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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Simulation of solidification in a Bridgman cell

Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quality infrared detector and junction device materials. However, crystal imperfections and interface shapes still must be controlled through modification of the temperature and concentration gradients created during solidification. The objective of this investigation was to study the temperature fields generated by various cell and heatpipe configurations and operating conditions. Continuum's numerical model of the temperature, species concentrations, and velocity fields was used to describe the thermal characteristics of Bridgman cell operation.

Dakhoul, Y. M.↗
NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1986

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1993

Semiconductor cooling apparatus

Gas derived graphite fibers generated by the decomposition of an organic gas are joined with a suitable binder. This produces a high thermal conductivity composite material which passively conducts heat from a source, such as a semiconductor, to a heat sink. The fibers may be intercalated. The intercalate can be halogen or halide salt, alkaline metal, or any other species which contributes to the electrical conductivity improvement of the graphite fiber. The fibers are bundled and joined with a suitable binder to form a high thermal conductivity composite material device. The heat transfer device may also be made of intercalated highly oriented pyrolytic graphite and machined, rather than made of fibers.

Banks, Bruce A.↗
NASA NTRS2005

Nanotechnology Presentation Agenda

Working at the atomic, molecular and supra-molecular levels, in the length scale of approximately 1 - 100 nm range, in order to understand, create and use materials, devices and systems with fundamentally new properties and functions because of their small structure. NNI definition encourages new contributions that were not possible.before. Novel phenomena, properties and functions at nanoscale,which are non scalable outside of the nm domain. The ability to measure / control / manipulate matter at the nanoscale in order to change those properties and functions. Integration along length scales, and fields of application.

Source record↗
NASA NTRS1997

A Chemical and Structural Study of the AlN-Si Interface

The growth of low defect density heteroepitaxial AlN has great implications for optoelectronic and high power devices since the AlN can be used either as device material or as a buffer layer for the overgrowth of other group-III nitrides. In this work, the results of transmission electron microscopy (TEM) involving both high resolution imaging and electron energy loss spectroscopy (EELS) of AlN/Si layers is reported and the relationship between Si-Al-N interactions and the misorientation of AlN nuclei is elucidated.

epitaxial optoelectronic silicon gallium nitride↗
NASA NTRS2017

Thermionic Energy Conversion in the Twenty-First Century: Advances and Opportunities for Space and Terrestrial Applications

Thermionic energy conversion (TEC) is the direct conversion of heat into electricity by the mechanism of thermionic emission, the spontaneous ejection of hot electrons from a surface. Although the physical mechanism has been known for over a century, it has yet to be consistently realized in a manner practical for large-scale deployment. This perspective article provides an assessment of the potential of TEC systems for space and terrestrial applications in the twenty-first century, overviewing recent advances in the field and identifying key research challenges. Recent developments as well as persisting research needs in materials, device design, fundamental understanding, and testing and validation are discussed.

Thermionic energy conversion↗
NASA NTRSDate not supplied

Assessment of Cryogenic Analog Electronics for Lunar Environment

Assessment of Analog Electronics for Lunar Power Hibernation Non-nuclear robotic spacecraft on the Moon may not reliably operate past the first lunar day due to the subsequent long lunar night with an extreme low temperature range of 50K-100K. To address this concern, the NASA Glenn Research Center is developing a lunar power hibernation protocol that could enable spacecraft to passively survive the lunar night without any additional heating source and then reactivate at lunar dawn. Low cost lunar robotic missions could extend their mission lifetime from a single lunar cycle to potentially many months, thus greatly extending science data gathering and return on investment for commercial missions. This approach centers on evidence that lithium-ion battery cells can recover to full operation after being subjected to cryogenic temperatures. Exploiting this battery capability requires that all spacecraft electronics, including power system and avionics, passively tolerate the extreme cold without degradation. Key elements in the power system will also need to be capable of actively operating in the extreme cold to perform the functions required to restore the system to full operation after solar power returns at lunar dawn. This presentation provides an assessment of extreme-cold tolerance and operational capability of analog electronics where choices in semiconductor material, device type, and circuit fabrication technology has a dramatic impact on circuit behavior and reliability at low temperatures.

