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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9

In Situ Attenuated Total Reflectance Infrared Spectroelectrochemistry (ATR-IR-SEC) for the Characterization of Molecular Redox Processes on Surface-Proximal Doped Silicon ATR Crystal Working Electrodes

In situ mid-infrared spectroscopy is a powerful technique for understanding the mechanism of CO 2 reduction (CO 2 R) catalysts because it enables the direct detection of catalytic intermediates and products. Moreover, spectroelectrochemistry (SEC), the coupling of spectroscopy with electrochemistry, allows spectroscopic changes to be correlated with applied potentials to reveal potential-dependent intermediates that are often relevant to photoelectrochemical reactions. Hybrid photoelectrodes, comprised of a narrow bandgap semiconductor, like silicon (Si), with a covalently-linked molecular catalyst, are a promising platform for sunlight-driven catalysis, but characterization of the catalytic mechanism(s) is challenging under photoelectrochemical conditions, particularly when the catalyst is present in monolayer or less concentrations. Here, we have developed a new strategy to use multiple-reflection attenuated total reflectance IR spectroscopy (ATR-IR) coupled with electrochemistry to characterize catalysts directly integrated with a semiconductor surface under applied potential. We show that by surface-proximal n-type or p-type doping of the top ~100-200 nm of the crystal surface, Si ATR crystals can be used simultaneously as the internal reflection element and semiconductor working electrode for ATR-IR-SEC measurements. The surface-proximal doping strategy yields a quasi-equipotential surface with excellent infrared transparency that would have been compromised by free carrier absorption if the crystal was uniformly doped. This approach permits the catalytically-active functionalized surface to be directly probed without modification and overcomes signal-to-noise limitations of other strategies that use separately deposited working electrodes on Si ATR crystals. Proof-of-concept ATR-IR-SEC spectra were collected during the reduction and oxidation of monolayers of Re- and Ru-based transition metal carbonyl complexes, respectively, verifying the viability of the technique to probe redox processes associated with CO 2 R catalysts on Si electrode surfaces with high sensitivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Low-cost, high-efficiency silicon by heat exchanger method and fixed abrasive slicing technique

The paper describes the heat exchanger method (HEM) for growing silicon crystals. The problem of ingot cracking was solved by using a graded structure silica crucible, and vacuum processing eliminated expensive high-purity argon. Solar cells fabricated from HEM silicon demonstrated conversion efficiencies up to 15% (AM1) at low cost, using square cross-section, single crystal silicon. A modified multiblade slurry machine was adapted for multiwire fixed abrasive slicing of silicon which uses a diamond attached to wires; this method provides a conversion ratio of 1.08 sq m of wafer per kg of silicon ingot, and produces wafers free of edge chipping with a surface damage of 3-5 microns.

Khattak, C. P.↗

Semiconductor processing

The primary thrust of the semiconductor processing is outlined. The purpose is to (1) advance the theoretical basis for bulk growth of elemental and compound semiconductors in single crystal form, and (2) to develop a new experimental approaches by which semiconductor matrices with significantly improved crystalline and chemical perfection can be obtained. The most advanced approaches to silicon crystal growth is studied. The projected research expansion, directed toward the capability of growth of 4 inch diameter silicon crystals was implemented. Both intra and interdepartmental programs are established in the areas of process metallurgy, heat transfer, mass transfer, and systems control. Solutal convection in melt growth systems is also studied.

Source record↗

Automated array assembly task development of low-cost polysilicon solar cells

Development of low cost, large area polysilicon solar cells was conducted in this program. Three types of polysilicon materialk were investigated. A theoretical and experimenal comparison between single crystal silicon and polysilicon solar cell efficiency was performed. Significant electrical performance differences were observed between types of wafer material, i.e. fine grain and coarse grain polysilicon and single crystal silicon. Efficiency degradation due to grain boundaries in fin grain and coarse grain polysilicon was shown to be small. It was demonstrated that 10 percent efficient polysilicon solar cells can be produced with spray on n+ dopants. This result fulfills an important goal of this project, which is the production of batch quantity of 10 percent efficient polysilicon solar cells.

Jones, G. T.↗

Compact Radiative Control Structures for Millimeter Astronomy

We have designed, fabricated, and tested compact radiative control structures, including antireflection coatings and resonant absorbers, for millimeter through submillimeter wave astronomy. The antireflection coatings consist of micromachined single crystal silicon dielectric sub-wavelength honeycombs. The effective dielectric constant of the structures is set by the honeycomb cell geometry. The resonant absorbers consist of pieces of solid single crystal silicon substrate and thin phosphorus implanted regions whose sheet resistance is tailored to maximize absorption by the structure. We present an implantation model that can be used to predict the ion energy and dose required for obtaining a target implant layer sheet resistance. A neutral density filter, a hybrid of a silicon dielectric honeycomb with an implanted region, has also been fabricated with this basic approach. These radiative control structures are scalable and compatible for use large focal plane detector arrays.

Brown, Ari D.↗

Method of increasing minority carrier lifetime in silicon web or the like

A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers is achieved by processing the web in an atmosphere of a selected gas, e.g., oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900 to 1200 C.

