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At least 163 records · Page 9

Built-in electric field in ZnO based semipolar quantum wells grown on (1012) ZnO substrates

We report on the properties of semipolar (Zn,Mg)O/ZnO quantum wells homoepitaxially grown by molecular beam epitaxy on (1012) R-plane ZnO substrates. We demonstrate that atomically flat interfaces can be achieved with fully relaxed quantum wells because the mismatch between (Zn,Mg)O and ZnO is minimal for this growth orientation. The photoluminescence properties evidence a quantum confined Stark effect with an internal electric field estimated to 430 kV/cm for a 17% Mg content in the barriers. The quantum well emission is strongly polarized along the 1210 direction and a comparison with the semipolar bulk ZnO luminescence polarization points to the effect of the confinement.

36 MATERIALS SCIENCE↗

Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots

We compare the optical properties of ensembles of polar (0001) and semipolar (11–22) Al{sub 0.5}Ga{sub 0.5}N/GaN quantum dots grown by molecular beam epitaxy The polar quantum dot emission shows a huge Stark shift. Using dot height distributions measured by transmission electron microscopy, a simple model allows accounting for the PL energies and lineshapes, and to the screening of the Stark field. The semipolar quantum dots emission show a much weaker Stark effect. High room temperature quantum yields attest the efficiency of 3D-confinement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Propagation of vector solitons in a quasi-resonant medium with stark deformation of quantum states

The nonlinear dynamics of a vector two-component optical pulse propagating in quasi-resonance conditions in a medium of nonsymmetric quantum objects is investigated for Stark splitting of quantum energy levels by an external electric field. We consider the case when the ordinary component of the optical pulse induces {sigma} transitions, while the extraordinary component induces the {pi} transition and shifts the frequencies of the allowed transitions due to the dynamic Stark effect. It is found that under Zakharov-Benney resonance conditions, the propagation of the optical pulse is accompanied by generation of an electromagnetic pulse in the terahertz band and is described by the vector generalization of the nonlinear Yajima-Oikawa system. It is shown that this system (as well as its formal generalization with an arbitrary number of optical components) is integrable by the inverse scattering transformation method. The corresponding Darboux transformations are found for obtaining multisoliton solutions. The influence of transverse effects on the propagation of vector solitons is investigated. The conditions under which transverse dynamics leads to self-focusing (defocusing) of solitons are determined.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1−x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1−x}Sn{sub x} and relaxed Si{sub 1−y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5 × 10{sup 4} cm{sup −1}) and the shift of the direct transition under large Stark effect at 3 V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Wavelength limits for InGaN quantum wells on GaN

The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600 nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

In this paper, we report on the effects of including Si-doped (In)GaN prelayers on the low temperature optical properties of a blue-light emitting InGaN/GaN single quantum well. We observed a large blue shift of the photoluminescence peak emission energy and significant increases in the radiative recombination rate for the quantum well structures that incorporated Si-doped prelayers. Simulations of the variation of the conduction and valence band energies show that a strong modification of the band profile occurs for the quantum wells on Si-doped prelayers due to an increase in strength of the surface polarization field. The enhanced surface polarization field opposes the built-in field across the quantum well and thus reduces this built-in electric field. This reduction of the electric field across the quantum well reduces the Quantum Confined Stark Effect and is responsible for the observed blue shift and the change in the recombination dynamics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Sensitivity of MSE measurements on the beam atomic level population

The effect of variation in atomic level population of a neutral beam on the Motional Stark Effect (MSE) measurements is investigated in the low density plasmas of HSX stellarator. A 30 KeV, 4 A, 3 ms hydrogen diagnostic neutral beam is injected into HSX plasmas of line averaged electron density ranging from 2 to 4 ⋅ 10{sup 18} m{sup −3} at a magnetic field of 1 T. For this density range, the excited level population of the hydrogen neutral beam is expected to undergo variations. Doppler shifted and Stark split H{sub α} and H{sub β} emissions from the beam are simultaneously measured using two cross-calibrated spectrometers. The emission spectrum is simulated and fit to the experimental measurements and the deviation from a statistically populated beam is investigated.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

A real-time algorithm for the harmonic estimation and frequency tracking of dominant components in fusion plasma magnetic diagnostics

