Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Memory device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Report for the ASCR Workshop on the Management and Storage of Scientific Data

The purpose of this workshop is to identify priority research directions in the area of data management for high-performance and scientific computing above and beyond HPC’s traditional "the parallel file system is the data-management system" model. Supporting the breadth of the DOE mission, including the explosion of AI uses and the growing needs of experimental and observational science, motivates revisiting our assumptions about data management. There are many facets of this topic to explore including: (1) Interfaces for accessing data that resides on traditional persistent storage as well as memory devices; (2) Storage-system architecture design that supports scientific workflows on varied hierarchical storage and networking devices; (3) Devising metadata management infrastructure to support FAIR principles (Findability, Accessibility, Interoperability, and Reusability); (4) Capturing provenance information about scientific data; (5) Utilizing AI to learn I/O patterns of emerging workloads for efficient data management; (6) Providing data management support for AI and complex workflows; and (7) Understanding the overlap between traditional storage systems and I/O (SSIO) efforts and data management. While the program committee has identified these topics as important areas for discussion, we welcome position papers from the community that propose additional topics of interest for discussion at the workshop. The workshop agenda will include breakout sessions for discussing these and selected topic areas to inform priority research directions for data management for high-performance and scientific computing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Quantum criticality and topology in non-equilibrium systems

A key goal of condensed matter physics research is to identify new phases of matter, and to understand the universal features of the phase transitions between them. In the past decade, physicists have uncovered a wealth of new phases with interesting surface properties, exemplified by the theoretical prediction and subsequent experimental discovery of topological insulators and superconductors. Traditional condensed matter systems are usually in a thermal equilibrium state and typically at very low temperature. Very recently, experimental advances have sparked interest in the non-equilibrium setting. Non-equilibrium systems can host new phases and phenomena with no equilibrium counterpart, and could also enable robust ways to build quantum memory devices to store and manipulate quantum information in a coherent manner. These phases and phenomena are inherently “dynamical”: they are described not by changes in the arrangement or structure of the constituent particles, but instead marked by sharp distinctions in how the particles move and exchange energy or quantum information. The discovery of robust non-equilibrium phases raises many fundamental questions: Can we develop a systematic theory of states of matter and of dynamical transitions between such states? How can such states be realized and probed experimentally? The main goal of this project was to explore the emergence of topological phases and quantum criticality (two cornerstones of modern condensed matter physics in equilibrium) in such non-equilibrium quantum systems. Specific goals included (1) using tensor networks to efficiently represent non-equilibrium states of matter and their phase transitions; (2) studying and designing new probes for periodically driven systems; and (3) developing analytic and numerical tools to analyze non-equilibrium topological phase transitions. Advances in these directions were achieved using novel techniques appropriate to study the non-equilibrium dynamics in many-body quantum systems combining strong interactions and randomness. Taken together, these results provide a new conceptual framework for understanding the emergence of quantum critical and topological properties in quantum systems far from thermal equilibrium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Properties of Electronic Materials

This final technical report summarizes the research conducted under DOE Grant DE-SC0002623, "Properties of Electronic Materials," led by Principal Investigator Shengbai Zhang at Rensselaer Polytechnic Institute. Over the 16-year period, the project employed first-principles computational methods to investigate the structural, electronic, and dynamic properties of a wide range of electronic materials, with applications in energy technologies, optoelectronics, and data storage. Key areas included topological insulators, phase-change materials, graphene and two-dimensional systems, perovskites for photovoltaics, defect engineering in semiconductors, kagome lattices, and ultrafast carrier dynamics. The research resulted in 115 peer-reviewed publications, advancing fundamental understanding of material behaviors at the atomic scale and contributing to innovations in renewable energy, memory devices, and quantum materials. Findings have implications for improving energy efficiency, developing lead-free solar cells, and enabling high-speed data processing. The work has trained numerous graduate students and postdocs, fostering the next generation of computational materials scientists. The original goals were to develop theoretical models and computational tools to predict and optimize electronic properties of materials for energy applications. All objectives were accomplished, with no major departures from planned methodologies. Challenges in computational scaling were addressed through access to high-performance computing resources.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) (λ = 13.5 nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1 nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic–organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials and methods for the preparation of nanocomposites

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Graph Neural Network-based Tracking as a Service

Recent studies have shown promising results for track finding in dense environments using Graph Neural Network (GNN)-based algorithms. However, GNN-based track finding is computationally slow on CPUs, necessitating the use of coprocessors to accelerate the inference time. Additionally, the large input graph size demands a large device memory for efficient computation, a requirement not met by all computing facilities used for particle physics experiments, particularly those lacking advanced GPUs. Furthermore, deploying the GNN-based track-finding algorithm in a production environment requires the installation of all dependent software packages, exclusively utilized by this algorithm. These computing challenges must be addressed for the successful implementation of GNN-based track-finding algorithm into production settings. In response, we introduce a ``GNN-based tracking as a service'' approach, incorporating a custom backend within the NVIDIA Triton inference server to facilitate GNN-based tracking. This paper presents the performance of this approach using the Perlmutter supercomputer at NERSC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Using predictions of outcomes of cache memory access requests for controlling whether a request generator sends memory access requests to a memory in parallel with cache memory access requests

An electronic device handles memory access requests for data in a memory. The electronic device includes a memory controller for the memory, a last-level cache memory, a request generator, and a predictor. The predictor determines a likelihood that a cache memory access request for data at a given address will hit in the last-level cache memory. Based on the likelihood, the predictor determines: whether a memory access request is to be sent by the request generator to the memory controller for the data in parallel with the cache memory access request being resolved in the last-level cache memory, and, when the memory access request is to be sent, a type of memory access request that is to be sent. When the memory access request is to be sent, the predictor causes the request generator to send a memory request of the type to the memory controller.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Shape-memory polymer foam device for treating aneurysms

A system for treating an aneurysm in a blood vessel or vein, wherein the aneurysm has a dome, an interior, and a neck. The system includes a shape memory polymer foam in the interior of the aneurysm between the dome and the neck. The shape memory polymer foam has pores that include a first multiplicity of pores having a first pore size and a second multiplicity of pores having a second pore size. The second pore size is larger than said first pore size. The first multiplicity of pores are located in the neck of the aneurysm. The second multiplicity of pores are located in the dome of the aneurysm.

