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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Processing and characterization of high-efficiency

Silicon solar cells with efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high efficiency terrestrial solar cells. Preliminary results indicate that the high efficiency cell is more susceptible to radiation damage in that it retains a smaller proportion of its original power output when compared to conventional space cells after exposure to 5 times 10 to the 14th power 1 MeV electrons. However, the cell does maintain a greater overall power output than the conventional cells to which it was compared. Furthermore, this cell does not demonstrate post-electron irradiation photon decay as has been described for cells processed on 1-10 ohm-cm float zone silicon.

Crotty, G. T.↗
NASA NTRS1985

Impurities in silicon solar cells

Metallic impurities, both singly and in combinations, affect the performance of silicon solar cells. Czochralski silicon web crystals were grown with controlled additions of secondary impurities. The primary electrical dopants were boron and phosphorus. The silicon test ingots were grown under controlled and carefully monitored conditions from high-purity charge and dopant material to minimize unintentional contamination. Following growth, each crystal was characterized by chemical, microstructural, electrical, and solar cell tests to provide a detailed and internally consistent description of the relationships between silicon impurity concentration and solar cell performance. Deep-level spectroscopy measurements were used to measure impurity concentrations at levels below the detectability of other techniques and to study thermally-induced changes in impurity activity. For the majority of contaminants, impurity-induced performance loss is due to a reduction of the base diffusion length. From these observations, a semi-empirical model which predicts cell performance as a function of metal impurity concentration was formulated. The model was then used successfully to predict the behavior of solar cells bearing as many as 11 different impurities.

Hopkins, R. H.↗
DOE OSTI2021

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

CdTe↗
DOE OSTI2021

Photovoltaics Research and Development: Device Architecture for Next-Generation CdTe PV. Cooperative Research and Development Final Report, CRADA Number CRD-17-00662

Despite remarkable efficiency improvements at the cell and module level, thin-film CdTe PV suffers from a significant voltage deficit compared with the ideal. The proposed solution is to build cells with fully depleted absorbers and with energy barriers front and back to direct electrons and holes in appropriate directions. Combined with minimal interfacial recombination, this approach, which is similar to the successful silicon HIT cells, circumvents the need for higher lifetimes and carrier concentration to achieve higher voltage, Colorado State is particularly well-positioned to the address the depleted absorbed architecture. It has robust single-vacuum closed-spaced-sublimation deposition chamber, currently being enhanced with new sources for CdTe alloys and grading. It has made reasonable-efficiency cells with absorbers as thin as 0.3 um, it has demonstrated electron reflection at the rear of the absorber with a continuous CdMgTe layer, it has replaced CdS with MgZnO, which has several advantages including tunable band offsets, and it has achieved 16.8% efficiency. It also has a mature suite of measurement equipment for cell evaluation and the experience to effectively analyze its results for refinement in cell fabrication. Several healthy collaborations will continue within the CdTe community.

14 SOLAR ENERGY↗
NASA NTRS1975

Development of a high efficiency thin silicon solar cell

Progress is reported in an attempt to realize higher specific power output and radiation resistance from thin solar cells for space applications. The efforts applied to establishing the technological base for fabricating high efficiency thin solar cells are described. Progress is characterized by continuous improvements in all parameters of the space cell.

Lindmayer, J.↗
NASA NTRS1983

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗
DOE OSTI2023

Auxiliary sequential deposition enables 19%-efficiency organic solar cells processed from halogen-free solvents

