Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SPUTTERING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9

Influence of ion source configuration and its operation parameters on the target sputtering and implantation process

In the work, investigation of the features and operation regimes of sputter enhanced ion-plasma source are presented. The source is based on the target sputtering with the dense plasma formed in the crossed electric and magnetic fields. It allows operation with noble or reactive gases at low pressure discharge regimes, and, the resulting ion beam is the mixture of ions from the working gas and sputtering target. Any conductive material, such as metals, alloys, or compounds, can be used as the sputtering target. Effectiveness of target sputtering process with the plasma was investigated dependently on the gun geometry, plasma parameters, and the target bias voltage. With the applied accelerating voltage from 0 to 20 kV, the source can be operated in regimes of thin film deposition, ion-beam mixing, and ion implantation. Multi-component ion beam implantation was applied to {alpha}-Fe, which leads to the surface hardness increasing from 2 GPa in the initial condition up to 3.5 GPa in case of combined N{sub 2}-C implantation. Projected range of the implanted elements is up to 20 nm with the implantation energy 20 keV that was obtained with XPS depth profiling.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Low-damage high-throughput grazing-angle sputter deposition on graphene

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

36 MATERIALS SCIENCE↗

Rarefaction windows in a high-power impulse magnetron sputtering plasma

The velocity distribution function of the sputtered particles in the direction parallel to the planar magnetron cathode is studied by spatially- and time-resolved laser-induced fluorescence spectroscopy in a short-duration (20 μs) high-power impulse magnetron sputtering discharge. The experimental evidence for the neutral and ionized sputtered particles to have a constant (saturated) velocity at the end of the plasma on-time is demonstrated. The velocity component parallel to the target surface reaches the values of about 5 km/s for Ti atoms and ions, which is higher that the values typically measured in the direct current sputtering discharges before. The results point out on the presence of a strong gas rarefaction significantly reducing the sputtered particles energy dissipation during a certain time interval at the end of the plasma pulse, referred to as “rarefaction window” in this work. The obtained results agree with and essentially clarify the dynamics of HiPIMS discharge studied during the plasma off-time previously in the work: N. Britun, Appl. Phys. Lett. 99, 131504 (2011)

36 MATERIALS SCIENCE↗

Sputtering of Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN by electrosprayed nanodroplets

This article presents a characterization of the damage caused by energetic beams of electrosprayed nanodroplets striking the surfaces of single-crystal semiconductors including Si, SiC, InAs, InP, Ge, GaAs, GaSb, and GaN. The sputtering yield (number of atoms ejected per projectile's molecule), sputtering rate, and surface roughness are measured as functions of the beam acceleration potential. The maximum values of the sputtering yields range between 1.9 and 2.2 for the technological important but difficult to etch SiC and GaN respectively, and 4.5 for Ge. The maximum sputtering rates for the non-optimized beam flux conditions used in our experiments vary between 409 nm/min for SiC and 2381 nm/min for GaSb. The maximum sputtering rate for GaN is 630 nm/min. Surface roughness increases modestly with acceleration voltage, staying within 2 nm and 20 nm for all beamlet acceleration potentials and materials except Si. At intermediate acceleration potentials, the surface of Si is formed by craters orders of magnitude larger than the projectiles, yielding surface roughness in excess of 60 nm. The effect of projectile dose is studied in the case of Si. This parameter is correlated with the formation of the large craters typical of Si, which suggests that the accumulation of damage following consecutive impacts plays an important role in the interaction between beamlet and target.

36 MATERIALS SCIENCE↗

In situ Crystallization of RF sputtered ITO thin films: A comparison with annealed samples

Tin doped Indium Oxide (ITO) is a wide band gap semiconductor with high conductivity and transparency in the visible region of the solar spectrum. One of the most popular and exploited applications of ITO is the realization of the transparent conductive layers needed for the electrodes of light sensitive devices, such as photovoltaic cells. The thermal energy for the crystallization of ITO films is very low (150°C). The crystallization can be achieved by the continuous energetic bombardment of the ions in the sputtering chamber without annealing or substrate heating. The accumulated energy will ensure the thermal energy necessary for the crystallization. With the help of sufficiently high sputtering power and sufficient duration, crystallized ITO films can be produced without annealing. In this report, a comparison of the conductivity and transparency of ITO films under two crystallization conditions ((1) crystallization of the sputtered films by annealing; (2) in situ crystallization of the films by providing high sputtering power and long sputtering duration) will be presented.

