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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Transient-Switch-Signal Suppressor

Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

Bozeman, Richard J., Jr.↗
DOE OSTI2019

Design and modelling of the photonic crystal fano structure for all optical switching applications

In this paper, the optical Fano switch based on the 2D slab photonic crystal is analyzed. Switching characteristics are improved by manipulating the Q factors of cavities. Modified device with enhanced Fano resonance has lower energy consumption than other previous optical switches. Results show that, the switching contrast is enhanced while the quality factor has remained in its highest value. Therefore, the typical important trade off between switching contrast and quality factor has vanished in the modified structure. The switching contrast is improved from 7 to 34 db in constant Δλ{sub peak−peak} of 0.3 nm in the modified structure which leads to decreasing the energy consumption of the device. In the previous devices, the maximum reported contrast is about 20 db for Δλ{sub peak−peak} of 0.6 nm. A coupled mode theory for analyzing the structure is developed. The results of finite difference time domain numerical simulation are in good agreement with the theoretical coupled mode theory. Results show that the switching contrast of the modified Fano switch is enhanced two times, consequently the loss is suppressed and the bandwidth is improved.

36 MATERIALS SCIENCE↗
DOE OSTI2016

A solid-state dielectric elastomer switch for soft logic

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease of manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

EMI Mitigation of a Ćuk-Based Power-Electronic System Using Switching-Sequence-Based Control

Switching-sequence-based control (SBC) laws when designed based on topological switching behavior can have positive effects on slow- and fast-scale dynamics of a power-electronic system (PES). The slow-scale control can encompass fast PES state regulation and tracking, based on predefined objective, while fastscale control can address differential-mode (DM) and commonmode (CM) spectral-peak energy associated with PES switching operation. Such control laws may offer enhanced programmability to conventional PES design where bulky electromagnetic interference (EMI) filters have been traditionally used to reduce EMI of switching power converters to meet EMI regulatory standards. An EMI filter is always a less programmable solution since it is usually designed for the worst-case EMI mitigation and usually overkill for a PES operating under reduced load condition. The control scheme outlined in this article offers EMI mitigation across wide operating regions without compromising PES regulation. Moreover, it does so by use of switching sequences that guarantee the reachability of the PES dynamics using an advanced Lyapunov-function-based approach. SBC is a powerful tool to generate control actions for a PES based on multivariate PES state constraints. Hence, contemporary EMI regulatory standards are used as constraints in the SBC formulation to operate the PES under wide operating regime while autonomously mitigating the EMI levels. The work may be of paramount importance for operating the ultra-fast-transition recent wide-bandgap semiconductor devices like GaN–FET and SiC MOSFET under higher power with increasing switching frequencies, which is usually desirable for increased power density and reduced switching losses. Here, a hardware Cuk–PES operated ´ with GaN–FETs is fabricated and is used for case illustration. It is shown by experimental results how SBC mitigate DM and CM EMI noise of the PES while maintaining regulation even for the higher order nonminimum phase PES, while reducing sensor requirements using state observer derived from the switching model of the PES.

42 ENGINEERING↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2014

A light-modified ferroelectric resistive switching behavior in Ag/BaMoO{sub 4}/FTO device at ambient temperature

BaMoO{sub 4} powder was prepared by a facile hydrothermal synthesis. And the BaMoO{sub 4}/FTO device was fabricated by a spin-coated method, in which the thickness of BaMoO{sub 4} layer is about 20 µm. The bipolar resistive switching effect has been observed in Ag/BaMoO{sub 4}/FTO device. Moreover, the resistive switching effect of the device is greatly improved by white light irradiation. The resistive switching behavior is explained by the polarization reversal that changes the charge distribution and modulates the Schottky barriers. - Graphical abstract: We fabricate a resistive switching device based on Ag/BaMoO{sub 4}/FTO, the device shows superior white-light controlled bipolar resistive switching memristive characteristics. - Highlights: • The BaMoO{sub 4} nanosquares powder was prepared by a hydrothermal synthesis. • The resistive switching of the Ag/BaMoO{sub 4}/FTO device was observed for the first time. • It is shown that the resistive switching is greatly improved under the white light irradiation. • The mechanism of resistive switching is attributed to the ferroelectric polarization reversal.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Kinetic control of tunable multi-state switching in ferroelectric thin films