High-efficiency organic solar cells are often achieved using toxic halogenated solvents and additives that are constrained in organic solar cells industry. Therefore, it is important to develop materials or processing methods that enabled highly efficient organic solar cells processed by halogen free solvents. In this paper, we report an innovative processing method named auxiliary sequential deposition that enables 19%-efficiency organic solar cells processed by halogen free solvents. Our auxiliary sequential deposition method is different from the conventional blend casting or sequential deposition methods in that it involves an additional casting of dithieno[3,2-b:2’,3’-d]thiophene between the sequential depositions of the donor (D18-Cl) and acceptor (L8-BO) layers. The auxiliary sequential deposition method enables dramatic performance enhancement from 15% to over 18% compared to the blend casting and sequential deposition methods. Furthermore, by incorporating a branched-chain-engineered acceptor called L8-BO-X, device performance can be boosted to over 19% due to increased intermolecular packing, representing top-tier values for green-solvent processed organic solar cells. Comprehensive morphological and time-resolved characterizations reveal that the superior blend morphology achieved through the auxiliary sequential deposition method promotes charge generation while simultaneously suppressing charge recombination. This research underscores the potential of the auxiliary sequential deposition method for fabricating highly efficient organic solar cells using environmentally friendly solvents.

14 SOLAR ENERGY↗
NASA NTRS1984

Failure analysis of thin-film amorphous-silicon solar-cell modules

A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

Kim, Q.↗
NASA NTRS2005

Forward Technology Solar Cell Experiment (FTSCE) for MISSE-5 Verified and Readied for Flight on STS-114

The Forward Technology Solar Cell Experiment (FTSCE) is a space solar cell experiment built as part of the Fifth Materials on the International Space Station Experiment (MISSE-5): Data Acquisition and Control Hardware and Software. It represents a collaborative effort between the NASA Glenn Research Center, the Naval Research Laboratory, and the U.S. Naval Academy. The purpose of this experiment is to place current and future solar cell technologies on orbit where they will be characterized and validated. This is in response to recent on-orbit and ground test results that raised concerns about the in-space survivability of new solar cell technologies and about current ground test methodology. The various components of the FTSCE are assembled into a passive experiment container--a 2- by 2- by 4-in. folding metal container that will be attached by an astronaut to the outer structure of the International Space Station. Data collected by the FTSCE will be relayed to the ground through a transmitter assembled by the U.S. Naval Academy. Data-acquisition electronics and software were designed to be tolerant of the thermal and radiation effects expected on orbit. The experiment has been verified and readied for flight on STS-114.

Jenkins, Phillip P.↗
DOE OSTI2020

High-efficiency single-junction p-i-n GaAs solar cell on roll-to-roll epi-ready flexible metal foils for low-cost photovoltaics

We demonstrate the fabrication and characterization of high-efficiency, single-junction p-i-n GaAs solar cells, on flexible metal foil with epi-ready buffer via roll-to-roll fabrication. Single-junction p-i-n GaAs solar cells were fabricated using metal–organic chemical vapor deposition (MOCVD). Furthermore, an efficiency greater than 13% was obtained at 1 sun, which is the highest reported efficiency on GaAs photovoltaics directly deposited on metal tapes. This exceeds our previously reported study showcasing 11.5% efficiency on single-junction p-n solar cell structure. Improved morphology of p-i-n structure compared with p-n is explained by atomic force microscopy (AFM), scanning electron microscopy (SEM), and helium ion microscopy (HIM) measurements. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis showed reduced Zn diffusion in p-i-n cell compared with the p-n cell. We attribute the improvement in efficiency of p-i-n cells on flexible metal tapes to the quality of the junction, surface morphology, controlled diffusion of species within the active layers, and increase in absorption due to the optimized intrinsic layer thickness.

14 SOLAR ENERGY↗
DOE OSTI2026

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
NASA NTRS2004

Environment of Space Interactions with Space Systems

The primary product of this research project was a computer program named SAVANT. This program uses the Displacement Damage Dose (DDD) method of calculating radiation damage to solar cells. This calculation method was developed at the Naval Research Laboratory, and uses fundamental physical properties of the solar cell materials to predict radiation damage to the solar cells. This means that fewer experimental measurements are required to characterize the radiation damage to the cells, which results in a substantial cost savings to qualify solar cells for orbital missions. In addition, the DDD method makes it easier to characterize cells that are already being used, but have not been fully tested using the older technique of characterizing radiation damage. The computer program combines an orbit generator with NASA's AP-8 and AE-8 models of trapped protons and electrons. This allows the user to specify an orbit, and the program will calculate how the spacecraft moves during the mission, and the radiation environment that it encounters. With the spectrum of the particles, the program calculates how they would slow down while traversing the coverglass, and provides a slowed-down spectrum.

