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At least 163 records · Page 9

Sn doping on partially dealuminated Beta zeolite by solid state ion exchange for 5‐hydroxymethylfurfural ( 5‐HMF ) production from glucose

Abstract BACKGROUND The conversion of glucose into 5‐hydroxymethylfurfural (5‐HMF) involves the isomerization of glucose to fructose catalyzed by Lewis acid and subsequent dehydration of fructose catalyzed by Brönsted acid. In this work, in order to obtain a high yield of 5‐HMF, a series of Sn‐Al‐Beta catalysts containing both Lewis and Brönsted acid sites were prepared by a convenient solid state ion exchange (SSIE) method using partially dealuminated Beta zeolite and tin(II) acetate. RESULTS The obtained bifunctional catalysts were investigated for one‐pot production of 5‐HMF from glucose in the ionic liquid (IL) [C 4 mim]Cl. Among various catalysts, Sn‐Al‐Beta‐ 4 ‐ 8 exhibited the best catalytic performance, giving a 5‐HMF yield of 54% under optimal reaction conditions (393 K, 2 h), along with a glucose conversion of 81%. The Sn‐Al‐Beta‐ 4‐8 catalyst and IL were regenerated by the extraction of 5‐HMF, and the reactivity was reserved after five runs of recycling. In addition to glucose, the Sn‐Al‐Beta‐ 4‐8 /[C 4 mim]Cl system was also proven to have the potential to effectively convert other carbohydrates into 5‐HMF. CONCLUSION The results suggested that the catalyst is convenient to prepare and has preferable efficiency and stability in the conversion of carbohydrates into 5‐HMF. © 2022 Society of Chemical Industry (SCI).

Zhang, Wei↗

Operando synchrotron X-ray analysis of melt pool dynamics in an Al-Sn immiscible alloy

The melt flow in an Al-50vol.% Sn immiscible alloy, produced by single-track laser melting of Al and Sn elemental powders, was studied in real time. High-speed synchrotron X-ray imaging was used to track Al and Sn liquids’ movements, and also to examine elemental distributions in the laser tracks, complimented by electron microscopy after solidification. Key aspects, including melt pool geometry, keyhole instability, and flow dynamics (flow pattern and velocity), were examined using digital image analysis. Relatively deeper melt pools formed at 400 W and 300 mm/s exhibited greater stability, with smooth surfaces, consistent outward flow, and minor vortices near the keyhole. In contrast, shallower pools produced at higher scanning speeds (>500 mm/s) demonstrated greater instability with increased surface waviness, and stronger velocity fluctuations, leading to numerous micro-vortices and increased Al-Sn heterogeneity. Velocity scale estimations, supported by experimental observations, examined the roles of vapour pressure, Marangoni effect, buoyancy, inertial, and surface tension forces in the flow. The results revealed that vapour pressure and mechanical waves dominated at high scanning speeds (shallow pools), while Marangoni forces were equally significant in deep pools at lower speeds (300 mm/s). Buoyancy was found to have minimal impact in both cases. Furthermore, the interaction between inertial and surface tension forces played a critical role in determining the degree of waviness of the pools’ surfaces. These findings offer valuable insights into melt pool dynamics during laser processing of immiscible alloys and other metallic systems using elemental powders, and provide guidance for developing high-fidelity computational fluid dynamics models.

immiscible alloys↗

Ghost states and surface structures of the charge density wave kagome metal ScV 6 Sn 6

In this work, we investigate the high-temperature phase of the kagome metal ScV 6 Sn 6 using scanning tunneling microscopy/spectroscopy (STM/S) and density functional theory calculations. STM topographic images of the cleaved sample reveal two distinct surface terminations: flat islands with Sn termination and trenches terminated by kagome layers with Sn as the outermost atomic layer. STS measurements on the Sn-terminated and kagome-terminated surfaces show significant differences, in particular the presence of large density of states near the Fermi level in the former case. Our first-principles calculations reveal that the charge density on the kagome-terminated surface gives rise to “ghost states” which show intensity away from surface atoms, arising due to hybridization of orbitals above the surface. These states can obscure the intrinsic properties of the surface, potentially leading to misattribution of the surface termination. This underscores the need for careful interpretation in STM studies, especially when discerning surface states of localized states. Understanding the surface structure of this versatile quantum material provides essential information for interpreting surface-sensitive experiments, tailoring material properties, engineering interfaces, and controlling stability and reactivity. This knowledge paves the way for further exploration and potential applications of kagome lattice materials in various fields, including quantum computing, topological physics, and advanced electronic devices.

