Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SiO2”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9

Synthesis of Sol-Gel Precursors for Ceramics from Lunar and Martian Soil Simulars

Recent NASA mission plans for the human exploration of our Solar System has set new priorities for research and development of technologies necessary to enable a long-term human presence on the Moon and Mars. The recovery and processing of metals and oxides from mineral sources on other planets is under study to enable use of ceramics, glasses and metals by explorer outposts. We report initial results on the production of sol-gel precursors for ceramic products using mineral resources available in martian or lunar soil. The presence of SiO2, TiO2, and Al2O3 in both martian (44 wt.% SiO2, 1 wt.% TiO2,7 wt.% Al2O3) and lunar (48 wt.% SiO2, 1.5 wt.% TiO2, 16 wt.% Al2O3) soils and the recent developments in chemical processes to solubilize silicates using organic reagents and relatively little energy indicate that such an endeavor is possible. In order to eliminate the risks involved in the use of hydrofluoric acid to dissolve silicates, two distinct chemical routes are investigated to obtain soluble silicon oxide precursors from lunar and martian soil simulars. Clear solutions of sol-gel precursors have been obtained by dissolution of silica from lunar soil simular in basic ethylene glycol (C2H4(OH)2) solutions to form silicon glycolates. Similarly, sol-gel solutions produced from martian soil simulars reveal higher contents of iron oxides. The elemental composition and structure of the precursor molecules were characterized. Further concentration and hydrolysis of the products was performed to obtain gel materials for evaluation as ceramic precursors.

Sibille, L.↗

Radiation Test Results for a MEMS Microshutter Operating at 60 K

The James Webb Space Telescope (JWST), the successor to the Hubble Space Telescope, is due to be launched in 2013 with the goal of searching the very distant Universe for stars that formed shortly after the Big Bang. Because this occurred so far back in time, the available light is strongly red-shifted, requiring the use of detectors sensitive to the infrared portion of the electromagnetic spectrum. HgCdTe infrared focal plane arrays, cooled to below 30 K to minimize noise, will be used to detect the faint signals. One of the instruments on JWST is the Near Infrared Spectrometer (NIRSPEC) designed to measure the infrared spectra of up to 100 separate galaxies simultaneously. A key component in NIRSPEC is a Micro-Electromechanical System (MEMS), a two-dimensional micro-shutter array (MSA) developed by NASA/GSFC. The MSA is inserted in front of the detector to allow only the light from the galaxies of interest to reach the detector and to block the light from all other sources. The MSA will have to operate at 30 K to minimize the amount of thermal radiation emitted by the optical components from reaching the detector array. It will also have to operate in the space radiation environment that is dominated by the MSA will be exposed to a large total ionizing dose of approximately 200 krad(Si). Following exposure to ionizing radiation, a variety of MEMS have exhibited performance degradation. MEMS contain moving parts that are either controlled or sensed by changes in electric fields. Radiation degradation can be expected for those devices where there is an electric field applied across an insulating layer that is part of the sensing or controlling structure. Ionizing radiation will liberate charge (electrons and holes) in the insulating layers, some of which may be trapped within the insulating layer. Trapped charge will partially cancel the externally applied electric field and lead to changes in the operation of the MEMS. This appears to be a general principle for MEMS. Knowledge of the above principle has raised the concern at NASA that the MSA might also exhibit degraded performance because, i) each shutter flap is a multilayer structure consisting of metallic and insulating layers and ii) the movement of the shutter flaps is partially controlled by the application of an electric field between the shutter flap and the substrate (vertical support grid). The whole mission would be compromised if radiation exposure were to prevent the shutters from opening and closing properly. energetic ionizing particles. Because it is located A unique feature of the MSA is that, as outside the spacecraft and has very little shielding, previously mentioned, it will have to operate at temperatures near 30 K. To date, there are no published reports on how very low temperatures (- 30K) affect the response of MEMS devices to total ionizing dose. Experiments on SiO2 structures at low temperatures (80 K) indicate that the electrons generated by the ionizing radiation are mobile and will move rapidly under the application of an external electric field. Holes, on the other hand, that would normally move in the opposite direction through the SiO2 via a "thermal hopping" process, are effectively immobile at low electric fields as they are trapped close to their generation sites. However, for sufficiently large electric fields (greater than 3 MV/cm) holes are able to move through the SiO2. The larger the field, the more rapidly the holes move. The separation of the electrons and holes leads to a reduced electric field within the insulating layer. To overcome this reduction in electric field, a greater external voltage will have to be applied that alters the normal operation of the device. This report presents the results of radiation testing of the MSA at 60 K. The temperature was higher than the targeted temperature because of a faulty electrical interconnect on the test board. Specifically, our goal was to determine whether the MSA would function propey after a TID of 200 krad(Si).