36 MATERIALS SCIENCE↗

Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Direct comparative study on the energy level alignments in unoccupied/occupied states of organic semiconductor/electrode interface by constructing in-situ photoemission spectroscopy and Ar gas cluster ion beam sputtering integrated analysis system

Through the installation of electron gun and photon detector, an in-situ photoemission and damage-free sputtering integrated analysis system is completely constructed. Therefore, this system enables to accurately characterize the energy level alignments including unoccupied/occupied molecular orbital (LUMO/HOMO) levels at interface region of organic semiconductor/electrode according to depth position. Based on Ultraviolet Photoemission Spectroscopy (UPS), Inverse Photoemission Spectroscopy (IPES), and reflective electron energy loss spectroscopy, the occupied/unoccupied state of in-situ deposited Tris[4-(carbazol-9-yl)phenyl]amine (TCTA) organic semiconductors on Au (E{sub LUMO}: 2.51 eV and E{sub HOMO}: 1.35 eV) and Ti (E{sub LUMO}: 2.19 eV and E{sub HOMO}: 1.69 eV) electrodes are investigated, and the variation of energy level alignments according to work function of electrode (Au: 4.81 eV and Ti: 4.19 eV) is clearly verified. Subsequently, under the same analysis condition, the unoccupied/occupied states at bulk region of TCTA/Au structures are characterized using different Ar gas cluster ion beam (Ar GCIB) and Ar ion sputtering processes, respectively. While the Ar ion sputtering process critically distorts both occupied and unoccupied states in UPS/IPES spectra, the Ar GCIB sputtering process does not give rise to damage on them. Therefore, we clearly confirm that the in-situ photoemission spectroscopy in combination with Ar GCIB sputtering allows of investigating accurate energy level alignments at bulk/interface region as well as surface region of organic semiconductor/electrode structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Molecular dynamics analysis of metal surface sputtering due to bombardment of high energy particles

Dependence of sputtering yield of Cu (100) and Ni (100) metal surface by bombardment of 200 Ar ions at various energies and angles of projections is investigated in this paper. The sputtering yield has been calculated by performing molecular dynamics simulation and the same is compared with experiments and theoretical predictions wherever possible. Additionally the kinetic energy, velocity and scattering angle distribution for sputtered and incident atoms are also observed. The results obtained from the present molecular dynamics simulations are found to be in good agreement with experimental data and theoretical estimates. It is observed that the sputtering yield increases as the energy of the bombarding ion increases. Furthermore as the incidence angle increases, the sputtering yield increases until a specific angle and then decreases as normal incidence is approached.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of ambient combinations of argon, oxygen, and hydrogen on the properties of DC magnetron sputtered indium tin oxide films

Sputtering has been well-developed industrially with singular ambient gases including neutral argon (Ar), oxygen (O{sub 2}), hydrogen (H{sub 2}) and nitrogen (N{sub 2}) to enhance the electrical and optical performances of indium tin oxide (ITO) films. Recent preliminary investigation into the use of combined ambient gases such as an Ar+O{sub 2}+H{sub 2} ambient mixture, which was suitable for producing high-quality (low sheet resistance and high optical transmittance) of ITO films. To build on this promising preliminary work and develop deeper insight into the effect of ambient atmospheres on ITO film growth, this study provides a more detailed investigation of the effects of ambient combinations of Ar, O{sub 2}, H{sub 2} on sputtered ITO films. Thin films of ITO were deposited on glass substrates by DC magnetron sputtering using three different ambient combinations: Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}. The structural, electrical and optical properties of the three ambient sputtered ITO films were systematically characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectroscopy, four probe electrical conductivity and optical spectroscopy. The XRD and Raman studies confirmed the cubic indium oxide structure, which is polycrystalline at room temperature for all the samples. AFM shows the minimum surface roughness of 2.7 nm for Ar+O{sub 2}+H{sub 2} sputtered thin film material. The thickness of the films was determined by the cross sectional SEM analysis and its thickness was varied from 920 to 817 nm. The columnar growth of ITO films was also discussed here. The electrical and optical measurements of Ar+O{sub 2}+H{sub 2} ambient combinations shows a decreased sheet resistance (5.06 ohm/□) and increased optical transmittance (69%) than other samples. The refractive index and packing density of the films were projected using optical transmission spectrum. From the observed results the Ar+O{sub 2}+H{sub 2} ambient is a good choice to enhance the total optoelectronic properties of the ITO films. The improved electrical and optical properties of ITO films with respect to the Ar+O{sub 2}+H{sub 2} ambient sample were discussed in detail. In addition, the physical properties were also discussed with the influence of this ambient combination with respect to Ar, Ar+O{sub 2} and Ar+O{sub 2}+H{sub 2}.