36 MATERIALS SCIENCE↗

Electrochemical recovery of Nd using liquid metals (Bi and Sn) in LiCl-KCl-NdCl 3

Highly efficient recovery of Nd into liquid metals of Bi and Sn was achieved in molten LiCl-KCl-NdCl 3 electrolyte at 773–973 K by leveraging the strong interactions of Nd with liquid metals. Based on the emf measurements of Nd-Sn and Nd-Bi alloys, the activity values of Nd were determined as low as 1.1–5.8×10 –13 in both liquid metals at 973 K while the solubility of Nd was found to be 1.46 mol% in Sn and 5.65 mol% in Bi. Both liquid metals demonstrated high round-trip coulombic efficiencies (>99.3%) during deposition-removal cycles of 10–50 mA cm –2 and high recovery capacity up to approximately 20 mol% Nd beyond the solubility limit. In addition, a high Nd recovery yield (84–90%) with respect to the applied charge was confirmed based on chemical analysis of electrolysis products in Bi after constant current electrolysis (–50 mA cm –2 ) at 873–973 K. Overpotentials during the Nd deposition process were attributed to charge-transfer and mass-transport resistances based on the current-potential curve and electrochemical impedance spectroscopy. The charge-transfer kinetics of Nd deposition into liquid metals was facile with high exchange current densities at ~220 mA cm –2 . Finally, the exceptionally high recovery efficiency for Nd in the molten chloride is thought to result from strong chemical interactions (i.e., low activity) of Nd in liquid metals that encourage one-step reduction, i.e., Nd 3+ + 3e → Nd(in Bi or Sn) by effectively suppressing side reaction pathways from multivalent states (Nd 2+ and Nd 3+ ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetic and transport properties of Fe-doped Weyl semimetal Co 3 Sn 2 S 2

Ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 has recently attracted a lot of interest on account of its large non-saturating magnetoresistance and the high carrier mobility common to topological semimetals. Moreover, the material also provides a platform for studying the interplay between the intrinsic magnetism and topological band structures, which generates a significant anomalous Hall effect. Chemical doping is the usual approach to adjust materials’ properties, and it can lead to fascinating results. Here, we present the influence of Fe-doping on the magnetic and transport properties of polycrystalline Co 3 Sn 2 S 2 . The Fe-doping suppresses the sample’s magnetic order, increases the electrical resistivity, results in a skew-scattering contribution to the anomalous Hall effect and Fe impurities cause the Kondo effect. In addition, we report on the impact of Fe-doping on the magnetoresistance of Co 3 Sn 2 S 2 , where Fe-doping leads to a dramatic decline in magnetoresistance. Furthermore, the hysteresis behavior in the low magnetic field region, detected previously in nanoflake samples only, is observed in both pure and Fe-doped Co 3 Sn 2 S 2 bulk samples. Finally, our findings serve as a reference and source of inspiration for future chemical doping research on topological semimetals.