The real-time tracking of instantaneous quantities such as frequency, amplitude, and phase of components immerse in noisy signals has been a common problem in many scientific and engineering fields such as power systems and delivery, telecommunications, and acoustics for the past decades. In magnetically confined fusion research, extracting this sort of information from magnetic signals can be of valuable assistance in, for instance, feedback control of detrimental magnetohydrodynamic modes and disruption avoidance mechanisms by monitoring instability growth or anticipating mode-locking events. This work is focused on nonlinear Kalman filter based methods for tackling this problem. Similar methods have already proven their merits and have been successfully employed in this scientific domain in applications such as amplitude demodulation for the motional Stark effect diagnostic. In the course of this work, three approaches are described, compared, and discussed using magnetic signals from the Joint European Torus tokamak plasma discharges for benchmarking purposes.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Electro optical tuning of Tamm-plasmon exciton-polaritons

We report on electro optical tuning of the emission from GaAs quantum wells resonantly coupled to a Tamm-plasmon mode in a hybrid metal/dielectric structure. The structures were studied via momentum resolved photoluminescence and photoreflectance spectroscopy, and the surface metal layer was used as a top gate, which allowed for a precise tuning of the quantum well emission via the quantum confined Stark effect. By tuning the resonance, we were able to observe the characteristic anticrossing behavior of a polaritonic emission in the strong light-matter coupling regime, yielding a Rabi splitting of (9.2 ± 0.2) meV.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Separability and dynamical symmetry of Quantum Dots

The separability and Runge–Lenz-type dynamical symmetry of the internal dynamics of certain two-electron Quantum Dots, found by Simonović et al. (2003), are traced back to that of the perturbed Kepler problem. A large class of axially symmetric perturbing potentials which allow for separation in parabolic coordinates can easily be found. Apart from the 2:1 anisotropic harmonic trapping potential considered in Simonović and Nazmitdinov (2013), they include a constant electric field parallel to the magnetic field (Stark effect), the ring-shaped Hartmann potential, etc. The harmonic case is studied in detail. -- Highlights: • The separability of Quantum Dots is derived from that of the perturbed Kepler problem. • Harmonic perturbation with 2:1 anisotropy is separable in parabolic coordinates. • The system has a conserved Runge–Lenz type quantity.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photoinduced Rotation of Colloidal Semiconductor Nanocrystals in an Electric Field

In this work, we demonstrate that solution-phase semiconductor nanocrystals (NCs) undergo photoinduced rotation in an external electric field. Present measurements backed by theoretical calculations show that the rotation of colloidal NCs is driven by the excited-state dipole moment, which is counterbalanced by the solvent viscosity drag. Corresponding angular velocities range from 0.5°/ns for cubic CsPbBr 3 NCs to 3°/ns for nanoparticles with a large photoinduced charge separation (CdSe/CdS core–shell and dot-in-a-rod NCs). Because of photoinduced rotation, solution-phase semiconductor NCs exhibited an order-of-magnitude increase in the spectral changes caused by the quantum confined Stark effect (QCSE), compared to solid NC assemblies. The enhanced QCSE of colloidal NCs reflected their global alignment in solution, which could be retained in a solid environment by slow crystallization. Overall, we expect that the demonstrated phenomenon of the colloidal nanocrystal rotation in an electric field will open up new avenues for developing electro-optical and voltage-sensitive applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Reorientation-induced Stokes shifts caused by directional interactions in electronic spectroscopy: Fast dynamics of poly(methyl methacrylate)

Dynamic Stokes shift measurements report on structural relaxation, driven by a dipole created in a chromophore by its excitation from the ground electronic state to the S1 state. Here, we demonstrate that it is also possible to have an additional contribution from orientational relaxation of the Stokes shift chromophore. This effect, called reorientation-induced Stokes shift (RISS), can be observed when the reorientation of the chromophore and the solvent structural relaxation occur on similar time scales. Through a vector interaction, the electronic transition of the chromophore couples to its environment. The orientational diffusive motions of the chromophores will have a slight bias toward reducing the transition energy (red shift) as do the solvent structural diffusive motions. RISS is manifested in the polarization-dependence of the fluorescence Stokes shift using coumarin 153 (C153) in poly(methyl methacrylate) (PMMA). A similar phenomenon, reorientation-induced spectral diffusion (RISD), has been observed and theoretically explicated in the context of two dimensional infrared (2D IR) experiments. Here, we generalize the existing RISD theory to include properties of electronic transitions that generally are not present in vibrational transitions. Expressions are derived that permit determination of the structural dynamics by accounting for the RISS contributions. Using these generalized equations, the structural dynamics of the medium can be measured for any system in which the directional interaction is well represented by a first order Stark effect and RISS or RISD is observed. The theoretical results are applied to the PMMA data, and the structural dynamics are obtained and discussed.