Liu, J. K.↗

The STAR-X X-Ray Telescope Assembly (XTA)

The Survey and Time-domain Astrophysical Research eXplorer (STAR-X) science goals are to discover what powers the most violent explosions in the Universe, understand how black holes grow across cosmic time and mass scale, and measure how structure formation heats the majority of baryons in the Universe. To achieve these goals, STAR-X requires a powerful X-ray telescope with a large field of view, large collecting area, and excellent point spread function. The STAR-X instrument, the X-Ray Telescope Assembly (XTA), meets these requirements using a powerful X-ray mirror technology based on precision-polished single crystal silicon and a mature CCD detector technology. The XTA is composed of three major subsystems: an X-ray Mirror Assembly (MA) of high resolution, lightweight mirror segments fabricated out of single crystal silicon; a Focal Plane Assembly (FPA) made of back-illuminated CCD's capable of detecting X-rays with excellent quantum efficiency; and a composite Telescope Tube that structurally links the MA and FPA. The MA consists of 5,972 silicon mirror segments mounted into five subassemblies called meta-shells. A meta-shell is constructed from an annular central structural shell covered with interlocking layers of mirror segments. This paper describes the requirements, design, and analysis of the XTA subsystems with particular focus on the MA.

NGXO↗

Net lithium deposition and dominant self-sputtering in lithium tokamak experiment-β with a liquid lithium wall

We observed enhanced net lithium deposition and lithium erosion, possibly dominated by physical sputtering of lithium by lithium-ion bombardment, on the outer plasma-facing surface in the Lithium Tokamak eXperiment-β (LTX-β) during liquid lithium wall operations. Silicon crystal samples with micro-trenches (30 μm × 30 μm × 2–7 μm deep) were exposed to hydrogen plasmas in LTX-β for solid and liquid lithium wall operations. Post-mortem analysis using X-ray photoelectron spectroscopy combined with argon ion sputtering measured net lithium deposition of 8.2 or 21 nm on the silicon crystal surface exposed for ~ 50 repeated shots of ~ 50-ms hydrogen plasma discharges during the liquid lithium wall operations at a vessel temperature of 475 K. Energy dispersive X-ray spectroscopy measured oxygen concentration patterns on the micro-trench floors, which were due to oxidized lithium deposition. Using the inhomogeneous oxygen concentration pattern caused by an ion-shadowing effect associated with the micro-trench’s geometric structure, we determined a polar incident ion direction of 68.4 ± 1.6° referenced to the surface normal direction. This observation was well-explained by the hypothesis that self-sputtering of Li was a dominant lithium erosion source in addition to lithium sputtering by hydrogen bombardment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Overview of the Design, Fabrication and Performance Requirements of Micro-Spec, an Integrated Submillimeter Spectrometer

Micro-Spec is a compact submillimeter (350-700 GHz) spectrometer which uses low loss superconducting niobium microstrip transmission lines and a single-crystal silicon dielectric to integrate all of the components of a grating-analog spectrometer onto a single chip. Here we present details of the fabrication and design of a prototype Micro-Spec spectrometer with resolution, R64, where we use a high-yield single-flip wafer bonding process to realize instrument components on a 0.45 m single-crystal silicon dielectric. We discuss some of the electromagnetic design concerns (such as loss, stray-light, cross-talk, and fabrication tolerances) for each of the spectrometer components and their integration into the instrument as a whole. These components include a slot antenna with a silicon lens for optical coupling, a phase delay transmission line network, parallel plate waveguide interference region, and aluminum microstrip transmission line kinetic inductance detectors with extremely low cross-talk and immunity to stray light. We have demonstrated this prototype spectrometer with design resolution of R64. Given the optical performance of this prototype, we will also discuss the extension of this design to higher resolutions suitable for balloon-flight.

spectrometer↗

u-Spec Spectrometers for the EXCLAIM Instrument

The EXperiment for Cryogenic Large-aperture Intensity Mapping (EXCLAIM) is a cryogenic balloon-borne instrument that will map carbon monoxide and singly-ionized carbon emission lines across redshifts from 0to 3.5, using an intensity mapping approach. EXCLAIM will broaden our understanding of these elemental and molecular gases, and the role they play in star formation processes across cosmic time scales. The focal plane of EXCLAIM’s cryogenic telescope features sixμ-Spec spectrometers.μ-Spec is a compact, integrated grating-analog spectrometer, which uses meandered superconducting niobium microstrip transmission lines on a single-crystal silicon dielectric to synthesize the grating. It features superconducting aluminum microwave kinetic inductance detectors (MKIDs), also in a microstrip architecture. The spectrometers for EXCLAIM couple to the telescope optics via a hybrid planar antenna coupled to a silicon lenslet. The spectrometers operate from420−540 GHz with a resolving power R=λ/∆λ= 512, and employ an array of 355 MKIDs on each spectrometer. The spectrometer design targets a noise equivalent power (NEP) of 2×10−18W/√Hz (defined at the input to the main lobe of the spectrometer lenslet beam, within a 9◦half width), enabled by the cryogenic telescope environment, the sensitive MKID detectors, and the low dielectric loss of single-crystal silicon. We report on these spectrometers under development for EXCLAIM, providing an overview of the spectrometer and component designs, the spectrometer fabrication process, fabrication developments since previous prototype demonstrations, and the current status of their development for the EXCLAIM mission.

EXCLAIM Instrument↗

Practical aspects of silicon float zone crystal growth

The float zone (FZ) growth method for silicon crystallization has advantages and disadvantages when compared to the other principal growth method, the Czochralski (CZ) technique. CZ growth is attractive for the following reasons: large diameters, high single crystal yields, low thermal gradients, low operator skill requirements, efficient power utilization, and low feed material costs. Some areas where FZ growth is advantageous include high purity, axial resistivity uniformity (on a macroscale), visibility of the growth region, low consumable material costs, and high growth rates.

Ciszek, T. T.↗