Rapchun, David A.↗

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗

Allophane on Mars: Significance for Chemical Weathering and Soil Development

It has been suggested that allophane or related poorly crystalline aluminosilicates are present on Mars, and that they comprise the high-silica phase detected by the Thermal Emission Spectrometer (TES) in Surface Type 2 materials (Michalski et al., 2005). Using new laboratory spectra of allophanic materials, we (Rampe et al., this meeting) have detected allophane on the Martian surface via spectral modeling of TES data. We find that ST2 materials in the Northern Plains are consistent with a significant amount of high-silica allophane-like materials. In addition, we find that allophane may be present in some areas of ancient highlands (TES surface type 1), but spectra of those regions are more consistent with aluminous allophane. The presence of allophane and its chemical variability have important implications for chemical weathering and soil development on Mars. Allophane-like materials are amorphous or poorly crystalline hydrous aluminosilicates formed from chemical weathering of glasses, feldspars, and other silicates (cf. Parfitt, 2009). True allophane is a combination of SiO2, Al2O3 and H2O where Al:Si ranges from ~0.5-2. Aluminosilicate gels are amorphous and chemically similar to allophane but can have higher SiO2 contents. The presence of allophane indicates low-temperature chemical weathering and provides constraints on alteration conditions, limiting pH to circum-neutral (~4.5-8). Our model results indicate that weathering occurred in the relatively young northern plains of Mars. The high-silica allophane-like material present there implies little silica mobility through the soil column, which suggests that weathering involved small amounts of liquid water, consistent with our previous models of weathering in ice-rich soils (Kraft et al., 2007). The aluminous allophane indicated by our spectral models to be present in the highlands suggest that those regions experienced greater amounts of SiO2 leaching and weathering in those soils may have involved much larger amounts of water. The presence of allophane-like materials suggests that these weathering regimes were not influenced by the acidic weathering that appears to have affected other areas of Mars and has been proposed as a planetwide alteration process (Hurowitz and McLennan, 2007). Soil development in basaltic material (typically tephra) on Earth usually leads to formation of andosols. Although we do not suggest a one-to-one analogy between dark basaltic Martian soils and andosols, there may be important similarities, as andosols are typified by significant production of allophane as well as poorly crystalline Fe-hydroxides. The detection of allophane on Mars suggests a positive utility of an andosol model for Martian soils, particularly when coupled with the ubiquitous presence of Feoxide materials on Mars. An andosol model of soil formation is mineralogically consistent with palagonite models for the formation of Martian dust (cf. Banin et al., 1992; Morris et al., 2001), which suggests a possible genetic relationship of dust and bright soils to the broader soil layer of Mars.

