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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Enhancement of radiation detection performance with reduction of EH 6/7 deep levels in n-type 4H–SiC through thermal oxidation

We report the effect of EH 6/7 electron trap centers alone on the performance of high-resolution radiation detectors fabricated on n-type 4H–SiC epitaxial layers. A Schottky barrier detector (SBD) and a metal-oxide-semiconductor (MOS) capacitor detector fabricated using two sister samples derived from the same 50 μm 4H–SiC parent wafer exhibited widely different energy resolutions of 0.4% and 0.9% for 5486 keV alpha particles. An equivalent noise charge model analysis ruled out the effect of the detector capacitance and the leakage current on the resolution of the detectors. Deep level transient spectroscopic studies revealed the presence of two trapping centers in each detector within the temperature scan range 240–800 K. The Z 1/2 center, a potential electron trap, was detected in both the detectors in equal concentration, which suggested that the observed difference in the energy resolution is due to the presence of the other defect, the EH 6/7 center, in the SBD. The capture cross section of the EH 6/7 center was calculated to be three orders of magnitude higher than the second defect [a carbon antisite vacancy (CAV) center] observed in the MOS detector with an activation energy of 1.10 eV, which accounted for the enhanced electronic trapping in the SBD leading to its poor energy resolution. It has been proposed that the EH 6/7 centers in the SBD have likely been reconfigured to CAV pairs during the thermal growth of the silicon dioxide layer in the MOS detector. The proposed formation mechanism of CAV, a stable qubit state for quantum information processing, addresses the outstanding questions related to the role of defect dynamics in their formation.

61 RADIATION PROTECTION AND DOSIMETRY↗
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
DOE OSTI2025

Performance characterization of 5×5×12 mm 3 virtual Frisch-grid TlBr detectors

Thallium bromide (TlBr) is a promising material for semiconductor gamma-ray detectors due to its high atomic number (Tl = 81, Br = 35), high density (7.56 g/cm 3 ), and relatively low melting point (460 °C). These properties give TlBr several competitive features, including high detection efficiency, good energy resolution, and lower fabrication costs, making it suitable for applications requiring compact, highly sensitive gamma-ray detection systems. Recent developments of TlBr detectors have progressed toward thicker crystals, up to 10–20 mm, configured as pixelated or virtual Frisch-grid (VFG) devices with volumes >1 cm 3 . Despite these advances, challenges remain in practical implementation, including material and fabrication issues that affect energy resolution, device stability, performance, and longevity. These challenges are similar to those faced by HgI 2 and lead-halide perovskite detectors. Here, this study presents results from characterizing over 100 position-sensitive 5×5×12 mm 3 virtual Frisch-grid detectors fabricated by Radiation Monitoring Devices Inc. For a prototype Radioisotope Identification Device (RIID). The work identified factors limiting the performance and longevity of TlBr detectors, including stochastic response variations that limit the energy resolution to 2–3 % (at 662 keV) for most devices, performance degradation associated with defect decoration, and contact delamination. Addressing these issues advances the use of TlBr and similar materials for reliable, high-resolution gamma-ray spectroscopy.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Revisiting the dark matter interpretation of excess rates in semiconductors

In light of recent results from low-threshold dark matter detectors, we revisit the possibility of a common dark matter origin for multiple excesses across numerous direct detection experiments, with a focus on the excess rates in semiconductor detectors. We explore the interpretation of the low-threshold calorimetric excess rates above 40 eV in the silicon SuperCDMS Cryogenic Phonon Detector and above 100 eV in the germanium EDELWEISS Surface detector as arising from a common but unknown origin, and demonstrate a compatible fit for the observed energy spectra in both experiments, which follow a power law of index α = 3.4 3 - 0.06 + 0.11 . Despite the intriguing scaling of the normalization of these two excess rates with approximately the square of the mass number A 2 , we argue that the possibility of common origin by dark matter scattering via nuclear recoils is strongly disfavored, even allowing for exotic condensed matter effects in an as-yet unmeasured kinematic regime, due to the unphysically large dark matter velocity required to give comparable rates in the different energy ranges of the silicon and germanium excesses. We also investigate the possibility of inelastic nuclear scattering by cosmic ray neutrons, solar neutrinos, and photons as the origin, and quantitatively disfavor all three based on known fluxes of particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Doped semiconductor devices for sub-MeV dark matter detection