36 MATERIALS SCIENCE↗

Magnetic ordering in Eu 2 In and Eu 2 Sn

Eu 2 In and Eu 2 Sn crystallize in the orthorhombic Co 2 Si-type structure (oP12, Pnma, No. 62) with In and Sn atoms occupying one 4c site and the Eu atoms filling two other 4c sites. Eu 2 In has a nearly ideal first-order magnetostructural transition (FOMT) at 55 K with a hysteresis of less than 0.1 K, a large entropy change and an adiabatic temperature change of 5.0 K in a field of 2 T. The anhysteretic nature of the FOMT is likely due to there being no change in cell symmetry and relatively small changes in the lattice parameters. There is no magnetostructural transition in Eu2Sn. In this work we present the results of powder neutron diffraction, magnetization, and Eu Mössbauer spectroscopy aimed to investigate the nature of magnetic order for both Eu 2 In and Eu 2 Sn. The Eu Mössbauer spectrum of Eu 2 In at 5 K shows two equal area components, consistent with Eu occupying two equal multiplicity crystallographic sites. However, the different hyperfine fields (B) of 27 T and 17 T suggest that the magnetic environments of the Eu moments on the two 4c sites are different. Neutron diffraction data at 2.5 K show that in Eu 2 In the order is ferromagnetic, with Eu moments on both Eu sites oriented parallel to the a-axis; moment values of 6.8 μB and 6.5 μB were found. For Eu 2 Sn measurements find two antiferromagnetic transitions, which are corroborated by neutron diffraction. Analysis of density-functional theory calculations shows negligible energy difference between differing magnetic configurations, indirectly supporting stability of multiple magnetic structures observed experimentally. While the transition at T N1 = 30 K corresponds to the formation of a simple k 1 = 0 antiferromagnetic structure with Eu-moments pointing along the b-axis, at T N2 = 13 K a coexisting second magnetic order with k 2 = [0, ½, ½] appears.

36 MATERIALS SCIENCE↗

Synergistic role of Sn-doping on the thermal and electrical properties of sinnerite Cu 6 As 4 S 9

Sinnerite Cu 6 As 4 S 9 has been identified as a promising material for optoelectronic applications, with potential for other energy-related applications; however, knowledge of the electrical and thermal properties as well as the mechanisms underlying transport in sinnerite is lacking. Here, we present an investigation of the synthesis, structural, thermal and electrical transport properties of stoichiometric and Sn-doped Cu 6 As 4 S 9 . Sinnerite has a triclinic lattice structure, with highly distorted local atomic coordination environments that, in part, results in its complex structure and bonding. Our results and analyses indicate As 4s 2 lone pair-induced distortions and strong lattice anharmonicity that leads to a relatively short phonon mean free path, resulting in intrinsically very low thermal conductivity. The electrical resistivity for both compositions, Cu 6 As 4-x Sn x S 9 (x = 0, 0.2), are relatively high and varies little with temperature, typical of degenerate semiconductors. An increase in mobility and electrical conductivity was obtained by Sn doping in Cu 6 As 3.8 Sn 0.2 S 9 . This work demonstrates an effective route to synthesize bulk sinnerite as well as advances the knowledge of the properties of sinnerite, as this and other ternary chalcogenides continue to be of interest for potential technologically significant applications.

36 MATERIALS SCIENCE↗

Epitaxial columnar growth of strain-free antiferromagnetic Weyl semimetal Mn 3 Sn on wurtzite c -plane GaN/Al 2 O 3 (0001)

Weyl semimetal thin films with excellent crystalline quality are of great interest for antiferromagnetic spintronics. Mn 3 Sn is one Weyl semimetal with great properties and promise for exciting science and applications. It has proven very challenging, however, to grow Mn 3 Sn thin films with smooth surfaces, negligible strain, and excellent crystallinity. In this work, we discuss the successful preparation of epitaxial Mn 3 Sn (0001)-oriented thin films via molecular beam epitaxial growth on c -plane wurtzite GaN which was grown by MBE on Al 2 O 3 (0001). We present the reflection high energy electron diffraction analysis along with x-ray diffraction in order to demonstrate the crystalline quality of the film, and we give atomic models to explain the epitaxial orientation relationships between the crystal lattices of the substrate, GaN layer, and Mn 3 Sn layer. Importantly, we discuss the film lattice parameters as compared to expected values, demonstrating negligible strain both in-plane and out-of-plane . Atomic force microscopy reveals an epitaxial columnar growth mode characterized by flat-top-mesa islands, while scanning tunneling microscopy shows the atomically smooth surfaces of the mesa-top structures. Finally, Rutherford backscattering informs the stoichiometry of the film as well as the layer thicknesses.