Source record↗
NASA NTRS1978

Characterization of nonideal silicon in terms of lifetime and diffusion length

Experimental methods have been evaluated for the determination of lifetime and diffusion length in silicon intentionally doped with potentially lifetime-degrading impurities which may be present in low-cost silicon intended for use in terrestrial flat-plate arrays. Results obtained with these methods have been compared for mutual consistency. The effects of a number of impurities on bulk lifetime were determined from steady-state photoconductivity, and solar cells fabricated from this material were characterized in terms of diffusion length using a penetrating light technique. Comparison was made with results obtained by others using photoconductivity decay. General agreement was found in terms of the hierachy of impurities to which the lifetime is sensitive. The utility of the steady-state photoconductivity method is established even in the presence of considerable trapping.

Othmer, S.↗
NASA NTRS1991

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed.

Wanlass, M. W.↗
NASA NTRS1986

High efficiency crystalline silicon solar cells

A review of the entire research program since its inception ten years ago is given. The initial effort focused on the effects of impurities on the efficiency of silicon solar cells to provide figures of maximum allowable impurity density for efficiencies up to about 16 to 17%. Highly accurate experimental techniques were extended to characterize the recombination properties of the residual imputities in the silicon solar cell. A numerical simulator of the solar cell was also developed, using the Circuit Technique for Semiconductor Analysis. Recent effort focused on the delineation of the material and device parameters which limited the silicon efficiency to below 20% and on an investigation of cell designs to break the 20% barrier. Designs of the cell device structure and geometry can further reduce recombination losses as well as the sensitivity and criticalness of the fabrication technology required to exceed 20%. Further research is needed on the fundamental characterization of the carrier recombination properties at the chemical impurity and physical defect centers. It is shown that only single crystalline silicon cell technology can be successful in attaining efficiencies greater than 20%.

Sah, C. Tang↗
DOE OSTI2025

Charge carrier extraction and recombination effects in GaInAs/GaAsP multi-quantum well solar cells

The carrier extraction and transport mechanisms as well as the relative contributions of radiative and non-radiative recombination processes are investigated in high-quality strain-balanced GaInAs/GaAsP multi-quantum well solar cells recently implemented in record efficiency multijunction solar cells. A comprehensive suite of complementary characterization techniques including temperature- and suns-dependent photoluminescence and photovoltaic measurements are employed to analyze thermal escape and tunneling rates, which demonstrate the need to move beyond simple drift-diffusion models of p–n junctions. This study examines the processes that best characterize the operation of these devices across varying temperatures using a simple two-diode model, incorporating multiple transport protocols, and provides insights into the performance-limiting processes and pathways for their optimization.

14 SOLAR ENERGY↗
NASA NTRS1975

Evaluation of silicon ribbon material for solar cell fabrication

Optical microscopy, electron microscopy, and X-ray diffraction were utilized to characterize silicon ribbon structure. Complex twin formation was observed in nearly all ribbons examined. Twins formed in the 110-plane 112-line ribbon orientation appear stable, and this orientation may be preferable when the ribbon is utilized for solar cells. In addition to twinning, grain boundaries and other structural defects were observed in the ribbon material. Hall effect, resistivity, spreading resistance, surface photovoltage, and solar cell electrical/optical measurements were performed on ribbon samples and correlated with structural and ribbon growth characteristics. Only those ribbon samples with either single-crystal structure or with 'parallel' twin formations were capable of solar-cell performance approaching that of Czochralski material.

Leipold, M.↗