Large Area InGaN/GaN MQW p-i-n Avalanche Photodiode Cherenkov Radiation Detectors
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Solid state device uses sapphire windows and avoids coatings which absorb ultraviolet radiation and ultimately alter detector geometry. Ultimate solution for ultraviolet response is geometry with maximum peripheral area and horizontal field structure to draw out photon induced current carriers.
Integrator compensates for background noise in Fourier spectrometer. Compensation is automatic.
The Johns Hopkins University is currently developing an instrument to fly aboard NASA's Space Shuttle as a Spartan payload in the late 1980s. This Spartan free flyer will obtain spatially resolved spectra of faint extended emission line objects in the wavelength range 750-1150 A at about 2-A resolution. The use of two-dimensional photon counting detectors will give simultaneous coverage of the 400 A spectral range and the 9 arc-minute spatial resolution along the spectrometer slit. The progress towards the flight detector is reported here with preliminary results from a laboratory breadboard detector, and a comparison with the one-dimensional detector developed for the Hopkins Ultraviolet Telescope. A hardware digital centroiding algorithm has been successfully implemented. The system is ultimately capable of 15-micron resolution in two dimensions at the image plane and can handle continuous counting rates of up to 8000 counts/s.
Synchronous sampling circuit increases signal-to-noise ratio of measurements of chopped signal of known phase and frequency in presence of low-frequency or dc background noise. Used with linear array of photoelectric sensors for locating edge of metal plate. Multiplexing circuit cycles through 16 light-emitting-diode/photodiode pairs, under computer control. Synchronized with multiplexer so edge detector makes one background-subtracted signal measurement per emitter/detector pair in turn.
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We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.
A model of the optical properties of Al(x)Ga(1-x)As(y)Sb(1-y) and In(x)Ga(1-x)As(y)Sb(1-y) is presented, including the refractive, extinction, absorption and reflection coefficients in terms of the optical dielectric function of the materials. Energy levels and model parameters for each binary compound are interpolated to obtain the needed ternaries and quaternaries for various compositions. Bowing parameters are considered in the interpolation scheme to take into account the deviation of the calculated ternary and quaternary values from experimental data due to lattice disorders. The inclusion of temperature effects is currently being considered.
A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.
A centroid computation system is disclosed. The system has an imager array, a switching network, computation elements, and a divider circuit. The imager array has columns and rows of pixels. The switching network is adapted to receive pixel signals from the image array. The plurality of computation elements operates to compute inner products for at least x and y centroids. The plurality of computation elements has only passive elements to provide inner products of pixel signals the switching network. The divider circuit is adapted to receive the inner products and compute the x and y centroids.
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