Chiral antiferromagnetic material↗

Low-temperature thermal properties of Fe-doped Co 3 Sn 2 S 2

Recent studies on Co 3 Sn 2 S 2 usually focus on its electrical and magnetic behaviors as it is a Weyl semimetal, half metal, and anisotropic ferromagnet at the same time. Only a few works looked into its low-temperature thermal characteristics. Here, in this study, we report the low-temperature heat capacity, Seebeck coefficient, and thermal conductivity of Fe-doped Co 3 Sn 2 S 2 , as well as the formation energies, band structures, and spin-polarized density of states calculated by using the spin-polarized relativistic Korringa-Kohn-Rostoker – Green’s function method (sprKKR). The heat capacity data reveal that the sample with a heavier Fe-doping level has a lower Debye temperature and a larger density of states at the Fermi level, the latter confirmed by our ab initio computational results. The Fe-doping increases the absolute value of the Seebeck coefficient at temperatures above 120 K and dramatically suppresses the thermal conductivity. Furthermore, we discuss how the external applied magnetic field affects the Seebeck coefficient and thermal conductivity of pristine Co 3 Sn 2 S 2 . Our findings provide a detailed reference and may stimulate future investigations into the low-temperature thermal transport properties of Co 3 Sn 2 S 2 and other compounds in the shandite family.

36 MATERIALS SCIENCE↗

Effect of Sn oxides on the thermal conductivity of polycrystalline SnSe

SnSe is a promising thermoelectric material, with intrinsically low lattice thermal conductivity, κL. Surprisingly, in several reports, polycrystalline samples are found to have a higher thermal conductivity than single crystals. This disparity has been attributed to trace amounts of thermally conductive Sn oxides at the grain boundaries of polycrystalline samples. The same culprit was recently proposed to explain the reduction of κL in purified, oxide-free, SnSe polycrystals. Here, we test this hypothesis by: (i) tuning the type of oxide in SnSe by exploiting thermodynamic stability regions, since Sn-rich or Sn-poor compositions favour the formation of SnO or SnO 2 , respectively; and (ii) varying the quantity of SnO 2 by intentionally oxidizing SnSe powder before consolidation, to obtain samples with quantifiable amounts - up to 15% - of SnO 2 . We find that the κL of SnSe is impervious to changes in the type or the amount of Sn oxide present in the samples. Our results show that a simple “rule of mixtures” cannot be used to estimate the effect of grain boundary oxides on the thermal conductivity of SnSe. These results call for an improved understanding of the intriguing thermal transport mechanisms in SnSe and numerous other systems where a two-phase transport is presumed.

36 MATERIALS SCIENCE↗

Crystallographic ordering of Al and Sn in α-Ti

Increasing attention is being paid to α (2) Ti 3 (Al,Sn) precipitation from the α phase of titanium alloys owing to its effect on slip band formation, localisation and the implications for fatigue performance in jet engine titanium. However, the early stages of α 2 precipitation have historically been difficult to observe by electron microscopy, neutron diffraction or atom probe analysis. Here, small angle X-ray scattering is used to reexamine the phase boundary in binary Ti-Al and Ti-Sn alloys with around 500 ppmw O. It is found that the phase boundaries in the literature are approximately correct, at 6.2 wt.% Al and 16.9 wt.% Sn, and that this favours the use of Al as a solid solution strengthener over Sn for ambient temperature applications. However, once O content and phase partitioning in α + β alloys are taken into account, this implies that Al eq limits for future alloy design of critical rotating parts should be lowered substantially.

36 MATERIALS SCIENCE↗

Study of Tritium Diffusivity in Pure and Sn-Defective Zr: A First-Principles Density Functional Theory Approach

Zirconium alloys (e.g., zircaloy-4) are used as tritium ( 3 H) getter materials in tritium-producing burnable absorber rods (TPBARs) owing to their ability to capture 3 H and chemically convert them into metal hydrides. Understanding of 3 H diffusion mechanisms in zircaloy is crucial for the optimal design of material performance in nuclear technology. Here, for this work, we perform first-principles density functional theory calculations to study the 3 H diffusion mechanism in pure and impure Zr with a low concentration of tin (Sn) atoms to determine the impact of the presence of Sn on the movement of 3 H atoms through the material. First, we calculated the diffusion barriers for 3 H in pure Zr by taking different migration pathways. We then introduced a low concentration of Sn impurity and systematically explored the impurity effect on the diffusion barriers for 3 H. Using our calculated diffusion energy barriers, we further obtained the diffusion coefficients and analyzed the results by comparing them with the experimental and previously calculated values. A diffusion coefficient of the order of 10 –8 m 2 /s is predicted. We also found that the presence of a Sn impurity could reduce the diffusivity up to 4 orders of magnitude. In conclusion, our results could serve as guidelines for further experimental investigations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Cooperative Atomically Dispersed Fe–N 4 and Sn–N x Moieties for Durable and More Active Oxygen Electroreduction in Fuel Cells