Kraft, M. D.↗

Growing Aligned Carbon Nanotubes for Interconnections in ICs

A process for growing multiwalled carbon nanotubes anchored at specified locations and aligned along specified directions has been invented. Typically, one would grow a number of the nanotubes oriented perpendicularly to a silicon integrated-circuit (IC) substrate, starting from (and anchored on) patterned catalytic spots on the substrate. Such arrays of perpendicular carbon nanotubes could be used as electrical interconnections between levels of multilevel ICs. The process (see Figure 1) begins with the formation of a layer, a few hundred nanometers thick, of a compatible electrically insulating material (e.g., SiO(x) or Si(y)N(z) on the silicon substrate. A patterned film of a suitable electrical conductor (Al, Mo, Cr, Ti, Ta, Pt, Ir, or doped Si), having a thickness between 1 nm and 2 m, is deposited on the insulating layer to form the IC conductor pattern. Next, a catalytic material (usually, Ni, Fe, or Co) is deposited to a thickness between 1 and 30 nm on the spots from which it is desired to grow carbon nanotubes. The carbon nanotubes are grown by plasma-enhanced chemical vapor deposition (PECVD). Unlike the matted and tangled carbon nanotubes grown by thermal CVD, the carbon nanotubes grown by PECVD are perpendicular and freestanding because an electric field perpendicular to the substrate is used in PECVD. Next, the free space between the carbon nanotubes is filled with SiO2 by means of CVD from tetraethylorthosilicate (TEOS), thereby forming an array of carbon nanotubes embedded in SiO2. Chemical mechanical polishing (CMP) is then performed to remove excess SiO2 and form a flat-top surface in which the outer ends of the carbon nanotubes are exposed. Optionally, depending on the application, metal lines to connect selected ends of carbon nanotubes may be deposited on the top surface. The top part of Figure 2 is a scanning electron micrograph (SEM) of carbon nanotubes grown, as described above, on catalytic spots of about 100 nm diameter patterned by electron-beam lithography. These and other nanotubes were found to have lengths ranging from 2 to 10 m and diameters ranging from 30 to 200 nm, the exact values of length depending on growth times and conditions and the exact values of diameter depending on the diameters and thicknesses of the catalyst spots. The bottom part of Figure 2 is an SEM of an embedded array of carbon nanotubes after CMP.

Li, Jun↗

Hysteresis in the Active Oxidation of SiC

Si and SiC show both passive oxidation behavior where a protective film of SiO2 forms and active oxidation behavior where a volatile suboxide SiO(g) forms. The active-to-passive and passive-to-active oxidation transitions are explored for both Si and SiC. Si shows a dramatic difference between the P(O2) for the two transitions of ~10-4 bar. The active-to-passive transition is controlled by the condition for SiO2/Si equilibrium and the passive-to-active transition is controlled by the decomposition of SiO2. In the case of SiC, the P(O2) for these transitions are much closer. The active-to-passive transition appears to be controlled by the condition for SiO2/SiC equilibrium. The passive-to-active transition appears to be controlled by the interfacial reaction of SiC and SiO2 and subsequent generation of gases at the interface which leads to scale breakdown.

Jacobson, Nathan S.↗

What's on the Surface? Physics and Chemistry of Delta-Doped Surfaces

Outline of presentation: 1. Detector surfaces and the problem of stability 2. Delta-doped detectors 3. Physics of Delta-doped Silicon 4. Chemistry of the Si-SiO2 Interface 5. Physics and Chemistry of Delta-doped Surfaces a. Compensation b. Inversion c. Quantum exclusion. Conclusions: 1. Quantum confinement of electrons and holes dominates the behavior of delta-doped surfaces. 2. Stability of delta-doped detectors: Delta-layer creates an approx 1 eV tunnel barrier between bulk and surface. 3. At high surface charge densities, Tamm-Shockley states form at the surface. 4. Surface passivation by quantum exclusion: Near-surface delta-layer suppresses T-S trapping of minority carriers. 5. The Si-SiO2 interface compensates the surface 6. For delta-layers at intermediate depth, surface inversion layer forms 7. Density of Si-SiO2 interface charge can be extremely high (>10(exp 14)/sq cm)