36 MATERIALS SCIENCE↗

Conversion efficiency improvement of inverted CH{sub 3}NH{sub 3}PbI{sub 3} perovskite solar cells with room temperature sputtered ZnO by adding the C{sub 60} interlayer

We have demonstrated the performance of inverted CH{sub 3}NH{sub 3}PbI{sub 3} perovskite-based solar cells (SCs) with a room temperature (RT) sputtered ZnO electron transport layer by adding fullerene (C{sub 60}) interlayer. ZnO exhibits a better matched conduction band level with perovskite and Al work function and around energy offset of 2.2 eV between highest occupied molecular orbital level of CH{sub 3}NH{sub 3}PbI{sub 3} perovskite and valance band level of ZnO. However, the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite layer will be damaged during direct RT sputtering deposition of ZnO. Therefore, the C{sub 60} interlayer having matched conduction band level with ZnO and CH{sub 3}NH{sub 3}PbI{sub 3} perovskite added between the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite and RT sputtered ZnO layers for protection prevents sputtering damages on the CH{sub 3}NH{sub 3}PbI{sub 3} perovskite layer. The short-circuit current density (J{sub SC}, 19.41 mA/cm{sup 2}) and open circuit voltage (V{sub OC}, 0.91 V) of the SCs with glass/ITO/poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS)/perovskite/C{sub 60}/RT sputtered ZnO/Al structure is higher than the J{sub SC} (16.23 mA/cm{sup 2}) and V{sub OC} (0.90 V) of the reference SC with glass/ITO/PEDOT:PSS/perovskite/C{sub 60}/bathocuproine (BCP)/Al structure. Although the SCs with the former structure has a lower fill factor (FF%) than the SCs with the latter structure, its conversion efficiency η% (10.93%) is higher than that (10.6%) of the latter.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chemical sputtering by H{sub 2}{sup +} and H{sub 3}{sup +} ions during silicon deposition

We investigated chemical sputtering of silicon films by H{sub y}{sup +} ions (with y being 2 and 3) in an asymmetric VHF Plasma Enhanced Chemical Vapor Deposition (PECVD) discharge in detail. In experiments with discharges created with pure H{sub 2} inlet flows, we observed that more Si was etched from the powered than from the grounded electrode, and this resulted in a net deposition on the grounded electrode. With experimental input data from a power density series of discharges with pure H{sub 2} inlet flows, we were able to model this process with a chemical sputtering mechanism. The obtained chemical sputtering yields were (0.3–0.4) ± 0.1 Si atom per bombarding H{sub y}{sup +} ion at the grounded electrode and at the powered electrode the yield ranged from (0.4 to 0.65) ± 0.1. Subsequently, we investigated the role of chemical sputtering during PECVD deposition with a series of silane fractions S{sub F} (S{sub F}(%) = [SiH{sub 4}]/[H{sub 2}]*100) ranging from S{sub F} = 0% to 20%. We experimentally observed that the SiH{sub y}{sup +} flux is not proportional to S{sub F} but decreasing from S{sub F} = 3.4% to 20%. This counterintuitive SiH{sub y}{sup +} flux trend was partly explained by an increasing chemical sputtering rate with decreasing S{sub F} and partly by the reaction between H{sub 3}{sup +} and SiH{sub 4} that forms SiH{sub 3}{sup +}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