One grand challenge for deploying porous carbons with embedded metal–nitrogen–carbon (M–N–C) moieties as platinum group metal (PGM)-free electrocatalysts in proton-exchange membrane fuel cells is their fast degradation and inferior activity. Here, we report the modulation of the local environment at Fe–N 4 sites via the application of atomic Sn–N x sites for simultaneously improved durability and activity. We discovered that Sn–N x sites not only promote the formation of the more stable D2 FeN 4 C 10 sites but also invoke a unique D3 SnN x –Fe II N 4 site that is characterized by having atomically dispersed bridged Sn–N x and Fe–N 4 . This new D3 site exhibits significantly improved stability against demetalation and several times higher turnover frequency for the oxygen reduction reaction (ORR) due to the shift of the reaction pathway from a single-site associative mechanism to a dual-site dissociative mechanism with the adjacent Sn site facilitating a lower overpotential cleavage of the O–O bond. This mechanism bypasses the formation of the otherwise inevitable intermediate that is responsible for demetalation, where two hydroxyl intermediates bind to one Fe site. Lastly, a mesoporous Fe/Sn-PNC catalyst exhibits a positively shifted ORR half-wave potential and more than 50% lower peroxide formation. This, in combination with the stable D3 site and enriched D2 Fe sites, significantly enhanced the catalyst’s durability as demonstrated in membrane electrode assemblies using complementary accelerated durability testing protocols.

36 MATERIALS SCIENCE↗

Ternary aromatic and anti-aromatic clusters derived from the hypho species [Sn 2 Sb 5 ] 3-

Heterometallic clusters have attracted broad interests in the synthetic chemistry due to their various coordination modes and potential applications in heterogeneous catalysis. Here we report the synthesis, experimental, and theoretical characterizations of four ternary clusters ([M 2 (CO) 6 Sn 2 Sb 5 ] 3- (M = Cr, Mo), and [(MSn 2 Sb 5 ) 2 ] 4- , (M = Cu, Ag)) in the process of capturing the hypho - [Sn 2 Sb 5 ] 3- in ethylenediamine (en) solution. We show that the coordination of the binary anion to transition-metal ions or fragments provides additional stabilization due to the formation of locally σ-aromatic units, producing a spherical aromatic shielding region in the cages. While in the case of [Mo 2 (CO) 6 Sn 2 Sb 5 ] 3- stabilization arises from locally σ-aromatic three-centre and five-centre two-electron bonds, aromatic islands in [(AgSn 2 Sb 5 ) 2 ] 4- and [(CuSn 2 Sb 5 ) 2 ] 4- render them globally antiaromatic. This work describes the coordination chemistry of the versatile building block [Sn 2 Sb 5 ] 3- , thus providing conceptual advances in the field of metal-metal bonding in clusters.

36 MATERIALS SCIENCE↗

Nanoscale visualization and spectral fingerprints of the charge order in ScV 6 Sn 6 distinct from other kagome metals

Charge density waves (CDWs) in kagome metals have been tied to many exotic phenomena. Here, using spectroscopic-imaging scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we study the charge order in kagome metal ScV 6 Sn 6 . The similarity of electronic band structures of ScV 6 Sn 6 and TbV 6 Sn6 (where charge ordering is absent) suggests that charge ordering in ScV 6 Sn 6 is unlikely to be primarily driven by Fermi surface nesting of the Van Hove singularities. In contrast to the CDW state of cousin kagome metals, we find no evidence supporting rotation symmetry breaking. Differential conductance dI/dV spectra show a partial gap Δ 1 CO ≈ 20 meV at the Fermi level. Interestingly, dI/dV maps reveal that charge modulations exhibit an abrupt phase shift as a function of energy at energy much higher than Δ 1 CO , which we attribute to another spectral gap. Our experiments reveal a distinctive nature of the charge order in ScV 6 Sn 6 with fundamental differences compared to other kagome metals.