detectors↗

Acid Sulfate Alteration in Gusev Crater, Mars

The Mars Exploration Rover (MER) Spirit landed on the Gusev Crater plains west of the Columbia Hills in January, 2004, during the Martian summer (sol 0; sol = 1 Martian day = 24 hr 40 min). Spirit explored the Columbia Hills of Gusev Crater in the vicinity of Home Plate at the onset on its second winter (sol approximately 900) until the onset of its fourth winter (sol approximately 2170). At that time, Spirit became mired in a deposit of fined-grained and sulfate-rich soil with dust-covered solar panels and unfavorable pointing of the solar arrays toward the sun. Spirit has not communicated with the Earth since sol 2210 (January, 2011). Like its twin rover Opportunity, which landed on the opposite side of Mars at Meridiani Planum, Spirit has an Alpha Particle X-Ray Spectrometer (APXS) instrument for chemical analyses and a Moessbauer spectrometer (MB) for measurement of iron redox state, mineralogical speciation, and quantitative distribution among oxidation (Fe(3+)/sigma Fe) and coordination (octahedral versus tetrahedral) states and mineralogical speciation (e.g., olivine, pyroxene, ilmenite, carbonate, and sulfate). The concentration of SO3 in Gusev rocks and soils varies from approximately 1 to approximately 34 wt%. Because the APXS instrument does not detect low atomic number elements (e.g., H and C), major-element oxide concentrations are normalized to sum to 100 wt%, i.e., contributions of H2O, CO2, NO2, etc. to the bulk composition care not considered. The majority of Gusev samples have approximately 6 plus or minus 5 wt% SO3, but there is a group of samples with high SO3 concentrations (approximately 30 wt%) and high total iron concentrations (approximately 20 wt%). There is also a group with low total Fe and SO3 concentrations that is also characterized by high SiO2 concentrations (greater than 70 wt%). The trend labeled "Basaltic Soil" is interpreted as mixtures in variable proportions between unaltered igneous material and oxidized and SO3-rich basaltic dust. The Moessbauer parameters are not definitive for mineralogical speciation (other than octahedrally-coordinated Fe(3+) but are consistent with a schwertmannite-like phase (i.e., a nanophase ferric oxide). The high oxidation state and values of Moessbauer parameters (center shift and quadrupole splitting) for the high-SO3 samples imply ferric sulfate (i.e., oxidized sulfur), although the hydration state cannot be constrained. In no case is there an excess of SO3 over available cations (i.e., no evidence for elemental sulfur), and Fe sulfide (pyrite) has been detected in only one Gusev sample. The presence of both high-SiO2 (and low total iron and SO3) and high SO3 (and high total iron as ferric sulfate) can be accommodated by a two-step geochemical model developed with the Geochemist's Workbench. (1) Step 1 is anoxic acid sulfate leaching of Martian basalt at high water-to rock ratios (greater than 70). The result is a high-SiO2 residue0, and anoxic conditions are required to solubilize Fe as Fe(2+). (2) Step 2 is the oxic precipitation of sulfate salts from the leachate. Oxic conditions are required to produce the high concentrations of ferric sulfate with minor Mg-sulfates and no detectable Fe(2+)-sulfates.

Morris, R. V.↗

MSL SAM-Like Evolved Gas Analyses of Si-rich Amorphous Materials

Chemical and mineralogical analyses of several samples from Murray Formation mudstones and Stimson Formation sandstones by the Mars Science Laboratory (MSL) revealed the presence of Si-rich amorphous or poorly ordered materials. It is possible to identify the presence of high-SiO2 vs. lower SiO2 amorphous materials (e.g., basaltic glasses), based on the position of the resulting wide diffraction features in XRD patterns from the Chemistry and Mineralogy (CheMin) instrument, but it is not possible to distinguish between several candidate high-SiO2 amorphous materials such as opal-A or rhyolitic glass. In the Buckskin (BS) sample from the upper Murray Formation, and the Big Sky (BY) and Greenhorn (GH) samples from the Stimson Formation, analyses by the Sample Analysis at Mars (SAM) instrument showed very broad H2O evolutions during sample heating at temperatures >450-500degC which had not been observed from previous samples. BS also had a significant broad evolution <450-500degC. We have undertaken a laboratory study targeted at understanding if the data from SAM can be used to place constraints on the nature of the amorphous phases. SAM-like evolved gas analyses have been performed on several opal and rhyolitic glass samples. Opal-A samples exhibited wide <500degC H2O evolutions, with lesser H2O evolved above ~500degC. H2O evolution traces from rhyolitic glasses varied, having either two broad H2O peaks, <300degC and >500degC, or a broad peak centered around 400degC. For samples that produced two evolutions, the lower temperature peak is more intense than the higher temperature peak, a trend also exhibited by opal-A. This trend is consistent with data from BS, but does not seem consistent with data from BY and GH which evolved most of their H2O >500degC. It may be that dehydration of opal-A and/or rhyolitic glass can result in some preferential loss of lower temperature H2O, to produce traces that more closely resemble BY and GH. This is currently under investigation and results will be reported.

