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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Interstellar SiC in the Murchison and Murray meteorites - Isotopic composition of Ne, Xe, Si, C, and N

Detailed ion-probe data are reported on Murchison and Murray C2 chondrites, along with noble-gas data on Murchison, with the purpose of characterizing the number and isotopic composition of independent SiC components and to link them to their stellar sources. Results show that coarse-grained and fine-grained SiC (totaling about 6-9 ppm of the two meteorites) contains record concentrations of two exotic components: Ne-E(H) (nearly monoisotopic Ne-22) and Se-S (enriched in isotopes 128, 130, and 132), respectively. The Ne-21 content was found to exceed up to 40-fold the content expected from the recent cosmic-ray irradiation, implying a presolar cosmic-ray exposure age of about 39 Ma. This age is much shorter that the predicted 500 Ma lifetime of refractory interstellar grains and implies either a selective interstellar destruction process for SiC, enhanced supernova activity in the protosolar neighborhood, or late outgassing of greater than 90 percent of the SiC.

Zinner, Ernst↗
NASA NTRS1990

Deep-level dominated electrical characteristics of Au contacts on beta-SiC

Electrical characteristics of Au contacts on beta-SiC films, grown epitaxially on both nominal and off-axis (100) silicon substrates, are reported. An analysis of the logarithmic I-V plots of the Au/beta-SiC diodes revealed information pertaining to the deep states present in the materials. It was found that while the beta-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located between 0.26 and 0.38 eV below the conduction bandedge, the beta-SiC films deposited on off-axis substrates have only one deep level, located about 0.49 eV below the conduction bandedge for the 2-deg off (100) substrates and 0.57 eV for the 4-deg off (100) substrates. The presence of the shallower deep states in the beta-SiC films grown on nominal (100) substrates is attributed to the electrical activity of antiphase domain boundaries.

Das, K.↗
NASA NTRS1990

Reactions of SiC with H2/H2O/Ar mixtures at 1300 C

Thermochemical modeling anticipates the existence of three reaction regions for the case of a sintered alpha-SiC with 5 percent H2/H2O/Ar at 1300 C, depending on the initial water vapor or, equivalently, oxygen, content of the gas stream. While a high oxygen content leads to SiC-protecting SiO2 surface film formation and limits consumption of the SiC through passive oxidation, intermediate oxygen contents lead to SiO and CO formation and rapid SiC consumption. In this intermediate region, reaction rates appear to be controlled by H2O gas-phase transport to the sample; reacted microstructures exhibit extensive grain-boundary attack in this region. Very low oxygen content is predicted to selectively remove carbon, with free silicon formation.

Jacobson, Nathan S.↗
NASA NTRS1991

Chemical compatibility issues related to use of copper as an interfacial layer for SiC fiber reinforced Ti3Ai+Nb composite

The reaction of Cu, a potential interfacial compliant layer for the Ti3Al plus Nb/SiC composite, with SiC, SCS-6 fiber, and the Ti3Al plus Nb matrix was examined at two temperatures: 1223 and 1273 K. Reaction of Cu with SiC resulted in the formation of a CuSi solution and free carbon, the reaction product being molten at 1273 K. Hot pressing the SCS-6 fiber in a Cu matrix at 1273 K resulted in cracking and delamination of the outer carbon-rich coating, thus allowing the Cu to penetrate to the SiC-carbon coating interface and react with SiC. In contrast, no such damage to the outer coating was observed at 1223 K. There was excessive reaction between Cu and the Ti3Al plus Nb matrix, the reaction product being molten both at 1223 and 1273 K. An interlayer of Nb between Cu and Ti3Al plus Nb matrix prevented the reaction between the two.

Misra, Ajay K.↗
NASA NTRS1991

Application of Oxidation to the Structural Characterization of Sic Epitaxial Films

Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. It is found that oxidation can be a powerful diagnostic process for (1) 'color mapping' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films.

Powell, J. A.↗
NASA NTRS1991

High-voltage 6H-SiC p-n junction diodes

A chemical vapor deposition (CVD) process has been used to produce device structures of n- and p-type 6H-SiC epitaxial layers on commercially produced single-crystal 6H-SiC wafers. Mesa-style p-n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H-SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 C. To observe avalanche breakdown of the p-n junction diodes, testing under a high-electrical-strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD-grown SiC diode.

