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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Calibration For On-Machine Inspections

Permanent calibration setup on numerically-controlled machine tool enables fast and reliable calibration of automated probes for inspection of workpieces while still mounted on machine. Setup includes one or more artifacts, dimensions and locations known precisely and stored in memory of computer controlling machine. Before probes used to inspect newly machined part, used to check artifacts. Probe measurements compared with values in memory to determine whether probe readings need adjustment.

Haymaker, Carlton L., Jr.↗
NASA NTRS1990

Vertical bloch line memory

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, solid-state, block-access, VLSI memory which offers the potential of 1Gbit/sq cm real storage density, gigabit per second data rates, and sub-millisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBL's are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture, functional elements, and supercomputer simulation results which are used to assist the design process. The current design architecture uses three metal layers, two ion implantation steps for modulating the thickness of the magnetic layer, one ion implantation step for assisting propagation in the major line track, one NiFe soft magnetic layer, one CoPt hard magnetic layer, and one reflective Cr layer for facilitating magneto-optic observation of magnetic structure. Data are stored in a series of elongated magnetic domains, called stripes, which serve as storage sites for arrays of VBL pairs. The ends of these stripes are placed near conductors which serve as VBL read/write gates. A major line track is present to provide a source and propagation path for magnetic bubbles. Writing and reading, respectively, are achieved by converting magnetic bubbles to VBL's and vice versa. The output function is effected by stretching a magnetic bubble and detecting it magnetoresistively. Experimental results from the past design cycle created four design goals for the current design cycle. First, the bias field ranges for the stripes and the major line needed to be matched. Second, the magnetic field barrier between the stripe and the read/write gates needed to be reduced. Third, current conductor routing needed to be improved to reduce occurrences of open-circuiting, short-circuiting, and eddy-current shielding. Fourth, a modified Co-alloy was needed with an increased coercivity and controlled magnetization to allow VBL stabilization to occur without affecting stripe stability.

Katti, R.↗
NASA NTRS1988

Memory protection

Accidental overwriting of files or of memory regions belonging to other programs, browsing of personal files by superusers, Trojan horses, and viruses are examples of breakdowns in workstations and personal computers that would be significantly reduced by memory protection. Memory protection is the capability of an operating system and supporting hardware to delimit segments of memory, to control whether segments can be read from or written into, and to confine accesses of a program to its segments alone. The absence of memory protection in many operating systems today is the result of a bias toward a narrow definition of performance as maximum instruction-execution rate. A broader definition, including the time to get the job done, makes clear that cost of recovery from memory interference errors reduces expected performance. The mechanisms of memory protection are well understood, powerful, efficient, and elegant. They add to performance in the broad sense without reducing instruction execution rate.

Denning, Peter J.↗
NASA NTRS1991

Integrated Vertical Bloch Line (VBL) memory

Vertical Bloch Line (VBL) Memory is a recently conceived, integrated, solid state, block access, VLSI memory which offers the potential of 1 Gbit/sq cm areal storage density, data rates of hundreds of megabits/sec, and submillisecond average access time simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBLs are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of BVL pairs are used to store binary information. At present, efforts are being directed at developing a single chip memory using 25 Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. The current design architecture, functional elements, and supercomputer simulation results are described which are used to assist the design process.

Katti, R. R.↗
NASA NTRS2009

Systems and methods for detecting a failure event in a field programmable gate array

An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.

Ng, Tak-Kwong↗
NASA NTRS1970

Research on variable threshold transistor storage systems

A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.

Wegener, H. A. R.↗
NASA NTRS1982

Optical Memory Stores 10 12sup. Bits

Optical Mass Memory has separate recorder (write) and reproducer (read) modules. Data are recorded on fiches and stored in a carrousel. Fische is retrieved from carrousel by transporter in under 10 seconds. Input to optical memory is standard TV camera. TV monitor at memory output displays stored video images when they are retrieved from fisches. Input to the optical memory can also be taken from pseudorandom sequence generator.