Ortega, Jason M.↗
DOE OSTI2023

Quantum optical memory for entanglement distribution

Optical photons are powerful carriers of quantum information, which can be delivered in free space by satellites or in fibers on the ground over long distances. Entanglement of quantum states over long distances can empower quantum computing, quantum communications, and quantum sensing. Quantum optical memories are devices designed to store quantum information in the form of stationary excitations, such as atomic coherence, and are capable of coherently mapping these excitations to flying qubits. Quantum memories can effectively store and manipulate quantum states, making them indispensable elements in future long-distance quantum networks. Over the past two decades, quantum optical memories with high fidelities, high efficiencies, long storage times, and promising multiplexing capabilities have been developed, especially at the single-photon level. In this review, we introduce the working principles of commonly used quantum memory protocols and summarize the recent advances in quantum memory demonstrations. We also offer a vision for future quantum optical memory devices that may enable entanglement distribution over long distances.

Lei, Yisheng↗
DOE OSTI2020

Distributed gather/scatter operations across a network of memory nodes

Devices, methods, and systems for distributed gather and scatter operations in a network of memory nodes. A responding memory node includes a memory; a communications interface having circuitry configured to communicate with at least one other memory node; and a controller. The controller includes circuitry configured to receive a request message from a requesting node via the communications interface. The request message indicates a gather or scatter operation, and instructs the responding node to retrieve data elements from a source memory data structure and store the data elements to a destination memory data structure. The controller further includes circuitry configured to transmit a response message to the requesting node via the communications interface. The response message indicates that the data elements have been stored into the destination memory data structure.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Bit error protection in cache memories

A computing device having a cache memory that is configured in a write-back mode is described. A cache controller in the cache memory acquires, from a record of bit errors that are present in each of a plurality of portions of the cache memory, a number of bit errors in a portion of the cache memory. The cache controller detects a coherency state of data stored in the portion of the cache memory. Based on the coherency state and the number of bit errors, the cache controller selects an error protection from among a plurality of error protections. The cache controller uses the selected error protection to protect the data stored in the portion of the cache memory from errors.

Kalamatianos, John↗
DOE OSTI2021

Quality of service for input/output memory management unit

A data processing system includes a memory, a group of input/output (I/O) devices, an input/output memory management unit (IOMMU). The IOMMU is connected to the memory and adapted to allocate a hardware resource from among a group of hardware resources to receive an address translation request for a memory access from an I/O device. The IOMMU detects address translation requests from the plurality of I/O devices. The IOMMU reorders the address translation requests such that an order of dispatching an address translation request is based on a policy associated with the I/O device that is requesting the memory access. The IOMMU selectively allocates a hardware resource to the input/output device, based on the policy that is associated with the I/O device in response to the reordering.

Basu, Arkaprava↗
DOE OSTI2025

Dispatch Manager for NEML2 Constitutive Model Calculations Embedded in MOOSE

This report describes the extended capabilities of the NEML2 constitutive modeling library, including a flexible and efficient work dispatching system designed to leverage both CPU and GPU resources. This enhancement addresses one of the primary computational challenges in large-scale simulations: the ability to distribute and execute batches of material model evaluations across heterogeneous computing devices. The new dispatch system introduces a modular set of dispatcher and scheduler classes that coordinate the flow of data and execution between devices. The dispatcher is responsible for efficiently packaging work, managing device-specific memory operations, and synchronizing results. This modularity allows for extensibility, making it straightforward to integrate additional computing backends in the future. From an implementation standpoint, the dispatcher system interfaces seamlessly with NEML2's existing models. They handle device-aware tensor operations, optimize memory transfers, and support asynchronous execution when applicable. This design ensures that batches of material points can be evaluated concurrently, substantially improving throughput compared to previous single-device or serial implementations. These improvements not only enhance the raw performance of NEML2 but also improve its usability in multiscale and high-fidelity simulations, where the simultaneous evaluation of large material point batches is critical. Benchmarks included in the report demonstrate the system’s scalability, highlighting its effectiveness when leveraging modern GPU architectures.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Memory hierarchy using page-based compression

A system includes a device coupleable to a first memory. The device includes a second memory to cache data from the first memory. The second memory is to store a set of compressed pages of the first memory and a set of page descriptors. Each compressed page includes a set of compressed data blocks. Each page descriptor represents a corresponding page and includes a set of location identifiers that identify the locations of the compressed data blocks of the corresponding page in the second memory. The device further includes compression logic to compress data blocks of a page to be stored to the second memory and decompression logic to decompress compressed data blocks of a page accessed from the second memory.

Loh, Gabriel H.↗
DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗
DOE OSTI2024

Dynamic Testing of a Commercial FRAM Device Under Gamma Ray Dose and Neutron Beam

Here, this work presents dose rate and neutron testing on a ferroelectric random-access memory (FRAM) device in dynamic operation during radiation pulses. Radiation failure modes are shown to be unique. Dose rate failure is shown to be based primarily on integrated dose in the radiation pulse and terminates the FRAM operation and can alter up to 8 bytes of data in storage. Neutron failures are attributed to a shifting of data like a clocking error.

Harris, Nathan↗