Matus, L. G.↗
NASA NTRS1991

Processing and properties of SiC whisker- and particulate-reinforced reaction bonded Si3N4

The microstructure and mechanical properties of reaction bonded Si3N4 (RBSN) reinforced with SiC whiskers of particles were investigated using RBSN composites made from colloidally pressed octanol dispersions of high-purity Si powders mixed with either SiC whiskers or alpha-SiC particles. Results of investigations, revealing high conversions of Si to Si3N4, specific surface areas, and constant relative densities and strengths, showed that the uniform microstructure and small flaw size of the matrix were maintained in the composites and that no degradation of the reinforcements was taking place. Neither the monolithic nor the composite materials exhibited R-curve behavior. A modest increase in fracture toughness was observed only in the RBSN containing 33 vol pct SiC(p).

Lightfoot, A.↗
NASA NTRS1991

s-process Ba, Nd, and Sm in presolar SiC from the Murchison meteorite

Ion microprobe isotopic measurements of Ba, Nd, and Sm in the K-series SiC size separates on which noble gas measurements were made by Lewis et al. (1990) are reported. All elements show isotopic abundance patterns characteristic for the s-process. The Ba-134/Ba-136 ratios are distinct from solar, indicating that s-Ba in SiC is different from that in the solar system. Ba-138/Ba-136 ratios decrease with grain size; if interpreted as being due to different neutron exposures, this trend is opposite of that shown by the Kr-86/Kr-82 ratios. Although other isotropic ratios for Ba and those for Nd and Sm differ in detail from theoretical predictions, the disagreements probably being due to uncertainties in the n-capture cross sections and simplifications in the models, the general agreement of the data with models of s-process nucleosynthesis support an AGB star origin for the relatively fine-grain SiC under consideration. Ba-136 in SiC is up to 85 percent pure s-process.

Zinner, Ernst↗
NASA NTRS1992

SiC device development for high temperature sensor applications

Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

Shor, J. S.↗
NASA NTRS1993

Presolar SiC in chondrites - How variable and how many sources?

The carbon and silicon isotropic compositions of 246 isotopically anomalous SiC grains measured in low concentration residues are reported. The residues were prepared from nine chondrites, namely, 6 unequilibrated ordinary chondrites (UOCs), Qingzhen (EH3), Leoville (CV3), and Murchison (CM2). Murchison is used as a standard to which all the other meteorites studied are compared. The range of isotopic compositions exhibited by UOC SiC is found to be similar to Murchison, except in Inman. Inman SiC has a distinctly different distribution of its silicon isotopic composition compared to the other meteorites. Residues from Qingzhen and Leoville produce only one anomalous SiC grain each.

Alexander, C. M. O'D.↗
NASA NTRS1995

Microstructural and strength stability of a developmental CVD SiC fiber

The effects of thermal exposure on the room temperature tensile strength and microstructure of a developmental 50 micron CVD SiC fiber have been studied. The fibers were heat treated between 600 and 2000 C in 0.1 MPa argon and air environments for up to 100 hr. In the as-fabricated condition, the fibers showed approximately 6 GPa tensile strength. After argon treatment, the fibers showed strength degradation after 1 hr exposure beyond 1000 C, but those exposed between 1600 and 2000 C retained approximately 2 GPa strength. TEM results showed microstructural changes both in the surface coating and SiC sheath. Flaws created by the rearrangement of carbon in the surface coating and growth of equiaxed SiC grain zone in the SiC sheath are the suggested mechanisms of strength degradation. After air treatment, fibers showed strength degradation after only 2 min exposure at 600 C. Strength retention after 2 min at 1500 C was approximately 2 GPa. Oxidation of the surface coating is the primary reason for strength degradation.

