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At least 163 records · Page 9

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DOE OSTI2021

Switching Device-Cognizant Sequential Distribution System Restoration

This paper presents an optimization framework for sequential reconfiguration using an assortment of switching devices and repair process in distribution system restoration. Compared to existing studies, this paper considers types, capabilities and operational limits of different switching devices, making it applicable in practice. We develop a novel multi-phase method to find the optimal sequential operation of various switching devices and repair faulted areas. We consider circuit breakers, reclosers, sectionalizers, load breaker switches, and fuses. The switching operation problem is decomposed into two mixed-integer linear programming (MILP) subproblems. The first subproblem determines the optimal network topology and estimates the number of steps to reach that topology, while the second subproblem generates a sequence of switching operations to coordinate the switches. For repairing the faults, we design an MILP model that dispatches repair crews to clear faults and replace melted fuses. After clearing a fault, we update the topology of the network by generating a new sequence of switching operations, and the process continues until all faults are cleared. To improve the computational efficiency, a network reduction algorithm is developed to group line sections, such that only switchable sections are present in the reduced network. The proposed method is validated on the IEEE 123-bus and 8500-bus systems.

distribution system↗

DOE OSTI2023

A Threshold Helium Leakage Detection Switch with Ultra Low Power Operation

Detecting helium leakage is important in many applications, such as in dry cask nuclear waste storage systems. This work develops a helium detection system based on the relative permittivity (dielectric constant) difference between air and helium. This difference changes the status of an electrostatic microelectromechanical system (MEMS) switch. The switch is a capacitive-based device and requires a very negligible amount of power. Exciting the switch’s electrical resonance enhances the MEMS switch sensitivity to detect low helium concentration. This work simulates two different MEMS switch configurations: a cantilever-based MEMS modeled as a single-degree-freedom model and a clamped-clamped beam MEMS molded using the COMSOL Multiphysics finite-element software. While both configurations demonstrate the switch’s simple operation concept, the clamped-clamped beam was selected for detailed parametric characterization due to its comprehensive modeling approach. The beam detects at least 5% helium concentration levels when excited at 3.8 MHz, near electrical resonance. The switch performance decreases at lower excitation frequencies or increases the circuit resistance. The MEMS sensor detection level was relatively immune to beam thickness and parasitic capacitance changes. However, higher parasitic capacitance increases the switch’s susceptibility to errors, fluctuations, and uncertainties.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2018

Switch-connected HyperX network

A network system includes a plurality of sub-network planes and global switches. The sub-network planes have a same network topology as each other. Each of the sub-network planes includes edge switches. Each of the edge switches has N ports. Each of the global switches is configured to connect a group of edge switches at a same location in the sub-network planes. In each of the sub-network planes, some of the N ports of each of the edge switches are connected to end nodes, and others of the N ports are connected to other edge switches in the same sub-network plane, other of the N ports are connected to at least one of the global switches.

42 ENGINEERING↗

DOE OSTI2022

SLAC LINAC Sub-booster Modulator Upgrading with Solid State Switch

The LINAC sub-booster modulator was designed in last 60s decade and has serviced SLAC LINAC about 60 years without primary switching upgrade. The primary switch for high power pulse is vacuum tetrode switch. Recently the vacuum switch price has surged, probably because more and more customers have shifted to the solid-state switch from the vacuum switch. With the foresight of the vacuum switch will finally become obsolete in market, the solid-state switch has been tested in SLAC LINAC sub-booster modulator and the performance is evaluated. In this paper, the design and performance will be reported.

Chen, Xupeng↗

DOE OSTI2022

Scalable Al 2 O 3 –TiO 2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Abstract Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here, a simple and scalable material system of conductive oxide interfaces is employed, and their unique properties are leveraged for a new type of resistive switching device. An Al 2 O 3 –TiO 2 ‐based valence‐change resistive switching device, where the conductive oxide interface serves both as the bottom electrode and as a reservoir of defects for switching, is demonstrated. The amorphous–polycrystalline Al 2 O 3 –TiO 2 conductive interface is obtained following the technological path of simplifying the fabrication of the 2D electron gases (2DEGs), making them scalable for practical mass integration. Physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance is combined. The origin of the resistive switching is pinpointed to the conductive oxide interface, which serves both as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence‐change resistive switching devices. The new device, based on scalable and complementary metal–oxide–semiconductor (CMOS)‐technology‐compatible fabrication processes, opens new design spaces toward increased tunability and simplification of the device selection challenge.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Optimal Variable Switching Frequency Scheme to Reduce Loss of Single-Phase Grid-Connected Inverter With Unipolar and Bipolar PWM