SPUTTERING AND MOLECULAR SYNTHESIS INDUCED BY 100 keV PROTONS IN CONDENSED CO{sub 2} AND RELEVANCE TO THE OUTER SOLAR SYSTEM

We present results on sputtering and radiation chemistry of CO{sub 2} films induced by 100 keV H{sup +} at 25 and 50 K. Using a quartz crystal microbalance, we measure a sputtering yield (SY) between {approx}10 and 20 CO{sub 2} equivalent per ion at 25 K. The yield at 50 K is similar to that at 25 K at low fluences, but increases to {approx}2400 by mid-10{sup 14} H{sup +} cm{sup -2} and declines at higher fluence. Irradiation to 1 Multiplication-Sign 10{sup 15} H{sup +} cm{sup -2} depletes {approx}85%-90% of the initial film mass at 50 K, compared to 3% at 25 K. In both cases, mass spectrometry shows that CO is the dominant constituent in the sputtered flux, followed by O{sub 2}, O, and CO{sub 2}. Using infrared spectroscopy, we monitor the depletion of CO{sub 2} and the accumulation of CO and O{sub 2} and minor species as O{sub 3} and CO{sub 3}. We determine G(-CO{sub 2}) = 2.6 {+-} 0.3, the number of CO{sub 2} destroyed per 100 eV at 25 K. A significant fraction of the radiolyzed CO and O{sub 2} are retained in the film at 25 K; only those near the surface are removed during irradiation, contributing to a smaller SY. At 50 K, CO and O{sub 2} are unstable along the 'hot' ion track and are expelled possibly from the entire depth of the film. Our results, and the lack of detection of CO in the exospheres around Rhea and Dione, show that the CO{sub 2} does not originate from sputtering, since otherwise the exosphere would be dominated by CO, the main molecule in the sputtered flux. We suggest that the exospheric CO{sub 2} is thermally released from an endogenic source.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

New oxygen radical source using selective sputtering of oxygen atoms for high rate deposition of TiO{sub 2} films

We have developed a new oxygen radical source based on the reactive sputtering phenomena of a titanium target for high rate deposition of TiO{sub 2} films. In this oxygen radical source, oxygen radicals are mainly produced by two mechanisms: selective sputter-emission of oxygen atoms from the target surface covered with a titanium oxide layer, and production of high-density oxygen plasma in the space near the magnetron-sputtering cathode. Compared with molecular oxygen ions, the amount of atomic oxygen radicals increased significantly with an increase in discharge current so that atomic oxygen radicals were mainly produced by this radical source. It should be noted that oxygen atoms were selectively sputtered from the target surface, and titanium atoms sputter-emitted from the target cathode were negligibly small. The amount of oxygen radicals supplied from this radical source increased linearly with increasing discharge current, and oxygen radicals of 1 Multiplication-Sign 10{sup 15} atoms/s/cm{sup 2} were supplied to the substrate surface at a discharge current of 1.2 A. We conclude that our newly developed oxygen radical source can be a good tool to achieve high rate deposition and to control the structure of TiO{sub 2} films for many industrial design applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant increase in film hardness and reduced elastic modulus with increasing V{sub s} for all techniques. The harder films were produced by MFMS with hardness as high as 25 GPa. Low friction coefficients, between 0.05 and 0.06, were recorded for all films. Furthermore, CN{sub x} films produced by MFMS and DCMS at V{sub s} = 100 and 120 V presented a high wear resistance with wear coefficients of k ≤ 2.3 × 10{sup −5} mm{sup 3}/Nm. While all CN{sub x} films exhibit low friction, wear depends strongly on the structural and mechanical characteristics of the films. The MFMS mode is best suited for the production of hard CN{sub x} films, although high compressive stresses challenge the application on steel substrates. Films grown in HiPIMS mode provide adequate adhesion due to low residual stress values, at the expense of lower film hardness. Thus, a relatively wide mechanical property envelope is presented for CN{sub x} films, which is relevant for the optimization of CN{sub x} film properties intended to be applied as low friction and wear resistant coatings.