Source record↗
NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗
NASA NTRS2014

Field Programmable Gate Array Apparatus, Method, and Computer Program

An apparatus is provided that includes a plurality of modules, a plurality of memory banks, and a multiplexor. Each module includes at least one agent that interfaces between a module and a memory bank. Each memory bank includes an arbiter that interfaces between the at least one agent of each module and the memory bank. The multiplexor is configured to assign data paths between the at least one agent of each module and a corresponding arbiter of each memory bank based on the assigned data path. The at least one agent of each module is configured to read data from the corresponding arbiter of the memory bank or write modified data to the corresponding arbiter of the memory bank.

Morfopoulos, Arin C.↗
NASA NTRS1997

Out-of-Core Streamline Visualization on Large Unstructured Meshes

It's advantageous for computational scientists to have the capability to perform interactive visualization on their desktop workstations. For data on large unstructured meshes, this capability is not generally available. In particular, particle tracing on unstructured grids can result in a high percentage of non-contiguous memory accesses and therefore may perform very poorly with virtual memory paging schemes. The alternative of visualizing a lower resolution of the data degrades the original high-resolution calculations. This paper presents an out-of-core approach for interactive streamline construction on large unstructured tetrahedral meshes containing millions of elements. The out-of-core algorithm uses an octree to partition and restructure the raw data into subsets stored into disk files for fast data retrieval. A memory management policy tailored to the streamline calculations is used such that during the streamline construction only a very small amount of data are brought into the main memory on demand. By carefully scheduling computation and data fetching, the overhead of reading data from the disk is significantly reduced and good memory performance results. This out-of-core algorithm makes possible interactive streamline visualization of large unstructured-grid data sets on a single mid-range workstation with relatively low main-memory capacity: 5-20 megabytes. Our test results also show that this approach is much more efficient than relying on virtual memory and operating system's paging algorithms.

Ueng, Shyh-Kuang↗
NASA NTRSDate not supplied

NOR Flash Memory Scrubbing Application for Boot File Preservation of NASA’s Descent and Landing Computer (DLC)

Progress on NASA’s Safe and Precise Landing Integrated Capabilities Evolution (SPLICE)project continues, specifically with this development of the Descent and Landing Computer(DLC). One of the DLC’s primary contributions as a SPLICE technology is its implementationof algorithms and operation of sensors to autonomously guide a spacecraft in performing moreprecise and safer landings on celestial bodies such as the Moon and Mars. The second iterationof the DLC is known as the Engineering Test Unit (ETU) and one of its desired functionalitiesis the ability to preserve the fidelity of the system’s boot file through the use of memoryscrubbing. The ETU has two primary boards, one for housing a Multi-Processor System ona Chip (MPSoC) and the other for housing a Xilinx Kintex Ultrascale FPGA3. To emulate amemory scrubbing function implemented on the ETU’s FPGA board, the design and testingof a software application was performed on a Xilinx KCU105 FPGA evaluation board. Thememory scrubbing application had to meet certain key criteria such as (1) properly utilize withthe flash memory’s Serial Peripheral Interface (SPI) to read, write, and erase flash memoryproperly, (2) be able to detect arbitrarily large or small amounts of bit-errors, (3) be able tocorrect all detected errors, and (4) perform memory scrubbing indefinitely and autonomously.A prototype implementation was constructed and tested, demonstrating successful detectionand correction of bit errors in multiple configurations. In the form of burst errors or singularbit flips, and in amounts of errors ranging from one to fifteen (per 256 Bytes), the applicationwas successful in preserving memory fidelity.

Radiation tolerant↗
NASA NTRSDate not supplied

Performance Optimization Methods for a Memory-Bound, Unstructured-Grid CFD Application on Massively Parallel GPU Platforms

Computational performance of the FUN3D unstructured-grid computational fluid dynamics (CFD) application on massively parallel GPU environments is memory-bound and highly dependent upon efficient reads from and atomic updates to the irregular cell-, edge-, and node-based data structures. In this talk, we present recent efforts into optimizing select performance-critical kernels on NVIDIA Tesla V100 and A100 GPUs and AMD CDNA MI100 GPUs. A novel use of L2 cache residency controls and asynchronous loads into on-chip shared memory are explored on the A100 GPU for the sparse iterative solver, which is dominated by mixed-precision, sparse matrix vector multiplication. Demonstrations show that these methods improve global memory bandwidth utilization by 13.5% on the A100 GPU. Several techniques are also presented that use registers and/or shared memory to facilitate array transposition and aggregation which combine to reduce the frequency and increase the cache efficiency of floating-point atomic updates to the irregular data structures. These methods are demonstrated to improve the kernel throughput by nearly 500% on select kernels on the AMD MI100 over atomic updates directly to global memory. Overall, both V100 and A100 GPUs outperformed the MI100 GPU on kernels dominated by double-precision atomic updates; however, the techniques demonstrated here reduced the performance gap and improved the MI100 performance.