Reducing the power loss of a converter without increasing its volume or cost in hardware has always been a much sought-after but challenging goal. This article proposes a comprehensive variable switching frequency (VSF) scheme to improve the overall system efficiency while still meeting a given total harmonic distortion (THD) requirement without any hardware changes, achieved only by changes to the controller. In this article, it is analyzed that for the H-bridge inverter, the inductor copper loss and the switch conduction loss are independent of the switching frequency (SF), while the device switching loss and the inductor core loss are functions of the SF. This article aims at weighting the combined switching loss and inductor core loss for both the unipolar and bipolar modulation techniques, with the constraint on the output THD, which, for fixed passive components, is a function of inductor ripple current that in turn depends on the SF. An optimal VSF scheme is devised through rigorous mathematical analysis of the output ripple component and the SF-dependent losses. In each switching cycle, the inductor ripple current is predicted with the circuit parameters, such as duty cycle, switching period, inductance, and dc voltage, and by implementing the VSF scheme, the current ripple is optimally varied such as to satisfy the THD requirement while reducing the SF-dependent losses. A generalized method to design VSF schemes for any topology and specifications is also presented, which would help future users in designing the VSF controller. A 1-kW H-bridge inverter using SiC MOSFETs and powdered iron/ferrite core has been built to validate the theoretical analysis. Both constant SF (CSF) scheme (200 kHz) and optimal VSF scheme with simple controller modification have been implemented in the experimental prototype using DSP TMS320f28335. Compared with the CSF scheme, the optimal VSF scheme shows a significant improvement in the system efficiency at rated power from 94.7%...

conduction loss↗

DOE OSTI2022

Toward higher-radix switches with co-packaged optics for improved network locality in data center and HPC networks [Invited]

In this work, we study the network locality improvements that can be achieved by using co-packaged optics in data center and high-performance computing (HPC) networks. The increased escape bandwidth offered by co-packaged optics can enable switches with speeds of 51.2 Tb/s and beyond. From a network architecture perspective, the key advantages of introducing co-packaged optics at the switch points include the implementation of large-scale topologies of >12,000 end points with 4× higher bisection bandwidth and the reduction of the required number of switches by >40% compared with state-of-the-art approaches. From a network operation perspective, improved network locality and faster operation can be achieved since the higher-radix switches can mitigate the impact of network contention. Placing applications under fewer leaf switches reduces the number of packets that cross the spine switches in a leaf-spine topology. The proposed scheme is evaluated via discrete-event simulations: we initially evaluate the network locality properties of the system by using virtual-machine traces from a production data center, and we subsequently quantify the performance improvements by simulating an all-to-all pattern for a variety of message sizes over a number of nodes. The results suggest that co-packaged optics form a promising solution for keeping up with bandwidth scaling in future networks. The virtual-machine analysis shows that large-scale applications can be placed under up to 50% fewer first-level switches, while the network analysis shows speedups of up to 7.1, which translates to execution time reductions of up to 26% and 42.7% for applications with communication ratios of 0.3 and 0.5, respectively.

99 GENERAL AND MISCELLANEOUS↗

DOE OSTI2022

High Velocity, Low‐Voltage Collective In‐Plane Switching in (100) BaTiO 3 Thin Films

Abstract Ferroelectrics are being increasingly called upon for electronic devices in extreme environments. Device performance and energy efficiency is highly correlated to clock frequency, operational voltage, and resistive loss. To increase performance it is common to engineer ferroelectric domain structure with highly‐correlated electrical and elastic coupling that elicit fast and efficient collective switching. Designing domain structures with advantageous properties is difficult because the mechanisms involved in collective switching are poorly understood and difficult to investigate. Collective switching is a hierarchical process where the nano‐ and mesoscale responses control the macroscopic properties. Using chemical solution synthesis, epitaxially nearly‐relaxed (100) BaTiO 3 films are synthesized. Thermal strain induces a strongly‐correlated domain structure with alternating domains of polarization along the [010] and [001] in‐plane axes and 90° domain walls along the [011] or [01] directions. Simultaneous capacitance–voltage measurements and band‐excitation piezoresponse force microscopy revealed strong collective switching behavior. Using a deep convolutional autoencoder, hierarchical switching is automatically tracked and the switching pathway is identified. The collective switching velocities are calculated to be ≈500 cm s −1 at 5 V (7 kV cm −1 ), orders‐of‐magnitude faster than expected. These combinations of properties are promising for high‐speed tunable dielectrics and low‐voltage ferroelectric memories and logic.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration

We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2015

Resistance switching memory in perovskite oxides

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Magnetic switching in granular FePt layers promoted by near-field laser enhancement

Light-matter interaction at the nanoscale in magnetic materials is a topic of intense research in view of potential applications in next-generation high-density magnetic recording. Laser-assisted switching provides a pathway for overcoming the material constraints of high-anisotropy and high-packing density media, though much about the dynamics of the switching process remains unexplored. We use ultrafast small-angle X-ray scattering at an X-ray free-electron laser to probe the magnetic switching dynamics of FePt nanoparticles embedded in a carbon matrix following excitation by an optical femtosecond laser pulse. We observe that the combination of laser excitation and applied static magnetic field, 1 order of magnitude smaller than the coercive field, can overcome the magnetic anisotropy barrier between “up” and “down” magnetization, enabling magnetization switching. This magnetic switching is found to be inhomogeneous throughout the material with some individual FePt nanoparticles neither switching nor demagnetizing. The origin of this behavior is identified as the near-field modification of the incident laser radiation around FePt nanoparticles. Furthermore, the fraction of not-switching nanoparticles is influenced by the heat flow between FePt and a heat-sink layer.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Tunable Interfacial to Filamentary Resistive Switching Mechanism in Room-Temperature-Grown Amorphous YBa 2 Cu 3 O x with Excess Cu Addition

Resistive switching technologies have the potential not only to create large efficiency gains in computer memory but also to revolutionize emerging fields such as neuromorphic computing. In this paper, we report on novel resistive switching behavior in devices made from room-temperature-grown Cu-rich amorphous YBa 2 Cu 3 O x (YBCO) films, a material otherwise well-known as a high-temperature superconductor. In Nb:STO substrate/amorphous YBCO film (≈200 nm)/metallic Cu (15 nm)/metallic Pt (15 nm) devices, we demonstrate that the resistive switching can be tuned between mechanisms involving extended areas of the YBCO/electrode interface and a single-point filamentary mechanism simply by changing the Cu content of the deposition target and hence in the films. Changing the Cu content can also be used to optimize the properties of the devices further, with devices with an added 15 mol % of Cu in YBCO initially providing an on/off ratio >100, switching endurance potential >6500 cycles, and state retention >2 × 10 4 s, all at low switching fields of 0.3 MV/cm. The amalgam of promising resistive switching properties, fast growth (150 nm/min) at room temperature, and tuneability of the switching mechanism indicates the strong potential of this proof-of-concept amorphous system for future memory applications.

Cu↗

DOE OSTI2014

Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Switching characteristics for ferroelectric random access memory based on RC model in poly(vinylidene fluoride-trifluoroethylene) ultrathin films

The switching characteristic of the poly(vinylidene fluoride-trifluoroethlene) (P(VDF-TrFE)) films have been studied at different ranges of applied electric field. It is suggest that the increase of the switching speed upon nucleation protocol and the deceleration of switching could be related to the presence of a non-ferroelectric layer. Remarkably, a capacitor and resistor (RC) links model plays significant roles in the polarization switching dynamics of the thin films. For P(VDF-TrFE) ultrathin films with electroactive interlayer, it is found that the switching dynamic characteristics are strongly affected by the contributions of resistor and non-ferroelectric (non-FE) interface factors. A corresponding experiment is designed using poly(3,4-ethylene dioxythiophene):poly(styrene sulfonic) (PEDOT-PSSH) as interlayer with different proton concentrations, and the testing results show that the robust switching is determined by the proton concentration in interlayer and lower leakage current in circuit to reliable applications of such polymer films. These findings provide a new feasible method to enhance the polarization switching for the ferroelectric random access memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Space-time evolution of ejected plasma for the triggering of gas switch