Dopant atoms in semiconductors can be ionized with ∼ 10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2024

Investigating Gadolinium-Lined Sodium-Iodide Neutron Detectors for Mobile Applications

For enhancing the effectiveness of nonproliferation efforts in neutron detection, most portable instruments rely on 6 Li scintillators, 10 B-based detectors, or gas-filled 3 He proportional counters. Additionally, gamma-ray detectors based on scintillators and semiconductors are often employed for search applications to find radioactive material in the field. These systems typically include dedicated detectors along with separate high voltage supplies and processing electronics for the gamma-ray and neutron detectors. Ideally, a portable radiation detection system should be lightweight, compact, and cost-effective. In the field, scintillators can serve a dual purpose: (1) detecting gamma-rays and (2) detecting neutrons. Gamma-ray detection with scintillators is based on the interaction of gamma-rays within the scintillating material, whereas neutron detection depends indirectly on neutron capture events. These capture events generate conversion electrons and gamma-rays, which can interact with the scintillator. For enhancing neutron capture, the scintillator can be surrounded by neutron absorber materials with a high neutron cross section. The resulting secondary electrons and gamma-rays from neutron interactions, depending on the absorber material used, can then be analyzed to detect the presence of neutron sources. Similarly, semiconductor-based detectors can be employed along with neutron absorbers as liners for neutron detection. 158 Gd has a significantly larger neutron cross section than 3 He, commonly used in gas-filled proportional counters, as shown in Figure 1. For thermal (0.025 eV) neutrons, the absorption cross section of 158 Gd is 10,000 times greater than that of 3 He (refer to Figure 1). This feature makes naturally occurring gadolinium, which consists of 24.8% 158 Gd, a promising neutron absorber material for use in combination with gamma-ray detectors–yielding a hybrid detector–for neutron detection.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
NASA NTRS1993

Proposal for a Universal Particle Detector Experiment

The Universal Particle Detector Experiment (UPDE), which consists of parallel planes of two diode laser beams of different wavelengths and a large surface metal oxide semiconductor (MOS) impact detector, is proposed. It will be used to perform real-time monitoring of contamination particles and meteoroids impacting the spacecraft surface with high resolution of time, position, direction, and velocity. The UPDE will discriminate between contaminants and meteoroids, and will determine their velocity and size distribution around the spacecraft environment. With two different color diode lasers, the contaminant and meteroid composition will also be determined based on laboratory calibration with different materials. Secondary particles dislodged from the top aluminum surface of the MOS detector will also be measured to determine the kinetic energy losses during energetic meteoroid impacts. The velocity range of this instrument is 0.1 m/s to more than 14 km/s, while its size sensitivity is from 0.2 microns to millimeter-sized particles. The particulate measurements in space of the kind proposed will be the first simultaneous multipurpose particulate experiment that includes velocities from very slow to hypervelocities, sizes from submicrometer- to pellet-sized diameters, chemical analysis of the particulate composition, and measurements of the kinetic energy losses after energetic impacts of meteroids. The experiment will provide contamination particles and orbital debris data that are critically needed for our present understanding of the space environment. The data will also be used to validate contamination and orbital debris models for predicting optimal configuration of future space sensors and for understanding their effects on sensitive surfaces such as mirrors, lenses, paints, and thermal blankets.

Lesho, J. C.↗
NASA NTRS2007

Far-Infrared Blocked Impurity Band Detector Development

DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

Hogue, H. H.↗
DOE OSTI2024

Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam

Thin film detectors which incorporate semiconductor materials other than silicon have the potential to build upon their unique material properties and offer advantages such as faster response times, operation at room temperature, and radiation hardness. To explore the possibility, promising candidate materials were selected, and particle tracking detectors were fabricated. An indium phosphide detector with a metal-intrinsic-metal structure has been fabricated for particle tracking. The detector was tested using radioactive sources and a high energy proton beam at Fermi National Accelerator Laboratory. In addition to its simplistic design and fabrication process, the indium phosphide particle detector showed a very fast response time of hundreds of picoseconds for the 120 GeV protons, which are comparable to the ultra-fast silicon detectors. This fast-timing response is attributed to the high electron mobility of indium phosphide. Such material properties can be leveraged to build novel detectors with superlative performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Production-Ready CsPbBr3 Module Fabrication