McAdam, Amy↗

Solid State Ultracapacitor

An ink of the formula: 60-80% by weight BaTiO3 particles coated with SiO2; 5-50% by weight high dielectric constant glass; 0.1-5% by weight surfactant; 5-25% by weight solvent; and 5-25% weight organic vehicle. Also a method of manufacturing a capacitor comprising the steps of: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; incorporating them into the above described ink formulation; depositing the ink on a substrate; and heating at 850-900 C for less than 5 minutes and allowing the ink and substrate to cool to ambient in N2 atmosphere. Also a dielectric made by: heating particles of BaTiO3 for a special heating cycle, under a mixture of 70-96% by volume N2 and 4-30% by volume H2 gas; depositing a film of SiO2 over the particles; mechanically separating the particles; forming them into a layer; and heating at 850-900 C for less than 5 minutes and allowing the layer to cool to ambient in N2 atmosphere.

Rolin, Terry D.↗

Degradation of Intercalated Graphite Epoxy Composites Exposed to Low Earth Orbit

Four different graphite fiber/epoxy composites were exposed to the wake-side low Earth orbit (LEO) environment on the Optical Reflector Materials Experiment III (ORMatE-III) platform mounted on the exterior of the ISS for two years in order to determine their long term durability in the space environment. Three of the composite samples used bromine intercalated P100 fibers and one used pristine P100 fibers. One of the P100-Br samples was coated with a protective SiO2 layer, and half of another was coated with SiO2. Results were compared with the EOIM-III experiment which exposed the same materials in LEO in the ram direction for 42 h on the Space Shuttle. Although the atomic oxygen (AO) fluence of the ORMatE-III samples was one-third of the EOIM-III exposure, the resulting effects were qualitatively the same. Both found that SiO2 coated intercalated graphite composites showed no AO erosion, verifying that conventional protection strategies are applicable to bromine intercalated composites. Both found that bromine intercalation does not alter the AO erosion rates of graphite fiber/epoxy composites. Both found no bromine was detected to have migrated into the surrounding epoxy, even for highly eroded fibers and epoxy, allaying fears that bromination could compromise the properties of the epoxy. And both found no corrosive bromine was detected to have been released by the fibers allaying fears that outgassing could degrade sensitive electronics. The uncoated EOIM-III samples suffered slightly greater erosion resulting in a slightly higher solar absorptance. The general conclusion is that ram AO exposure had very similar effects on graphite fiber epoxy composites in both the EOIM-III and ORMatE-III experiments, and in neither case did bromine intercalation of the fibers substantially influence that degradation.

Intercalated graphite↗

Composition of island arcs and continental growth.

Island arc volcanism has contributed and is still contributing to continental growth, but the composition of island arcs differs from that of the upper continental crust in its lower abundance of Si, K, Rb, Ba, Sr and light rare earth elements. In their advanced stage of evolution, island arcs contain more than 80% of tholeiitic and 15% of ?island arc' calc-alkaline rocks with varied SiO2 contents. The larger proportion of tholeiitic rocks is in the lower crustal levels. The high stratigraphical levels of the island arcs are composed of tholeiitic plus calc-alkaline and/or high potash (shoshonitic) associations with higher abundances of K, Rb, Sr, and Ba. Stratification of the island arc crust is accentuated by another type of calc-alkaline volcanism (Andean type) originating at a late stage of arc evolution, probably by partial melting at the base of the crust. This causes enrichment of the upper crust in K, Rb, Ba and REE and accounts for upper crustal abundances of these elements as well as of SiO2.

Jakes, P.↗

Analysis of the ultrafine fraction of the Apollo 14 regolith

Analyses were obtained on more than 2400 randomly selected particles from the sub-37 micron (ultrafine) fraction of ten Apollo 14 regolith samples. The analyses were conducted with an energy dispersive electron microprobe system. The semiquantitative data were used to group the particles into ten categories. The pyroxene/plagioclase and olivine/plagioclase ratios are inconsistent with those ratios in the Apollo 14 breccias and rocks. The data suggest that fragmented basalts similar to Apollo 12 olivine basalts may have made significant contributions to the ultrafine fraction of the Fra Mauro regolith. Among a number of unusual particles encountered are brown, birefringent lath-shaped grains with 60 wt % SiO2 and 34 wt % FeO(FeSi2O5) and a glass with 20 to 25 wt % CaO, 0 to 8 wt % MgO, 40 to 45 wt % Al2O3 and approximately 30 wt % SiO2.