36 MATERIALS SCIENCE↗

Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

Sputtering yields and surface chemical compositions of tin-doped indium oxide (or indium tin oxide, ITO) by CH{sup +}, CH{sub 3}{sup +}, and inert-gas ion (He{sup +}, Ne{sup +}, and Ar{sup +}) incidence have been obtained experimentally with the use of a mass-selected ion beam system and in-situ x-ray photoelectron spectroscopy. It has been found that etching of ITO is chemically enhanced by energetic incidence of hydrocarbon (CH{sub x}{sup +}) ions. At high incident energy incidence, it appears that carbon of incident ions predominantly reduce indium (In) of ITO and the ITO sputtering yields by CH{sup +} and CH{sub 3}{sup +} ions are found to be essentially equal. At lower incident energy (less than 500 eV or so), however, a hydrogen effect on ITO reduction is more pronounced and the ITO surface is more reduced by CH{sub 3}{sup +} ions than CH{sup +} ions. Although the surface is covered more with metallic In by low-energy incident CH{sub 3}{sup +} ions than CH{sup +} ions and metallic In is in general less resistant against physical sputtering than its oxide, the ITO sputtering yield by incident CH{sub 3}{sup +} ions is found to be lower than that by incident CH{sup +} ions in this energy range. A postulation to account for the relation between the observed sputtering yield and reduction of the ITO surface is also presented. The results presented here offer a better understanding of elementary surface reactions observed in reactive ion etching processes of ITO by hydrocarbon plasmas.

36 MATERIALS SCIENCE↗

Anorthite sputtering by H + and Ar q+ (q = 1-9) at solar wind velocities

Here, we report sputtering measurements of anorthite-like material, taken to be representative of soils found in the lunar highlands, impacted by singly and multicharged ions representative of the solar wind. The ions investigated include protons, as well as singly and multicharged Ar ions (as proxies for the nonreactive heavy solar wind constituents), in the charge state range +1 to +9, at fixed solar wind-relevant impact velocities of 165 and 310 km/s (0.25 keV/amu and 0.5 keV/amu). A quartz microbalance approach (QCM) for determination of total sputtering yields was used. The goal of the measurements was to determine the sputtering contribution of the heavy, multicharged minority solar wind constituents in comparison to that due to the dominant H + fraction. The QCM results show a yield increase of a factor of about 80 for Ar + versus H + sputtering and an enhancement by a factor of 1.67 between Ar 9+ and Ar + , which is a clear indication of a potential sputtering effect.

36 MATERIALS SCIENCE↗

Nanoscale imaging of hydrogen and sodium in alteration layers of corroded glass using ToF-SIMS: Is an auxiliary sputtering ion beam necessary?

The hydrogen (H)/sodium (Na) interface is of great interest in glass corrosion research. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is one of the few techniques that can provide nanoscale H and Na imaging simultaneously. However, the optimized condition for ToF-SIMS imaging of H in glass is still unclear. In H depth profiling using ToF-SIMS, H background control is a key, in which an analysis ion beam and a sputtering ion beam work together in an interlaced mode to minimize it. Therefore, it is of great interest to determine if an auxiliary sputtering ion beam is also necessary to control H background in ToF-SIMS imaging of H. In this study, a Bi+ primary ion beam with different auxiliary sputtering beams (Cs+, O2+ and Arn+) were compared on a corroded International Simple Glass (ISG). It was surprising that the H/Na interface could be directly imaged using positive ion imaging without any auxiliary sputtering ion beam under a vacuum of 2-3 × 10-8 mbar. The H+ background was about 5% atomic percent on the pristine ISG glass, which was significantly lower than the H concentration in the alteration layer (~15%). Moreover, positive ion imaging could show distributions of other interesting species simultaneously, providing more comprehensive information of the glass corrosion. The H+ background could be reduced with an auxiliary O2+ sputtering ion beam; however, significant loss of signal intensities was observed. In addition, a higher H background in ToF-SIMS imaging than that in the depth profiling was observed.

Zhang, Jiandong↗