The purpose of this SBIR was to work on evaluation, development, and testing of CsPbBr3 semiconductors for use in commercial gamma-ray detection. The overarching goal was to demonstrate the capability to fabricate functional detectors through resources available to H3D, Inc in pursuit of an alternative to CdZnTe for room-temperature semiconductor detectors. Throughout the project, CdZnTe crystals from Redlen were used as a control group to demonstrate whether the fabrication processes could produce reasonable results. The CdZnTe crystals were diced into roughly 6 mm x 6 mm x 4.5 mm pieces and electrodes were evaporated onto planar faces. In one case, pixels were patterned through a laser ablation method; in the other, a rudimentary pixel shadow-mask was fabricated, and the pixels were generated in the evaporation process. A 16 mm x 16 mm x 14 mm CsPbBr3 crystal was diced into four smaller crystals. These CsPbBr3 had electrodes applied in a similar way to the CdZnTe samples with a rudimentary mask used for pixels on the cathode. Tested CdZnTe pieces were found to generally function with reasonable, low-energy performance. CsPbBr3 crystals were found to be non-functional under forward bias with a large dark-current. A separate attempt, using reverse bias in a non-H3D, Inc test system, observed a dark current similar to previous observations, and some active pixels but no waveforms were observed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1985

Laser activated MTOS microwave device

A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors. Each capacitor includes a thin, light-absorptive aluminum electrode which overlies a thin oxide layer and a lightly doped region implanted in an intrinsic silicon substrate.

Maserjian, J.↗
DOE OSTI2022

Detection of high energy ionizing radiation using deeply depleted graphene–oxide–semiconductor junctions

Graphene’s linear band structure and two-dimensional density of states provide an implicit advantage for sensing charge. Here, these advantages are leveraged in a deeply depleted graphene–oxide–semiconductor (D2GOS) junction detector architecture to sense carriers created by ionizing radiation. Specifically, the room temperature response of a silicon-based D2GOS junction is analyzed during irradiation with 20 MeV Si4+ ions. Detection was demonstrated for doses ranging from 12 to 1200 ions with device functionality maintained with no substantive degradation. To understand the device response, D2GOS pixels were characterized post-irradiation via a combination of electrical characterization, Raman spectroscopy, and photocurrent mapping. This combined characterization methodology underscores the lack of discernible damage caused by irradiation to the graphene while highlighting the nature of interactions between the incident ions and the silicon absorber.

Ruiz, Isaac↗
NASA NTRS1969

Calibratable solid-state pressure switch

Pressure switch, incorporating a semiconductor light-detector coupled to an electrically controlled actuating unit, provides accurate and reliable switching over a broad range of pressures and environments.

Source record↗
NASA NTRS1972

Testing methods and techniques: Testing electrical and electronic devices: A compilation

The methods, techniques, and devices used in testing various electrical and electronic apparatus are presented. The items described range from semiconductor package leak detectors to automatic circuit analyzer and antenna simulators for system checkout. In many cases the approaches can result in considerable cost savings and improved quality control. The testing of various electronic components, assemblies, and systems; the testing of various electrical devices; and the testing of cables and connectors are explained.

Source record↗
NASA NTRS1974

Nondestructive activation analysis of sample of lunar surface material returned by Luna 16 automatic station

The composition of a sample of lunar surface material returned by the Luna 16 automatic station from the Sea of Fertility was studied, using nondestructive activation analysis. The structure of the returned surface material is inhomogeneous; the surficial material is thin, quite homogeneous, and the granularity increases with depth. Based on grain size, the sample was separated into five zones. The activation analysis was conducted on a sample taken from the friable surficial layer, zone A. The content of Al, Mn, Na, Cr, Co, Fe, and Sc was determined by nondestructive activation analysis of the sample. In determining Cr, Co, Fe, and Sc, the sample was irradiated for 24 hours and cooled for 10 days. Gamma spectra of the samples were recorded with a semiconductor Ge(Li)-detector and a multichannel analyzer, and measurement data were processed with an electronic computer.

Chayko, M.↗