36 MATERIALS SCIENCE↗

Carrier control in Sn–Pb perovskites via 2D cation engineering for all-perovskite tandem solar cells with improved efficiency and stability

All-perovskite tandem solar cells are promising for achieving photovoltaics with power conversion efficiencies above the detailed balance limit of single-junction cells, while retaining the low cost, light weight and other advantages associated with metal halide perovskite photovoltaics. However, the efficiency and stability of all-perovskite tandem cells are limited by the Sn-Pb-based narrow-bandgap perovskite cells. Here we show that the formation of quasi-two-dimensional (quasi-2D) structure (PEA) 2 GAPb 2 I 7 from additives based on mixed bulky organic cations phenethylammonium (PEA+) and guanidinium (GA+) provides critical defect control to substantially improve the structural and optoelectronic properties of the narrow-bandgap (1.25 eV) Sn-Pb perovskite thin films. Additionally, this 2D additive engineering results in Sn-Pb-based absorbers with low dark carrier density (~1.3 x 10 14 cm -3 ), long bulk carrier lifetime (~9.2 us) and low surface recombination velocity (~1.4 cm s -1 ), leading to 22.1%-efficient single-junction Sn-Pb perovskite cells and 25.5%-efficient all-perovskite two-terminal tandems with high photovoltage and long operational stability.

14 SOLAR ENERGY↗

Understanding the evolution of liquid and solid microjets from grooved Sn and Cu samples using radiography

Experiments were performed on grooved Sn and Cu samples to study the temporal evolution of microjets. Jets were generated by the impact of gun-launched flyer plates against the back of grooved targets made from either Cu or Sn (groove depth of ~250 μm). The Hugoniot states in the various Sn targets encompassed conditions where solid phases are maintained throughout (7 and 16 GPa) and also conditions where melting occurs upon the release of compression (25 and 34 GPa); the transition occurs near a Hugoniot pressure of 23 GPa. Cu targets at 27 and 56 GPa provide comparisons in which the jets move at similar speeds but remain solid. In all cases, the spatial distribution of mass within the microjets was measured using high-speed synchrotron radiography. The result is a time history of the jet thickness profile from which quantities like total jet mass and jet velocity can be derived. In both the solid and liquid states, we generally observe that an increase in the shock strength leads to an increase in jet mass. However, this trend breaks down for Hugoniot states near the transition from continuously solid to melted-on-release. This is evidenced by the observation that there was no difference in the rate of mass flow in Sn jets at 16 and 25 GPa, while similar pressure jumps on either side of this range caused substantial changes in the jet mass. This contrasts with the behavior of smaller polishing defects that were present on the same samples (~1 μm deep). From these, no ejecta mass was detected below the melt boundary, but obvious microjets were generated once melting occurred. This indicates that crossing the bulk melt-on-release threshold can alternately promote or inhibit the flow of mass into microjets based on the amplitude of the initial perturbation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effects of Sn substitution in SrRuO 3 epitaxial films

Epitaxial SrRu 1–x Sn x O 3 (0 ≤ x ≤ 1) thin films were deposited on SrTiO 3 (001) substrates by sequential two-target synthesis using pulsed laser deposition to achieve stable phases in this family of quaternary perovskites. The SrRu 1–x Sn x O 3 films exhibit a good crystalline quality, a sharp interface between film and substrate, and an atomically smooth surface. A gradual expansion of the c-axis lattice parameter was observed with Sn doping serving as a means to tune chemical pressure and magnetism. With an increase in Sn doping, the resistivity of the film increased, and the ferromagnetism decreased. These results illustrate use of lattice engineering, e.g., tuning of c-axis lattice parameter with chemical doping, to control electronic and magnetic properties of epitaxial thin films for applications in oxide electronics.

36 MATERIALS SCIENCE↗