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We present radiation effects test results and analysis produced by NASA JSC in 2021 for candidate electronic components and devices. Devices tested include integrated circuits, MOSFETs, DC-DC converters, and various commercial solutions.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.
Electrical conductivity and electron spin resonance experiments in study of radiation effects on silicon
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
Radiation effects thresholds of electronic equipment and structural materials - metals, polymers, ceramics, semiconductors, and electric components
A potential limitation to human activity on the lunar surface or in deep space is the exposure of the crew to unacceptably high levels of penetrating space radiations. The radiations of most concerns for such missions are high-energy protons emitted during solar flares, and galactic cosmic rays which are high-energy ions ranging from protons to iron. The development of materials for effective shielding from energetic space radiations will clearly require a greater understanding of the underlying mechanisms of radiation-induced damage in bulk materials. This can be accomplished in part by the detailed spectroscopic characterization of bulk materials that were exposed to simulated space radiations. An experimental data base thus created can then be used in conjunction with existing radiation transport codes in the design and fabrication of effective radiation shielding materials. Electron Paramagnetic Resonance Spectroscopy was proven very useful in elucidating radiation effects in polymers (high performance polymers are often an important components of structural composites).
Jupiter's electron and proton radiation belts were analyzed, with particular reference to the effect of its five inner satellites, located within its magnetosphere. The characteristics of trapped electrons and protons with a magnetic moment of 50 MeV/gauss, considered typical at Jupiter, were calculated. The mean absorption time before impact was calculated for particles located at the radial distance of each of the satellites. A characteristic diffusion time near each satellite was calculated, assuming violation of the third invariant due to magnetic fluctuations associated with fluctuations in the solar wind. This diffusion time was found to be long compared with the absorption lifetimes at Europa and Amalthea.
Jupiter's electron and proton radiation belts are analyzed, with particular reference to the sweeping effect of its five inner satellites, located deep within its magnetosphere. The characteristics of trapped electrons and protons with a magnetic moment of 50 MeV/G, considered typical at Jupiter, are calculated. The assumption is then made that a particle would be removed from the radiation belt if, in its normal motion, it would happen to impact a satellite. The mean absorption time before impact is calculated for particles located at the radial distance of each of the satellites. This average lifetime is found to be of the order of a few days. A characteristic diffusion time near each satellite was calculated, assuming violation of the third invariant due to magnetic fluctuations associated with fluctuations in the solar wind.
Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.
This presentation includes an introduction to the space radiation environment, the effects on electronics, the environment in action, flight projects, mission needs, and radiation hardness assurance (RHA).
We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.
The equations giving the response of a slightly ionized plasma with monatomic components to sinusoidal perturbations have been formulated. Included in the model equations were the electron Hall effect, electron thermal diffusion, radiation, and electron-atom rate processes. Plasma conditions were limited to those where viscous effects, the induced magnetic field, ion slip, and atom-atom inelastic processes can be neglected. Presented are results of numerical calculations for MHD generators with a working fluid of potassium seeded argon.
Characteristics of high energy electron radiation and temperature and effect on N/P silicon solar cells
Electron radiation damaged Si, investigating p type defect concentration effect on isochronal temperature in annealing by fractionation experiment
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.
We present the results of single events effects (SEE) testing and analysis investigating the effects of radiation on electronics.
Radiation effects on silicon studied by electron spin resonance techniques
The radiation effects on typical science instruments according to the Jupiter trapped radiation design restraint model are described, and specific aspects of the model where an improved understanding would be beneficial are suggested. The spacecraft design used is the TOPS 12L configuration. Ionization and displacement damage are considered, and damage criteria are placed on the most sensitive components. Possible protective measures are mentioned: selecting components as radiation resistant as possible, using a difference in desired and undesired signal shapes for electronic shielding, orienting and locating the component on the spacecraft for better shielding, and adding passive shields to protect specific components. Available options are listed in decreasing order of attractiveness: attempt to lower the design restraints without compromising the success of the missions, trade off experiment objectives for increased reliability, alter the trajectory, and remove sensitive instruments from the payload.