Deterministic creation of multiple ferroelectric states with intermediate values of polarization remains challenging due to the inherent bi-stability of ferroelectric switching. In this work we show the ability to select any desired intermediate polarization value via control of the switching pathway in (111)-oriented PbZr 0.2 Ti 0.8 O 3 films. Such switching phenomena are driven by kinetic control of the volume fraction of two geometrically different domain structures which are generated by two distinct switching pathways: one direct, bipolar-like switching and another multi-step switching process with the formation of a thermodynamically-stable intermediate twinning structure. Such control of switching pathways is enabled by the competition between elastic and electrostatic energies which favors different types of ferroelastic switching that can occur. As a whole, our work reflects an alternative approach that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, and repeatedly obtainable multi-state polarization without compromising other important properties, and holds promise for non-volatile multi-state functional applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Natural switches in behaviour rapidly modulate hippocampal coding

Throughout their daily lives, animals and humans often switch between different behaviours. However, neuroscience research typically studies the brain while the animal is performing one behavioural task at a time, and little is known about how brain circuits represent switches between different behaviours. Here we tested this question using an ethological setting: two bats flew together in a long 135 m tunnel, and switched between navigation when flying alone (solo) and collision avoidance as they flew past each other (cross-over). Bats increased their echolocation click rate before each cross-over, indicating attention to the other bat. Hippocampal CA1 neurons represented the bat’s own position when flying alone (place coding). Notably, during cross-overs, neurons switched rapidly to jointly represent the interbat distance by self-position. This neuronal switch was very fast—as fast as 100 ms—which could be revealed owing to the very rapid natural behavioural switch. The neuronal switch correlated with the attention signal, as indexed by echolocation. Interestingly, the different place fields of the same neuron often exhibited very different tuning to interbat distance, creating a complex non-separable coding of position by distance. Theoretical analysis showed that this complex representation yields more efficient coding. Overall, our results suggest that during dynamic natural behaviour, hippocampal neurons can rapidly switch their core computation to represent the relevant behavioural variables, supporting behavioural flexibility.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2022

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

42 ENGINEERING↗
DOE OSTI2017

Intrinsic polarization switching mechanisms in BiFeO 3

A first-principles-based effective Hamiltonian technique is used to investigate the polarization switching mechanisms in two polymorphic phases of BiFeO 3 having no defects. The switching mechanism is homogeneous for any switching field in the rhombohedral phase, while in the supertetragonal phase it changes from the classical nucleation and domain-wall motion to nucleation-limited switching with virtually no propagation, and then to homogeneous switching with increasing electric field. The first two inhomogeneous switching mechanisms of the supertetragonal phase of BiFeO 3 are thus intrinsic in nature, and can be well described by the classical and nucleation-limited switching models, respectively. The reason behind their absence in the rhombohedral phase is also indicated. Moreover, the field-induced changes of switching mechanism within the supertetragonal phase are further elucidated from an energetic point of view.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Toroidal Field Reversing Switch

A motor-driven, high-current switch is being designed by Stäubli Electrical Connectors in collaboration with Princeton Plasma Physics Laboratory to reverse the DIII-D Toroidal field coil current. The existing field reversing procedure requires approximately 4 h of labor performed between run days to reconfigure the bus work, thus requiring a separate run day to complete experimental scans with both field directions. This typically results in different wall conditions which complicate the results or make them invalid. The proposed switch will complete the reversal process in approximately 4-5 min, between shots, so that wall conditions are not a factor, and easily fits within the 10-12 min DIII-D shot cycle. The switch is a compact design fitting into a 157.5 × 41 cm envelope. The switch uses two copper pins that slide between Stäubli MULTILAM contacts. The switch is rated for total current of 180-kA dc for 10 s with a 12-min repetition rate; the maximum operating coil current is 124-kA dc. The switch diagnostics include: voltage drop, current monitor, thermal monitors, position sensors, and motor torque. Here, the switch is rated for 300 cycles per year, and 3000 cycles overall before contact replacement, with contact inspection yearly. The design details and operation of the switch are covered in this article.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Switching Device-Cognizant Sequential Distribution System Restoration