14 SOLAR ENERGY↗

Toward Long-Range Entanglement between Electrically Driven Single-Molecule Magnets

Over the past two decades, several molecules have been explored as possible building blocks of a quantum computer, a device that would provide exponential speedups for a number of problems, including the simulation of large, strongly correlated chemical systems. Achieving strong interactions and entanglement between molecular qubits remains an outstanding challenge. In this research, we show that the TbPc 2 single-molecule magnet has the potential to overcome this obstacle because of its sensitivity to electric fields stemming from the hyperfine Stark effect. We show how this feature can be leveraged to achieve long-range entanglement between pairs of molecules using a superconducting resonator as a mediator. Our findings suggest that the molecule–resonator interaction is near the edge of the strong-coupling regime and could potentially pass into it given a more detailed, quantitative understanding of the TbPc 2 molecule.

superconducting resonator↗

Conceptual study on using Doppler backscattering to measure magnetic pitch angle in tokamak plasmas

We introduce a new approach to measure the magnetic pitch angle profile in tokamak plasmas with Doppler backscattering (DBS), a technique traditionally used for measuring flows and density fluctuations. The DBS signal is maximised when its probe beam's wavevector is perpendicular to the magnetic field at the cutoff location, independent of the density fluctuations [Hillesheim \emph{et al} 2022 \emph{Nucl. Fusion} \textbf{55} 073024]. Hence, if one could isolate this effect, DBS would then yield information about the magnetic pitch angle. By varying the toroidal launch angle, the DBS beam reaches cutoff with different angles with respect to the magnetic field, but with other properties remaining similar. Hence, the toroidal launch angle which gives maximum backscattered power is thus that which is matched to the pitch angle at the cutoff location, enabling inference of the magnetic pitch angle. We performed systematic scans of the DBS toroidal launch angle for repeated DIII-D tokamak discharges. Experimental DBS data from this scan were analysed and combined with Gaussian beam-tracing simulations using the Scotty code [Hall-Chen \emph{et al} 2022 \emph{Plasma Phys. Control. Fusion} \textbf{64} 095002]. The pitch-angle inferred from DBS is consistent with that from magnetics-only and motional-Stark-effect-constrained (MSE) equilibrium reconstruction in the edge. In the core, the pitch angles from DBS and magnetics-only reconstructions differ by one to two degrees, while simultaneous MSE measurements were not available. The uncertainty in these measurements was under a degree; we show that this uncertainty is primarily due to the error in toroidal steering, the number of toroidally separated measurements, and shot-to-shot repeatability. We find that the error of pitch-angle measurements can be reduced by optimising the poloidal launch angle and initial beam properties. Since DBS has high spatial and temporal resolutions, is non-perturbative, does not require neutral beams, and is likely robust to neutron damage of and debris on the first mirrors, using DBS to measure the pitch angle in future fusion energy systems is especially appealing.

beam tracing↗

Enhanced Light Emission from the Ridge of Two-Dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct-band-gap semiconductor with high mobility from bulk to atomically thin layers and is drastically different from transition-metal dichalcogenides, in which the direct band gap only exists at the single-layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution, which results in the limited absorption of normally incident light that can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. Here we observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperatures due to defect states on the ridge, which can be as much as ~60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light–matter interactions and defect engineering that are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

36 MATERIALS SCIENCE↗

Built-in voltage of organic bulk heterojuction p-i-n solar cells measured by electroabsorption spectroscopy

We investigate the influence of the built-in voltage on the performance of organic bulk heterojuction solar cells that are based on a p-i-n structure. Electrical doping in the hole and the electron transport layer allows to tune their work function and hence to adjust the built-in voltage: Changing the doping concentration from 0.5 to 32 wt% induces a shift of the work function towards the transport levels and increases the built-in voltage. To determine the built-in voltage, we use electroabsorption spectroscopy which is based on an evaluation of the spectra caused by a change in absorption due to an electric field (Stark effect). For a model system with a bulk heterojunction of BF-DPB and C{sub 60}, we show that higher doping concentrations in both the electron and the hole transport layer increase the built-in voltage, leading to an enhanced short circuit current and solar cell performance.

36 MATERIALS SCIENCE↗