GPU CPU unstructured CFD memory↗
NASA NTRS1981

A design approach to real-time formatting of high speed multispectral image data

A design approach to formatting multispectral image data in real time at very high data rates is presented for future onboard processing applications. The approach employs a microprocessor-based alternating buffer memory configuration whose formatting function is completely programmable. Data are read from an output buffer in the desired format by applying the proper sequence of addresses to the buffer via a lookup table memory. Sensor data can be processed using this approach at rates limited by the buffer memory access time and the buffer switching process delay time. This design offers flexible high speed data processing and benefits from continuing increases in the performance of digital memories.

Meredith, B. D.↗
NASA NTRS1991

Error latency measurements in symbolic architectures

Error latency, the time that elapses between the occurrence of an error and its detection, has a significant effect on reliability. In computer systems, failure rates can be elevated during a burst of system activity due to increased detection of latent errors. A hybrid monitoring environment is developed to measure the error latency distribution of errors occurring in main memory. The objective of this study is to develop a methodology for gauging the dependability of individual data categories within a real-time application. The hybrid monitoring technique is novel in that it selects and categorizes a specific subset of the available blocks of memory to monitor. The precise times of reads and writes are collected, so no actual faults need be injected. Unlike previous monitoring studies that rely on a periodic sampling approach or on statistical approximation, this new approach permits continuous monitoring of referencing activity and precise measurement of error latency.

Young, L. T.↗
NASA NTRS1994

Optically Addressable, Ferroelectric Memory With NDRO

For readout, memory cells addressed via on-chip semiconductor lasers. Proposed thin-film ferroelectric memory device features nonvolatile storage, optically addressable, nondestructive readout (NDRO) with fast access, and low vulnerability to damage by ionizing radiation. Polarization switched during recording and erasure, but not during readout. As result, readout would not destroy contents of memory, and operating life in specific "read-intensive" applications increased up to estimated 10 to the 16th power cycles.

Thakoor, Sarita↗
NASA NTRS1990

A Byzantine resilient processor with an encoded fault-tolerant shared memory

The memory requirements for ultra-reliable computers are expected to increase due to future increases in mission functionality and operating-system requirements. This increase will have a negative effect on the reliability and cost of the system. Increased memory size will also reduce the ability to reintegrate a channel after a transient fault, since the time required to reintegrate a channel in a conventional fault-tolerant processor is dominated by memory realignment time. A Byzantine Resilient Fault-Tolerant Processor with Fault-Tolerant Shared Memory (FTP/FTSM) is presented as a solution to these problems. The FTSM uses an encoded memory system, which reduces the memory requirement by one-half compared to a conventional quad-FTP design. This increases the reliability and decreases the cost of the system. The realignment problem is also addressed by the FTSM. Because any single error is corrected upon a read from the FTSM, a faulty channel's corrupted memory does not need realignment before reintegration of the faulty channel. A combination of correct-on-access and background scrubbing is proposed to prevent the accumulation of transient errors in the memory. With a hardware-implemented scrubber, the scrubbing cycle time, and therefore the memory fault latency, can be upper-bounded at a small value. This technique increases the reliability of the memory system and facilitates validation of its reliability model.

Butler, Bryan↗
NASA NTRS1988

Subroutines For Image Processing

Image Processing Library computer program, IPLIB, is collection of subroutines facilitating use of COMTAL image-processing system driven by HP 1000 computer. Functions include addition or subtraction of two images with or without scaling, display of color or monochrome images, digitization of image from television camera, display of test pattern, manipulation of bits, and clearing of screen. Provides capability to read or write points, lines, and pixels from image; read or write at location of cursor; and read or write array of integers into COMTAL memory. Written in FORTRAN 77.

Faulcon, Nettie D.↗