Finkelman, R. B.↗

Descartes Mountains and Cayley Plains - Composition and provenance

Trace element compositions of petrographically characterized 2-4 mm lithic fragments from Apollo 16 soil samples are used to calculate initial REE concentrations in liquids in equilibrium with lunar anorthosites and to discuss the provenance of the Cayley Formation. Lithic fragments may be subdivided into four groups: (1) ANT rocks, (2) K- and SiO2-rich mesostasis-bearing rocks, (3) poikiloblastic rocks, and (4) (spinel) troctolites. Model liquids in equilibrium with essentially monominerallic anorthosites have initial REE concentrations 5-8 times those of chondrites. The REE contents of K- and SiO2-rich mesostasis-bearing rocks and poikiloblastic rocks are dominated by the mesostasis phases. ANT rocks appear to be more abundant in the Descartes Mountains, while poikiloblastic rocks appear to be more abundant in the Cayley Plains. Poikiloblastic rocks have intermediate to high LIL-element concentrations yet the low gamma-ray activity of Mare Orientale implies low LIL-element concentrations. Consequently, it is unlikely that the Cayley Formation is Orientale ejecta. A local origin as ejecta from smaller impacts is a more plausible model for the deposition of the Cayley Formation.

Drake, M. J.↗

Magnetoresistance and noise properties of chevron stretcher detectors for field access bubble domain devices

Experiments were devised to study the angular variation of the resistance and noise properties of one- and two-level chevron stretcher magnetoresistive detectors for use in field access bubble memory devices. All measurements, made with an electronic system, were performed on glass or garnet samples upon which 1 micron of SiO2 was sputter-deposited, followed by 4000 A of Permalloy for the 28-micron-period devices and 0.8 microns of SiO2, followed by 3000 A of Permalloy for the 20-micron-period devices. The geometrical and drive-state dependence of the zero-state noise were studied, as was its frequency dependence. It is found that both types of detectors operate primarily in the amplitude-shift mode for drive fields of interest and that the presence of a bubble in a detector causes a magnetoresistance change equal to that produced by increasing the in-plane drive field about 8 Oe in the absence of a bubble.

George, P. K.↗

Determination of the pure silicon monocarbide content of silicon carbide and products based on silicon carbide

Experience has shown that different methods of analysis of SiC products give different results. Methods identified as AFNOR, FEPA, and manufacturer P, currently used to detect SiC, free C, free Si, free Fe, and SiO2 are reviewed. The AFNOR method gives lower SiC content, attributed to destruction of SiC by grinding. Two products sent to independent labs for analysis by the AFNOR and FEPA methods showed somewhat different results, especially for SiC, SiO2, and Al2O3 content, whereas an X-ray analysis showed a SiC content approximately 10 points lower than by chemical methods.

Prost, L.↗

Pressureless sintered beta prime-Si3N4 solid solution: Fabrication, microstructure, and strength

Si3N4, AlN, and Al2O3 were used as basic constituents in a study of the pressureless sintering of beta prime-Si3N4 solid solution as a function of temperature. Y2O3-SiO2 additions were used to promote liquid-phase sintering. The sintered specimens were characterized with respect to density, microstructure, strength, oxidation, and thermal shock resistance. Density greater than 98 percent of theoretical was achieved by pressureless sintering at 1750 C. The microstructure consisted essentially of fine-grained beta prime-Si3N4 solid solution as the major phase. Modulus of rupture strengths up to 483 MPa were achieved at moderate temperature (1000 C), but decreased to 228 MPa at 1380 C. This substantial strength loss was attributed to a glassy grain boundary phase formed during cooling from the sintering temperature. The best oxidation resistance was exhibited by a composition containing 3 mol % Y2O3-SiO2 additives. Water quench thermal shock resistance was equivalent to that of reaction sintered silicon nitride but lower than hot-pressed silicon nitride.

Dutta, S.↗

Annual Conference on Nuclear and Space Radiation Effects, 14th, College of William and Mary, Williamsburg, Va., July 12-15, 1977, Proceedings

Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.

Stahl, R. H.↗