Bhatt, Ramakrishna T.↗
NASA NTRS1997

SiC Recession Due to SiO2 Scale Volatility Under Combustor Conditions

One of today's most important and challenging technological problems is the development of advanced materials and processes required to design and build a fleet of supersonic High Speed Civil Transport (HSCT) airliners, a follow-up to the Concorde SST. The innovative combustor designs required for HSCT engines will need high-temperature materials with long-term environmental stability. Higher combustor liner temperatures than today's engines and the need for lightweight materials will require the use of advanced ceramic-matrix composites (CMC's) in hot-section components. The HSCT is just one example being used to demonstrate the need for such materials. This thesis evaluates silicon carbide (SiC) as a potential base material for HSCT and other similar applications. Key issues are the environmental durability for the materials of interest. One of the leading combustor design schemes leads to an environment which will contain both oxidizing and reducing gas mixtures. The concern is that these environments may affect the stability of the silica (SiO2) scale on which SiC depends for environmental protection. A unique High Pressure Burner Rig (HPBR) was developed to simulate the combustor conditions of future gas turbine engines, and a series of tests were conducted on commercially available SiC material. These tests are intended as a feasibility study for the use of these materials in applications such as the HSCT. Linear weight loss and surface recession of the SiC is observed as a result of SiO2 volatility for both fuel-lean and fuel-rich gas mixtures. These observations are compared and agree well with thermogravimetric analysis (TGA) experiments. A strong Arrhenius-type temperature dependence exists. In addition, the secondary dependencies of pressure and gas velocity are defined. As a result, a model is developed to enable extrapolation to points outside the experimental space of the burner rig, and in particular, to potential gas turbine engine conditions.

Robinson, Raymond Craig↗
NASA NTRS1997

Creep and Rupture Strength of an Advanced CVD SiC Fiber

In the as-produced condition the room temperature strength (approx. 6 GPa) of Textron Specialty Materials' 50 microns CVD SiC fiber represents the highest value thus far obtained for commercially produced polycrystalline SiC fibers. To understand whether this strength can be maintained after composite processing conditions, high temperature studies were performed on the effects of time, stress, and environment on 1400 deg. C tensile creep strain and stress rupture on as-produced, chemically vapor deposited SiC fibers. Creep strain results were consistent, allowing an evaluation of time and stress effects. Test environment had no influence on creep strain but I hour annealing at 1600 deg. C in argon gas significantly reduced the total creep strain and increased the stress dependence. This is attributed to changes in the free carbon morphology and its distribution within the CVD SiC fiber. For the as-produced and annealed fibers, strength at 1400 deg. C was found to decrease from a fast fracture value of 2 GPa to a 100-hr rupture strength value of 0. 8 GPa. In addition a loss of fast fracture strength from 6 GPa is attributed to thermally induced changes in the outer carbon coating and microstructure. Scatter in rupture times made a definitive analysis of environmental and annealing effects on creep strength difficult.

Goldsby, J. C.↗
NASA NTRS1997

Paralinear Oxidation of CVD SiC in Water Vapor

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Opila, Elizabeth J.↗
NASA NTRS1997

Effect of Crystal Defects on Minority Carrier Diffusion Length in 6H SiC Measured Using the Electron Beam Induced Current Method

We report values of minority carrier diffusion length in n-type 6H SiC measured using a planar Electron Beam Induced Current (EBIC) method. Values of hole diffusion length in defect free regions of n-type 6H SiC, with a doping concentration of 1.7El7 1/cu cm, ranged from 1.46 microns to 0.68 microns. We next introduce a novel variation of the planar method used above. This 'planar mapping' technique measured diffusion length along a linescan creating a map of diffusion length versus position. This map is then overlaid onto the EBIC image of the corresponding linescan, allowing direct visualization of the effect of defects on minority carrier diffusion length. Measurements of the above n-type 6H SiC resulted in values of hole diffusion length ranging from 1.2 micron in defect free regions to below 0.1 gm at the center of large defects. In addition, measurements on p-type 6H SiC resulted in electron diffusion lengths ranging from 1.42 micron to 0.8 micron.

Tabib-Azar, Massood↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS2000

Finite-Element Modeling of 3C-SiC Membranes

Finite-element modeling (FEM) of 3C-SiC thin-film membranes on Si substrates was used to determine the residual stress and center deflection with applied pressure. The anisotropic, three-dimensional model includes the entire 3C-SiC membrane and Si substrate with appropriate material properties and boundary conditions. Residual stress due to the thermal-expansion-coefficient mismatch between the3C-SiC film and Si substrate was included in the model. Both before-and after-etching, residual stresses were calculated. In-plane membrane stress and normal deflection with applied pressure were also calculated. FEM results predict a tensile residual stress fo 259 MPa in the 3C-SiC membrane before etching. This decreases to 247 MPa after etching the substrate below the membrane. The residual stress experimentally measured on sample made at Case Western Reserve University was 280 MPa on post-etched membranes. This is excellent agreement when an additional 30-40 MPa of residual stress to account for lattice mismatch is added to the FEM results.

DeAnna, R. G.↗
NASA NTRS2001

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Joshi, R. P.↗