heterostructure formed between graphene and two dimensional (2D) graphene oxide (GO). This nanogenerator can convert mechanical energy into electricity with a voltage output of around 10 mV. Systematic experiments reveal the generated electricity originates from the coulomb interaction induced momentum transfer between 2D GO and holes in graphene. 2D boron nitride was also demonstrated to be effective in the framework of moving van der Waals heterostructure nanogenerator. This investigation of nanogenerator based on the interaction between 2D macromolecule materials will be important to understand the origin of the flow-induced potential in nanomaterials and may have great potential in practical applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers

We report recent advances in 3D/2D heterostructures have opened up tremendous opportunities in building highly flexible and durable optoelectronic devices. However, the inherit lack of interfacial bonding and low surface energy of van der Waals surfaces limit the nucleation and growth of 3D materials. Enhancing wettability by providing a porous buffer is effective in growing compound semiconductors on graphene while van der Waals epitaxy of Ge remains challenging. Here, the nucleation of Ge has been significantly improved from an islanded mode to granular modes by using a TiN/AlN multilayered buffer prior to Ge/graphene integration. Highly textured Ge growth with dominating (111), (220), and (311) peaks are identified by x-ray diffraction. The microstructure of the buffer TiN/AlN demonstrates a polycrystalline quality with clean interfaces between each interlayer and the substrate. Kelvin probe force microscopy measurements along the lateral TiN/AlN interface identify a potential drop corresponding to the AlN phase. This contact potential difference between TiN and AlN is the key in generating the out-of-plane dipole moment that modifies the surface energy of the monolayer graphene, resulting in enhanced wettability of the Ge adatoms nucleated on top. Surface dipole induced nucleation of 3D semiconductor thin films on 2D materials via the proper design of buffer layer is fundamentally important to enhance the 3D/2D growth toward flexible optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interacting Dirac magnons in the van der Waals ferromagnet CrBr 3

We study the effects of magnon-magnon interactions in the two-dimensional van der Waals ferromagnet CrBr 3 focusing on its honeycomb lattice structure. Motivated by earlier theoretical predictions of temperature-induced spectral shifts and van Hove singularities in the magnon dispersion [S. S. Pershoguba et al., Phys. Rev. X 8, 011010 (2018)], we go beyond the commonly used thermal magnon approximation by applying second-order perturbation theory in a fully numerical framework. Our analysis uncovers significant deviations from previous analysis: in particular, the predicted singularities are absent, consistent with recent inelastic neutron scattering measurements [S. E. Nikitin et al ., Phys. Rev. Lett. 129, 127201 (2022)]. Moreover, we find that the temperature dependence of the renormalized magnon spectrum exhibits a distinct 𝑇 3 behavior for the optical magnon branch, while retaining 𝑇 2 behavior for the acoustic or down magnon band. This feature sheds light on the collective dynamics of Dirac magnons and their interactions. We further compare the honeycomb case with a triangular Bravais lattice, relevant for ferromagnetic monolayer MnBi 2 ⁢Te 4 , and show that both systems lack singular features while displaying quite distinct thermal trends.

Holstein-Primakoff method↗
DOE OSTI2019

Photon-induced suppression of interlayer tunneling in van der Waals heterostructures

We develop here a theory for interlayer tunneling in van der Waals heterostructures driven under a strong electromagnetic field, using $\text{graphene}/h{-}\mathrm{BN}/\text{graphene}$ as a paradigmatic example. Our theory predicts that strong antiresonances appear at bias voltage values equal to an integer multiple of the light frequency. These features are found to originate from photon-assisted resonant tunneling transitions between Floquet sidebands of different graphene layers, and are unique to two-band systems due to the interplay of both intraband and interband tunneling transitions. Our results point to the possibility of tunneling localization in van der Waals heterostructures using strong electromagnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