This paper presents an optimization framework for sequential reconfiguration using an assortment of switching devices and repair process in distribution system restoration. Compared to existing studies, this paper considers types, capabilities and operational limits of different switching devices, making it applicable in practice. We develop a novel multi-phase method to find the optimal sequential operation of various switching devices and repair faulted areas. We consider circuit breakers, reclosers, sectionalizers, load breaker switches, and fuses. The switching operation problem is decomposed into two mixed-integer linear programming (MILP) subproblems. The first subproblem determines the optimal network topology and estimates the number of steps to reach that topology, while the second subproblem generates a sequence of switching operations to coordinate the switches. For repairing the faults, we design an MILP model that dispatches repair crews to clear faults and replace melted fuses. After clearing a fault, we update the topology of the network by generating a new sequence of switching operations, and the process continues until all faults are cleared. To improve the computational efficiency, a network reduction algorithm is developed to group line sections, such that only switchable sections are present in the reduced network. The proposed method is validated on the IEEE 123-bus and 8500-bus systems.

distribution system↗
DOE OSTI2023

A Threshold Helium Leakage Detection Switch with Ultra Low Power Operation

Detecting helium leakage is important in many applications, such as in dry cask nuclear waste storage systems. This work develops a helium detection system based on the relative permittivity (dielectric constant) difference between air and helium. This difference changes the status of an electrostatic microelectromechanical system (MEMS) switch. The switch is a capacitive-based device and requires a very negligible amount of power. Exciting the switch’s electrical resonance enhances the MEMS switch sensitivity to detect low helium concentration. This work simulates two different MEMS switch configurations: a cantilever-based MEMS modeled as a single-degree-freedom model and a clamped-clamped beam MEMS molded using the COMSOL Multiphysics finite-element software. While both configurations demonstrate the switch’s simple operation concept, the clamped-clamped beam was selected for detailed parametric characterization due to its comprehensive modeling approach. The beam detects at least 5% helium concentration levels when excited at 3.8 MHz, near electrical resonance. The switch performance decreases at lower excitation frequencies or increases the circuit resistance. The MEMS sensor detection level was relatively immune to beam thickness and parasitic capacitance changes. However, higher parasitic capacitance increases the switch’s susceptibility to errors, fluctuations, and uncertainties.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS1983

Automatic thermal switch

An automatic thermal switch to control heat flow includes two thermally conductive plates and a thermally conductive switch saddle pivotally mounted to the first plate. A flexible heat carrier is connected between the switch saddle and the second plate. A phase-change power unit, including a piston coupled to the switch saddle, is in thermal contact with the first thermally conductive plate. A biasing element biases the switch saddle in a predetermined position with respect to the first plate. When the phase-change power unit is actuated by an increase in heat transmitted through the first place, the piston extends and causes the switch saddle to pivot, thereby varying the thermal conduction between the two plates through the switch saddle and flexible heat carrier. The biasing element, switch saddle, and piston can be arranged to provide either a normally closed or normally opened thermally conductive path between the two plates.

Cunningham, J. W.↗
NASA NTRS1984

Simulation study of a new inverse-pinch high Coulomb transfer switch

A simulation study of a simplified model of a high coulomb transfer switch is performed. The switch operates in an inverse pinch geometry formed by an all metal chamber, which greatly reduces hot spot formations on the electrode surfaces. Advantages of the switch over the conventional switches are longer useful life, higher current capability and lower inductance, which improves the characteristics required for a high repetition rate switch. The simulation determines the design parameters by analytical computations and comparison with the experimentally measured risetime, current handling capability, electrode damage, and hold-off voltages. The parameters of initial switch design can be determined for the anticipated switch performance. Results are in agreement with the experiment results. Although the model is simplified, the switch characteristics such as risetime, current handling capability, electrode damages, and hold-off voltages are accurately determined.

Choi, S. H.↗
NASA NTRS1989

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Choi, Sang H.↗
NASA NTRS1989

Design for megavolt inverse-pinch plasma switch

To meet the requirements for the output switch of an ultra-high-power (greater than 30 GW) pulser, an upgrading design for an inverse-pinch plasma switch (INPIS) is considered. The hold-off voltage of 1 MV is met by adopting multistage rim-fire electrodes and using SF6 as the dielectric gas of the switch. The inductance and capacitance of the switch, which are restricted by the short rise-time (less than 0.1 microsec) requirement, were met by adjusting the dimensions of the coaxial electrodes of the switch. The input/output transmission lines attached to the switch will be immersed in oil to meet the high voltage insulation and impedance-matching requirements. Since the forwarding current is relatively low with respect to the switch capability, the lifetime of the switch is expected to exceed the requirement of 10,000 shots.

Lee, Ja H.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