Lunar↗
NASA NTRSDate not supplied

High Sensitive and Low Power Nanosensors for Space and Terrestrial Applications

Nanotechnology offers the ability to work at the molecular level, atom by atom, to create large structures with fundamentally new molecular organization. It is essentially concerned with materials, devices, and systems whose structures and components exhibit novel and significantly improved physical, chemical and biological properties, phenomena, and process control due to their nanoscale size. A nanosensor technology has been developed at NASA Ames using nanostructure, single walled carbon nanotubes (SWNTs). The nanosensors have achieved low detection limit of chemicals in the concentration range of ppm to ppb. Due to large surface area, low surface energy barrier and high thermal and mechanical stability, nanostructured chemical sensors offer higher sensitivity, lower power consumption and a more robust solution than most state-of-the-art systems making them attractive for space and terrestrial applications. An example of a sensor module, the first space flown nano device, will be introduced in this presentation. Such sensors have drawn attention from space community for global weather monitoring, space exploration, life search in the universe, and launch pad fuel leak detection and in-flight cabin air and life support system monitoring, and engine operation monitoring. Additionally, the wireless capability of such sensors can be leveraged to network mobile and fixed-base detection and warning systems for civilian population centers, military bases and battlefields, as well as other high-value or high-risk assets and areas in industry.

Jing Li↗
DOE OSTI2021

Sulfurization Engineering of One–Step Low–Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS 2 and WS 2 have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS 2 and WS 2 at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO 2 /Si substrates is achieved. Following this, MoS 2 and WS 2 memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10 3 –10 5 ) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. Furthermore, the demonstration of large-scale MoS 2 and WS 2 memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Simulating Superconducting Devices in Novel Materials Using the G4CMP Simulation Toolkit

Understanding the kinematics of phonons and charge propagation in superconducting devices is crucial for conducting low-threshold dark matter searches and minimizing correlated errors in superconducting qubits. For nearly a decade, the Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, has been limited to simulating charge and phonon transport in silicon and germanium materials. In this work, we have expanded the capabilities of G4CMP to include novel substrate materials such as sapphire (Al2O3), Gallium Arsenide (GaAs), Lithium Fluoride (LiF), Calcium Tungstate (CaWO4), and Calcium Fluoride (CaF2). We demonstrate the use of this toolkit in generating phonon transport properties for these materials and compare the results with experimentally determined values where available. Additionally, we explore the performance of superconducting devices utilizing these materials.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Systems, devices, and methods for contact measurement and modulation of material properties

Materials and devices are provided for the sensing and manipulation of biomechanical and physiochemical properties of tissues or tissue surfaces. Examples of use include soft tissues such as skin or adipose tissues or more dense tissues such as muscle or heart or dense tissues such as bone. The materials and devices provide for in vivo measurements of biomechanical properties at the tissue surface, e.g. near surface regions of the epidermis or dermis or underlying structures. The devices can be non-invasive and/or non-destructive to the material and, especially for the biomaterials, can be biocompatible and/or biodegradable. The materials and devices can use ultrathin, stretchable networks of mechanical actuators and sensors constructed with nanoribbons of piezoelectric materials.

Dagdeviren, Canan↗
NASA NTRS2023

Toward Accurate Thermal Modeling of Phase Change Material Based Photonic Devices

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide-based phase change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid-state structural phases. Although significant efforts have been devoted to accurate simulation of PCM-based devices, in this paper, we highlight three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid-phase PCMs. We further investigated the important topic of switching energy scaling in PCM devices, which also helps explain why the three above-mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics. Our findings offer insight to facilitate accurate modeling of PCM-based photonic devices and can inform the development of more efficient reconfigurable optics.

Phase change materials↗
NASA NTRS2012

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Park, Yeonjoon↗