Ejected plasma has been widely applied to the discharge process of gas spark switches as a trigger technology, and the development process of ejected plasma has a direct and important effect on the discharge characteristics of gas switches. In this paper, both the injection characteristics and space-time evolution of ejected plasma for the triggering of gas spark switch with different stored energies, pulse polarities, and pressures are studied. The discharge characteristics and breakdown process of a gas switch ignited by ejected plasma under different working coefficients are also discussed briefly. The results show that stored energy has significant influence on the characteristics of ejected plasma. With the increase of stored energy, the propulsion mode of ejected plasma in the axial direction transforms from “plasmoid” to “plasma flow,” and the distribution of the ejected plasma goes through “cloud,” “core-cloud,” and “branch” in sequence. The velocity of ejected plasma under negative pulse polarity is obviously higher than that under positive pulse polarity, especially at the very beginning time. The radial dimensions of ejected plasma under two kinds of pulse polarities follow the similar varying pattern over time, which increase first and then decrease, assuming an inverted “U”-shaped curve. With the increase of pressure, the velocity of ejected plasma significantly decreases and the “branch” channels droop earlier. Applying the ejected plasma to the triggering of a gas switch, the switch can be triggered reliably in a much wide working coefficient range of 10%–90%. With the increase of working coefficient, the breakdown process of the switch translates from slow working mode to fast working mode, and the delay time reduces from tens of μs to hundreds of ns.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Spin orbit torque switching of synthetic Co/Ir/Co trilayers with perpendicular anisotropy and tunable interlayer coupling

Spin orbit torque (SOT) has attracted much attention as an energy efficient electrical method to switch the magnetization in single magnetic layer with both in-plane and perpendicular anisotropy. Here, we report SOT switching of synthetic antiferromagnetic and ferrimagnetic Co/Ir/Co trilayers, where the net magnetization and the interlayer coupling strength are highly controllable. Here, a weak external field dependence of the SOT switching was observed due to the robust domain wall structure in the trilayer. The switching current density was observed to scale inversely with the net magnetization. For trilayers with the same net magnetization, switching current is independent of the layer order because switching in the thicker Co layer dominates. In both ferromagnetic and antiferromagetic regimes, the switching current reflects the interlayer coupling strength.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2023

Influence of surface adsorption on MoS 2 memtransistor switching kinetics

Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS 2 ) memtransistors exhibit gate-tunable memristive switching to implement emerging memory operations and neuromorphic computing paradigms. Grain boundaries and sulfur vacancies are critical for memristive switching; however, the underlying physical mechanisms are not fully understood. Furthermore, the adsorption of water and gaseous species strongly perturbs electronic transport in monolayer MoS 2 , and little work has been done to explore the influence of surface interactions on defect-related kinetics that produces memristive switching. Here, we study the switching kinetics of back-gated MoS 2 memtransistors using current transient measurements in a controlled atmosphere chamber. Here, we observe that adsorbed water molecules lead to suppression of the electronic trap-filling processes concomitant with the resistive switching process, resulting in altered kinetics of the resistive switching. Additionally, using the transient response from “bunched” drain voltage pulse trains performed as a function of temperature, we extract the energy of the affected trap state and find that it places the trap roughly midgap [E T = E C – 0.7 (±0.4) eV]. Our results highlight the importance of controlling for surface interactions that may affect switching kinetics in 2D memtransistors, synaptic transistors, and related memory devices.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Q-switched and mode-locked Er{sup 3+}-doped fibre laser using a single-multi-single fibre filter and piezoelectric

The active Q-switched and passive mode-locked Er{sup 3+}-doped all-fibre laser is presented. The fibre laser centre wavelength is located at 1563 nm and determined by the homemade singlemulti- single (SMS) in-line fibre filter. The laser spectrum width is nearly 0.1 nm. The active Q-switched mechanism relies on the polarisation state control using a piezoelectric to press a segment of passive fibre on the circular cavity. The nonlinear polarisation rotation technology is used to realise the passive self-started modelocked operation. In the passive mode-locked regimes, the output average power is 2.1 mW, repetition frequency is 11.96 MHz, and single pulse energy is 0.18 nJ. With the 100-Hz Q-switched regimes running, the output average power is 1.5 mW. The total Q-switched pulse width is 15 μs, and every Q-switched pulse is made up by several tens of mode-locked peak pulses. The calculated output pulse energy of the Q-switched fibre laser is about 15 μJ, and the energy of every mode-locked pulse is about 64–68 nJ during a Q-switched pulse taking into account the power fraction propagating between pulses. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